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Researcher profile

Kosuke Takiguchi

Kosuke Takiguchi contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph

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Published work

3 published item(s)

preprint2022arXiv

Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect

According to Onsager&#39;s principle, electrical resistance $R$ of general conductors behaves as an even function of external magnetic field $B$. Only in special circumstances, which involve time reversal symmetry (TRS) broken by ferromagnetism, the odd component of $R$ against $B$ is observed. This unusual phenomenon, called odd-parity magnetoresistance (OMR), was hitherto subtle (< 2%) and hard to control by external means. Here, we report a giant OMR as large as 27% in edge transport channels of an InAs quantum well, which is magnetized by a proximity effect from an underlying ferromagnetic semiconductor (Ga,Fe)Sb layer. Combining experimental results and theoretical analysis using the linearized Boltzmann&#39;s equation, we found that simultaneous breaking of both the TRS by the magnetic proximity effect (MPE) and spatial inversion symmetry (SIS) in the one-dimensional (1D) InAs edge channels is the origin of this giant OMR. We also demonstrated the ability to turn on and off the OMR using electrical gating of either TRS or SIS in the edge channels. These findings provide a deep insight into the 1D semiconducting system with a strong magnetic coupling.

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preprint2021arXiv

Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures

The magnetic proximity effect (MPE), ferromagnetic coupling at the interface of magnetically dissimilar layers, attracts much attention as a promising pathway for introducing ferromagnetism into a high-mobility non-magnetic conducting channel. Recently, our group found giant proximity magnetoresistance (PMR), which is caused by MPE at an interface between a non-magnetic semiconductor InAs quantum well (QW) layer and a ferromagnetic semiconductor (Ga,Fe)Sb layer. The MPE in the non-magnetic semiconductor can be modulated by applying a gate voltage and controlling the penetration of the electron wavefunction in the InAs QW into the neighboring insulating ferromagnetic (Ga,Fe)Sb layer. However, optimal conditions to obtain strong MPE at the InAs/(Ga,Fe)Sb interface have not been clarified. In this paper, we systematically investigate the PMR properties of In1-xGaxAs (x = 0%, 5%, 7.5%, and 10%) / (Ga,Fe)Sb bilayer semiconductor heterostructures under a wide range of gate voltage. The inclusion of Ga alters the electronic structures of the InAs thin film, in particular changing the effective mass and the QW potential of electron carriers. Our experimental results and theoretical analysis of the PMR in these In1-xGaxAs/(Ga,Fe)Sb heterostructures show that the MPE depends not only on the degree of penetration of the electron wavefunction into (Ga,Fe)Sb but also on the electron density. These findings help us to unveil the microscopic mechanism of MPE in semiconductor-based non-magnetic/ferromagnetic heterojunctions.

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preprint2018arXiv

Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers

The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance (MR), such as giant magnetoresistance (GMR) and tunnelling magnetoresistance (TMR) in magnetic multilayers. Recently, new types of MR have been observed in much simpler bilayers consisting of ferromagnetic (FM)/nonmagnetic (NM) thin films; however, the magnitude of MR in these materials is very small (0.01 ~ 1%). Here, we demonstrate that NM/FM bilayers consisting of a NM InAs quantum well conductive channel and an insulating FM (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance (PMR) (~80% at 14 T). This PMR is two orders of magnitude larger than the MR observed in NM/FM bilayers reported to date, and its magnitude can be controlled by a gate voltage. These results are explained by the penetration of the InAs two-dimensional-electron wavefunction into (Ga,Fe)Sb. The ability to strongly modulate the NM channel current by both electrical and magnetic gating represents a new concept of magnetic-gating spin transistors.

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