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Komalavalli Thirunavukkuarasu

Komalavalli Thirunavukkuarasu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2019arXiv

Melting of charge order in the low-temperature state of an electronic ferroelectric

Strong electronic interactions can drive a system into a state with a symmetry breaking. Lattice frustration or competing interactions tend to prevent a symmetry breaking, leading to quantum disordered phases. In spin systems frustration can produce a spin liquid state. Frustration of a charge degree of freedom also can result in various exotic states, however, experimental data on these effects is scarce. In this work we demonstrate how a charge ordered ferroelectric looses the order on cooling to low temperatures using an example of a Mott insulator on a weakly anisotropic triangular lattice $κ$-(BEDT-TTF)$_2$Hg(SCN)$_2$Cl. Typically, a low temperature ordered state is a ground state of a system, and the demonstrated re-entrant behavior is unique. Raman scattering spectroscopy finds that this material enters an insulating ferroelectric `dipole solid' state at $T=30~K$, but below $T=15~K$ the order melts, while preserving the insulating energy gap. The resulting phase diagram is relevant to other quantum paraelectric materials.

preprint2015arXiv

High Photoresponsivity and Short Photo Response Times in Few-Layered WSe$_2$ Transistors

Here, we report the photoconducting response of field-effect transistors based on three atomic layers of chemical vapor transport grown WSe$_2$ crystals mechanically exfoliated onto SiO$_2$. We find that tri-layered WSe$_2$ field-effect transistors, built with the simplest possible architecture, can display high hole mobilities ranging from 350 cm$^2$/Vs at room temperature (saturating at a value of ~500 cm$^2$/Vs below 50 K) displaying a strong photocurrent response which leads to exceptionally high photo responsivities up to 7 A/W under white light illumination of the entire channel for power densities p < 10$^2$ W/m$^2$. Under a fixed wavelength of $λ$ = 532 nm and a laser spot size smaller than the conducting channel area we extract photo responsitivities approaching 100 mA/W with concomitantly high external quantum efficiencies up to ~ 40 % at room temperature. These values surpass values recently reported from more complex architectures, such as graphene and transition metal dichalcogenides based heterostructures. Also, tri-layered WSe$_2$ photo-transistors display photo response times in the order of 10 microseconds. Our results indicate that the addition of a few atomic layers considerably decreases the photo response times, probably by minimizing the interaction with the substrates, while maintaining a very high photo-responsivity.