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Temperature dependent characteristics of GaSb p-channel MOSFETs with Si-implanted source and drain

GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si implanted source/drain are demonstrated. Thermal anneal conditions are optimized for the source/drain impurity activation. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two different temperature regions and the mechanisms underneath are proposed. Off-state drain current is generation current dominated in the low temperature regions and is diffusion current dominated in the high temperature regions.

preprint2014arXivOpen access
Lianfeng ZhaoZhen TanJing WangJun Xu
cond-mat.mtrl-sci
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Open access4 authors1 topic
Imported metadata coverageMissing code, dataset, citation and institution fields are tracked without dominating the paper.Details
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Lianfeng ZhaoZhen TanJing WangJun Xu

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