Researcher profile

Khoe Van Nguyen

Khoe Van Nguyen contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

cond-mat.mes-hall cond-mat.str-el

Trust snapshot

Quick read

Trust 15 - UnverifiedVerification L1Unclaimed author

3works

0followers

2topics

4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2023arXiv

Topological Kondo Superconductors

Spin-triplet $p$-wave superconductors are promising candidates for topological superconductors. They have been proposed in various heterostructures where a material with strong spin-orbit interaction is coupled to a conventional $s$-wave superconductor by proximity effect. However, topological superconductors existing in nature and driven purely by strong electron correlations are yet to be studied. Here we propose a realization of such a system in a class of Kondo lattice materials in the absence of spin-orbit coupling and proximity effect. Therein, the odd-parity Kondo hybridization mediates ferromagnetic spin-spin coupling and leads to spin-triplet resonant-valence-bond ($t$-RVB) pairing between local moments. Spin-triplet $p\pm i p^\prime$-wave topological superconductivity is reached when Kondo effect co-exists with $t$-RVB. We identify the topological nature by the non-trivial topological invariant and the Majorana fermions at edges. Our results offer a comprehensive understanding of experimental observations on UTe$_2$, a U-based ferromagnetic heavy-electron superconductor.

preprint2020arXiv

Bloch-Grüneisen temperature and universal scaling of normalized resistivity in doped graphene revisited

In this work, we resolved some controversial issues on the Bloch-Grüneisen (BG) temperature in doped graphene via analytical and numerical calculations based on full inelastic electron-acoustic-phonon (EAP) scattering rate and various approximation schemes. Analytic results for BG temperature obtained by semi-inelastic (SI) approximation (which gives scattering rates in excellent agreement with the full inelastic scattering rates) are compared with those obtained by quasi-elastic (QE) approximation and the commonly adopted value of $Θ^{LA}_{F} = 2\hbar v_{LA} k_F/k_B$. It is found that the commonly adopted BG temperature in graphene ($Θ^{LA}_{F}$) is about 5 times larger than the value obtained by the QE approximation and about 2.5 times larger than that by the SI approximation, when using the crossing-point temperature where low-temperature and high-temperature limits of the resistivity meet. The corrected analytic relation based on SI approximation agrees extremely well with the transition temperatures determined by fitting the the low- and high-$T$ behavior of available experimental data of graphene's resistivity. We also introduce a way to determine the BG temperature including the full inelastic EAP scattering rate and the deviation of electron energy from the chemical potential ($μ$) numerically by finding the maximum of $\partial ρ(μ,T)/\partial T$. Using the analytic expression of $Θ_{BG,1}$ we can prove that the normalized resistivity defined as $R_{1}=ρ(μ,T)/ρ(μ,Θ_{BG,1})$ plotted as a function of $(T/Θ_{BG,1})$ is independent of the carrier density. Applying our results to previous experimental data extracted shows a universal scaling behavior, which is different from previous studies.

preprint2019arXiv

Full consideration of acoustic phonon scatterings in two-dimensional Dirac materials

The in-plane acoustic phonon scattering in graphene is solved by considering fully inelastic acoustic phonon scatterings in two-dimensional (2D) Dirac materials for large range of temperature ($T$) and chemical potential ($μ$). Rigorous analytical solutions and symmetry properties of Fermionic and Bosonic functions are obtained. We illustrate how doping alters the temperature dependence of acoustic phonon scattering rates. It is shown that the quasi-elastic and ansatz equations previously derived for acoustic phonon scatterings in graphene are limiting cases of the inelastic-scattering equations derived here. For heavily-doped graphene, we found that the high-$T$ behavior of resistivity is better described by $ρ(T, μ) \propto T(1 - ζ_aμ^2/3(k_BT)^2)$ rather than a linear $T$ behavior, and in the low $T$ regime we found $τ^{-1} \propto (k_BT)^4$ but with a different prefactor (i.e. $\sim$ 3 times smaller) in comparison with the existing quasi-elastic expressions. Furthermore, we found a simple analytic "semi-inelastic" expression of the form $τ^{-1} \propto (k_BT)^4/(1+ c T^3)$ which matches nearly perfectly with the full inelastic results for any temperature up to 500 K and $μ$ up to 1 eV. Our simple analytic results agree well with previous first-principles studies and available experimental data. Moreover, we obtain an analytical form for the acoustic gauge field $β_A = 3βγ_0/4\sqrt{2}$. Our analyses pave a way for investigating scatterings between electrons and other fundamental excitations with linear dispersion relation in 2D Dirac material-based heterostructures such as bogolon-mediated electron scattering in graphene-based hybrid Bose-Fermi systems.

Khoe Van Nguyen

Quick read

Decide how to stay connected

How to connect with this researcher

Open a focused conversation when the fit is right

See the researcher in context

Building this graph slice

3 published item(s)

Topological Kondo Superconductors

Bloch-Grüneisen temperature and universal scaling of normalized resistivity in doped graphene revisited

Full consideration of acoustic phonon scatterings in two-dimensional Dirac materials