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Source author record

Yasutomo Ota

Yasutomo Ota appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.opticsquant-phcond-mat.otherphysics.app-phcond-mat.mes-hallcond-mat.mtrl-scicond-mat.quant-gas

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Published work

12 published item(s)

preprint2022arXiv

A large-scale single-mode array laser based on a topological edge mode

Topological lasers have been intensively investigated as a strong candidate for robust single-mode lasers. A typical topological laser employs a single-mode topological edge state, which appears deterministically in a designed topological bandgap and exhibits robustness to disorder. These properties seem to be highly attractive in pursuit of high power lasers capable of single mode operation. In this paper, we theoretically analyze a large-scale single-mode laser based on a topological edge state. We consider a sizable array laser consisting of a few hundreds of site resonators, which support a single topological edge mode broadly distributed among the resonators. We build a basic model describing the laser using the tight binding approximation and evaluate the stability of single mode lasing based on the threshold gain difference $Δα$ between the first-lasing edge mode and the second-lasing competing bulk mode. Our calculations demonstrate that stronger couplings between the cavities and lower losses are advantageous for achieving stable operation of the device. When assuming an average coupling of 100 cm$^{-1}$ between site resonators and other realistic parameters, the threshold gain difference $Δα$ can reach about 2 cm$^{-1}$, which would be sufficient for stable single mode lasing using a conventional semiconductor laser architecture. We also consider the effects of possible disorders and long-range interactions to assess the robustness of the laser under non-ideal situations. These results lay the groundwork for developing single-mode high-power topological lasers.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Time-resolved physical spectrum in cavity quantum electrodynamics

The time-resolved physical spectrum of luminescence is theoretically studied for a standard cavity quantum electrodynamics system. In contrast to the power spectrum for the steady state, the correlation functions up to the present time are crucial for the construction of the time-resolved spectrum, while the correlations with future quantities are inaccessible because of the causality, i.e., the future quantities cannot be measured until the future comes. We find that this causality plays a key role to understand the time-resolved spectrum, in which the Rabi doublet can never be seen during the time of the first peak of the Rabi oscillation. Furthermore, the causality can influence on the transient magnitude of the Rabi doublet in some situations. We also study the dynamics of the Fano anti-resonance, where the difference from the Rabi doublet can be highlighted.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Topologically-protected single-photon sources with topological slow light photonic crystal waveguides

Slow light waveguides are advantageous for implementing high-performance single-photon sources required for scalable operation of integrated quantum photonic circuits (IQPCs), though such waveguides are known to suffer from propagation loss due to backscattering. A way to overcome the drawback is to use topological photonics, in which robust waveguiding in topologically-protected optical modes has recently been demonstrated. Here, we report single-photon sources using single quantum dots (QDs) embedded in topological slow light waveguides based on valley photonic crystals. We observe Purcell-enhanced single-photon emission from a QD into a topological slow light mode with a group index over 20 and its robust propagation even under the presence of sharp bends. These results pave the way for the realization of robust and high-performance single-photon sources indispensable for IQPCs.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Synthetic dimension band structures on a Si CMOS photonic platform

Synthetic dimensions, which simulate spatial coordinates using non-spatial degrees of freedom, are drawing interest in topological science and other fields for modelling higher-dimensional phenomena on simple structures. We present the first realization of a synthetic frequency dimension on a silicon ring resonator photonic device fabricated using a CMOS process. We confirm that its coupled modes correspond to a 1D tight-binding model through acquisition of up to 280 GHz bandwidth optical frequency comb-like spectra, and by measuring the first synthetic band structures on an integrated device. Furthermore, we realized two types of gauge potentials along the frequency dimension, and probed their effects through the associated band structures. An electric field analogue was produced via modulation detuning, whereas effective magnetic fields were induced using synchronized nearest- and second-nearest-neighbor coupling. Creation of coupled mode lattices and two effective forces on a monolithic Si CMOS device represents a key step towards wider adoption of topological principles.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strong coupling between a single quantum dot and an L4/3 photonic crystal nanocavity

We demonstrate strong coupling between a single quantum dot and a GaAs-based L4/3-type photonic crystal nanocavity. The L4/3 cavity supports a high theoretical Q factor (~8{\times}10^6), a small mode volume (~0.32 (λ/n)^3), and an electric field distribution with the maximum electric field lying within the host dielectric material, which facilitates strong coupling with a quantum dot. We fabricated L4/3 cavities and observed a high Q factor over 80,000 using photoluminescence measurement. We confirmed strong coupling between a single quantum dot and an L4/3 cavity with a Q factor of 33,000 by observing a clear anti-crossing in the spectra.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Surface-passivated high-Q GaAs photonic crystal nanocavity with quantum dots

Photonic crystal (PhC) nanocavities with high quality (Q) factors have attracted much attention because of their strong spatial and temporal light confinement capability. The resulting enhanced light-matter interactions are beneficial for diverse photonic applications, ranging from on-chip optical communications to sensing. However, currently achievable Q factors for active PhC nanocavities, which embed active emitters inside, are much lower than those of the passive structures because of large optical loss, presumably originating from light scattering by structural imperfections and/or optical absorptions. Here, we demonstrate a significant improvement of Q factors up to ~160,000 in GaAs active PhC nanocavities using a sulfur-based surface passivation technique. This value is the highest ever reported for any active PhC nanocavities with semiconductor quantum dots. The surface-passivated cavities also exhibit reduced variation in both Q factors and cavity resonant wavelengths. We find that the improvement in the cavity performance presumably arises from suppressed light absorption at the surface of the PhC's host material by performing a set of PL measurements in spectral and time domains. With the surface passivation technique, we also demonstrate a strongly-coupled single quantum dot-cavity system based on a PhC nanocavity with a high Q factor of ~100,000. These results will pave the way for advanced quantum dot-based cavity quantum electrodynamics and for GaAs micro/nanophotonic applications containing active emitters.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Active topological photonics

Topological photonics has emerged as a novel route to engineer the flow of light. Topologically-protected photonic edge modes, which are supported at the perimeters of topologically-nontrivial insulating bulk structures, have been of particular interest as they may enable low-loss optical waveguides immune to structural disorder. Very recently, there is a sharp rise of interest in introducing gain materials into such topological photonic structures, primarily aiming at revolu-tionizing semiconductor lasers with the aid of physical mechanisms existing in topological physics. Examples of re-markable realizations are topological lasers with unidirectional light output under time-reversal symmetry breaking and topologically-protected polariton and micro/nano-cavity lasers. Moreover, the introduction of gain and loss provides a fascinating playground to explore novel topological phases, which are in close relevance to non-Hermitian and parity-time symmetric quantum physics and are in general difficult to access using fermionic condensed matter systems. Here, we review the cutting-edge research on active topological photonics, in which optical gain plays a pivotal role. We discuss recent realizations of topological lasers of various kinds, together with the underlying physics explaining the emergence of topological edge modes. In such demonstrations, the optical modes of the topological lasers are deter-mined by the dielectric structures and support lasing oscillation with the help of optical gain. We also address recent researches on topological photonic systems in which gain and loss themselves essentially influence on topological prop-erties of the bulk systems. We believe that active topological photonics provides powerful means to advance mi-cro/nanophotonics systems for diverse applications and topological physics itself as well.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

In-situ wavelength tuning of quantum-dot single-photon sources integrated on a CMOS silicon chip

Silicon quantum photonics provides a promising pathway to realize large-scale quantum photonic integrated circuits (QPICs) by exploiting the power of complementary-metal-oxide-semiconductor (CMOS) technology. Toward scalable operation of such silicon-based QPICs, a straightforward approach is to integrate deterministic single-photon sources (SPSs). To this end, hybrid integration of deterministic solid-state SPSs, such as those based on InAs/GaAs quantum dots (QDs), is highly promising. However, the spectral and spatial randomness inherent in the QDs pose a serious challenge for scalable implementation of multiple identical SPSs on a silicon CMOS chip. To overcome this challenge, we have been investigating a new hybrid integration technique called transfer printing, which is based on a pick-and-place operation and allows for the integration of desired QD SPSs on any locations on the silicon CMOS chips at will. Nevertheless, even in this scenario, in-situ fine tuning for perfect wavelength matching among the integrated QD SPSs will be required for interfering photons from the dissimilar sources. Here, we demonstrate in-situ wavelength tuning of QD SPSs integrated on a CMOS silicon chip. To thermally tune the emission wavelengths of the integrated QDs, we augmented the QD SPSs with optically driven heating pads. The integration of all the necessary elements was performed using transfer printing, which largely simplified the fabrication of the three-dimensional stack of micro/nanophotonic structures. We further demonstrate in-situ wavelength matching between two dissimilar QD sources integrated on the same silicon chip. Our transfer-printing-based approach will open the possibility for realizing large-scale QPICs that leverage CMOS technology.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Vacuum Rabi spectra of a single quantum emitter

We report the observation of the vacuum Rabi splitting of a single quantum emitter by measuring its direct spontaneous emission into free space. We used a semiconductor quantum dot inside a photonic crystal nanocavity, in conjunction with an appropriate cavity design and filtering with a polarizer and an aperture, enabling the extraction of the inherently-weak emitter's signal. The emitter's vacuum Rabi spectra exhibit clear differences to those measured by detecting the cavity photon leakage. Moreover, we observed an asymmetric vacuum Rabi spectrum induced by interference between the emitter and cavity detection channels. Our observations lay the groundwork for accessing various cavity quantum electrodynamics phenomena that manifest themselves only in the emitter's direct spontaneous emission.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Zero-cell photonic crystal nanocavity laser with quantum dot gain

We demonstrate laser oscillation in a hexagonal-lattice photonic crystal nanocavity using an InGaAs quantum dot gain material by optical pumping at 5 K. The cavity comprises a defect created by shifting several air holes in a two-dimensional photonic crystal slab structure without removing any air holes to achieve both small mode volume and a high cavity quality factor. The measured cavity quality factors and estimated mode volume for the nanocavity are ~33,000 and ~0.004 um^3. The laser threshold is compared between the zero-cell and L3-type nanocavity lasers, and the zero-cell nanolasers are found to have small thresholds of about one-third of the L3-type nanolasers. This result suggests that a higher Purcell factor of the zero-cell nanolaser is reflected as a smaller laser threshold.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Investigation of the spectral triplet in strongly coupled quantum dot-nanocavity system

We experimentally investigated the excitation power dependence of a strongly coupled quantum dot (QD)-photonic crystal nanocavity system by photoluminescence (PL) measurements. At a low-excitation power regime, we observed vacuum Rabi doublet emission at QD-cavity resonance condition. With increasing excitation power, in addition to the doublet, a third emission peak appeared. This observed spectral change is unexpected from conventional atomic cavity quantum electrodynamics. The observations can be attributed to featured pumping processes in the semiconductor QD-cavity system.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Photonic crystal nanocavity laser with a single quantum dot gain

We demonstrate a photonic crystal nanocavity laser essentially driven by a self-assembled InAs/GaAs single quantum dot gain. The investigated nanocavities contain only 0.4 quantum dots on an average; an ultra-low density quantum dot sample (1.5 x 108 cm-2) is used so that a single quantum dot can be isolated from the surrounding quantum dots. Laser oscillation begins at a pump power of 42 nW under resonant condition, while the far-detuning conditions require ~145 nW for lasing. This spectral detuning dependence of laser threshold indicates substantial contribution of the single quantum dot to the total gain. Moreover, photon correlation measurements show a distinct transition from anti-bunching to Poissonian via bunching with the increase of the excitation power, which is also an evidence of laser oscillation with the single quantum dot.

0 citations0 reviewsNo code linkedOpen access