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Bowei Zhang

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cond-mat.mtrl-sci astro-ph.CO astro-ph.GA Computational Geometry physics.app-ph

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preprint2021arXiv

The Three Hundred: Cluster Dynamical States and Relaxation Time Scale

Using the galaxy clusters from The Three Hundred Project, we define a new parameter: $λ_{DS}$ to describe the dynamical state of clusters, which assumes a double-Gaussian distribution in logarithm scale for our mass-complete cluster sample at $z=0$ from the dark-matter-only (DMO) run. Therefore, the threshold for distinguishing relaxed and unrelaxed clusters is naturally determined by the crossing point of the double-Gaussian fitting which has a value of $λ_{DS} = 3.424$. By applying $λ_{DS}$ with the same parameters from the DMO run to the hydro-dynamically simulated clusters (Gadget-X run and GIZMO-SIMBA run), we investigate the effect of baryons on the cluster dynamical state. We find a weak baryon-model dependence for the $λ_{DS}$ parameter. Finally, we study the evolution of $λ_{DS}$ along with clusters mass accretion history. We notice an upper limit of halo mass change $\frac{ΔM_{200}}{M_{200}} \sim 0.12$ that don't alter the cluster dynamical state, i.e. from relaxed to unrelaxed. We define relaxation period (from the most relaxed state to disturb and relaxed again) which reflects how long the dynamical state of a cluster restores its relaxation state, and propose a correlation between this relaxation period and the strength of halo mass change $\frac{ΔM_{200}}{M_{200}}$. With the proposed fitting to such correlation, we verify the relaxation period can be estimated from $\frac{ΔM_{200}}{M_{200}}$ (including multi mass change peaks) with considerably small error.

preprint2019arXiv

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is key to the practical applications of TIs. Here, we show that wafer-sized Bi2Te3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO2/Si substrates by magnetron cosputtering. The SiO2/Si substrates enable us to electrically tune (Bi1-xSbx)2Te3 and Cr-doped (Bi1-xSbx)2Te3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states, such as the quantum anomalous Hall effect (QAHE). This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.

preprint2016arXiv

Large-area and high-quality 2D transition metal telluride

Atomically thin transitional metal ditellurides like WTe2 and MoTe2 have triggered tremendous research interests because of their intrinsic nontrivial band structure. They are also predicted to be 2D topological insulators and type-II Weyl semimetals. However, most of the studies on ditelluride atomic layers so far rely on the low-yield and time-consuming mechanical exfoliation method. Direct synthesis of large-scale monolayer ditellurides has not yet been achieved. Here, using the chemical vapor deposition (CVD) method, we demonstrate controlled synthesis of high-quality and atom-thin tellurides with lateral size over 300 μm. We found that the as-grown WTe2 maintains two different stacking sequences in the bilayer, where the atomic structure of the stacking boundary is revealed by scanning transmission electron microscope (STEM). The low-temperature transport measurements revealed a novel semimetal-to-insulator transition in WTe2 layers and an enhanced superconductivity in few-layer MoTe2. This work paves the way to the synthesis of atom-thin tellurides and also quantum spin Hall devices.

preprint2015arXiv

Linear Time Approximation Schemes for Geometric Maximum Coverage

We study approximation algorithms for the following geometric version of the maximum coverage problem: Let P be a set of n weighted points in the plane. We want to place m a * b rectangles such that the sum of the weights of the points in P covered by these rectangles is maximized.For any fixed > 0, we present efficient approximation schemes that can find (1-ε)-approximation to the optimal solution.In particular, for m = 1, our algorithm runs in linear time O(n log( 1/ε)), improving over the previous result. For m > 1, we present an algorithm that runs in O(n/εlog(1/ε)+m(1/ε)^(O(min(sqrt(m),1/ε))) time.