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Source author record

Kyle L. Seyler

Kyle L. Seyler appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.optics

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Published work

7 published item(s)

preprint2020arXiv

Layer-Resolved Magnetic Proximity Effect in van der Waals Heterostructures

Magnetic proximity effects are crucial ingredients for engineering spintronic, superconducting, and topological phenomena in heterostructures. Such effects are highly sensitive to the interfacial electronic properties, such as electron wave function overlap and band alignment. The recent emergence of van der Waals (vdW) magnets enables the possibility of tuning proximity effects via designing heterostructures with atomically clean interfaces. In particular, atomically thin CrI3 exhibits layered antiferromagnetism, where adjacent ferromagnetic monolayers are antiferromagnetically coupled. Exploiting this magnetic structure, we uncovered a layer-resolved magnetic proximity effect in heterostructures formed by monolayer WSe2 and bi/trilayer CrI3. By controlling the individual layer magnetization in CrI3 with a magnetic field, we found that the spin-dependent charge transfer between WSe2 and CrI3 is dominated by the interfacial CrI3 layer, while the proximity exchange field is highly sensitive to the layered magnetic structure as a whole. These properties enabled us to use monolayer WSe2 as a spatially sensitive magnetic sensor to map out layered antiferromagnetic domain structures at zero magnetic field as well as antiferromagnetic/ferromagnetic domains near the spin-flip transition in bilayer CrI3. Our work reveals a new way to control proximity effects and probe interfacial magnetic order via vdW engineering.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Band parameters and hybridization in 2D semiconductor heterostructures from photoemission spectroscopy

Combining monolayers of different two-dimensional (2D) semiconductors into heterostructures opens up a wealth of possibilities for novel electronic and optical functionalities. Exploiting them hinges on accurate measurements of the band parameters and orbital hybridization in separate and stacked monolayers, many of which are only available as small samples. The recently introduced technique of angle-resolved photoemission spectroscopy with submicron spatial resolution (μ-ARPES) offers the capability to measure small samples, but the energy resolution obtained for such exfoliated samples to date (~0.5 eV) has been inadequate. Here, we show that by suitable heterostructure sample design the full potential of μ-ARPES can be realized. We focus on MoSe2/WSe2 van der Waals heterostructures, which are 2D analogs of 3D semiconductor heterostructures. We find that in a MoSe2/WSe2 heterobilayer the bands in the K valleys are weakly hybridized, with the conduction and valence band edges originating in the MoSe2 and WSe2 respectively. There is stronger hybridization at the Γ point, but the valence band edge remains at the K points. This is consistent with the recent observation of interlayer excitons where the electron and hole are valley polarized but in opposite layers. We determine the valence band offset to be 300 meV, which combined with photoluminescence measurements implies that the binding energy of interlayer excitons is at least 200 meV, comparable with that of intralayer excitons.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Directional Interlayer Spin-Valley Transfer in Two-Dimensional Heterostructures

Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. Here, we report the direct observation that an optically generated spin-valley polarization in one monolayer can be transferred between layers of a two-dimensional MoSe2-WSe2 heterostructure. Using nondegenerate optical circular dichroism spectroscopy, we show that charge transfer between two monolayers conserves spin-valley polarization and is only weakly dependent on the twist angle between layers. Our work points to a new spin-valley pumping scheme in nanoscale devices, provides a fundamental understanding of spin-valley transfer across the two-dimensional interface, and shows the potential use of two-dimensional semiconductors as a spin-valley generator in 2D spin/valleytronic devices for storing and processing information.

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preprint2016arXiv

Expansion of a Valley-Polarized Exciton Cloud in a 2D Heterostructure

Heterostructures comprising different monolayer semiconductors provide a new system for fundamental science and device technologies, such as in the emerging field of valleytronics. Here, we realize valley-specific interlayer excitons in monolayer WSe2-MoSe2 vertical heterostructures. We create interlayer exciton spin-valley polarization by circularly polarized optical pumping and determine a valley lifetime of 40 nanoseconds. This long-lived polarization enables the visualization of the expansion of a valley-polarized exciton cloud over several microns. The spatial pattern of the polarization evolves into a ring with increasing exciton density, a manifestation of valley exciton exchange interactions. Our work lays a foundation for quantum optoelectronics and valleytronics based on interlayer excitons in van der Waals heterostructures.

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preprint2016arXiv

Silicon photonic crystal cavity enhanced second-harmonic generation from monolayer WSe2

Nano-resonator integrated with two-dimensional materials (e.g. transition metal dichalcogenides) have recently emerged as a promising nano-optoelectronic platform. Here we demonstrate resonatorenhanced second-harmonic generation (SHG) in tungsten diselenide using a silicon photonic crystal cavity. By pumping the device with the ultrafast laser pulses near the cavity mode at the telecommunication wavelength, we observe a near visible SHG with a narrow linewidth and near unity linear polarization, originated from the coupling of the pump photon to the cavity mode. The observed SHG is enhanced by factor of ~200 compared to a bare monolayer on silicon. Our results imply the efficacy of cavity integrated monolayer materials for nonlinear optics and the potential of building a silicon-compatible second-order nonlinear integrated photonic platform.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electrical Control of Second-Harmonic Generation in a WSe2 Monolayer Transistor

Nonlinear optical frequency conversion, in which optical fields interact with a nonlinear medium to produce new field frequencies, is ubiquitous in modern photonic systems. However, the nonlinear electric susceptibilities that give rise to such phenomena are often challenging to tune in a given material, and so far, dynamical control of optical nonlinearities remains confined to research labs as a spectroscopic tool. Here, we report a mechanism to electrically control second-order optical nonlinearities in monolayer WSe2, an atomically thin semiconductor. We show that the intensity of second-harmonic generation at the A-exciton resonance is tunable by over an order of magnitude at low temperature and nearly a factor of 4 at room temperature through electrostatic doping in a field-effect transistor. Such tunability arises from the strong exciton charging effects in monolayer semiconductors, which allow for exceptional control over the oscillator strengths at the exciton and trion resonances. The exciton-enhanced second-harmonic generation is counter-circularly polarized to the excitation laser, arising from the combination of the two-photon and one-photon valley selection rules that have opposite helicity in the monolayer. Our study paves the way towards a new platform for chip-scale, electrically tunable nonlinear optical devices based on two-dimensional semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Highly Anisotropic and Robust Excitons in Monolayer Black Phosphorus

Semi-metallic graphene and semiconducting monolayer transition metal dichalcogenides (TMDCs) are the two-dimensional (2D) materials most intensively studied in recent years. Recently, black phosphorus emerged as a promising new 2D material due to its widely tunable and direct bandgap, high carrier mobility and remarkable in-plane anisotropic electrical, optical and phonon properties. However, current progress is primarily limited to its thin-film form, and its unique properties at the truly 2D quantum confinement have yet to be demonstrated. Here, we reveal highly anisotropic and tightly bound excitons in monolayer black phosphorus using polarization-resolved photoluminescence measurements at room temperature. We show that regardless of the excitation laser polarization, the emitted light from the monolayer is linearly polarized along the light effective mass direction and centers around 1.3 eV, a clear signature of emission from highly anisotropic bright excitons. In addition, photoluminescence excitation spectroscopy suggests a quasiparticle bandgap of 2.2 eV, from which we estimate an exciton binding energy of around 0.9 eV, consistent with theoretical results based on first-principles. The experimental observation of highly anisotropic, bright excitons with exceedingly large binding energy not only opens avenues for the future explorations of many-electron effects in this unusual 2D material, but also suggests a promising future in optoelectronic devices such as on-chip infrared light sources.

0 citations0 reviewsNo code linkedOpen access