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E. L. Ivchenko

E. L. Ivchenko appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.otherphysics.opticsphysics.app-phquant-ph

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Published work

47 published item(s)

preprint2021arXiv

The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap

The Landé or $g$-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI$_3$, MAPb(Br$_{0.5}$Cl$_{0.5}$)$_3$, MAPb(Br$_{0.05}$Cl$_{0.95}$)$_3$, FAPbBr$_3$, FA$_{0.9}$Cs$_{0.1}$PbI$_{2.8}$Br$_{0.2}$) and all-inorganic (CsPbBr$_3$) lead halide perovskites, determined by pump-probe Kerr rotation and spin-flip Raman scattering in magnetic fields up to 10~T at cryogenic temperatures. Further, we use first-principles DFT calculations in combination with tight-binding and $\mathbf k \cdot \mathbf p$ approaches to calculate microscopically the Landé factors. The results demonstrate their universal dependence on the band gap energy across the different perovskite material classes, which can be summarized in a universal semi-phenomenological expression, in good agreement with experiment.

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preprint2020arXiv

Observation of anomalously strong penetration of terahertz electric field through terahertz-opaque gold films into a GaAs/AlGaAs quantum well

We observe an anomalously high electric field of terahertz (THz) radiation acting on a two-dimensional electron gas (2DEG) placed beneath a thin gold film, which, however, is supposed to be opaque at THz frequencies. We show that the anomalously strong penetration of the THz electric field through a very high conductive gold film emerges if two conditions are fulfilled simultaneously: (i) the film's thickness is less than the skin depth and (ii) the THz electric field is measured beneath the film at distances substantially smaller than the radiation wavelength. We demonstrate that under these conditions the strength of the field acting on a 2DEG is almost the same as it would be in the absence of the gold film. The effect is detected for macroscopically homogeneous perforation-free gold films illuminated by THz-laser radiation with a spot smaller than the film area. This eliminates the near-field of the edge diffraction as a possible cause of the anomalous penetration. The microscopic origin of the effect remains unexplained in its details, yet. The observed effect can be used for the development of THz devices based on two-dimensional materials requiring robust highly conducting top gates placed at less than nanometer distance from the electron gas location.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Semiclassical theory of the circular photogalvanic effect in gyrotropic systems

We develop a theory of circular photogalvanic effect (CPGE) for classically high photon energies which exceed the electron scattering rate but are small compared to the average electron kinetic energy. In this frequency range one can calculate the CPGE by using two different approaches. In the fully quantum-mechanical approach we find the photocurrent density by applying Fermi's golden rule for indirect intraband optical transitions with virtual intermediate states both in the conduction and valence bands. In the framework of the semiclassical approach, we apply a generalized Boltzmann equation with accounts for the Berry-curvature induced anomalous velocity, side jumps and skew scattering. The calculation is carried out for a wurtzite symmetry crystal. Both methods yield the same results for the CPGE current demonstrating consistency between the two approaches and applicability of the semiclassical theory for the description of nonlinear high-frequency transport.

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preprint2020arXiv

Theory of single and double electron spin-flip Raman scattering in semiconductor nanoplatelets

A theory of electron spin-flip Raman scattering (SFRS) is presented that describes the Raman spectral signals shifted by both single and twice the electron Zeeman energy under nearly resonant excitation of the heavy hole excitons in semiconductor nanoplatelets. We analyze the spin structure of photoexcited intermediate states, derive compound matrix elements of the spin-flip scattering and obtain polarization properties of the one- and two-electron SFRS common for all the intermediate states. We show that, in the resonant scattering process under consideration, the complexes "exciton plus localized resident electrons" play the role of main intermediate states rather than tightly bound trion states. It is demonstrated that, in addition to the direct photoexcitation (and similar photorecombination) channel, there is another indirect channel contributing to the SFRS process. In the indirect channel, the photohole forms the exciton state with the resident electron removed from the localization site while the photoelectron becomes localized on this site. The theoretical results are compared with recent experimental findings for ensembles of CdSe nanoplatelets.

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preprint2019arXiv

Electron-nucleus spin correlation conservation of the spin dependent recombination in Ga$^{2+}$ centers

Spin dependent recombination in GaAsN offers many interesting possibilities in the design of spintronic devices mostly due to its astounding capability to reach conduction band electron spin polarizations close to 100% at room temperature. The mechanism behind the spin selective capture of electrons in Ga$^{2+}$ paramagnetic centers is revisited in this paper to address inconsistencies common to most previously presented models. Primarily, these errors manifest themselves as major disagreements with the experimental observations of two key characteristics of this phenomenon: the effective Overhauser-like magnetic field and the width of the photoluminescence Lorentzian-like curves as a function of the illumination power. These features are not only essential to understand the spin dependent recombination in GaAsN, but are also key to the design of novel spintronic devices. Here we demonstrate that the particular structure of the electron capture expressions introduces spurious electron-nucleus correlations that artificially alter the balance between the hyperfine and the Zeeman contributions. This imbalance strongly distorts the effective magnetic field and width characteristics. In this work we propose an alternative recombination mechanism that preserves the electron-nucleus correlations and, at the same time, keeps the essential properties of the spin selective capture of electrons. This mechanism yields a significant improvement to the agreement between experimental and theoretical results. In particular, our model gives results in very good accord with the experimental effective Overhauser-like magnetic field and width data, and with the degree of circular polarization under oblique magnetic fields.

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preprint2016arXiv

Coherent Electron Zitterbewegung

Zitterbewegung is a striking consequence of relativistic quantum mechanics which predicts that free Dirac electrons exhibit a rapid trembling motion even in the absence of external forces. The trembling motion of an electron results from the interference between the positive and the negative-energy solutions of the Dirac equation, separated by one MeV, leading to oscillations at extremely high frequencies which are out of reach experimentally. Recently, it was shown theoretically that electrons in III-V semiconductors are governed by similar equations in the presence of spin-orbit coupling. The small energy splittings up to meV result in Zitterbewegung at much smaller frequencies which should be experimentally accessible as an AC current. Here, we demonstrate the Zitterbewegung of electrons in a solid. We show that coherent electron Zitterbewegung can be triggered by initializing an ensemble of electrons in the same spin states in strained n-InGaAs and is probed as an AC current at GHz frequencies. Its amplitude is shown to increase linearly with both the spin-orbit coupling strength and the Larmor frequency of the external magnetic field. The latter dependence is the hallmark of the dynamical generation mechanism of the oscillatory motion of the Zitterbewegung. Our results demonstrate that relativistic quantum mechanics can be studied in a rather simple solid state system at moderate temperatures. Furthermore, the large amplitude of the AC current at high precession frequencies enables ultra-fast spin sensitive electric read-out in solids.

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preprint2016arXiv

Giant permanent dipole moment of 2D excitons bound to a single stacking fault

We investigate the magneto-optical properties of excitons bound to single stacking faults in high-purity GaAs. We find that the two-dimensional stacking fault potential binds an exciton composed of an electron and a heavy-hole, and confirm a vanishing in-plane hole $g$-factor, consistent with the atomic-scale symmetry of the system. The unprecedented homogeneity of the stacking-fault potential leads to ultra-narrow photoluminescence emission lines (with full-width at half maximum ${\lesssim 80~μ\text{eV} }$) and reveals a large magnetic non-reciprocity effect that originates from the magneto-Stark effect for mobile excitons. These measurements unambiguously determine the direction and magnitude of the giant electric dipole moment (${\gtrsim e \cdot 10~\text{nm}}$) of the stacking-fault exciton, making stacking faults a promising new platform to study interacting excitonic gases.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Hyperfine coupling of hole and nuclear spins in symmetric GaAs quantum dots

In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath fluctuations. Prolonging hole spin stability relies on a better understanding of the hole to nuclear spin hyperfine coupling which we address both in experiment and theory in the symmetric (111) GaAs/AlGaAs droplet dots. In magnetic fields applied along the growth axis, we create a strong nuclear spin polarization detected through the positively charged trion X$^+$ Zeeman and Overhauser splittings. The observation of four clearly resolved photoluminescence lines - a unique property of the (111) nanosystems - allows us to measure separately the electron and hole contribution to the Overhauser shift. The hyperfine interaction for holes is found to be about five times weaker than that for electrons. Our theory shows that this ratio depends not only on intrinsic material properties but also on the dot shape and carrier confinement through the heavy-hole mixing, an opportunity for engineering the hole-nuclear spin interaction by tuning dot size and shape.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spin-dependent recombination in GaAs(1-x)N(x) alloys at oblique magnetic field

We have studied experimentally and theoretically the optical orientation and spin-dependent Shockley-Read-Hall recombination in a semiconductor in a magnetic field at an arbitrary angle between the field and circularly polarized exciting beam. The experiments are performed at room temperature in GaAsN alloys where deep paramagnetic centers are responsible for the spin-dependent recombination. The observed magnetic-field dependences of the circular polarization r(B) and intensity J(B) of photoluminescence can be approximately described as a superposition of two Lorentzian contours, normal and inverted, with their half-widths differing by an order of magnitude. The normal (narrow) Lorentzian contour is associated with depolarization of the transverse (to the field) component of spin polarization of the localized electrons, whereas the inverted (broad) Lorentzian is due to suppression of the hyperfine interaction of the localized electron with the defect nucleus. The ratio between the height of one Lorentzian and depth of the other is governed by the field tilt angle. In contrast to the hyperfine interaction of a shallow-donor-bound electron with a large number of nuclei of the crystal lattice, in the optical orientation of the electron-nuclear system under study no additional narrow peak appears in the oblique field. This result demonstrates that in the GaAsN alloys the hyperfine interaction of the localized electron with the single nucleus of the paramagnetic center remains strong even at room temperature. For a theoretical description of the experiment, we have extended the theory of spin-dependent recombination via deep paramagnetic centers with the nuclear angular momentum I = 1/2 developed previously for the particular case of the longitudinal field. The calculated curves r(B), J(B) agree with the approximate description of the experimental dependences as a sum of two Lorentzians.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magneto-optics in transition metal diselenide monolayers

We perform photoluminescence experiments at 4K on two different transition metal diselenide monolayers, namely MoSe2 and WSe2 in magnetic fields $B_z$ up to 9T applied perpendicular to the sample plane. In MoSe2 monolayers the valley polarization of the neutral and the charged exciton (trion) can be tuned by the magnetic field, independent of the excitation laser polarization. In the investigated WSe2 monolayer sample the evolution of the trion valley polarization depends both on the applied magnetic field and the excitation laser helicity, while the neutral exciton valley polarization depends only on the latter. Remarkably we observe a reversal of the sign of the trion polarization between WSe2 and MoSe2. For both systems we observe a clear Zeeman splitting for the neutral exciton and the trion of about $\pm2$meV at $B_z\mp9$T. The extracted Landé-factors for both exciton complexes in both materials are $g\approx -4$.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magneto-spectroscopy of excited states in charge-tunable GaAs/AlGaAs [111] quantum dots

We present a combined experimental and theoretical study of highly charged and excited electron-hole complexes in strain-free (111) GaAs/AlGaAs quantum dots grown by droplet epitaxy. We address the complexes with one of the charge carriers residing in the excited state, namely, the ``hot'' trions X$^{-*}$ and X$^{+*}$, and the doubly negatively charged exciton X$^{2-}$. Our magneto-photoluminescence experiments performed on single quantum dots in the Faraday geometry uncover characteristic emission patterns for each excited electron-hole complex, which are very different from the photoluminescence spectra observed in (001)-grown quantum dots. We present a detailed theory of the fine structure and magneto-photoluminescence spectra of X$^{-*}$, X$^{+*}$ and X$^{2-}$ complexes, governed by the interplay between the electron-hole Coulomb exchange interaction and the heavy-hole mixing, characteristic for these quantum dots with a trigonal symmetry. Comparison between experiment and theory of the magneto-photoluminescence allows for precise charge state identification, as well as extraction of electron-hole exchange interaction constants and $g$-factors for the charge carriers occupying excited states.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Noncentrosymmetric plasmon modes and giant terahertz photocurrent in a two-dimensional plasmonic crystal

We introduce and theoretically study the plasmon-photogalvanic effect in the planar noncentrosymmetric plasmonic crystal containing a homogeneous two-dimensional electron system gated by a periodic metal grating with an asymmetric unit cell. The plasmon-photogalvanic DC current arises due to the two-dimensional electron drag by the noncentrosymmetric plasmon modes excited under normal incidence of terahertz radiation. We show that the collective plasmon modes of the planar plasmonic crystal become strongly noncentrosymmetric in the weak coupling regime of their anticrossing. Large plasmon wavevector (which is typically by two-three orders of magnitude greater than the terahertz photon wavevector) along with strong near-field enhancement at the plasmon resonance make the plasmonic drag a much stronger effect compared to the photon drag observed in conventional two-dimensional electron systems.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin and valley dynamics of excitons in transition metal dichalcogenides monolayers

Monolayers of transition metal dichalcogenides, namely, molybdenum and tungsten disulfides and diselenides demonstrate unusual optical properties related to the spin-valley locking effect. Particularly, excitation of monolayers by circularly polarized light selectively creates electron-hole pairs or excitons in non-equivalent valleys in momentum space, depending on the light helicity. This allows studying the inter-valley dynamics of charge carriers and Coulomb complexes by means of optical spectroscopy. Here we present a concise review of the neutral exciton fine structure and its spin and valley dynamics in monolayers of transition metal dichalcogenides. It is demonstrated that the long-range exchange interaction between an electron and a hole in the exciton is an efficient mechanism for rapid mixing between bright excitons made of electron-hole pairs in different valleys. We discuss the physical origin of the long-range exchange interaction and outline its derivation in both the electrodynamical and $\mathbf k \cdot \mathbf p$ approaches. We further present a model of bright exciton spin dynamics driven by an interplay between the long-range exchange interaction and scattering. Finally, we discuss the application of the model to describe recent experimental data obtained by time-resolved photoluminescence and Kerr rotation techniques.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Terahertz ratchet effects in graphene with a lateral superlattice

Experimental and theoretical studies on ratchet effects in graphene with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented. A lateral superlatice deposited on top of monolayer graphene is formed either by periodically repeated metal stripes having different widths and spacings or by inter-digitated comb-like dual-grating-gate (DGG) structures. We show that the ratchet photocurrent excited by terahertz radiation and sensitive to the radiation polarization state can be efficiently controlled by the back gate driving the system through the Dirac point as well as by the lateral asymmetry varied by applying unequal voltages to the DGG subgratings. The ratchet photocurrent includes the Seebeck thermoratchet effect as well as the effects of "linear" and "circular" ratchets, sensitive to the corresponding polarization of the driving electromagnetic force. The experimental data are analyzed for the electronic and plasmonic ratchets taking into account the calculated potential profile and the near field acting on carriers in graphene. We show that the photocurrent generation is based on a combined action of a spatially periodic in-plane potential and the spatially modulated light due to the near field effects of the light diffraction.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Theory of optical spin control in quantum dot microcavities

We present a microscopic theory of optical initialization, control and detection for a single electron spin in a quantum dot embedded into a zero-dimensional microcavity. The strong coupling regime of the trion and the cavity mode is addressed. We demonstrate that efficient spin orientation by a single circularly polarized pulse is possible in relatively weak transverse magnetic fields. The possibilities for spin control by additional circularly polarized pulse are analyzed. Under optimal conditions the Kerr and Faraday rotation angles induced by the spin polarized electron may reach tens of degrees.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Charge tuning in [111] grown GaAs droplet quantum dots

We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from $-3|e|$ to $+2|e|$. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Effect of carrier heating on photovoltage in FET

We have calculated, within the framework of the Boltzmann equation, a dc electric current and emf in a two-dimensional system induced by the high-frequency field of an electromagnetic wave or the electric field of a plasmon wave. It is established that the generated current consists of two contributions, one of which is proportional to the real part of the wave vector projection of the exciting wave onto the interface plane and represents the electron drag effect, and the other contribution is proportional to the extinction coefficient of the wave in the interface plane. It is shown that the main cause of the second contribution is a nonuniform electron heating created by the wave and controlled by the energy relaxation time of the electron gas. In FET the heating mechanism of the electric-current formation can remarkably exceed the current calculated neglecting the heating.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin dynamics in semiconductors in the streaming regime

We present results of a cross-disciplinary theoretical research at the interface of spin physics and hot-electron transport. A moderately strong electric field is assumed to provide the streaming regime where each free charge carrier, an electron or a hole, accelerates quasiballistically in the "passive" region until reaching the optical-phonon energy, then emits an optical phonon and starts the next period of acceleration. The inclusion of spin degree of freedom into the streaming-regime kinetics gives rise to rich and interesting spin-related phenomena. Firstly, in the streaming regime the spin relaxation is substantially modified, and the current-induced spin orientation is remarkably increased. Under short-pulsed photoexcitation at the bottom of conduction band the photoelectrons execute a periodic damped motion in the energy space with the period equal to the free flight time of an electron in the passive region. If the short optical pulse is circularly polarized so that the photocarriers are spin oriented, then the spin energy distribution is oscillating in time as well, which can be detected in the pump-probe time-resolved experiments. We show that the spin-orbit splitting of the conduction band becomes a source for additional spin oscillations, periodic or aperiodic depending on the value of electric field.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin noise spectroscopy of a single-quantum-well microcavity

We report on the first experimental observation of spin noise in a single semiconductor quantum well embedded into a microcavity. The great cavity-enhanced sensitivity to fluctuations of optical anisotropy has allowed us to measure the Kerr rotation and ellipticity noise spectra in the strong coupling regime. The spin noise spectra clearly show two resonant features: a conventional magneto-resonant component shifting towards higher frequencies with magnetic field and an unusual "nonmagnetic" component centered at zero frequency and getting suppressed with increasing magnetic field. We attribute the first of them to the Larmor precession of free electron spins, while the second one being presumably due to hyperfine electron-nuclei spin interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin-dependent recombination and hyperfine interaction at the deep defects

We present a theoretical study of optical electron-spin orientation and spin-dependent Shockley-Read-Hall recombination taking into account the hyperfine coupling between the bound-electron spin and the nuclear spin of a deep paramagnetic center. We show that the number of master rate equations for the components of the electron-nuclear spin-density matrix is considerably reduced due to the restrictions imposed by the axial symmetry of the system under consideration. The rate equations describe the Zeeman splitting of the electron spin sublevels in the longitudinal magnetic field, the spin relaxation of free and bound electrons, and the nuclear spin relaxation in the two defect states, with one and two (singlet) bound electrons. The general theory is developed for an arbitrary value of the nuclear spin I, the magnetic-field and excitation-power dependencies of the electron and nuclear spin polarizations are calculated for the particular value of I = 1/2. The role of the nuclear spin relaxation in each of the both defect states is analyzed. The circular polarization and intensity of the edge photoluminescence as well as the dynamic nuclear spin polarization as functions of the excitation power are shown to have bell-shaped forms

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preprint2014arXiv

Spin-flip Raman scattering of the $Γ$-X mixed exciton in indirect band-gap (In,Al)As/AlAs quantum dots

The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the $Γ$- and X-conduction band valleys, from which control of their spin states can be gained. This access is used here for studying the exciton spin-level structure by resonant spin-flip Raman scattering, allowing us to accurately measure the anisotropic hole and isotropic electron $g$ factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of $Γ$-X-valley mixing, as evidenced by both experiment and theory.

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preprint2014arXiv

Split Dirac cones in HgTe/CdTe quantum wells due to symmetry-enforced level anticrossing at interfaces

We describe the fine structure of Dirac states in HgTe/CdHgTe quantum wells of critical and close-to-critical thickness and demonstrate the formation of an anticrossing gap between the tips of the Dirac cones driven by interface inversion asymmetry. By combining symmetry analysis, atomistic calculations, and k-p theory with interface terms, we obtain a quantitative description of the energy spectrum and extract the interface mixing coefficient. The zero-magnetic-field splitting of Dirac cones can be experimentally revealed in studying magnetotransport phenomena, cyclotron resonance, Raman scattering, or THz radiation absorption.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Effect of exchange interaction on the spin fluctuations of localized electrons

In this paper a microscopic theory of spin fluctuations in an ensemble of electrons localized on donors in a bulk semiconductor has been developed. Both the hyperfine interaction of the electron spin with spins of lattice nuclei and the exchange interaction between the electrons have been taken into account. We propose a model of clusters to calculate spin noise spectra of the ensemble of localized charge carriers. It has been shown that the electron-electron exchange interaction leads to an effective averaging of random nuclear fields and a shift of the peak in the spin-fluctuation spectrum towards lower frequencies.

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preprint2013arXiv

Radiative topological states in resonant photonic crystals

We present a theory of topological edge states in one-dimensional resonant photonic crystals with a compound unit cell. Contrary to the traditional electronic topological states the states under consideration are radiative, i.e., they decay in time due to the light escape through the structure boundaries. We demonstrate that the states survive despite their radiative decay and can be detected both in time- and frequency-dependent light reflection.

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preprint2013arXiv

Spin-dependent inter- and intra-valley electron-phonon scattering in germanium

We investigate the spin-dependent electron-phonon scatterings of the $L$ and $Γ$ valleys and the band structure near the conduction band minima in germanium. We first construct a $16\times16$ ${\bm k}\cdot{\bm p}$ Hamiltonian in the vicinity of the $L$ point in germanium, which ensures the correctness of the band structure of the lowest three conduction bands and highest two valence bands. This Hamiltonian facilitates the analysis of the spin-related properties of the conduction electrons. We then demonstrate the phonon-induced electron scatterings of the $L$ and $Γ$ valleys, i.e., the intra-$Γ$/ $L$ valley, inter--$Γ$-$L$ valley and inter--$L$-$L$ valley scatterings in germanium. The selection rules and complete scattering matrices for these scatterings are calculated, where the scattering matrices for the intra-$Γ$ valley scattering, inter--$Γ$-$L$ valley scattering and the optical-phonon and the separated transverse-acoustic- and longitudinal-acoustic-phonon contributions to the intra-$Γ$ valley scattering have not been reported in the literature. The coefficients in these scattering matrices are obtained via the pseudo-potential calculation, which also verifies our selection rules and wave-vector dependence. We further discuss the Elliott-Yafet mechanisms in these electron-phonon scatterings with the ${\bm k}$$\cdot$${\bm p}$ eigenstates at the $L$ and $Γ$ valleys. Our investigation of these electron-phonon scatterings are essential for the study of the optical orientation of spin and hot-electron relaxation in germanium.

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preprint2013arXiv

Spin-dependent phenomena in semiconductors in strong electric fields

We develop a theory of spin-dependent phenomena in the streaming regime characterized by ballistic acceleration of electrons in the moderate electric field until they achieve the optical phonon energy and abruptly emit the phonons. It is shown that the Dyakonov-Perel spin relaxation is drastically modified in this regime, the current-induced spin orientation remarkably increases, reaches a high value ~2% in the electric field ~1kV/cm and falls with the further increase in the field. The spin polarization enhancement is caused by squeezing of the electron momentum distribution in the direction of drift. We also predict field-induced oscillatory dynamics of spin polarization of the photocarriers excited into the conduction band by a short circularly-polarized optical pulse.

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preprint2013arXiv

Spin-orbit splitting of valence subbands in semiconductor nanostructures

We propose the 14-band $\mathbf k \cdot \mathbf p$ model to calculate spin-orbit splittings of the valence subbands in semiconductor quantum wells. The reduced symmetry of quantum well interfaces is incorporated by means of additional terms in the boundary conditions which mix the $Γ_{15}$ conduction and valence Bloch functions at the interfaces. It is demonstrated that the interface-induced effect makes the dominating contribution to the heavy-hole spin splitting. A simple analytical expression for the interface contribution is derived. In contrast to the 4$\times$4 effective Hamiltonian model, where the problem of treating the $V_z k_z^3$ term seems to be unsolvable, the 14-band model naturally avoids and overcomes this problem. Our results are in agreement with the recent atomistic calculations [J.-W. Luo et al., Phys. Rev. Lett. {\bf 104}, 066405 (2010)].

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preprint2012arXiv

Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

We present a microscopic theory of the magnetic field induced mixing of heavy-hole states +/- 3/2 in GaAs droplet dots grown on (111)A substrates. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowance for the triangularity of the confining potential. They are in quantitative agreement with the experimentally observed polarization selection rules, emission line intensities and energy splittings in both longitudinal and transverse magnetic fields for neutral and charged excitons in all measured single dots.

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preprint2012arXiv

Ratchet effects in two-dimensional systems with a lateral periodic potential

Radiation-induced ratchet electric currents have been studied theoretically in graphene with a periodic noncentrosymmetric lateral potential. The ratchet current generated under normal incidence is shown to consist of two contributions, one of them being polarization-independent and proportional to the energy relaxation time, and another controlled solely by elastic scattering processes and sensitive to both the linear and circular polarization of radiation. Two realistic mechanisms of electron scattering in graphene are considered. For short-range defects, the ratchet current is helicity-dependent but independent of the direction of linear polarization. For the Coulomb impurity scattering, the ratchet current is forbidden for the radiation linearly polarized in the plane perpendicular to the lateral-potential modulation direction. For comparison, the ratchet currents in a quantum well with a lateral superlattice are calculated at low temperatures with allowance for the dependence of the momentum relaxation time on the electron energy.

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preprint2012arXiv

Spin noise in quantum dot ensembles

We study theoretically spin fluctuations of resident electrons or holes in singly charged quantum dots. The effects of external magnetic field and effective fields caused by the interaction of electron and nuclei spins are analyzed. The fluctuations of spin Faraday, Kerr and ellipticity signals revealing the spin noise of resident charge carriers are calculated for the continuous wave probing at the singlet trion resonance.

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preprint2011arXiv

Classical ratchet effects in heterostructures with a lateral periodic potential

We study terahertz radiation induced ratchet currents in low dimensional semiconductor structures with a superimposed one-dimensional lateral periodic potential. The periodic potential is produced by etching a grating into the sample surface or depositing metal stripes periodically on the sample top. Microscopically, the photocurrent generation is based on the combined action of the lateral periodic potential, verified by transport measurements, and the in-plane modulated pumping caused by the lateral superlattice. We show that a substantial part of the total current is caused by the polarization-independent Seebeck ratchet effect. In addition, polarization-dependent photocurrents occur, which we interpret in terms of their underlying microscopical mechanisms. As a result, the class of ratchet systems needs to be extended by linear and circular ratchets, sensitive to linear and circular polarizations of the driving electro-magnetic force.

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preprint2011arXiv

Dark-bright mixing of interband transitions in symmetric semiconductor quantum dots

In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis we observe in addition to the expected bright states also nominally dark transitions for both charged and neutral excitons. We uncover a strongly non-monotonous, sign changing field dependence of the bright neutral exciton splitting resulting from the interplay between exchange and Zeeman effects. Our theory shows quantitatively that these surprising experimental results are due to magnetic-field-induced \pm 3/2 heavy-hole mixing, an inherent property of systems with C_3v point-group symmetry.

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preprint2011arXiv

Giant Zeeman splitting of light holes in GaAs/AlGaAs quantum wells

We have developed a theory of the longitudinal $g$ factor of light holes in semiconductor quantum wells. It is shown that the absolute value of the light-hole $g$-factor can strongly exceed its value in the bulk and, moreover, the dependence of the Zeeman splitting on magnetic field becomes non-linear in relatively low fields. These effects are determined by the proximity of the ground light-hole subband, $lh1$, to the first excited heavy-hole subband, $hh2$, in GaAs/AlGaAs-type structures. The particular calculations are performed in the framework of Luttinger Hamiltonian taking into account both the magnetic field-induced mixing of $lh1$ and $hh2$ states and the mixing of these states at heterointerfaces, the latter caused by chemical bonds anisotropy. A theory of magneto-induced reflection and transmission of light through the quantum wells for the light-hole-to-electron absorption edge is also presented.

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preprint2011arXiv

Purcell effect in small metallic cavities

We have studied theoretically the Purcell factor which characterizes a change in the emission rate of an electric or magnetic dipole embedded in the center of a spherical cavity. The main attention is paid to the analysis of cavities with radii small compared to the wavelength. It is shown that the Purcell factor in small metallic cavities varies in a wide range depending on the ratio of the cavity size to the skin depth.

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preprint2011arXiv

Spin orientation by electric current in (110) quantum wells

We develop a theory of spin orientation by electric current in (110)-grown semiconductor quantum wells. The controversy in the factor of two from two existed approaches is resolved by pointing out the importance of energy relaxation in this problem. The limiting cases of fast and slow energy relaxation relative to spin relaxation are considered for asymmetric (110) quantum wells. For symmetricly-doped structures the effect of spin orientation is shown to exist due to spatial fluctuations of the Rashba spin-orbit splitting. We demonstrate that the spin orientation depends strongly on the correlation length of these fluctuations as well as on the ratio of the energy and spin relaxation rates. The time-resolved kinetics of spin polarization by electric current is also governed by the correlation length being not purely exponential at slow energy relaxation. Electrical spin orientation in two-dimensional topological insulators is calculated and compared with the spin polarization induced by the magnetic field.

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preprint2011arXiv

Terahertz radiation driven chiral edge currents in graphene

We observe photocurrents induced in single layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left- to right-handed. We demonstrate that the photocurrent stems from the sample edges, which reduce the spatial symmetry and result in an asymmetric scattering of carriers driven by the radiation electric field. The developed theory is in a good agreement with the experiment. We show that the edge photocurrents can be applied for determination of the conductivity type and the momentum scattering time of the charge carriers in the graphene edge vicinity.

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preprint2010arXiv

Circular ac Hall Effect

We report the observation of the circular ac Hall effect where the current is solely driven by the crossed ac electric and magnetic fields of circularly polarized radiation. Illuminating an unbiased monolayer sheet of graphene with circularly polarized terahertz radiation at room temperature generates - under oblique incidence - an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. Alike the classical dc Hall effect, the voltage is caused by crossed electric and magnetic fields which are however rotating with the light's frequency.

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preprint2010arXiv

Optical orientation and spin-dependent recombination in GaAsN alloys under continuous-wave pumping

We present a systematic theoretical study of spin-dependent recombination and its effect on optical orientation of photoelectron spins in semiconductors with deep paramagnetic centers. For this aim we generalize the Shockley-Read theory of recombination of electrons and holes through the deep centers with allowance for optically-induced spin polarization of free and bound electrons. Starting from consideration of defects with three charge states we turn to the two-charge-state model possessing nine parameters and show that it is compatible with available experimental data on undoped GaAsN alloys. In the weak- and strong-pumping limits, we derive simple analytic equations which are useful in prediction and interpretation of experimental results. Experimental and theoretical dependencies of the spin-dependent-recombination ratio and degree of photoluminescence circular polarization on the pumping intensity and the transverse magnetic field are compared and discussed.

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preprint2010arXiv

Photon helicity driven electric currents in graphene

We report on the observation of photon helicity driven currents in graphene. The directed net electric current is generated in single layer graphene by circularly polarized terahertz laser radiation at normal as well as at oblique incidence and changes its sign upon reversing the radiation helicity. The phenomenological and microscopic theories of the observed photocurrents are developed. We demonstrate that under oblique incidence the current is caused by the circular photon drag effect in the interior of graphene sheet. By contrast, the effect at normal incidence stems from the sample edges, which reduce the symmetry and result in an asymmetric scattering of carriers driven by the radiation field. Besides a photon helicity dependent current we also observe photocurrents in response to linearly polarized radiation. The microscopic mechanisms governing this effect are discussed.

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preprint2010arXiv

Valley-Orbit Photocurrents in (111)-oriented Si-MOSFETs

We demonstrate the injection of pure valley-orbit currents in multi-valley semiconductors and present the theory of this effect. We studied photo-induced transport in $n$-doped (111)-oriented silicon metal-oxide-semiconductor field effect transistors at room temperature. By shining circularly polarized light on exact oriented structures with six equivalent valleys, non-zero electron fluxes within each valley are generated, which compensate each other and do not yield a net electric current. By disturbing the balance between the valley fluxes, in this work by applying linearly polarized radiation as well as by introducing a nonequivalence of the valleys by disorientation, we approve that the pure valley currents can be converted into a measurable electric current.

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preprint2009arXiv

Nonlinear magneto-gyrotropic photogalvanic effect

We report on the observation of nonlinear magneto-gyrotropic photogalvanic effect in HgTe/HgCdTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the heterostructures is shown to cause a dc electric current in the presence of an in-plane magnetic field. A cubic in magnetic field component of the photocurrent is observed in quantum wells with the inverted band structure only. The experimental data are discussed in terms of both the phenomenological theory and microscopic models.

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preprint2009arXiv

Resonant Photonic Quasicrystalline and Aperiodic Structures

We have theoretically studied propagation of exciton-polaritons in deterministic aperiodic multiple-quantum-well structures, particularly, in the Fibonacci and Thue-Morse chains. The attention is concentrated on the structures tuned to the resonant Bragg condition with two-dimensional quantum-well exciton. The superradiant or photonic-quasicrystal regimes are realized in these structures depending on the number of the wells. The developed theory based on the two-wave approximation allows one to describe analytically the exact transfer-matrix computations for transmittance and reflectance spectra in the whole frequency range except for a narrow region near the exciton resonance. In this region the optical spectra and the exciton-polariton dispersion demonstrate scaling invariance and self-similarity which can be interpreted in terms of the ``band-edge'' cycle of the trace map, in the case of Fibonacci structures, and in terms of zero reflection frequencies, in the case of Thue-Morse structures.

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preprint2008arXiv

Ratchet effects induced by terahertz radiation in heterostructures with a lateral periodic potential

We report on the observation of terahertz radiation induced photogalvanic currents in semiconductor heterostructures with one-dimensional lateral periodic potential. The potential is produced by etching a grating into the sample surface. The electric current response is well described by phenomenological theory including both the circular and linear photogalvanic effects. Experimental data demonstrate that the inversion asymmetry of the periodic lateral pattern can be varied by means of electron beam lithography to produce classical lateral ratchets. A novel microscopical mechanism for the polarization-dependent photogalvanic effects has been proposed to interpret the experimental findings. The photocurrent generation is based on the combined action of the lateral periodic potential and the modulated in-plane pumping. The latter modulation stems from near-field effects of the radiation propagating through the grating.

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preprint2006arXiv

Enhanced spin relaxation time due to electron-electron scattering in semiconductors

We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlGaAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques were applied in order to study in detail the temperature-, concentration- and quantum-well-width- dependencies of the spin relaxation rate of a small photoexcited electron population. A rapid enhancement of the spin life-time with temperature up to a maximum near the Fermi temperature of the 2DEG was demonstrated experimentally. These observations are consistent with the D'yakonov-Perel' spin relaxation mechanism controlled by electron-electron collisions. The experimental results and theoretical predictions for the spin relaxation times are in good quantitative agreement.

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preprint2006arXiv

Pure spin currents induced by spin-dependent scattering processes in SiGe quantum well structures

We show that spin-dependent electron-phonon interaction in the energy relaxation of a two-dimensional electron gas results in equal and oppositely directed currents in the spin-up and spin-down subbands yielding a pure spin current. In our experiments on SiGe heterostructures the pure spin current is converted into an electric current applying a magnetic field that lifts the cancellation of the two partial charge flows. A microscopic theory of this effect, taking account of the asymmetry of the relaxation process, is developed being in a good agreement with the experimental data.

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preprint2006arXiv

Spin-dependent electron dynamics and recombination in GaAs(1-x)N(x) alloys at room temperature

We report on both experimental and theoretical study of conduction-electron spin polarization dynamics achieved by pulsed optical pumping at room temperature in GaAs(1-x)N(x) alloys with a small nitrogen content (x = 2.1, 2.7, 3.4%). It is found that the photoluminescence circular polarization determined by the mean spin of free electrons reaches 40-45% and this giant value persists within 2 ns. Simultaneously, the total free-electron spin decays rapidly with the characteristic time ~150 ps. The results are explained by spin-dependent capture of free conduction electrons on deep paramagnetic centers resulting in dynamical polarization of bound electrons. We have developed a nonlinear theory of spin dynamics in the coupled system of spin-polarized free and localized carriers which describes the experimental dependencies, in particular, electron spin quantum beats observed in a transverse magnetic field.

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preprint2003arXiv

Spin Splitting in Symmetrical SiGe Quantum Wells

Spin splitting of conduction electron states has been analyzed for all possible point symmetries of SiGe quantum well structures. A particular attention is paid to removal of spin degeneracy caused by the rotoinversion asymmetry of a (001) heterointerface between two diamond-lattice materials. The asymmetry is shown to result in spin splitting of both Rashba and Dresselhaus types in symmetrical SiGe quantum wells. Consequences of the spin splitting on spin relaxation are discussed.

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