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Researcher profile

Yasuhiko Arakawa

Yasuhiko Arakawa contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.opticsquant-phphysics.app-phcond-mat.mes-hall

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Published work

7 published item(s)

preprint2022arXiv

A large-scale single-mode array laser based on a topological edge mode

Topological lasers have been intensively investigated as a strong candidate for robust single-mode lasers. A typical topological laser employs a single-mode topological edge state, which appears deterministically in a designed topological bandgap and exhibits robustness to disorder. These properties seem to be highly attractive in pursuit of high power lasers capable of single mode operation. In this paper, we theoretically analyze a large-scale single-mode laser based on a topological edge state. We consider a sizable array laser consisting of a few hundreds of site resonators, which support a single topological edge mode broadly distributed among the resonators. We build a basic model describing the laser using the tight binding approximation and evaluate the stability of single mode lasing based on the threshold gain difference $Δα$ between the first-lasing edge mode and the second-lasing competing bulk mode. Our calculations demonstrate that stronger couplings between the cavities and lower losses are advantageous for achieving stable operation of the device. When assuming an average coupling of 100 cm$^{-1}$ between site resonators and other realistic parameters, the threshold gain difference $Δα$ can reach about 2 cm$^{-1}$, which would be sufficient for stable single mode lasing using a conventional semiconductor laser architecture. We also consider the effects of possible disorders and long-range interactions to assess the robustness of the laser under non-ideal situations. These results lay the groundwork for developing single-mode high-power topological lasers.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Topologically-protected single-photon sources with topological slow light photonic crystal waveguides

Slow light waveguides are advantageous for implementing high-performance single-photon sources required for scalable operation of integrated quantum photonic circuits (IQPCs), though such waveguides are known to suffer from propagation loss due to backscattering. A way to overcome the drawback is to use topological photonics, in which robust waveguiding in topologically-protected optical modes has recently been demonstrated. Here, we report single-photon sources using single quantum dots (QDs) embedded in topological slow light waveguides based on valley photonic crystals. We observe Purcell-enhanced single-photon emission from a QD into a topological slow light mode with a group index over 20 and its robust propagation even under the presence of sharp bends. These results pave the way for the realization of robust and high-performance single-photon sources indispensable for IQPCs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Reflectivity of Finite 3D GaAs Photonic Band Gap Crystals

We study the optical reflectivity of three-dimensional (3D) photonic band gap crystals with increasing thickness. The crystals consist of GaAs plates with nanorod arrays that are assembled by an advanced stacking method into high-quality 3D woodpile structures. We observe intense and broad reflectivity peak with stop bands that correspond to a broad gap in the photonic band structures. The maximum reflectivity quickly reaches high values even for a few crystal layers. Remarkably, the bandwidth of the stop bands hardly decreases with increasing crystal thickness, in good agreement with FDTD simulations. This behavior differs remarkably from the large changes observed earlier in weakly interacting 3D photonic crystals. The nearly constant bandwidth and high reflectivity are rationalized by multiple Bragg interference that occurs in strongly interacting photonic band gap crystals, whereby the incident light scatters from multiple reciprocal lattice vectors simultaneously, in particular from oblique ones that are parallel to a longer crystal dimension and thus experience hardly any finite size effects. Our new insights have favorable consequences for the application of 3D photonic band gap crystals, notably since even thin structures reveal the full band gap functionality, including devices that shield quantum bits from vacuum fluctuations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strong coupling between a single quantum dot and an L4/3 photonic crystal nanocavity

We demonstrate strong coupling between a single quantum dot and a GaAs-based L4/3-type photonic crystal nanocavity. The L4/3 cavity supports a high theoretical Q factor (~8{\times}10^6), a small mode volume (~0.32 (λ/n)^3), and an electric field distribution with the maximum electric field lying within the host dielectric material, which facilitates strong coupling with a quantum dot. We fabricated L4/3 cavities and observed a high Q factor over 80,000 using photoluminescence measurement. We confirmed strong coupling between a single quantum dot and an L4/3 cavity with a Q factor of 33,000 by observing a clear anti-crossing in the spectra.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Surface-passivated high-Q GaAs photonic crystal nanocavity with quantum dots

Photonic crystal (PhC) nanocavities with high quality (Q) factors have attracted much attention because of their strong spatial and temporal light confinement capability. The resulting enhanced light-matter interactions are beneficial for diverse photonic applications, ranging from on-chip optical communications to sensing. However, currently achievable Q factors for active PhC nanocavities, which embed active emitters inside, are much lower than those of the passive structures because of large optical loss, presumably originating from light scattering by structural imperfections and/or optical absorptions. Here, we demonstrate a significant improvement of Q factors up to ~160,000 in GaAs active PhC nanocavities using a sulfur-based surface passivation technique. This value is the highest ever reported for any active PhC nanocavities with semiconductor quantum dots. The surface-passivated cavities also exhibit reduced variation in both Q factors and cavity resonant wavelengths. We find that the improvement in the cavity performance presumably arises from suppressed light absorption at the surface of the PhC's host material by performing a set of PL measurements in spectral and time domains. With the surface passivation technique, we also demonstrate a strongly-coupled single quantum dot-cavity system based on a PhC nanocavity with a high Q factor of ~100,000. These results will pave the way for advanced quantum dot-based cavity quantum electrodynamics and for GaAs micro/nanophotonic applications containing active emitters.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Active topological photonics

Topological photonics has emerged as a novel route to engineer the flow of light. Topologically-protected photonic edge modes, which are supported at the perimeters of topologically-nontrivial insulating bulk structures, have been of particular interest as they may enable low-loss optical waveguides immune to structural disorder. Very recently, there is a sharp rise of interest in introducing gain materials into such topological photonic structures, primarily aiming at revolu-tionizing semiconductor lasers with the aid of physical mechanisms existing in topological physics. Examples of re-markable realizations are topological lasers with unidirectional light output under time-reversal symmetry breaking and topologically-protected polariton and micro/nano-cavity lasers. Moreover, the introduction of gain and loss provides a fascinating playground to explore novel topological phases, which are in close relevance to non-Hermitian and parity-time symmetric quantum physics and are in general difficult to access using fermionic condensed matter systems. Here, we review the cutting-edge research on active topological photonics, in which optical gain plays a pivotal role. We discuss recent realizations of topological lasers of various kinds, together with the underlying physics explaining the emergence of topological edge modes. In such demonstrations, the optical modes of the topological lasers are deter-mined by the dielectric structures and support lasing oscillation with the help of optical gain. We also address recent researches on topological photonic systems in which gain and loss themselves essentially influence on topological prop-erties of the bulk systems. We believe that active topological photonics provides powerful means to advance mi-cro/nanophotonics systems for diverse applications and topological physics itself as well.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

In-situ wavelength tuning of quantum-dot single-photon sources integrated on a CMOS silicon chip

Silicon quantum photonics provides a promising pathway to realize large-scale quantum photonic integrated circuits (QPICs) by exploiting the power of complementary-metal-oxide-semiconductor (CMOS) technology. Toward scalable operation of such silicon-based QPICs, a straightforward approach is to integrate deterministic single-photon sources (SPSs). To this end, hybrid integration of deterministic solid-state SPSs, such as those based on InAs/GaAs quantum dots (QDs), is highly promising. However, the spectral and spatial randomness inherent in the QDs pose a serious challenge for scalable implementation of multiple identical SPSs on a silicon CMOS chip. To overcome this challenge, we have been investigating a new hybrid integration technique called transfer printing, which is based on a pick-and-place operation and allows for the integration of desired QD SPSs on any locations on the silicon CMOS chips at will. Nevertheless, even in this scenario, in-situ fine tuning for perfect wavelength matching among the integrated QD SPSs will be required for interfering photons from the dissimilar sources. Here, we demonstrate in-situ wavelength tuning of QD SPSs integrated on a CMOS silicon chip. To thermally tune the emission wavelengths of the integrated QDs, we augmented the QD SPSs with optically driven heating pads. The integration of all the necessary elements was performed using transfer printing, which largely simplified the fabrication of the three-dimensional stack of micro/nanophotonic structures. We further demonstrate in-situ wavelength matching between two dissimilar QD sources integrated on the same silicon chip. Our transfer-printing-based approach will open the possibility for realizing large-scale QPICs that leverage CMOS technology.

0 citations0 reviewsNo code linkedOpen access