Researcher profile

Lihua Wang

Lihua Wang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 15 - UnverifiedVerification L1Unclaimed author
3works
0followers
5topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2022arXiv

Intelligent detect for substation insulator defects based on CenterMask

With the development of intelligent operation and maintenance of substations, the daily inspection of substations needs to process massive video and image data. This puts forward higher requirements on the processing speed and accuracy of defect detection. Based on the end-to-end learning paradigm, this paper proposes an intelligent detection method for substation insulator defects based on CenterMask. First, the backbone network VoVNet is improved according to the residual connection and eSE module, which effectively solves the problems of deep network saturation and gradient information loss. On this basis, an insulator mask generation method based on a spatial attentiondirected mechanism is proposed. Insulators with complex image backgrounds are accurately segmented. Then, three strategies of pixel-wise regression prediction, multi-scale features and centerness are introduced. The anchor-free single-stage target detector accurately locates the defect points of insulators. Finally, an example analysis is carried out with the substation inspection image of a power supply company in a certain area to verify the effectiveness and robustness of the proposed method.

preprint2020arXiv

Gapless and Massive 1D Singlet Dispersion Channel in Infinite Spin-1/2 Ladders ---Infinite Quasi-1D Entanglement Perturbation Theory for Excitation

We solve for the elementary excitation in infinite quasi-1D quantum lattices by extending the recently developed infinite quasi-1D entanglement perturbation theory. The wave function of an excited state is variationally determined by optimizing superposition of cluster operation, each of which is composed of simultaneous on-site operation inside a block of lattice sites, on the ground state in a form of plane wave. The excitation energy with respect to the wave number gives the spectra for an elementary excitation. Our method is artificial broadening free and is adaptive for various quasi-particle pictures. Using the triplet spectrum, the application to $\infty$-by-$N$ antiferromagnetic spin-$\frac{1}{2}$ ladders for $N=2, 4, 6, 8$, and $10$ confirms a previous report that there is a quantum dimensional transition, namely, the lattice transits from quasi-1D to 2D at a finite critical value $N_c=10$. The massless triplet dispersion at $\left( π, π\right)$ sees a vanishing gap. Our results detect the anomaly at $\left(π,0\right)$ in the triplet spectrum, agreeing well with the inelastic neutron scattering measurement of a macroscopic sample. Surprisingly, our results also reveal a gapless and massive 1D singlet dispersion channel that is much lower than the triplet excitation. We note, however, the dimensional transition is determined by the massless triplet dispersion.

preprint2019arXiv

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is key to the practical applications of TIs. Here, we show that wafer-sized Bi2Te3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO2/Si substrates by magnetron cosputtering. The SiO2/Si substrates enable us to electrically tune (Bi1-xSbx)2Te3 and Cr-doped (Bi1-xSbx)2Te3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states, such as the quantum anomalous Hall effect (QAHE). This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.