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Justin C. W. Song

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Published work

27 published item(s)

preprint2023arXiv

Polariton-drag enabled quantum geometric photocurrents in high symmetry materials

Lowered symmetry enables access to a wide set of responses not typically accessible in high symmetry materials. Prime examples are time-reversal forbidden quantum geometric photocurrent responses (e.g., linear injection and circular shift photocurrents) that are thought to vanish in non-magnetic materials. Here we argue that polariton-drag processes enable to unblock such quantum geometric photocurrents even in non-magnetic and centrosymmetric materials. Strikingly, we uncover how a cooperative effect between finite q irradiation and the Fermi surface position leads to a polariton selective photoexcitation (PSP). PSP enables to directly address carriers within tight momentum resolved windows of the Fermi surface to yield giant enhancements of quantum geometric photocurrents. This selectivity enables to directly track momentum resolved quantum geometric quantities along the Fermi surface providing a new tool to interrogate the quantum geometry of high symmetry materials.

preprint2023arXiv

Quantum plasmonic non-reciprocity in parity-violating magnets

The optical responses of metals are often dominated by plasmonic resonances - the collective oscillations of interacting electron liquids. Here we unveil a new class of plasmons - quantum metric plasmons (QMPs) - that arise in a wide range of parity violating magnetic metals. In these materials, a dipolar distribution of the quantum metric (a fundamental characteristic of Bloch wavefunctions) produces intrinsic non-reciprocal bulk plasmons. Strikingly, QMP non-reciprocity manifests even when the single-particle dispersion is symmetric: QMPs are sensitive to time-reversal and parity violations hidden in the Bloch wavefunction. In materials with asymmetric single-particle dispersions, quantum metric dipole induced non-reciprocity can continue to dominate at large frequencies. We anticipate that QMPs can be realized in a wide range of parity violating magnets, including twisted bilayer graphene heterostructures, where quantum geometric quantities can achieve large values.

preprint2022arXiv

Tunable and giant valley-selective Hall effect in gapped bilayer graphene

Berry curvature is analogous to magnetic field but in momentum space and is commonly present in materials with non-trivial quantum geometry. It endows Bloch electrons with transverse anomalous velocities to produce Hall-like currents even in the absence of a magnetic field. We report the direct observation of in situ tunable valley-selective Hall effect (VSHE), where inversion symmetry, and thus the geometric phase of electrons, is controllable by an out-of-plane electric field. We use high-quality bilayer graphene with an intrinsic and tunable bandgap, illuminated by circularly polarized mid-infrared light and confirm that the observed Hall voltage arises from an optically-induced valley population. Compared with molybdenum disulfide, we find orders of magnitude larger VSHE, attributed to the inverse scaling of the Berry curvature with bandgap. By monitoring the valley-selective Hall conductivity, we study Berry curvature's evolution with bandgap. This in situ manipulation of VSHE paves the way for topological and quantum geometric opto-electronic devices, such as more robust switches and detectors.

preprint2021arXiv

Strain-induced large injection current in twisted bilayer graphene

The electronic wavefunctions in moiré materials are highly sensitive to the details of the local atomic configuration enabling Bloch band geometry and topology to be controlled by stacking and strain. Here we predict that large injection currents (under circular polarized irradiation) can develop in strained twisted bilayer graphene (TBG) heterostructures with broken sublattice symmetry; such bulk photovoltaic currents flow even in the absence of a p-n junction and can be controlled by the helicity of incident light. As we argue, large injection current rates proceed from strong and highly peaked interband Berry curvature dipole distributions (arising from the texturing of Bloch wavefunctions in strained TBG heterostructures). Strikingly, we find that TBG injection current displays pronounced responses in the THz regime and can be tuned by chemical potential. These render injection currents a useful photocurrent probe of symmetry breaking in TBG heterostructures and make TBG a promising material for THz technology.

preprint2020arXiv

Hall diffusion anomaly and transverse Einstein relation

It is commonly believed that the current response of an electron fluid to a mechanical force (such as an electric field) or to a ``statistical force" (e.g., a gradient of chemical potential) are governed by a single linear transport coefficient - the electric conductivity. We argue that this is not the case in anomalous Hall materials. In particular, we find that transverse (Hall) currents manifest two distinct Hall responses governed by an unconventional {\it transverse} Einstein relation that captures an anomalous relation between the Hall conductivity and the Hall diffusion constant. We give examples of when the Hall diffusion anomaly is prominent, resulting in situations where the transverse diffusion process overwhelms the Hall conductivity and vice versa.

preprint2020arXiv

Multistable excitonic Stark effect

The optical Stark effect is a tell-tale signature of coherent light-matter interaction in excitonic systems, wherein an irradiating light beam tunes exciton transition frequencies. Here we show that, when excitons are placed in a nanophotonic cavity, the excitonic Stark effect can become highly nonlinear, exhibiting multi-valued and hysteretic Stark shifts that depend on the history of the irradiating light. This multistable Stark effect (MSE) arises from feedback between the cavity mode occupation and excitonic population, mediated by the Stark-induced mutual tuning of the cavity and excitonic resonances. Strikingly, the MSE manifests even for very dilute exciton concentrations and can yield discontinuous Stark shift jumps of order meV. We expect that the MSE can be realized in readily available transition metal dichalcogenide excitonic systems placed in planar photonic cavities, at modest pump intensities. This phenomenon can provide new means to engineer coupled states of light and matter that can persist even in the single exciton limit.

preprint2019arXiv

Gate-tunable flat bands in van der Waals patterned dielectric superlattices

Superlattice engineering provides the means to reshape the fabric felt by quasiparticles moving in a material. Here we argue that bandstructure engineering with superlattices can be pushed to the extreme limit by stacking gapped van der Waals (vdW) materials on patterned dielectric substrates. Specifically, we find that high quality vdW patterned dielectric superlattices (PDS) realize a series of robust flat bands that can be directly switched on and off by gate voltage in situ. In contrast to existing superlattice platforms, these flat bands are realized without the need for fine tuning. Instead, the bands become flat as the gate voltage increases in magnitude. The characteristics of PDS flatbands are highly tunable: the type of flatband (single non-degenerate or dirac-cone-like), localization length, and interaction energy are sensitive to the applied gate voltage. As a result, electron-electron interactions in the PDS flatbands can become stronger than both the bandwidth and disorder broadening, providing a setting for correlated behavior such as flatband ferromagnetism. We expect PDS flatbands can be experimentally realized in a range of readily available gapped vdW materials such as monolayer transition metal dichalcogenides, e.g. WSe2.

preprint2018arXiv

Intra-cell dynamics and cyclotron motion without magnetic field

Intra-cell motion endows rich non-trivial phenomena to a wide variety of quantum materials. The most prominent example is a transverse current in the absence of a magnetic field (i.e. the anomalous Hall effect). Here we show that, in addition to a dc Hall effect, anomalous Hall materials possess circulating currents and cyclotron motion without magnetic field. These are generated from the intricate wavefunction dynamics within the unit cell, and correspond to interband transitions (coherences) in much the same way that cyclotron resonances arise from inter-Landau level transitions in magneto-optics. Curiously, anomalous cyclotron motion exhibits an intrinsic decay in time (even in pristine materials) displaying a characteristic power law decay. This reveals an intrinsic dephasing similar to that of inhomogeneous broadening of spinors. Circulating currents can manifest as the emission of circularly polarized light pulses in response to incident linearly polarized (pulsed) electric field, and provide a direct means of interrogating the intra-unit-cell dynamics of quantum materials.

preprint2016arXiv

Chiral plasmons without magnetic field

Plasmons, the collective oscillations of interacting electrons, possess emergent properties that dramatically alter the optical response of metals. We predict the existence of a new class of plasmons -- chiral Berry plasmons (CBPs) -- for a wide range of two-dimensional metallic systems including gapped Dirac materials. As we show, in these materials the interplay between Berry curvature and electron-electron interactions yields chiral plasmonic modes at zero magnetic field. The CBP modes are confined to system boundaries, even in the absence of topological edge states, with chirality manifested in split energy dispersions for oppositely directed plasmon waves. We unveil a rich CBP phenomenology and propose setups for realizing them, including in anomalous Hall metals and optically-pumped 2D Dirac materials. Realization of CBPs will offer a new paradigm for magnetic field-free, sub-wavelength optical non-reciprocity, in the mid IR-THz range, with tunable splittings as large as tens of THz, as well as sensitive all-optical diagnostics of topological bands.

preprint2016arXiv

Enhanced thermionic-dominated photoresponse in graphene Schottky junctions

Vertical heterostructures of van der Waals materials enable new pathways to tune charge and energy transport characteristics in nanoscale systems. We propose that graphene Schottky junctions can host a special kind of photoresponse which is characterized by strongly coupled heat and charge flows that run vertically out of the graphene plane. This regime can be accessed when vertical energy transport mediated by thermionic emission of hot carriers overwhelms electron-lattice cooling as well as lateral diffusive energy transport. As such, the power pumped into the system is efficiently extracted across the entire graphene active area via thermionic emission of hot carriers into a semiconductor material. Experimental signatures of this regime include a large and tunable internal responsivity ${\cal R}$ with a non-monotonic temperature dependence. In particular, ${\cal R}$ peaks at electronic temperatures on the order of the Schottky potential $ϕ$ and has a large upper limit ${\cal R} \le e/ϕ$ ($e/ϕ=10\,{\rm A/W}$ when $ϕ= 100\,{\rm meV}$). Our proposal opens up new approaches for engineering the photoresponse in optically-active graphene heterostructures.

preprint2016arXiv

Giant Hall photoconductivity in narrow-gapped Dirac materials

Carrier dynamics acquire a new character in the presence of Bloch-band Berry curvature, which naturally arises in gapped Dirac materials (GDMs). Here we argue that photoresponse in GDMs with small band gaps is dramatically enhanced by Berry curvature. This manifests in a giant and saturable Hall photoconductivity when illuminated by circularly polarized light. Unlike Hall motion arising from a Lorentz force in a magnetic field, which impedes longitudinal carrier motion, Hall photoconductivity arising from Berry curvature can boost longitudinal carrier transport. In GDMs, this results in a helicity-dependent photoresponse in the Hall regime, where photoconductivity is dominated by its Hall component. We find that the induced Hall conductivity per incident irradiance is enhanced by up to six orders of magnitude when moving from the visible regime (with corresponding band gaps) to the far infrared. These results suggest that narrow-gap GDMs are an ideal test-bed for the unique physics that arise in the presence of Berry curvature, and open a new avenue for infrared and terahertz optoelectronics.

preprint2016arXiv

Persistent Hall response in a quantum quench

Out-of-equilibrium systems can host phenomena that transcend the usual restrictions of equilibrium systems. Here we unveil how out-of-equilibrium states, prepared via a quantum quench, can exhibit a non-zero Hall-type response that persists at long times, and even when the instantaneous Hamiltonian is time reversal symmetric; both these features starkly contrast with equilibrium Hall currents. Interestingly, the persistent Hall effect arises from processes beyond those captured by linear response, and is a signature of the novel dynamics in out-of-equilibrium systems. We propose quenches in two-band Dirac systems as natural venues to realize persistent Hall currents, which exist when either mirror or time-reversal symmetry are broken (before or after the quench). Its long time persistence, as well as sensitivity to symmetry breaking, allow it to be used as a sensitive diagnostic of the complex out-equilibrium dynamics readily controlled and probed in cold-atomic optical lattice experiments.

preprint2015arXiv

Accessing phonon polaritons in hyperbolic crystals by ARPES

Recently studied hyperbolic materials host unique phonon-polariton (PP) modes. The ultra-short wavelengths of these modes, which can be much smaller than those of conventional exciton-polaritons, are of high interest for extreme sub-diffraction nanophotonics schemes. Polar hyperbolic materials such as hexagonal boron nitride can be used to realize strong long-range coupling between PP modes and extraneous charge degrees of freedom. The latter, in turn, can be used to control and probe PP modes. Of special interest is coupling between PP modes and plasmons in an adjacent graphene sheet, which opens the door to accessing PP modes by angle-resolved photoemission spectroscopy (ARPES). A rich structure in the graphene ARPES spectrum due to PP modes is predicted, providing a new probe of PP modes and their coupling to graphene plasmons.

preprint2015arXiv

Linear magnetoresistance in metals: guiding center diffusion in a smooth random potential

We predict that guiding center (GC) diffusion yields a linear and non-saturating (transverse) magnetoresistance in 3D metals. Our theory is semi-classical and applies in the regime where the transport time is much greater than the cyclotron period, and for weak disorder potentials which are slowly varying on a length scale much greater than the cyclotron radius. Under these conditions, orbits with small momenta along magnetic field $B$ are squeezed and dominate the transverse conductivity. When disorder potentials are stronger than the Debye frequency, linear magnetoresistance is predicted to survive up to room temperature and beyond. We argue that magnetoresistance from GC diffusion explains the recently observed giant linear magnetoresistance in 3D Dirac materials.

preprint2015arXiv

Shockley-Ramo theorem and long-range photocurrent response in gapless materials

Scanning photocurrent maps of gapless materials, such as graphene, often exhibit complex patterns of hot spots positioned far from current-collecting contacts. We develop a general framework that helps to explain the unusual features of the observed patterns, such as the directional effect and the global character of photoresponse. We show that such a response is captured by a simple Shockley-Ramo-type approach. We examine specific examples and show that the photoresponse patterns can serve as a powerful tool to extract information about symmetry breaking, inhomogeneity, chirality, and other local characteristics of the system.

preprint2015arXiv

Topological Bloch Bands in Graphene Superlattices

We outline an approach to endow a plain vanilla material with topological properties by creating topological bands in stacks of manifestly nontopological atomically thin materials. The approach is illustrated with a model system comprised of graphene stacked atop hexagonal-boron-nitride. In this case, the Berry curvature of the electron Bloch bands is highly sensitive to the stacking configuration. As a result, electron topology can be controlled by crystal axes alignment, granting a practical route to designer topological materials. Berry curvature manifests itself in transport via the valley Hall effect and long-range chargeless valley currents. The non-local electrical response mediated by such currents provides diagnostics for band topology.

preprint2014arXiv

Energy Flows in Graphene: Hot Carrier Dynamics and Cooling

Long lifetimes of hot carriers can lead to qualitatively new types of responses in materials. The magnitude and time scales for these responses reflect the mechanisms governing energy flows. We examine the microscopics of two processes which are key for energy transport, focusing on the unusual behavior arising due to graphene's unique combination of material properties. One is hot carrier generation in its photoexcitation dynamics, where hot carriers multiply through an Auger type carrier-carrier scattering cascade. The hot-carrier generation manifests itself through elevated electronic temperatures which can be accessed in a variety of ways, in particular optical conductivity measurements. Another process of high interest is electron-lattice cooling. We survey different cooling pathways and discuss the cooling bottleneck arising for the momentum-conserving electron-phonon scattering pathway. We show how this bottleneck can be relieved by higher-order collisions - supercollisions - and examine the variety of supercollision processes that can occur in graphene.

preprint2014arXiv

Topological Valley Currents in Gapped Dirac Materials

Gapped 2D Dirac materials, in which inversion symmetry is broken by a gap-opening perturbation, feature a unique valley transport regime. The system ground state hosts dissipationless persistent valley currents existing even when topologically protected edge modes are absent or when they are localized due to edge roughness. Topological valley currents in such materials are dominated by bulk currents produced by electronic states just beneath the gap rather than by edge modes. Dissipationless currents induced by an external bias are characterized by a quantized half-integer valley Hall conductivity. The under-gap currents dominate magnetization and the charge Hall effect in a light-induced valley-polarized state.

preprint2013arXiv

Ballistic Heat Transfer and Energy Waves in an Electron System

Materials in which heat and entropy can be transmitted by directed ballistic pulses can trigger new approaches to energy transduction in solids. We predict that a ballistic energy transfer mode, with heat propagation governed by a wave equation rather than a diffusion equation, can be realized for a thermal electron-hole plasma in graphene. The new behavior originates from rapid exchange of energy and momentum in particle collisions leading to energy propagation as a collective weakly-damped oscillation. Due to the electronic nature of this mode, the estimated propagation velocity can be ~10^3 times larger than that for previously studied phonon mechanisms. The energy mode is uncharged at charge neutrality, but becomes coupled to charge dynamics upon doping. This coupling can be used for all-electric excitation and detection of energy transport.

preprint2013arXiv

Coulomb Drag Mechanisms in Graphene

Recent measurements revealed an anomalous Coulomb drag in graphene, hinting at new physics at charge neutrality. The anomalous drag is explained by a new mechanism based on energy transport, which involves interlayer energy transfer, coupled to charge flow via lateral heat currents and thermopower. The old and new drag mechanisms are governed by distinct physical effects, resulting in starkly different behavior, in particular for drag magnitude and sign near charge neutrality. The new mechanism explains the giant enhancement of drag near charge neutrality, as well as its sign and anomalous sensitivity to magnetic field. Under realistic conditions, energy transport dominates in a wide temperature range, giving rise to a universal value of drag which is essentially independent of the electron-electron interaction strength.

preprint2013arXiv

Electron Interactions and Gap Opening in Graphene Superlattices

We develop a theory of interaction effects in graphene superlattices, where tunable superlattice periodicity can be used as a knob to control the gap at the Dirac point. Applied to graphene on hexa-boron-nitride (G/h-BN), our theory predicts substantial many-body enhancement of this gap. Tunable by the moire superlattice periodicity, a few orders of magnitude enhancement is reachable under optimal conditions. The Dirac point gap enhancement can be much larger than that of the minigaps opened by Bragg scattering at principal superlattice harmonics. This naturally explains the conundrum of large Dirac point gaps recently observed in G/h-BN heterostructures and their tunability by the G/h-BN twist angle.

preprint2013arXiv

Hall Drag and Magnetodrag in Graphene

Massless Dirac fermions in graphene at charge neutrality form a strongly interacting system in which both charged and neutral (energy) modes play an important role. These modes are essentially decoupled in the absence of a magnetic field, but become strongly coupled when a field is applied. We show that these ideas explain the recently observed giant magnetodrag, arising in classically weak fields when electron density is tuned near charge neutrality. We predict strong Hall drag in this regime, which is in stark departure from the weak coupling regime, where theory predicts the absence of Hall drag. Energy-driven magnetodrag and Hall drag arise in a wide temperature range and at weak magnetic fields, and feature an unusually strong dependence on field and carrier density.

preprint2012arXiv

Disorder-Assisted Electron-Phonon Scattering and Cooling Pathways in Graphene

We predict that graphene is a unique system where disorder-assisted scattering (supercollisions) dominates electron-lattice cooling over a wide range of temperatures, up to room temperature. This is so because for momentum-conserving electron-phonon scattering the energy transfer per collision is severely constrained due to a small Fermi surface size. The characteristic $T^3$ temperature dependence and power-law cooling dynamics provide clear experimental signatures of this new cooling mechanism. The cooling rate can be changed by orders of magnitude by varying the amount of disorder which offers means for a variety of new applications that rely on hot-carrier transport.

preprint2012arXiv

Energy-driven Drag at Charge Neutrality in Graphene

Coulomb coupling between proximal layers in graphene heterostructures results in efficient energy transfer between the layers. We predict that, in the presence of correlated density inhomogeneities in the layers, vertical energy transfer has a strong impact on lateral charge transport. In particular, for Coulomb drag it dominates over the conventional momentum drag near zero doping. The dependence on doping and temperature, which is different for the two drag mechanisms, can be used to separate these mechanisms in experiment. We predict distinct features such as a peak at zero doping and a multiple sign reversal, which provide diagnostics for this new drag mechanism.

preprint2012arXiv

Photo-excited Carrier Dynamics and Impact Excitation Cascade in Graphene

Photo-excitation in solids can trigger a cascade in which multiple particle-hole excitations are generated. We analyze the carrier multiplication cascade of impact excitation processes in graphene and show that the number of pair excitations has a strong dependence on doping, which makes carrier multiplication gate-tunable. We also predict that the number of excited pairs as well as the characteristic time of the cascade scale linearly with photo-excitation energy. These dependences, as well as sharply peaked angular distribution of pair excitations, provide clear experimental signatures of carrier multiplication.

preprint2011arXiv

Hot Carrier Transport and Photocurrent Response in Graphene

Strong electron-electron interactions in graphene are expected to result in multiple-excitation generation by the absorption of a single photon. We show that the impact of carrier multiplication on photocurrent response is enhanced by very inefficient electron cooling, resulting in an abundance of hot carriers. The hot-carrier-mediated energy transport dominates the photoresponse and manifests itself in quantum efficiencies that can exceed unity, as well as in a characteristic dependence of the photocurrent on gate voltages. The pattern of multiple photocurrent sign changes as a function of gate voltage provides a fingerprint of hot-carrier-dominated transport and carrier multiplication.

preprint2011arXiv

Hot Carrier-Assisted Intrinsic Photoresponse in Graphene

Graphene is a new material showing high promise in optoelectronics, photonics, and energy-harvesting applications. However, the underlying physical mechanism of optoelectronic response has not been established. Here, we report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse, provide strong evidence that non-local hot-carrier transport, rather than the photovoltaic effect, dominates the intrinsic photoresponse in graphene. This novel regime, which features a long-lived and spatially distributed hot carrier population, may open the doorway for optoelectronic technologies exploiting efficient energy transport at the nanoscale.