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Kayoung Lee

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cond-mat.mes-hall cond-mat.str-el cond-mat.mtrl-sci

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preprint2016arXiv

Giant Frictional Drag in Double Bilayer Graphene Heterostructures

We study the frictional drag between carriers in two bilayer graphene flakes separated by a 2 $-$ 5 nm thick hexagonal boron nitride dielectric. At temperatures ( $T$ ) lower than $\sim$ 10 K, we observe a large anomalous negative drag emerging predominantly near the drag layer charge neutrality. The anomalous drag resistivity increases dramatically with reducing {\it T}, and becomes comparable to the layer resistivity at the lowest {\it T} = 1.5 K. At low $T$ the drag resistivity exhibits a breakdown of layer reciprocity. A comparison of the drag resistivity and the drag layer Peltier coefficient suggests a thermoelectric origin of this anomalous drag.

preprint2014arXiv

Chemical Potential and Quantum Hall Ferromagnetism in Bilayer Graphene

Bilayer graphene has a unique electronic structure influenced by a complex interplay between various degrees of freedom. We probe its chemical potential using double bilayer graphene heterostructures, separated by a hexagonal boron nitride dielectric. The chemical potential has a non-linear carrier density dependence, and bears signatures of electron-electron interactions. The data allow a direct measurement of the electric field-induced bandgap at zero magnetic field, the orbital Landau level (LLs) energies, and the broken symmetry quantum Hall state gaps at high magnetic fields. We observe spin-to-valley polarized transitions for all half-filled LLs, as well as emerging phases at filling factors ν= 0 and ν= +-2. Furthermore, the data reveal interaction-driven negative compressibility and electron-hole asymmetry in N = 0, 1 LLs.

preprint2014arXiv

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.

preprint2012arXiv

Quantum Hall Effect in Bernal Stacked and Twisted Bilayer Graphene Grown on Cu by Chemical Vapor Deposition

We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport measurements performed on bilayer domains with a wide 2D band reveal quantum Hall states (QHSs) at filling factors $ν=4, 8, 12$ consistent with a Bernal stacked bilayer, while magnetotransport measurements in bilayer domains defined by a narrow 2D band show a superposition of QHSs of two independent monolayers. The analysis of the Shubnikov-de Haas oscillations measured in twisted graphene bilayers provides the carrier density in each layer as a function of the gate bias and the inter-layer capacitance.

preprint2011arXiv

Magnetotransport Properties of Quasi-Free Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking

We investigate the magnetotransport properties of quasi-free standing epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization in Ar, followed by H $_2$ intercalation. At the charge neutrality point the longitudinal resistance shows an insulating behavior, which follows a temperature dependence consistent with variable range hopping transport in a gapped state. In a perpendicular magnetic field, we observe quantum Hall states (QHSs) both at filling factors ( $ν$ ) multiple of four ( $ν=4, 8, 12$ ), as well as broken valley symmetry QHSs at $ν=0$ and $ν=6$ . These results unambiguously show that the quasi-free standing graphene bilayer grown on the Si-face of SiC exhibits Bernal stacking.

preprint2011arXiv

Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at $ν=0$ in High Magnetic Fields

We investigate the transverse electric field ( $E$ ) dependence of the $ν$ =0 quantum Hall state (QHS) in dual-gated graphene bilayers in high magnetic fields. The longitudinal resistivity ( $ρ_{xx}$ ) measured at $ν$ =0 shows an insulating behavior which is strongest in the vicinity of $E$ =0, and at large $E$ -fields. At a fixed perpendicular magnetic field ( $B$ ), the $ν$ =0 QHS undergoes a transition as a function of $E$ , marked by a minimum, temperature-independent $ρ_{xx}$ . This observation is explained by a transition from a spin polarized $ν$ =0 QHS at small $E$ -fields, to a valley (layer) polarized $ν$ =0 QHS at large $E$ -fields. The $E$ -field value at which the transition occurs has a linear dependence on $B$

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Kayoung Lee

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6 publications

Giant Frictional Drag in Double Bilayer Graphene Heterostructures

Chemical Potential and Quantum Hall Ferromagnetism in Bilayer Graphene

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

Quantum Hall Effect in Bernal Stacked and Twisted Bilayer Graphene Grown on Cu by Chemical Vapor Deposition

Magnetotransport Properties of Quasi-Free Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking

Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at $ν=0$ in High Magnetic Fields

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Kayoung Lee

Research overview

Is this your work?

6 publications

Giant Frictional Drag in Double Bilayer Graphene Heterostructures

Chemical Potential and Quantum Hall Ferromagnetism in Bilayer Graphene

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

Quantum Hall Effect in Bernal Stacked and Twisted Bilayer Graphene Grown on Cu by Chemical Vapor Deposition

Magnetotransport Properties of Quasi-Free Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking

Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at ν=0ν=0ν=0 in High Magnetic Fields

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Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at $ν=0$ in High Magnetic Fields