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Bowei Zhang

Bowei Zhang contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

The Three Hundred: Cluster Dynamical States and Relaxation Time Scale

Using the galaxy clusters from The Three Hundred Project, we define a new parameter: $λ_{DS}$ to describe the dynamical state of clusters, which assumes a double-Gaussian distribution in logarithm scale for our mass-complete cluster sample at $z=0$ from the dark-matter-only (DMO) run. Therefore, the threshold for distinguishing relaxed and unrelaxed clusters is naturally determined by the crossing point of the double-Gaussian fitting which has a value of $λ_{DS} = 3.424$. By applying $λ_{DS}$ with the same parameters from the DMO run to the hydro-dynamically simulated clusters (Gadget-X run and GIZMO-SIMBA run), we investigate the effect of baryons on the cluster dynamical state. We find a weak baryon-model dependence for the $λ_{DS}$ parameter. Finally, we study the evolution of $λ_{DS}$ along with clusters mass accretion history. We notice an upper limit of halo mass change $\frac{ΔM_{200}}{M_{200}} \sim 0.12$ that don't alter the cluster dynamical state, i.e. from relaxed to unrelaxed. We define relaxation period (from the most relaxed state to disturb and relaxed again) which reflects how long the dynamical state of a cluster restores its relaxation state, and propose a correlation between this relaxation period and the strength of halo mass change $\frac{ΔM_{200}}{M_{200}}$. With the proposed fitting to such correlation, we verify the relaxation period can be estimated from $\frac{ΔM_{200}}{M_{200}}$ (including multi mass change peaks) with considerably small error.

preprint2019arXiv

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is key to the practical applications of TIs. Here, we show that wafer-sized Bi2Te3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO2/Si substrates by magnetron cosputtering. The SiO2/Si substrates enable us to electrically tune (Bi1-xSbx)2Te3 and Cr-doped (Bi1-xSbx)2Te3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states, such as the quantum anomalous Hall effect (QAHE). This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.