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Researcher profile

Takahiro Chiba

Takahiro Chiba contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phmath.ACmath.CO

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Published work

11 published item(s)

preprint2025arXiv

Gain-driven magnon-polariton dynamics in the ultrastrong coupling regime: Effective circuit approach for coherence versus nonlinearity

We theoretically study the dynamics of gain-driven magnon-polaritons (MPs), which characterizes auto-oscillation of MPs, across the strong coupling (SC) and ultrastrong coupling (USC) regimes. Taking into account the magnon dynamics via the magnetic flux, we present an effective circuit model of gain-driven MPs, which allows to manipulate the coupling strength of MPs by tuning the size of a ferromagnet and incorporates the self-Kerr nonlinearity of magnons due to the shape magnetic anisotropy. In the SC regime, we find that the self-Kerr nonlinearity generates a frequency shift and reduces the coherent magnon-photon coupling. In contrast, in the USC regime, we find that the coherent magnon-photon coupling not only overcomes the self-Kerr nonlinearity but also effectively couples to gain via the imaginary part of complex eigenfrequencies, resulting in magnon-like auto-oscillations. Subsequently, the USC enables one to widely tune the auto-oscillation frequency by means of an external magnetic field. These findings indicate that there is a trade-off relation between the coupling strength of MPs and the self-Kerr nonlinearity of magnons. This work is attributed to understanding of the interplay between gain-loss and USC in nonlinear polariton dynamics, offering a novel principle for frequency tunable maser-like devices based on gain-driven MPs.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect

According to Onsager&#39;s principle, electrical resistance $R$ of general conductors behaves as an even function of external magnetic field $B$. Only in special circumstances, which involve time reversal symmetry (TRS) broken by ferromagnetism, the odd component of $R$ against $B$ is observed. This unusual phenomenon, called odd-parity magnetoresistance (OMR), was hitherto subtle (< 2%) and hard to control by external means. Here, we report a giant OMR as large as 27% in edge transport channels of an InAs quantum well, which is magnetized by a proximity effect from an underlying ferromagnetic semiconductor (Ga,Fe)Sb layer. Combining experimental results and theoretical analysis using the linearized Boltzmann&#39;s equation, we found that simultaneous breaking of both the TRS by the magnetic proximity effect (MPE) and spatial inversion symmetry (SIS) in the one-dimensional (1D) InAs edge channels is the origin of this giant OMR. We also demonstrated the ability to turn on and off the OMR using electrical gating of either TRS or SIS in the edge channels. These findings provide a deep insight into the 1D semiconducting system with a strong magnetic coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Thermoelectric refrigerator based on asymmetric surfaces of a magnetic topological insulator

Thermoelectric (TE) refrigeration such as Peltier cooler enables a unique opportunity in electric energy to directly convert thermal energy. Here, we propose a TE module with both refrigeration and power generation modes by utilizing asymmetric surfaces of a magnetic topological insulator (quantum anomalous Hall insulator) with a periodic array of hollows filled with two different dielectrics. Based on the Boltzmann transport theory, we show that its efficiency, i.e., the dimensionless figure of merit ZT exceeds 1 in the low-temperature regime below 300 K. The proposed device could be utilized as a heat management device that requires precise temperature control in small-scale cooling.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Voltage-driven Magnetization Switching via Dirac Magnetic Anisotropy and Spin--orbit Torque in Topological-insulator-based Magnetic Heterostructures

Electric-field control of magnetization dynamics is fundamentally and technologically important for future spintronic devices. Here, based on electric-field control of both magnetic anisotropy and spin--orbit torque, two distinct methods are presented for switching the magnetization in topological insulator (TI)/magnetic-TI hybrid systems. The magnetic anisotropy energy in magnetic TIs is formulated analytically as a function of the Fermi energy, and it is confirmed that the out-of-plane magnetization is always favored for the partially occupied surface band. Also proposed is a transistor-like device with the functionality of a nonvolatile magnetic memory that uses voltage-driven writing and the (quantum) anomalous Hall effect for readout. For the magnetization reversal, by using parameters of Cr-doped Bi_{1-x}Sb_{x})_{2}Te_{3}, the estimated source-drain current density and gate voltage are of the orders of $10^4$--$10^5$~A/cm$^2$ and 0.1~V, respectively, below 20~K and the writing requires no external magnetic field. Also discussed is the possibility of magnetization switching by the proposed method in TI/ferromagnetic-insulator bilayers with the magnetic proximity effect.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers

The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance (MR), such as giant magnetoresistance (GMR) and tunnelling magnetoresistance (TMR) in magnetic multilayers. Recently, new types of MR have been observed in much simpler bilayers consisting of ferromagnetic (FM)/nonmagnetic (NM) thin films; however, the magnitude of MR in these materials is very small (0.01 ~ 1%). Here, we demonstrate that NM/FM bilayers consisting of a NM InAs quantum well conductive channel and an insulating FM (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance (PMR) (~80% at 14 T). This PMR is two orders of magnitude larger than the MR observed in NM/FM bilayers reported to date, and its magnitude can be controlled by a gate voltage. These results are explained by the penetration of the InAs two-dimensional-electron wavefunction into (Ga,Fe)Sb. The ability to strongly modulate the NM channel current by both electrical and magnetic gating represents a new concept of magnetic-gating spin transistors.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Current-induced spin torque resonance of magnetic insulators affected by field-like spin-orbit torques and out-of-plane magnetizations

The spin-torque ferromagnetic resonance (ST-FMR) in a bilayer system consisting of a magnetic insulator such as Y3Fe5O12 and a normal metal with spin-orbit interaction such as Pt is addressed theoretically. We model the ST-FMR for all magnetization directions and in the presence of field-like spin-orbit torques based on the drift-diffusion spin model and quantum mechanical boundary conditions. ST-FMR experiments may expose crucial information about the spin-orbit coupling between currents and magnetization in the bilayers.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magnetization damping in noncollinear spin valves with antiferromagnetic interlayer couplings

We study the magnetic damping in the simplest of synthetic antiferromagnets, i.e. antiferromagnetically exchange-coupled spin valves in which applied magnetic fields tune the magnetic configuration to become noncollinear. We formulate the dynamic exchange of spin currents in a noncollinear texture based on the spindiffusion theory with quantum mechanical boundary conditions at the ferrromagnet|normal-metal interfaces and derive the Landau-Lifshitz-Gilbert equations coupled by the static interlayer non-local and the dynamic exchange interactions. We predict non-collinearity-induced additional damping that can be sensitively modulated by an applied magnetic field. The theoretical results compare favorably with published experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Current-induced spin torque resonance of a magnetic insulator

Pure spin currents transport angular momentum without an associated charge flow. This unique property makes them attractive for spintronics applications, such as torque induced magnetization control in nanodevices that can be used for sensing, data storage, interconnects and logics. Up to now, however, most spin transfer torque studies focused on metallic ferromagnets, while magnetic insulators were largely ignored, in spite of superior magnetic quality factors. Here, we report the observation of spin torque-induced magnetization dynamics in a magnetic insulator. Our experiments show that in ultrathin magnetic insulators the spin torque induced magnetization dynamics can be substantially larger than those generated by the Oersted field. This opens new perspectives for the efficient integration of ferro-, ferri-, and antiferromagnetic insulators into electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Current-induced spin torque resonance of magnetic insulators

We formulate a theory of the AC spin Hall magnetoresistance (SMR) in a bilayer system consisting of a magnetic insulator such as yttrium iron garnet (YIG) and a heavy metal such as platinum (Pt). We derive expressions for the DC voltage generation based on the drift-diffusion spin model and quantum mechanical boundary condition at the interface that reveal a spin torque ferromagnetic resonance (ST-FMR). We predict that ST-FMR experiments will reveal valuable information on the current-induced magnetization dynamics of magnetic insulators and AC spin Hall effect.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin torque transistor revisited

This paper reports on the improvement of the differential current gain in the spin-torque transistor based on two independent innovations, viz.the use of magnetic insulators and the spin Hall effect. Since, except for a few examples, spin transistors lack the current gain that is essential for many applications, spintronics and magnetic information technology lack an essential functionality compared to CMOS devices. Here, we show that negative differential resistance and large differential gain is possible in a large region of parameter space of the spin torque transistor. We also demonstrate that functionality is preserved when the control part is replaced by a normal metal film with a large spin Hall angle.

0 citations0 reviewsNo code linkedOpen access