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Kun Zhai

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Published work

5 published item(s)

preprint2026arXiv

BackdoorAgent: A Unified Framework for Backdoor Attacks on LLM-based Agents

Large language model (LLM) agents execute tasks through multi-step workflows that combine planning, memory, and tool use. While this design enables autonomy, it also expands the attack surface for backdoor threats. Backdoor triggers injected into specific stages of an agent workflow can persist through multiple intermediate states and adversely influence downstream outputs. However, existing studies remain fragmented and typically analyze individual attack vectors in isolation, leaving the cross-stage interaction and propagation of backdoor triggers poorly understood from an agent-centric perspective. To fill this gap, we propose \textbf{BackdoorAgent}, a modular and stage-aware framework that provides a unified, agent-centric view of backdoor threats in LLM agents. BackdoorAgent structures the attack surface into three functional stages of agentic workflows, including \textbf{planning attacks}, \textbf{memory attacks}, and \textbf{tool-use attacks}, and instruments agent execution to enable systematic analysis of trigger activation and propagation across different stages. Building on this framework, we construct a standardized benchmark spanning four representative agent applications: \textbf{Agent QA}, \textbf{Agent Code}, \textbf{Agent Web}, and \textbf{Agent Drive}, covering both language-only and multimodal settings. Our empirical analysis shows that \textit{triggers implanted at a single stage can persist across multiple steps and propagate through intermediate states.} For instance, when using a GPT-based backbone, we observe trigger persistence in 43.58\% of planning attacks, 77.97\% of memory attacks, and 60.28\% of tool-stage attacks, highlighting the vulnerabilities of the agentic workflow itself to backdoor threats. To facilitate reproducibility and future research, our code and benchmark are publicly available at GitHub.

preprint2021arXiv

Reentrance of spin-driven ferroelectricity through rotational tunneling of ammonium

Quantum effects fundamentally engender exotic physical phenomena in macroscopic systems, which advance next-generation technological applications. Rotational tunneling that represents the quantum phenomenon of the librational motion of molecules is ubiquitous in hydrogen-contained materials. However, its direct manifestation in realizing macroscopic physical properties is elusive. Here we report an observation of reentrant ferroelectricity under low pressure that is mediated by the rotational tunneling of ammonium ions in molecule-based (NH$_4$)$_2$FeCl$_5 \cdot$H$_2$O. Applying a small pressure leads to a transition from spin-driven ferroelectricity to paraelectricity coinciding with the stabilization of a collinear magnetic phase. Such a transition is attributed to the hydrogen bond fluctuations via the rotational tunneling of ammonium groups as supported by theoretical calculations. Higher pressure lifts the quantum fluctuations and leads to a reentrant ferroelectric phase concomitant with another incommensurate magnetic phase. These results demonstrate that the rotational tunneling emerges as a new route to control magnetic-related properties in soft magnets, opening avenues for designing multi-functional materials and realizing potential quantum control.

preprint2016arXiv

A multilevel nonvolatile magnetoelectric memory based on memtranstor

The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple states of the magnetoelectric coefficient (α) of multiferroics. Because the states of α depends on the relative orientation between magnetization and polarization, one can reach different levels of α by controlling the ratio of up and down ferroelectric domains with external electric fields. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure confirm that the states of α can be well controlled between positive and negative by applying selective electric fields. Consequently, two-level, four-level, and eight-level nonvolatile memory devices are demonstrated at room temperature. This kind of multilevel magnetoelectric memory retains all the advantages of ferroelectric random access memory but overcomes the drawback of destructive reading of polarization. In contrast, the reading of α is nondestructive and highly efficient in a parallel way, with an independent reading coil shared by all the memory cells.

preprint2016arXiv

A non-volatile memory based on nonlinear magnetoelectric effects

The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a butterfly-shaped hysteresis loop. The principle is to utilize the states of the magnetoelectric coefficient, instead of magnetization, electric polarization or resistance, to store binary information. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure clearly demonstrate that the sign of the magnetoelectric coefficient can be repeatedly switched between positive and negative by applying electric fields, confirming the feasibility of this principle. This kind of non-volatile memory has outstanding practical virtues such as simple structure, easy operations in writing and reading, low power, fast speed, and diverse materials available.

preprint2016arXiv

Electromagnon in the Z-type hexaferrite $({\rm Ba}_{x}{\rm Sr}_{1-x})_3\rm Co_2Fe_{24}O_{41}$

We studied experimentally the high-temperature magnetoelectric $({\rm Ba}_{x}{\rm Sr}_{1-x})_3\rm Co_2Fe_{24}O_{41}$ prepared as ceramics (x = 0, 0.2) and a single crystal (x = 0.5) using inelastic neutron scattering, THz time-domain, Raman and far-infrared spectroscopies. The spectra, measured with varying temperature and magnetic field, reveal rich information about the collective spin and lattice excitations. In the ceramics, we observed an infrared-active magnon which is absent in $E^ω\perp z$ polarized THz spectra of the crystal, and we assume that it is an electromagnon active in $E^ω \| z$ polarized spectra. On heating from 7 to 250 K, the frequency of this electromagnon drops from 36 to 25 cm$^{-1}$ and its damping gradually increases, so it becomes overdamped at room temperature. Applying external magnetic field has a similar effect on the damping and frequency of the electromagnon, and the mode is no more observable in the THz spectra above 2 T, as the transverse-conical magnetic structure transforms into a collinear one. Raman spectra reveal another spin excitation with a slightly different frequency and much higher damping. Upon applying magnetic field higher than 3 T, in the low-frequency part of the THz spectra, a narrow excitation appears whose frequency linearly increases with magnetic field. We interpret this feature as the ferromagnetic resonance.