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Kuan-Hao Chen

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cond-mat.mtrl-sci Information Theory Machine Learning

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preprint2026arXiv

Dueling DDQN-Based Adaptive Multi-Objective Handover Optimization for LEO Satellite Networks

In this paper, we propose a dueling double deep Q-network (DDQN)-based adaptive multi-objective handover framework for low Earth orbit (LEO) satellite networks. The proposed method enables dynamic trade-off learning among throughput, blocking probability, and switching cost under time-varying network conditions. Simulation results demonstrate that the proposed approach consistently outperforms conventional baselines, achieving up to 10.3% throughput improvement and near-zero blocking under typical operating conditions.

preprint2022arXiv

Toward 100% Spin-Orbit Torque Efficiency with High Spin-Orbital Hall Conductivity Pt-Cr Alloys

5d transition metal Pt is the canonical spin Hall material for efficient generation of spin-orbit torques (SOTs) in Pt/ferromagnetic layer (FM) heterostructures. However, for a long while with tremendous engineering endeavors, the damping-like SOT efficiencies ( $ξ_{DL}$ ) of Pt and Pt alloys have still been limited to $ξ_{DL}$ <0.5. Here we present that with proper alloying elements, particularly 3d transition metals V and Cr, a high spin-orbital Hall conductivity ( $σ_{SH}{\sim}6.5{\times}10^{5}({\hbar}/2e)Ω^{-1}{\cdot} m^{-1}$ ) can be developed. Especially for the Cr-doped case, an extremely high $ξ_{DL}{\sim}0.9$ in a Pt $_{0.69}$ Cr $_{0.31}$ /Co device can be achieved with a moderate Pt $_{0.69}$ Cr $_{0.31}$ resistivity of $ρ_{xx}{\sim}133 μΩ{\cdot}cm$ . A low critical SOT-driven switching current density of $J_{c}{\sim}3.2{\times}10^{6} A{\cdot}cm^{-2}$ is also demonstrated. The damping constant ( $α$ ) of Pt $_{0.69}$ Cr $_{0.31}$ /FM structure is also found to be reduced to 0.052 from the pure Pt/FM case of 0.078. The overall high $σ_{SH}$ , giant $ξ_{DL}$ , moderate $ρ_{xx}$ , and reduced $α$ of such a Pt-Cr/FM heterostructure makes it promising for versatile extremely low power consumption SOT memory applications.

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