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Kamaram Munira

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2016arXiv

Instability Mechanism for STT-MRAM switching

To optimize the design of STT-MRAM (spin-transfer torque magnetic random access memory), it is necessary to be able to predict switching (error) rates. For small elements, this can be done using a single-macrospin theory since the element will switch quasi-uniformly. Experimental results on switching rates suggest that elements large enough to be thermally stable switch by some mechanism with a lower energy barrier. It has been suggested that this mechanism is local nucleation, but we have also previously reported a global magnetostatic instability, which is consistent with the lower experimental energy barriers. In this paper, we try to determine which of these mechanisms is most important by visualizing the switching in a "U-NU" (uniform - nonuniform) phase diagram. We find that switching trajectories follow the horizontal U axis (i.e., quasi-uniform precession) until they reach a critical amplitude, at which the magnetostatic instability grows exponentially and a domain wall forms at the center, whose motion completes the switching. We have tried unsuccessfully to induce local nucleation (a domain wall at the edge). We conclude that the dominant switching mechanism is not edge nucleation, but the magnetostatic instability.

preprint2016arXiv

Switching of Dipole Coupled Multiferroic Nanomagnets in the Presence of Thermal Noise: Reliability of Nanomagnetic Logic

The stress-induced switching behavior of a multiferroic nanomagnet, dipole coupled to a hard nanomagnet, is numerically studied by solving the stochastic Landau-Lifshitz-Gilbert (LLG) equation for a single domain macro-spin state. Different factors were found to affect the switching probability in the presence of thermal noise at room temperature: (i) dipole coupling strength, (ii) stress levels, and (iii) stress withdrawal rates (ramp rates). We report that the thermal broadening of the magnetization distribution causes large switching error rates. This could render nanomagnetic logic schemes that rely on dipole coupling to perform Boolean logic operations impractical whether they are clocked by stress or field or other means.

preprint2014arXiv

Calculation of energy-barrier lowering by incoherent switching in STT-MRAM

To make a useful STT-MRAM (spin-transfer torque magnetoresistive random-access memory) device, it is necessary to be able to calculate switching rates, which determine the error rates of the device. In a single-macrospin model, one can use a Fokker-Planck equation to obtain a low-current thermally activated rate $\propto \exp(-E_{eff}/k_B T)$. Here the effective energy barrier $E_{eff}$ scales with the single-macrospin energy barrier $KV$, where $K$ is the effective anisotropy energy density and $V$ the volume. A long-standing paradox in this field is that the actual energy barrier appears to be much smaller than this. It has been suggested that incoherent motions may lower the barrier, but this has proved difficult to quantify. In the present paper, we show that the coherent precession has a magnetostatic instability, which allows quantitative estimation of the energy barrier and may resolve the paradox.

preprint2014arXiv

Reducing error rates in straintronic multiferroic dipole-coupled nanomagnetic logic by pulse shaping

Dipole-coupled nanomagnetic logic (NML), where nanomagnets with bistable magnetization states act as binary switches and information is transferred between them via dipole coupling and Bennett clocking, is a potential replacement for conventional transistor logic since magnets dissipate less energy than transistors when they switch in response to the clock. However, dipole-coupled NML is much more error-prone than transistor logic because thermal noise can easily disrupt magnetization dynamics. Here, we study a particularly energy-efficient version of dipole-coupled NML known as straintronic multiferroic logic (SML) where magnets are clocked/switched with electrically generated mechanical strain. By appropriately shaping the voltage pulse that generates strain, the error rate in SML can be reduced to tolerable limits. In this paper, we describe the error probabilities associated with various stress pulse shapes and discuss the trade-off between error rate and switching speed in SML.

preprint2012arXiv

A quasi-analytical model for energy-delay-reliability tradeoff studies during write operations in perpendicular STT-RAM cell

One of the biggest challenges the current STT-RAM industry faces is maintaining a high thermal stability while trying to switch within a given voltage pulse and energy cost. In this paper, we present a physics based analytical model that uses a modified Simmons' tunneling expression to capture the spin dependent tunneling in a magnetic tunnel junction(MTJ). Coupled with an analytical derivation of the critical switching current based on the Landau-Lifshitz-Gilbert equation, and the write error rate derived from a solution to the Fokker-Planck equation, this model provides us a quick estimate of the energydelay- reliability tradeoffs in perpendicular STTRAMs due to thermal fluctuations. In other words, the model provides a simple way to calculate the energy consumed during a write operation that ensures a certain error rate and delay time, while being numerically far less intensive than a full-fledged stochastic calculation. We calculate the worst case energy consumption during anti-parallel (AP) to parallel (P) and P to AP switchings and quantify how increasing the anisotropy field HK and lowering the saturation magnetization MS, can significantly reduce the energy consumption. A case study on how manufacturing variations of the MTJ cell can affect the energy consumption and delay is also reported.

preprint2011arXiv

Energy dissipation and switching delay in spin-transfer torque switching of nanomagnets with low-saturation magnetization in the presence of thermal fluctuations

A common ploy to reduce the switching current and energy dissipation in spin-transfer-torque driven magnetization switching of shape-anisotropic single-domain nanomagnets is to employ magnets with low saturation magnetization $M_s$ and high shape-anisotropy. The high shape-anisotropy compensates for low $M_s$ to keep the static switching error rate constant. However, this ploy increases the switching delay, its variance in the presence of thermal noise, and the dynamic switching error rate. Using the stochastic Landau-Lifshitz-Gilbert equation with a random torque emulating thermal noise, we show that pumping some excess spin-polarized current into the nanomagnet during switching will keep the mean switching delay and its variance constant as we reduce $M_s$, while still reducing the energy dissipation significantly.