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Lillian Pentecost

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cond-mat.mes-hall cond-mat.mtrl-sci Emerging Technologies Hardware Architecture Machine Learning Performance

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preprint2022arXiv

NVMExplorer: A Framework for Cross-Stack Comparisons of Embedded Non-Volatile Memories

Repeated off-chip memory accesses to DRAM drive up operating power for data-intensive applications, and SRAM technology scaling and leakage power limits the efficiency of embedded memories. Future on-chip storage will need higher density and energy efficiency, and the actively expanding field of emerging, embeddable non-volatile memory (eNVM) technologies is providing many potential candidates to satisfy this need. Each technology proposal presents distinct trade-offs in terms of density, read, write, and reliability characteristics, and we present a comprehensive framework for navigating and quantifying these design trade-offs alongside realistic system constraints and application-level impacts. This work evaluates eNVM-based storage for a range of application and system contexts including machine learning on the edge, graph analytics, and general purpose cache hierarchy, in addition to describing a freely available (http://nvmexplorer.seas.harvard.edu/) set of tools for application experts, system designers, and device experts to better understand, compare, and quantify the next generation of embedded memory solutions.

preprint2021arXiv

Logic Compatible High-Performance Ferroelectric Transistor Memory

Silicon ferroelectric field-effect transistors (FeFETs) with low-k interfacial layer (IL) between ferroelectric gate stack and silicon channel suffers from high write voltage, limited write endurance and large read-after-write latency due to early IL breakdown and charge trapping and detrapping at the interface. We demonstrate low voltage, high speed memory operation with high write endurance using an IL-free back-end-of-line (BEOL) compatible FeFET. We fabricate IL-free FeFETs with 28nm channel length and 126nm width under a thermal budget <400C by integrating 5nm thick Hf0.5Zr0.5O2 gate stack with amorphous Indium Tungsten Oxide (IWO) semiconductor channel. We report 1.2V memory window and read current window of 10^5 for program and erase, write latency of 20ns with +/-2V write pulses, read-after-write latency <200ns, write endurance cycles exceeding 5x10^10 and 2-bit/cell programming capability. Array-level analysis establishes IL-free BEOL FeFET as a promising candidate for logic-compatible high-performance on-chip buffer memory and multi-bit weight cell for compute-in-memory accelerators.

preprint2020arXiv

MLPerf Training Benchmark

Machine learning (ML) needs industry-standard performance benchmarks to support design and competitive evaluation of the many emerging software and hardware solutions for ML. But ML training presents three unique benchmarking challenges absent from other domains: optimizations that improve training throughput can increase the time to solution, training is stochastic and time to solution exhibits high variance, and software and hardware systems are so diverse that fair benchmarking with the same binary, code, and even hyperparameters is difficult. We therefore present MLPerf, an ML benchmark that overcomes these challenges. Our analysis quantitatively evaluates MLPerf's efficacy at driving performance and scalability improvements across two rounds of results from multiple vendors.