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Leonid S. Levitov

Leonid S. Levitov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-conquant-ph

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Published work

27 published item(s)

preprint2022arXiv

Direct observation of vortices in an electron fluid

Vortices are the hallmarks of hydrodynamic flow. Recent studies indicate that strongly-interacting electrons in ultrapure conductors can display signatures of hydrodynamic behavior including negative nonlocal resistance, Poiseuille flow in narrow channels, and a violation of the Wiedemann-Franz law. Here we provide the first visualization of whirlpools in an electron fluid. By utilizing a nanoscale scanning superconducting quantum interference device on a tip (SQUID-on-tip) we image the current distribution in a circular chamber connected through a small aperture to an adjacent narrow current carrying strip in high-purity type-II Weyl semimetal WTe2. In this geometry, the Gurzhi momentum diffusion length and the size of the aperture determine the vortex stability phase diagram. We find that the vortices are present only for small apertures, whereas the flow is laminar (non-vortical) for larger apertures, consistent with the theoretical analysis of the hydrodynamic regime and in contrast to the expectations of ballistic transport in WTe2 at low temperatures. Moreover, near the vortical-to-laminar transition, we observe a single vortex in the chamber splitting into two vortices, a behavior that can occur only in the hydrodynamic regime and cannot be sustained by ballistic transport. These findings suggest a novel mechanism of hydrodynamic flow: instead of the commonly considered electron-electron scattering at the bulk, which becomes extremely weak at low temperatures, the spatial diffusion of charge carriers' momenta is enabled by small-angle scattering at the planar surfaces of thin pure crystals. This surface-induced para-hydrodynamics opens new avenues for exploring and utilizing electron fluidics in high-mobility electron systems.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Berry phase jumps and giant nonreciprocity in Dirac quantum dots

We predict that a strong nonreciprocity in the resonance spectra of Dirac quantum dots can be induced by the Berry phase. The nonreciprocity arises in relatively weak magnetic fields and is manifest in anomalously large field-induced splittings of quantum dot resonances which are degenerate at $B=0$ due to time-reversal symmetry. This exotic behavior, which is governed by field-induced jumps in the Berry phase of confined electronic states, is unique to quantum dots in Dirac materials and is absent in conventional quantum dots. The effect is strong for gapless Dirac particles and can overwhelm the $B$-induced orbital and Zeeman splittings. A finite Dirac mass suppresses the effect. The nonreciprocity, predicted for generic two-dimensional Dirac materials, is accessible through Faraday and Kerr optical rotation measurements and scanning tunneling spectroscopy.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Imaging electrostatically confined Dirac fermions in graphene quantum dots

Electrostatic confinement of charge carriers in graphene is governed by Klein tunneling, a relativistic quantum process in which particle-hole transmutation leads to unusual anisotropic transmission at pn junction boundaries. Reflection and transmission at these novel potential barriers should affect the quantum interference of electronic wavefunctions near these boundaries. Here we report the use of scanning tunneling microscopy (STM) to map the electronic structure of Dirac fermions confined by circular graphene pn junctions. These effective quantum dots were fabricated using a new technique involving local manipulation of defect charge within the insulating substrate beneath a graphene monolayer. Inside such graphene quantum dots we observe energy levels corresponding to quasi-bound states and we spatially visualize the quantum interference patterns of confined electrons. Dirac fermions outside these quantum dots exhibit Friedel oscillation-like behavior. Bolstered with a theoretical model describing relativistic particles in a harmonic oscillator potential, our findings yield new insight into the spatial behavior of electrostatically confined Dirac fermions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Origin and magnitude of 'designer' spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides

We use a combination of experimental techniques to demonstrate a general occurrence of spin-orbit interaction (SOI) in graphene on transition metal dichalcogenide (TMD) substrates. Our measurements indicate that SOI is ultra-strong and extremely robust, despite it being merely interfacially-induced, with neither graphene nor the TMD substrates changing their structure. This is found to be the case irrespective of the TMD material used, of the transport regime, of the carrier type in the graphene band, and of the thickness of the graphene multilayer. Specifically, we perform weak antilocalization measurements as the simplest and most general diagnostic of SOI, and show that the spin relaxation time is very short in all cases regardless of the elastic scattering time. Such a short spin-relaxation time strongly suggests that the SOI originates from a modification of graphene band structure. We confirmed this expectation by measuring a gate-dependent beating, and a corresponding frequency splitting, in the low-field Shubnikov-de Haas magneto-resistance oscillations in high quality bilayer graphene on WSe$_2$. These measurements provide an unambiguous diagnostic of a SOI-induced splitting in the electronic band structure, and their analysis allows us to determine the SOI coupling constants for the Rashba term and the so-called spin-valley coupling term, i.e., the terms that were recently predicted theoretically for interface-induced SOI in graphene. The magnitude of the SOI splitting is found to be on the order of 10 meV, more than 100 times greater than the SOI intrinsic to graphene. Both the band character of the interfacially induced SOI, as well as its robustness and large magnitude make graphene-on-TMD a promising system to realize and explore a variety of spin-dependent transport phenomena, such as, in particular, spin-Hall and valley-Hall topological insulating states.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Resonant Tunneling and Intrinsic Bistability in Twisted Graphene Structures

We predict that vertical transport in heterostructures formed by twisted graphene layers can exhibit a unique bistability mechanism. Intrinsically bistable $I$-$V$ characteristics arise from resonant tunneling and interlayer charge coupling, enabling multiple stable states in the sequential tunneling regime. We consider a simple trilayer architecture, with the outer layers acting as the source and drain and the middle layer floating. Under bias, the middle layer can be either resonant or non-resonant with the source and drain layers. The bistability is controlled by geometric device parameters easily tunable in experiments. The nanoscale architecture can enable uniquely fast switching times.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Survival, decay, and topological protection in non-Hermitian quantum transport

Non-Hermitian quantum systems can exhibit unique observables characterizing topologically protected transport in the presence of decay. The topological protection arises from winding numbers associated with non-decaying dark states, which are decoupled from the environment and thus immune to dissipation. Here we develop a classification of topological dynamical phases for one-dimensional quantum systems with periodically-arranged absorbing sites. This is done using the framework of Bloch theory to describe the dark states and associated topological invariants. The observables, such as the average particle displacement over its life span, feature quantized contributions that are governed by the winding numbers of cycles around dark-state submanifolds in the Hamiltonian parameter space. Changes in the winding numbers at topological transitions are manifested in non-analytic behavior of the observables. We discuss the conditions under which nontrivial topological phases may be found, and provide examples that demonstrate how additional constraints or symmetries can lead to rich topological phase diagrams.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Accessing phonon polaritons in hyperbolic crystals by ARPES

Recently studied hyperbolic materials host unique phonon-polariton (PP) modes. The ultra-short wavelengths of these modes, which can be much smaller than those of conventional exciton-polaritons, are of high interest for extreme sub-diffraction nanophotonics schemes. Polar hyperbolic materials such as hexagonal boron nitride can be used to realize strong long-range coupling between PP modes and extraneous charge degrees of freedom. The latter, in turn, can be used to control and probe PP modes. Of special interest is coupling between PP modes and plasmons in an adjacent graphene sheet, which opens the door to accessing PP modes by angle-resolved photoemission spectroscopy (ARPES). A rich structure in the graphene ARPES spectrum due to PP modes is predicted, providing a new probe of PP modes and their coupling to graphene plasmons.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observing Atomic Collapse Resonances in Artificial Nuclei on Graphene

Relativistic quantum mechanics predicts that when the charge of a superheavy atomic nucleus surpasses a certain threshold, the resulting strong Coulomb field causes an unusual atomic collapse state; this state exhibits an electron wave function component that falls toward the nucleus, as well as a positron component that escapes to infinity. In graphene, where charge carriers behave as massless relativistic particles, it has been predicted that highly charged impurities should exhibit resonances corresponding to these atomic collapse states. We have observed the formation of such resonances around artificial nuclei (clusters of charged calcium dimers) fabricated on gated graphene devices via atomic manipulation with a scanning tunneling microscope. The energy and spatial dependence of the atomic collapse state measured with scanning tunneling microscopy revealed unexpected behavior when occupied by electrons.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Quasi-Relativistic Doppler Effect and Non-Reciprocal Plasmons in Graphene

Strong optical nonreciprocity at the nanoscale, relying on extreme one-way modes and backscattering suppression, can enable fundamentally new approaches in optoelectronics and plasmonics. Of special interest is achieving nonreciprocity in systems devoid of magnetic couplings. We describe a new approach based on the plasmonic Doppler effect which takes place for plasmons propagating in the presence of an electrical DC current. Large carrier drift velocities reachable in high-mobility electron systems, such as graphene, can enable strongly nonreciprocal or even fully one-way modes. Striking effects such as mode isolation and one-way transmission in DC-current-controlled Mach-Zehnder interferometers provide clear manifestations of plasmonic nonreciprocity. Phenomena such as plasmon resonance splitting into a doublet, induced by a DC current, afford new ways to generate and exploit unidirectionally propagating plasmon modes.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Shockley-Ramo theorem and long-range photocurrent response in gapless materials

Scanning photocurrent maps of gapless materials, such as graphene, often exhibit complex patterns of hot spots positioned far from current-collecting contacts. We develop a general framework that helps to explain the unusual features of the observed patterns, such as the directional effect and the global character of photoresponse. We show that such a response is captured by a simple Shockley-Ramo-type approach. We examine specific examples and show that the photoresponse patterns can serve as a powerful tool to extract information about symmetry breaking, inhomogeneity, chirality, and other local characteristics of the system.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spatially resolved edge currents and guided-wave electronic states in graphene

A far-reaching goal of graphene research is exploiting the unique properties of carriers to realize extreme nonclassical electronic transport. Of particular interest is harnessing wavelike carriers to guide and direct them on submicron scales, similar to light in optical fibers. Such modes, while long anticipated, have never been demonstrated experimentally. In order to explore this behavior, we employ superconducting interferometry in a graphene Josephson junction to reconstruct the real-space supercurrent density using Fourier methods. Our measurements reveal charge flow guided along crystal boundaries close to charge neutrality. We interpret the observed edge currents in terms of guided-wave states, confined to the edge by band bending and transmitted as plane waves. As a direct analog of refraction-based confinement of light in optical fibers, such nonclassical states afford new means for information transduction and processing at the nanoscale.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Topological Bloch Bands in Graphene Superlattices

We outline an approach to endow a plain vanilla material with topological properties by creating topological bands in stacks of manifestly nontopological atomically thin materials. The approach is illustrated with a model system comprised of graphene stacked atop hexagonal-boron-nitride. In this case, the Berry curvature of the electron Bloch bands is highly sensitive to the stacking configuration. As a result, electron topology can be controlled by crystal axes alignment, granting a practical route to designer topological materials. Berry curvature manifests itself in transport via the valley Hall effect and long-range chargeless valley currents. The non-local electrical response mediated by such currents provides diagnostics for band topology.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Energy Flows in Graphene: Hot Carrier Dynamics and Cooling

Long lifetimes of hot carriers can lead to qualitatively new types of responses in materials. The magnitude and time scales for these responses reflect the mechanisms governing energy flows. We examine the microscopics of two processes which are key for energy transport, focusing on the unusual behavior arising due to graphene's unique combination of material properties. One is hot carrier generation in its photoexcitation dynamics, where hot carriers multiply through an Auger type carrier-carrier scattering cascade. The hot-carrier generation manifests itself through elevated electronic temperatures which can be accessed in a variety of ways, in particular optical conductivity measurements. Another process of high interest is electron-lattice cooling. We survey different cooling pathways and discuss the cooling bottleneck arising for the momentum-conserving electron-phonon scattering pathway. We show how this bottleneck can be relieved by higher-order collisions - supercollisions - and examine the variety of supercollision processes that can occur in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Topological Valley Currents in Gapped Dirac Materials

Gapped 2D Dirac materials, in which inversion symmetry is broken by a gap-opening perturbation, feature a unique valley transport regime. The system ground state hosts dissipationless persistent valley currents existing even when topologically protected edge modes are absent or when they are localized due to edge roughness. Topological valley currents in such materials are dominated by bulk currents produced by electronic states just beneath the gap rather than by edge modes. Dissipationless currents induced by an external bias are characterized by a quantized half-integer valley Hall conductivity. The under-gap currents dominate magnetization and the charge Hall effect in a light-induced valley-polarized state.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Ultra-narrow ionization resonances in a quantum dot under broadband excitation

Semiconductor quantum dots driven by the broadband radiation fields of nearby quantum point contacts provide an exciting new setting for probing dynamics in driven quantum systems at the nanoscale. We report on real-time charge-sensing measurements of the dot occupation, which reveal sharp resonances in the ionization rate as a function of gate voltage and applied magnetic field. Despite the broadband nature of excitation, the resonance widths are much smaller than the scale of thermal broadening. We show that such resonant enhancement of ionization is not accounted for by conventional approaches relying on elastic scattering processes, but can be explained via a mechanism based on a bottleneck process that is relieved near excited state level crossings. The experiment thus reveals a new regime of a strongly driven quantum dynamics in few-electron systems. The theoretical results are in good agreement with observations.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Ballistic Heat Transfer and Energy Waves in an Electron System

Materials in which heat and entropy can be transmitted by directed ballistic pulses can trigger new approaches to energy transduction in solids. We predict that a ballistic energy transfer mode, with heat propagation governed by a wave equation rather than a diffusion equation, can be realized for a thermal electron-hole plasma in graphene. The new behavior originates from rapid exchange of energy and momentum in particle collisions leading to energy propagation as a collective weakly-damped oscillation. Due to the electronic nature of this mode, the estimated propagation velocity can be ~10^3 times larger than that for previously studied phonon mechanisms. The energy mode is uncharged at charge neutrality, but becomes coupled to charge dynamics upon doping. This coupling can be used for all-electric excitation and detection of energy transport.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Coulomb Drag Mechanisms in Graphene

Recent measurements revealed an anomalous Coulomb drag in graphene, hinting at new physics at charge neutrality. The anomalous drag is explained by a new mechanism based on energy transport, which involves interlayer energy transfer, coupled to charge flow via lateral heat currents and thermopower. The old and new drag mechanisms are governed by distinct physical effects, resulting in starkly different behavior, in particular for drag magnitude and sign near charge neutrality. The new mechanism explains the giant enhancement of drag near charge neutrality, as well as its sign and anomalous sensitivity to magnetic field. Under realistic conditions, energy transport dominates in a wide temperature range, giving rise to a universal value of drag which is essentially independent of the electron-electron interaction strength.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electron Interactions and Gap Opening in Graphene Superlattices

We develop a theory of interaction effects in graphene superlattices, where tunable superlattice periodicity can be used as a knob to control the gap at the Dirac point. Applied to graphene on hexa-boron-nitride (G/h-BN), our theory predicts substantial many-body enhancement of this gap. Tunable by the moire superlattice periodicity, a few orders of magnitude enhancement is reachable under optimal conditions. The Dirac point gap enhancement can be much larger than that of the minigaps opened by Bragg scattering at principal superlattice harmonics. This naturally explains the conundrum of large Dirac point gaps recently observed in G/h-BN heterostructures and their tunability by the G/h-BN twist angle.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Hall Drag and Magnetodrag in Graphene

Massless Dirac fermions in graphene at charge neutrality form a strongly interacting system in which both charged and neutral (energy) modes play an important role. These modes are essentially decoupled in the absence of a magnetic field, but become strongly coupled when a field is applied. We show that these ideas explain the recently observed giant magnetodrag, arising in classically weak fields when electron density is tuned near charge neutrality. We predict strong Hall drag in this regime, which is in stark departure from the weak coupling regime, where theory predicts the absence of Hall drag. Energy-driven magnetodrag and Hall drag arise in a wide temperature range and at weak magnetic fields, and feature an unusually strong dependence on field and carrier density.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Disorder-Assisted Electron-Phonon Scattering and Cooling Pathways in Graphene

We predict that graphene is a unique system where disorder-assisted scattering (supercollisions) dominates electron-lattice cooling over a wide range of temperatures, up to room temperature. This is so because for momentum-conserving electron-phonon scattering the energy transfer per collision is severely constrained due to a small Fermi surface size. The characteristic $T^3$ temperature dependence and power-law cooling dynamics provide clear experimental signatures of this new cooling mechanism. The cooling rate can be changed by orders of magnitude by varying the amount of disorder which offers means for a variety of new applications that rely on hot-carrier transport.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Energy-driven Drag at Charge Neutrality in Graphene

Coulomb coupling between proximal layers in graphene heterostructures results in efficient energy transfer between the layers. We predict that, in the presence of correlated density inhomogeneities in the layers, vertical energy transfer has a strong impact on lateral charge transport. In particular, for Coulomb drag it dominates over the conventional momentum drag near zero doping. The dependence on doping and temperature, which is different for the two drag mechanisms, can be used to separate these mechanisms in experiment. We predict distinct features such as a peak at zero doping and a multiple sign reversal, which provide diagnostics for this new drag mechanism.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Mapping Dirac Quasiparticles near a Single Coulomb Impurity on Graphene

The response of Dirac fermions to a Coulomb potential is predicted to differ significantly from the behavior of non-relativistic electrons seen in traditional atomic and impurity systems. Surprisingly, many key theoretical predictions for this ultra-relativistic regime have yet to be tested in a laboratory. Graphene, a 2D material in which electrons behave like massless Dirac fermions, provides a unique opportunity to experimentally test such predictions. The response of Dirac fermions to a Coulomb potential in graphene is central to a wide range of electronic phenomena and can serve as a sensitive probe of graphene's intrinsic dielectric constant, the primary factor determining the strength of electron-electron interactions in this material. Here we present a direct measurement of the nanoscale response of Dirac fermions to a single Coulomb potential placed on a gated graphene device. Scanning tunneling microscopy and spectroscopy were used to fabricate tunable charge impurities on graphene and to measure how they are screened by Dirac fermions for a Q = +1|e| impurity charge state. Electron-like and hole-like Dirac fermions were observed to respond very differently to tunable Coulomb potentials. Comparison of this electron-hole asymmetry to theoretical simulations has allowed us to test basic predictions for the behavior of Dirac fermions near a Coulomb potential and to extract the intrinsic dielectric constant of graphene: ε_g= 3.0 \pm 1.0. This small value of ε_g indicates that microscopic electron-electron interactions can contribute significantly to graphene properties.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Photo-excited Carrier Dynamics and Impact Excitation Cascade in Graphene

Photo-excitation in solids can trigger a cascade in which multiple particle-hole excitations are generated. We analyze the carrier multiplication cascade of impact excitation processes in graphene and show that the number of pair excitations has a strong dependence on doping, which makes carrier multiplication gate-tunable. We also predict that the number of excited pairs as well as the characteristic time of the cascade scale linearly with photo-excitation energy. These dependences, as well as sharply peaked angular distribution of pair excitations, provide clear experimental signatures of carrier multiplication.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Capacitance of Graphene Bilayer as a Which-Layer Probe

The unique capabilities of capacitance measurements in bilayer graphene enable probing of layer-specific properties that are normally out of reach in transport measurements. Furthermore, capacitance measurements in the top-gate and penetration field geometries are sensitive to different physical quantities: the penetration field capacitance probes the two layers equally, whereas the top gate capacitance preferentially samples the near layer, resulting in the "near-layer capacitance enhancement" effect observed in recent top-gate capacitance measurements. We present a detailed theoretical description of this effect and show that capacitance can be used to determine the equilibrium layer polarization, a potentially useful tool in the study of broken symmetry states in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Hot Carrier Transport and Photocurrent Response in Graphene

Strong electron-electron interactions in graphene are expected to result in multiple-excitation generation by the absorption of a single photon. We show that the impact of carrier multiplication on photocurrent response is enhanced by very inefficient electron cooling, resulting in an abundance of hot carriers. The hot-carrier-mediated energy transport dominates the photoresponse and manifests itself in quantum efficiencies that can exceed unity, as well as in a characteristic dependence of the photocurrent on gate voltages. The pattern of multiple photocurrent sign changes as a function of gate voltage provides a fingerprint of hot-carrier-dominated transport and carrier multiplication.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Hot Carrier-Assisted Intrinsic Photoresponse in Graphene

Graphene is a new material showing high promise in optoelectronics, photonics, and energy-harvesting applications. However, the underlying physical mechanism of optoelectronic response has not been established. Here, we report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse, provide strong evidence that non-local hot-carrier transport, rather than the photovoltaic effect, dominates the intrinsic photoresponse in graphene. This novel regime, which features a long-lived and spatially distributed hot carrier population, may open the doorway for optoelectronic technologies exploiting efficient energy transport at the nanoscale.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Pulse calibration and non-adiabatic control of solid-state artificial atoms

Transitions in an artificial atom, driven non-adiabatically through an energy-level avoided crossing, can be controlled by carefully engineering the driving protocol. We have driven a superconducting persistent-current qubit with a large-amplitude, radio-frequency field. By applying a bi-harmonic waveform generated by a digital source, we demonstrate a mapping between the amplitude and phase of the harmonics produced at the source and those received by the device. This allows us to image the actual waveform at the device. This information is used to engineer a desired time dependence, as confirmed by detailed comparison with simulation.

0 citations0 reviewsNo code linkedOpen access