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Li-kun Shi

Li-kun Shi contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2023arXiv

Polariton-drag enabled quantum geometric photocurrents in high symmetry materials

Lowered symmetry enables access to a wide set of responses not typically accessible in high symmetry materials. Prime examples are time-reversal forbidden quantum geometric photocurrent responses (e.g., linear injection and circular shift photocurrents) that are thought to vanish in non-magnetic materials. Here we argue that polariton-drag processes enable to unblock such quantum geometric photocurrents even in non-magnetic and centrosymmetric materials. Strikingly, we uncover how a cooperative effect between finite q irradiation and the Fermi surface position leads to a polariton selective photoexcitation (PSP). PSP enables to directly address carriers within tight momentum resolved windows of the Fermi surface to yield giant enhancements of quantum geometric photocurrents. This selectivity enables to directly track momentum resolved quantum geometric quantities along the Fermi surface providing a new tool to interrogate the quantum geometry of high symmetry materials.

preprint2019arXiv

Gate-tunable flat bands in van der Waals patterned dielectric superlattices

Superlattice engineering provides the means to reshape the fabric felt by quasiparticles moving in a material. Here we argue that bandstructure engineering with superlattices can be pushed to the extreme limit by stacking gapped van der Waals (vdW) materials on patterned dielectric substrates. Specifically, we find that high quality vdW patterned dielectric superlattices (PDS) realize a series of robust flat bands that can be directly switched on and off by gate voltage in situ. In contrast to existing superlattice platforms, these flat bands are realized without the need for fine tuning. Instead, the bands become flat as the gate voltage increases in magnitude. The characteristics of PDS flatbands are highly tunable: the type of flatband (single non-degenerate or dirac-cone-like), localization length, and interaction energy are sensitive to the applied gate voltage. As a result, electron-electron interactions in the PDS flatbands can become stronger than both the bandwidth and disorder broadening, providing a setting for correlated behavior such as flatband ferromagnetism. We expect PDS flatbands can be experimentally realized in a range of readily available gapped vdW materials such as monolayer transition metal dichalcogenides, e.g. WSe2.