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Kazuhiro Kuruma

Kazuhiro Kuruma contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Topologically-protected single-photon sources with topological slow light photonic crystal waveguides

Slow light waveguides are advantageous for implementing high-performance single-photon sources required for scalable operation of integrated quantum photonic circuits (IQPCs), though such waveguides are known to suffer from propagation loss due to backscattering. A way to overcome the drawback is to use topological photonics, in which robust waveguiding in topologically-protected optical modes has recently been demonstrated. Here, we report single-photon sources using single quantum dots (QDs) embedded in topological slow light waveguides based on valley photonic crystals. We observe Purcell-enhanced single-photon emission from a QD into a topological slow light mode with a group index over 20 and its robust propagation even under the presence of sharp bends. These results pave the way for the realization of robust and high-performance single-photon sources indispensable for IQPCs.

preprint2020arXiv

Strong coupling between a single quantum dot and an L4/3 photonic crystal nanocavity

We demonstrate strong coupling between a single quantum dot and a GaAs-based L4/3-type photonic crystal nanocavity. The L4/3 cavity supports a high theoretical Q factor (~8{\times}10^6), a small mode volume (~0.32 (λ/n)^3), and an electric field distribution with the maximum electric field lying within the host dielectric material, which facilitates strong coupling with a quantum dot. We fabricated L4/3 cavities and observed a high Q factor over 80,000 using photoluminescence measurement. We confirmed strong coupling between a single quantum dot and an L4/3 cavity with a Q factor of 33,000 by observing a clear anti-crossing in the spectra.

preprint2020arXiv

Surface-passivated high-Q GaAs photonic crystal nanocavity with quantum dots

Photonic crystal (PhC) nanocavities with high quality (Q) factors have attracted much attention because of their strong spatial and temporal light confinement capability. The resulting enhanced light-matter interactions are beneficial for diverse photonic applications, ranging from on-chip optical communications to sensing. However, currently achievable Q factors for active PhC nanocavities, which embed active emitters inside, are much lower than those of the passive structures because of large optical loss, presumably originating from light scattering by structural imperfections and/or optical absorptions. Here, we demonstrate a significant improvement of Q factors up to ~160,000 in GaAs active PhC nanocavities using a sulfur-based surface passivation technique. This value is the highest ever reported for any active PhC nanocavities with semiconductor quantum dots. The surface-passivated cavities also exhibit reduced variation in both Q factors and cavity resonant wavelengths. We find that the improvement in the cavity performance presumably arises from suppressed light absorption at the surface of the PhC's host material by performing a set of PL measurements in spectral and time domains. With the surface passivation technique, we also demonstrate a strongly-coupled single quantum dot-cavity system based on a PhC nanocavity with a high Q factor of ~100,000. These results will pave the way for advanced quantum dot-based cavity quantum electrodynamics and for GaAs micro/nanophotonic applications containing active emitters.