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Frank Hohls

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Published work

12 published item(s)

preprint2022arXiv

Controlling the error mechanism in a tunable-barrier non-adiabatic charge pump by dynamic gate compensation

Single-electron pumps based on tunable-barrier quantum dots are the most promising candidates for a direct realization of the unit ampere in the recently revised SI: they are simple to operate and show high precision at high operation frequencies. The current understanding of the residual transfer errors at low temperature is based on the evaluation of backtunneling effects in the decay cascade model. This model predicts a strong dependence on the ratio of the time dependent changes in the quantum dot energy and the tunneling barrier transparency. Here we employ a two-gate operation scheme to verify this prediction and to demonstrate control of the backtunneling error. We derive and experimentally verify a quantitative prediction for the error suppression, thereby confirming the basic assumptions of the backtunneling (decay cascade) model. Furthermore, we demonstrate a controlled transition from the backtunneling dominated regime into the thermal (sudden decoupling) error regime. The suppression of transfer errors by several orders of magnitude at zero magnetic field was additionally verified by a sub-ppm precision measurement.

preprint2016arXiv

Dopant-controlled single-electron pumping through a metallic island

We investigate a hybrid metallic island / single dopant electron pump based on fully-depleted silicon on insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pumping is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations.

preprint2016arXiv

Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene

We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current and magnetic flux density. At low currents, an exponential decay of the 1/f noise power spectral density with increasing temperature is observed that indicates mesoscopic conductance fluctuations as the origin of 1/f noise at temperatures below 50 K. At higher currents, deviations from the typical quadratic current dependence and the exponential temperature dependence occur as a result of nonequilibrium conditions due to current heating. By applying the theory of Kubakaddi [S. S. Kubakaddi, Phys. Rev. B 79, 075417 (2009)], a model describing the 1/f noise power spectral density of nonequilibrium mesoscopic conductance fluctuations in epitaxial graphene is developed and used to determine the energy loss rate per carrier. In the regime of Shubnikov-de Haas oscillations a strong increase of 1/f noise is observed, which we attribute to an additional conductance fluctuation mechanism due to localized states in quantizing magnetic fields. When the device enters the regime of quantized Hall resistance, the 1/f noise vanishes. It reappears if the current is increased and the quantum Hall breakdown sets in.

preprint2015arXiv

Validation of a quantized-current source with 0.2 ppm uncertainty

We report on high-accuracy measurements of quantized current, sourced by a tunable-barrier single-electron pump at frequencies $f$ up to $1$ GHz. The measurements were performed with a new picoammeter instrument, traceable to the Josephson and quantum Hall effects. Current quantization according to $I=ef$ with $e$ the elementary charge was confirmed at $f=545$ MHz with a total relative uncertainty of 0.2 ppm, improving the state of the art by about a factor of 5. For the first time, the accuracy of a possible future quantum current standard based on single-electron transport was experimentally validated to be better than the best realization of the ampere within the present SI.

preprint2014arXiv

Partitioning of on-demand electron pairs

We demonstrate the high fidelity splitting of electron pairs emitted on demand from a dynamic quantum dot by an electronic beam splitter. The fidelity of pair splitting is inferred from the coincidence of arrival in two detector paths probed by a measurement of the partitioning noise. The emission characteristic of the on-demand electron source is tunable from electrons being partitioned equally and independently to electron pairs being split with a fidelity of 90%. For low beam splitter transmittance we further find evidence of pair bunching violating statistical expectations for independent fermions.

preprint2013arXiv

A self-referenced single-electron quantized-current source

With the anticipated redefinition of the international system of units (SI) the base units will be linked to fundamental constants of nature [1]. As for the electrical base unit "Ampere", it will be linked to the elementary charge e, requiring a corresponding quantum standard [2, 3]. Many concepts for such a standard have been investigated [4-14] relying on controlling the time-dependent tunnelling of electrons. However, the stochastic nature of quantum mechanical tunnelling intrinsically evokes uncontrolled deviations from the nominally quantized current. Alternatively, the counting of electrons [15, 16] has been explored but is severely limited in current amplitude and uncertainty by the low detector bandwidth. The late M. Wulf proposed [17] that this fundamental problem of electrical quantum metrology could be overcome by combining serial single-electron pumps with charge detectors allowing the generation of a quantized current and the in-situ detection of its stochastic deviations. Here, we experimentally demonstrate such quantized-current generation with in-situ detection of tunnelling errors at low frequencies and a reduction of the total current uncertainty by more than one order of magnitude. After frequency scaling this should enable a validated primary standard for the redefined SI base unit Ampere.

preprint2013arXiv

Spin-dependent shot noise enhancement in a quantum dot

The spin-dependent dynamical blockade was investigated in a lateral quantum dot in a magnetic field. Spin-polarized edge channels in the two-dimensional leads and the spatial distribution of Landau orbitals in the dot modulate the tunnel coupling of the quantum dot level spectrum. In a measurement of the electron shot noise we observe a pattern of super-Poissonian noise which is correlated to the spin-dependent competition between different transport channels.

preprint2012arXiv

Counting statistics for electron capture in a dynamic quantum dot

We report non-invasive single-charge detection of the full probability distribution $P_n$ of the initialization of a quantum dot with $n$ electrons for rapid decoupling from an electron reservoir. We analyze the data in the context of a model for sequential tunneling pinch-off, which has generic solutions corresponding to two opposing mechanisms. One limit considers sequential "freeze out" of an adiabatically evolving grand canonical distribution, the other one is an athermal limit equivalent to the solution of a generalized decay cascade model. We identify the athermal capturing mechanism in our sample, testifying to the high precision of our combined theoretical and experimental methods. The distinction between the capturing mechanisms allows to derive efficient experimental strategies for improving the initialization.

preprint2012arXiv

Measurement of finite-frequency current statistics in a single-electron transistor

Electron transport in nano-scale structures is strongly influenced by the Coulomb interaction which gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete understanding of the underlying physical processes requires measurements of the electrical fluctuations on all time and frequency scales, but experiments have so far been restricted to fixed frequency ranges as broadband detection of current fluctuations is an inherently difficult experimental procedure. Here we demonstrate that the electrical fluctuations in a single electron transistor (SET) can be accurately measured on all relevant frequencies using a nearby quantum point contact for on-chip real-time detection of the current pulses in the SET. We have directly measured the frequency-dependent current statistics and hereby fully characterized the fundamental tunneling processes in the SET. Our experiment paves the way for future investigations of interaction and coherence induced correlation effects in quantum transport.

preprint2011arXiv

A quantized current source with mesoscopic feedback

We study a mesoscopic circuit of two quantized current sources, realized by non-adiabatic single- electron pumps connected in series with a small micron-sized island in between. We find that quantum transport through the second pump can be locked onto the quantized current of the first one by a feedback due to charging of the mesoscopic island. This is confirmed by a measurement of the charge variation on the island using a nearby charge detector. Finally, the charge feedback signal clearly evidences loading into excited states of the dynamic quantum dot during single-electron pump operation.

preprint2011arXiv

Integrated quantized electronics: a semiconductor quantized voltage source

The Josephson effect in superconductors links a quantized output voltage Vout = f \cdot(h/2e) to the natural constants of the electron's charge e, Planck's constant h, and to an excitation frequency f with important applications in electrical quantum metrology. Also semiconductors are routinely applied in electrical quantum metrology making use of the quantum Hall effect. However, despite their broad range of further applications e.g. in integrated circuits, quantized voltage generation by a semiconductor device has never been obtained. Here we report a semiconductor quantized voltage source generating quantized voltages Vout = f\cdot(h/e). It is based on an integrated quantized circuit of a single electron pump operated at pumping frequency f and a quantum Hall device monolithically integrated in series. The output voltages of several \muV are expected to be scalable by orders of magnitude using present technology. The device might open a new route towards the closure of the quantum metrological triangle. Furthermore it represents a universal electrical quantum reference allowing to generate quantized values of the three most relevant electrical units of voltage, current, and resistance based on fundamental constants using a single device.

preprint2010arXiv

High cumulants in the counting statistics measured for a quantum dot

We report on measurements of single electron tunneling through a quantum dot using a quantum point contact as non-invasive charge detector with fast time response. We elaborate on the unambiguous identification of individual tunneling events and determine the distribution of transferred charges, the so-called full counting statistics. We discuss our data analysis, including the error estimates of the measurement, and show that the quality of our experimental results is sufficiently high to extract cumulants of the distribution up to the 20th order for short times.