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Cheng-Wei Peng

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2022arXiv

Toward 100% Spin-Orbit Torque Efficiency with High Spin-Orbital Hall Conductivity Pt-Cr Alloys

5d transition metal Pt is the canonical spin Hall material for efficient generation of spin-orbit torques (SOTs) in Pt/ferromagnetic layer (FM) heterostructures. However, for a long while with tremendous engineering endeavors, the damping-like SOT efficiencies ( $ξ_{DL}$ ) of Pt and Pt alloys have still been limited to $ξ_{DL}$ <0.5. Here we present that with proper alloying elements, particularly 3d transition metals V and Cr, a high spin-orbital Hall conductivity ( $σ_{SH}{\sim}6.5{\times}10^{5}({\hbar}/2e)Ω^{-1}{\cdot} m^{-1}$ ) can be developed. Especially for the Cr-doped case, an extremely high $ξ_{DL}{\sim}0.9$ in a Pt $_{0.69}$ Cr $_{0.31}$ /Co device can be achieved with a moderate Pt $_{0.69}$ Cr $_{0.31}$ resistivity of $ρ_{xx}{\sim}133 μΩ{\cdot}cm$ . A low critical SOT-driven switching current density of $J_{c}{\sim}3.2{\times}10^{6} A{\cdot}cm^{-2}$ is also demonstrated. The damping constant ( $α$ ) of Pt $_{0.69}$ Cr $_{0.31}$ /FM structure is also found to be reduced to 0.052 from the pure Pt/FM case of 0.078. The overall high $σ_{SH}$ , giant $ξ_{DL}$ , moderate $ρ_{xx}$ , and reduced $α$ of such a Pt-Cr/FM heterostructure makes it promising for versatile extremely low power consumption SOT memory applications.

preprint2020arXiv

Efficient Spin-Orbit Torque Switching with Non-Epitaxial Chalcogenide Heterostructures

The spin-orbit torques (SOTs) generated from topological insulators (TIs) have gained increasing attention in recent years. These TIs, which are typically formed by epitaxially grown chalcogenides, possess extremely high SOT efficiencies and have great potential to be employed in the next-generation spintronics devices. However, epitaxy of these chalcogenides is required to ensure the existence of topologically-protected surface state (TSS), which limits the feasibility of using these materials in industry. In this work, we show that non-epitaxial Bi $_{x}$ Te $_{1-x}$ /ferromagnet heterostructures prepared by conventional magnetron sputtering possess giant SOT efficiencies even without TSS. Through harmonic voltage measurement and hysteresis loop shift measurement, we find that the damping-like SOT efficiencies originated from the bulk spin-orbit interactions of such non-epitaxial heterostructures can reach values greater than 100% at room temperature. We further demonstrate current-induced SOT switching in these Bi $_{x}$ Te $_{1-x}$ -based heterostructures with thermally stable ferromagnetic layers, which indicates that such non-epitaxial chalcogenide materials can be potential efficient SOT sources in future SOT magnetic memory devices.

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