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Lewys Jones

Lewys Jones appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.ins-det

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Published work

8 published item(s)

preprint2022arXiv

Procedure for 3D atomic resolution reconstructions using atom-counting and a Bayesian genetic algorithm

We introduce a Bayesian genetic algorithm for reconstructing atomic models of nanoparticles from a single projection using Z-contrast imaging. The number of atoms in a projected atomic column obtained from annular dark field scanning transmission electron microscopy (ADF STEM) images serves as an input for the initial three-dimensional (3D) model. The novel algorithm minimizes the energy of the structure while utilizing a priori information about the finite precision of the atom-counting results and neighbor-mass relations. The results show excellent prospects for obtaining reliable reconstructions of beam-sensitive nanoparticles during dynamical processes from images acquired with sufficiently low incident electron doses.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Using Your Beam Efficiently: Reducing Electron-dose in the STEM via Flyback Compensation

In the scanning transmission electron microscope, fast-scanning and frame-averaging are two widely used approaches for reducing electron-beam damage and increasing image signal-noise ratio which require no additional specialised hardware. Unfortunately, for scans with short pixel dwell-times (less than 5 $μ$s), line flyback time represents an increasingly wasteful overhead. Although beam exposure during flyback causes damage while yielding no useful information, scan-coil hysteresis means that eliminating it entirely leads to unacceptably distorted images. In this work, we reduce this flyback to an absolute minimum by calibrating and correcting for this hysteresis in postprocessing. Substantial improvements in dose-efficiency can be realised (up to 20 %), while crystallographic and spatial fidelity is maintained for displacement/strain measurement.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Cost & Capability Compromises in STEM Instrumentation for Low-Voltage Imaging

Low voltage transmission electron microscopy (<=80 kV) has many applications in imaging beam-sensitive samples, such as metallic nanoparticles, which may become damaged at higher voltages. To improve resolution, spherical aberration can be corrected for in a Scanning Transmission Electron Microscope (STEM), however chromatic aberration may then dominate, limiting the ultimate resolution of the microscope. Using image simulations, we examine how a chromatic aberration corrector, different objective lenses, and different beam energy-spreads each affect the image quality of a gold nanoparticle imaged at low voltages in a spherical aberration-corrected STEM. Quantitative analysis of the simulated examples can inform the choice of instrumentation for low-voltage imaging. We here demonstrate a methodology whereby the optimum energy spread to operate a specific STEM can be deduced. This methodology can then be adapted to the specific sample and instrument of the reader, enabling them to make an informed economical choice as to what would be most beneficial for their STEM in the cost-conscious landscape of scientific infrastructure.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Increasing Spatial Fidelity and SNR of 4D-STEM using Multi-frame Data Fusion

4D-STEM, in which the 2D diffraction plane is captured for each 2D scan position in the scanning transmission electron microscope (STEM) using a pixelated detector, is complementing and increasingly replacing existing imaging approaches. However, at present the speed of those detectors, although having drastically improved in the recent years, is still 100 to 1,000 times slower than the current PMT technology operators are used to. Regrettably, this means environmental scanning-distortion often limits the overall performance of the recorded 4D data. Here we present an extension of existing STEM distortion correction techniques for the treatment of 4D-data series. Although applicable to 4D-data in general, we use electron ptychography and electric-field mapping as model cases and demonstrate an improvement in spatial-fidelity, signal-to-noise ratio (SNR), phase-precision and spatial-resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Unlocking the Origin of Compositional Fluctuations in InGaN Light Emitting Diodes

The accurate determination of the compositional fluctuations is pivotal in understanding their role in the reduction of efficiency in high indium content $In_{x}Ga_{1-x}N$ light-emitting diodes, the origin of which is still poorly understood. Here we have combined electron energy loss spectroscopy (EELS) imaging at sub-nanometer resolution with multiscale computational models to obtain a statistical distribution of the compositional fluctuations in $In_{x}Ga_{1-x}N$ quantum wells (QWs). Employing a multiscale computational model, we show the tendency of intrinsic compositional fluctuation in $In_{x}Ga_{1-x}N$ QWs at different Indium concentration and in the presence of strain. We have developed a systematic formalism based on the autonomous detection of compositional fluctuation in observed and simulated EELS maps. We have shown a direct comparison between the computationally predicted and experimentally observed compositional fluctuations. We have found that although a random alloy model captures the distribution of compositional fluctuations in relatively low In ($\sim$ 18%) content $In_{x}Ga_{1-x}N$ QWs, there exists a striking deviation from the model in higher In content ($\geq$ 24%) QWs. Our results highlight a distinct behavior in carrier localization driven by compositional fluctuations in the low and high In-content InGaN QWs, which would ultimately affect the performance of LEDs. Furthermore, our robust computational and atomic characterization method can be widely applied to study materials in which nanoscale compositional fluctuations play a significant role on the material performance.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Development of a Practicable Digital Pulse Read-out for Dark-field STEM

When characterising beam-sensitive materials in the scanning transmission electron microscope (STEM), low-dose techniques are essential for the reliable observation of samples in their true state. A simple route to minimise both the total electron-dose and the dose-rate is to reduce the electron beam-current and/or raster the probe at higher speeds. At the limit of these settings, and with current detectors, the resulting images suffer from unacceptable artefacts including; signal-streaking, detector-afterglow, and poor signal-to-noise ratios (SNR). In this manuscript we present an alternative approach to capture dark-field STEM images by pulse-counting individual electrons as they are scattered to the annular dark-field (ADF) detector. Digital images formed in this way are immune from analogue artefacts of streaking or afterglow and allow clean, high-SNR images to be obtained even at low beam-currents. We present results from both a ThermoFisher FEI Titan G2 operated at 300kV and a Nion UltraSTEM200 operated at 200kV, and compare the images to conventional analogue recordings. ADF data are compared with analogue counterparts for each instrument, a digital detector-response scan is performed on the Titan, and the overall rastering efficiency is evaluated for various scanning parameters.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Synthesis of WTe2 thin films and highly-crystalline nanobelts from pre-deposited reactants

Tungsten ditelluride is a layered transition metal dichalcogenide (TMD) that has attracted increasing research interest in recent years. WTe2 has demonstrated large non-saturating magnetoresistance, potential for spintronic applications and promise as a type-II Weyl semimetal. The majority of works on WTe2 have relied on mechanically-exfoliated flakes from chemical vapour transport (CVT) grown crystals for their investigations. While producing high-quality samples, this method is hindered by several disadvantages including long synthesis times, high-temperature anneals and an inherent lack of scalability. In this work, a synthesis method is demonstrated that allows the production of large-area polycrystalline films of WTe2. This is achieved by the reaction of pre-deposited films of W and Te at a relatively low temperature of 550 degC. Sputter X-ray photoelectron spectroscopy reveals the rapid but self-limiting nature of the oxidation of these WTe2 films in ambient conditions. The WTe2 films are composed of areas of micrometre sized nanobelts that can be isolated and offer potential as an alternative to CVT-grown samples. These nanobelts are highly crystalline with low defect densities indicated by TEM and show promising initial electrical results.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Interface-induced Polarization in SrTiO$_3$-LaCrO$_3$ Superlattices

Epitaxial interfaces and superlattices comprised of polar and non-polar perovskite oxides have generated considerable interest because they possess a range of desirable properties for functional devices. In this work, emergent polarization in superlattices of SrTiO$_3$ (STO) and LaCrO$_3$ (LCO) is demonstrated. By controlling the interfaces between polar LCO and non-polar STO, polarization is induced throughout the STO layers of the superlattice. Using x-ray absorption near-edge spectroscopy and aberration-corrected scanning transmission electron microscopy displacements of the Ti cations off-center within TiO6 octahedra along the superlattice growth direction are measured. This distortion gives rise to built-in potential gradients within the STO and LCO layers, as measured by in situ x-ray photoelectron spectroscopy. Density functional theory models explain the mechanisms underlying this behavior, revealing the existence of both an intrinsic polar distortion and a built-in electric field, which are due to alternately positively and negatively charged interfaces in the superlattice. This study paves the way for controllable polarization for carrier separation in multilayer materials and highlights the crucial role that interface structure plays in governing such behavior.

0 citations0 reviewsNo code linkedOpen access