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Kiumars Aryana

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2 published item(s)

preprint2026arXiv

Bridging Theory and Experiment in Virtually Imaged Phased Array (VIPA) Spectrometers

Virtually imaged phased array (VIPA) spectrometers provide high resolution and fast acquisition in a compact design, but their performance as dispersive instruments is sensitive to fabrication tolerances, component dimensions, and alignment. Here, leveraging numerical simulations validated by experimental data, we present a framework to identify the parameters that limit VIPA spectrometer resolution. This framework is applied to the construction of a new mid infrared VIPA spectrometer, tested at wavelengths near 4.6 um with both continuous-wave and frequency-comb laser sources, with a resolving power predicted by analytical expressions to be as high as RP = 830 000 (corresponding to a resolution of 78 MHz). Validated numerical simulations, however, provided a more realistic estimate that captures limits set by all the optical components. By correcting aberrations and optimizing alignment, a resolving power of RP = 440 000 (150 MHz) was experimentally achieved, corresponding to 80% of the value predicted by numerical simulation of the entire spectrometer. These results bridge the gap between analytical design expressions and experimental results for compact, high-resolution VIPA spectrometers to enable more efficient fabrication and advanced design across critical areas like applied space optics, line-by-line pulse shaping, and broadband spectral sensors.

preprint2020arXiv

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close to the memory cell dimension and, thus, the impact of interfaces on PCM operation is unknown. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in thermal boundary resistance as GST transitions from one crystallographic structure (cubic) to another (hexagonal) and as the thickness of tungsten contacts is reduced from five to two nanometers. Simulations reveal that interfacial resistance between the phase change unit and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~40% and ~50%, respectively. The resultant phase-dependent and geometric effects on thermal boundary resistance dictate that the effective thermal conductivity of the phase change unit can be reduced by a factor of four, presenting a new opportunity to reduce operating currents in PCMs.