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Source author record

Lianfeng Zhao

Lianfeng Zhao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2014arXiv

Temperature dependent characteristics of GaSb p-channel MOSFETs with Si-implanted source and drain

GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si implanted source/drain are demonstrated. Thermal anneal conditions are optimized for the source/drain impurity activation. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two different temperature regions and the mechanisms underneath are proposed. Off-state drain current is generation current dominated in the low temperature regions and is diffusion current dominated in the high temperature regions.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Effects of ozone post deposition treatment on interfacial and electrical characteristics of atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates

Atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates were treated by in-situ ozone post deposition treatment (PDT). The effects of ozone PDT on the interfacial and electrical properties of Al2O3 and HfO2 gate dielectric films on GaSb substrates were investigated carefully. It is found that the dielectric quality and the interfacial properties of the Al2O3 and HfO2 films are improved by ozone PDT. After in-situ ozone PDT for 5 min, the Al2O3 and HfO2 films on GaSb substrates exhibit improved electrical and interfacial properties, such as reduced frequency dispersion, gate leakage current, border traps and interface traps. Interface trap density is reduced by ~24% for the Al2O3/GaSb stacks and ~27% for the HfO2/GaSb stacks. In-situ ozone PDT is proved to be a promising technique in improving the quality of high-k gate stacks on GaSb substrates.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Improved Interfacial and Electrical Properties of GaSb Metal Oxide Semiconductor Devices Passivated with Acidic (NH4)2S Solution

Surface passivation with acidic (NH4)2S solution is shown to be effective in improving the interfacial and electrical properties of HfO2/GaSb metal oxide semiconductor devices. Compared with control samples, those treated with acidic (NH4)2S solution showed great improvements in frequency dispersion, gate leakage current and interface trap density. These improvements were attributed to the acidic (NH4)2S solution enhancing passivation of the substrates, which was analyzed from the perspective of chemical mechanism and confirmed by X-ray photoelectron spectroscopy and high-resolution cross-sectional transmission electron microscopy.

0 citations0 reviewsNo code linkedOpen access