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Avik W. Ghosh

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Published work

33 published item(s)

preprint2022arXiv

Dynamical system-based computational models for solving combinatorial optimization on hypergraphs

The intrinsic energy minimization in dynamical systems offers a valuable tool for minimizing the objective functions of computationally challenging problems in combinatorial optimization. However, most prior works have focused on mapping such dynamics to combinatorial optimization problems whose objective functions have quadratic degree (e.g., MaxCut); such problems can be represented and analyzed using graphs. However, the work on developing such models for problems that need objective functions with degree greater than two, and subsequently, entail the use of hypergraph data structures, is relatively sparse. In this work, we develop dynamical system-inspired computational models for several such problems. Specifically, we define the 'energy function' for hypergraph-based combinatorial problems ranging from Boolean SAT and its variants to integer factorization, and subsequently, define the resulting system dynamics. We also show that the design approach is applicable to optimization problems with quadratic degree, and use it develop a new dynamical system formulation for minimizing the Ising Hamiltonian. Our work not only expands on the scope of problems that can be directly mapped to, and solved using physics-inspired models, but also creates new opportunities to design high-performance accelerators for solving combinatorial optimization.

preprint2021arXiv

Biaxial Strain Modulated Valence Band Engineering in III-V Digital Alloys

Some III-V digital alloy avalanche photodiodes exhibit low excess noise. These alloys have low hole ionization coefficients due to presence of small 'minigaps', enhanced effective mass and large separation between light-hole and split-off bands in the valence band. In this letter, an explanation for the formation of the minigaps using a tight binding picture is provided. Furthermore, we demonstrate that decreasing substrate lattice constant can increase the minigap size and mass in the transport direction. This leads to reduced quantum tunneling and phonon scattering of the holes. Finally, we illustrate the band structure modification with substrate lattice constant for other III-V digital alloys.

preprint2021arXiv

Positional stability of skyrmions in a racetrack memory with notched geometry

Magnetic skyrmions are chiral spin textures with attractive features, such as ultra-small size, solitonic nature, and easy mobility with small electrical currents that make them promising as information-carrying bits in low-power high-density memory, and logic applications. However, it is essential to guarantee the positional stability of skyrmions for reliable information extraction. Using micromagnetic simulations for the minimum energy path (MEP), we compute the energy barriers associated with stabilizing notches along a racetrack. We vary material parameters, specifically, the strength of the chiral Dzyaloshinskii-Moriya interactions (DMI), the notch geometry, and the thickness of the racetrack to get the optimal barrier height. We find that the reduction of skyrmion size as it squeezes past the notch gives rise to the energy barrier. We find a range of energy barriers up to ~ 45 kBT for a racetrack of 5 nm thickness that can provide years long positional lifetime of skyrmions for long-term memory applications while requiring a moderate amount of current (~ 10^10 A/m2) to move the skyrmions. Furthermore, we derive quasi-analytical equations to estimate the energy barrier. We also explore other pinning mechanisms, such as a local variation of material parameters in a region, and find that notched geometry provides the highest energy barrier. Our results open up possibilities to design practical skyrmion-based racetrack geometries for spintronics applications.

preprint2021arXiv

Self focusing Hybrid Skyrmions in spatially varying canted ferromagnetic systems

Magnetic skyrmions are quasiparticle configurations in a magnetic film that can act as information carrying bits for ultrasmall, all-electronic nonvolatile memory. The skyrmions can be nucleated and driven by spin-orbit torque from a current driven in a heavy metal underlayer. Along its gyrotropic path, a Magnus force can cause a skyrmion to be annihilated at the boundaries. By combining interfacial and bulk Dzyaloshinskii-Moriya interactions (DMIs), for instance by using a B20 material on top of a heavy metal layer with high spin-orbit coupling, it is possible to engineer a hybrid skyrmion that will travel parallel to the racetrack with zero Magnus force. We show that by using a spatially varying interfacial DMI, a hybrid skyrmion will automatically self-focus onto such a track as its domain angle evolves along the path. Furthermore, using a gate driven voltage controlled magnetic anisotropy, we can control the trajectory of the hybrid skyrmion and its eventual convergence path and lane selection in a racetrack geometry.

preprint2020arXiv

Building Reservoir Computing Hardware Using Low Energy-Barrier Magnetics

Biologically inspired recurrent neural networks, such as reservoir computers are of interest in designing spatio-temporal data processors from a hardware point of view due to the simple learning scheme and deep connections to Kalman filters. In this work we discuss using in-depth simulation studies a way to construct hardware reservoir computers using an analog stochastic neuron cell built from a low energy-barrier magnet based magnetic tunnel junction and a few transistors. This allows us to implement a physical embodiment of the mathematical model of reservoir computers. Compact implementation of reservoir computers using such devices may enable building compact, energy-efficient signal processors for standalone or in-situ machine cognition in edge devices.

preprint2020arXiv

Extrinsic Voltage Control of Carrier Lifetime in Polycrystalline PbSe Mid-wave IR Photo Detectors for Increased Detectivity

Polycrystalline PbSe for mid-wave IR (MWIR) photodetector is an attractive material option due to high operating/ambient temperature operation and relatively easy and cheap fabrication process, making it candidate for low-power and small footprint applications such as internet-of-thing (IoT) sensors and deployment on mobile platforms due to reduced/removed active cooling requirements. However, there are many material challenges that reduce the detectivity of these detectors. In this work, we demonstrate that it is possible to improve upon this metric by externally modulating the lifetime of conducting carriers by application of a back-gate voltage that can control the recombination rate of generated carrier. We first describe the physics of $PbSe$ detectors, the mechanisms underlying carrier transport, and long observed lifetimes of conducting carriers. We then discuss the voltage control of these inverted channels using a back-plane gate resulting in modulation of the lifetime of these carriers. This voltage control represents and extrinsic "knob" through which it may be possible to open a pathway for design of high performance IR photodetectors, as shown in this work.

preprint2020arXiv

Temporal Memory with Magnetic Racetracks

Race logic is a relative timing code that represents information in a wavefront of digital edges on a set of wires in order to accelerate dynamic programming and machine learning algorithms. Skyrmions, bubbles, and domain walls are mobile magnetic configurations (solitons) with applications for Boolean data storage. We propose to use current-induced displacement of these solitons on magnetic racetracks as a native temporal memory for race logic computing. Locally synchronized racetracks can spatially store relative timings of digital edges and provide non-destructive read-out. The linear kinematics of skyrmion motion, the tunability and low-voltage asynchronous operation of the proposed device, and the elimination of any need for constant skyrmion nucleation make these magnetic racetracks a natural memory for low-power, high-throughput race logic applications.

preprint2018arXiv

A Multiscale Materials-to-Systems Modeling of Polycrystalline Pb-Salt Photodetectors

We present a physics based multiscale materials-to-systems model for polycrystalline $PbSe$ photodetectors that connects fundamental material properties to circuit level performance metrics. From experimentally observed film structures and electrical characterization, we first develop a bandstructure model that explains carrier-type inversion and large carrier lifetimes in sensitized films. The unique bandstructure of the photosensitive film causes separation of generated carriers with holes migrating to the inverted $PbSe|PbI_2$ interface, while electrons are trapped in the bulk of the film inter-grain regions. These flows together forms the 2-current theory of photoconduction that quantitatively captures the $I-V$ relationship in these films. To capture the effect of pixel scaling and minority carrier blocking, we develop a model for the metallic contacts with the detector films based on the relative workfunction differences. We also develop detailed models for various physical parameters such as mobility, lifetime, quantum efficiency, noise etc. that connect the detector performance metrics such as responsivity $\mathcal{R}$ and specific detectivity $\mathcal{D^*}$ intimately with material properties and operating conditions. A compact Verilog-A based SPICE model is developed which can be directly combined with advanced digital ROIC cell designs to simulate and optimize high performance FPAs which form a critical component in the rapidly expanding market of self-driven automotive, IoTs, security, and embedded applications.

preprint2016arXiv

Electron optics with ballistic graphene junctions

Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron optics such as negative refraction and perfect (Veselago) lensing. In graphene, the linear dispersion and zero-gap bandstructure admit highly transparent pn junctions by simple electrostatic gating, which cannot be achieved in conventional semiconductors. Moreover ballistic transport over micron length scales at ambient temperature has been realized, providing an ideal platform to realize a new generation of device based on electron lensing. Robust demonstration of these effects, however, has not been forthcoming. Here we employ transverse magnetic focusing to probe propagation across an electrostatically defined graphene junction. We find perfect agreement with the predicted Snells law for electrons, including observation of both positive and negative refraction. Resonant transmission across the pn junction provides a direct measurement of the angle dependent transmission coefficient, and we demonstrate good agreement with theory. Comparing experimental data with simulation reveals the crucial role played by the effective junction width, providing guidance for future device design. Our results pave the way for realizing novel electron optics based on graphene pn junctions.

preprint2015arXiv

Chiral tunneling of topological states: towards the efficient generation of spin current using spin-momentum locking

We show that the interplay between chiral tunneling and spin-momentum locking of helical surface states leads to spin amplification and filtering in a 3D Topological Insulator (TI). Chiral tunneling across a TI pn junction allows normally incident electrons to transmit, while the rest are reflected with their spins flipped due to spin-momentum locking. The net result is that the spin current is enhanced while the dissipative charge current is simultaneously suppressed, leading to an extremely large, gate tunable spin to charge current ratio (~20) at the reflected end. At the transmitted end, the ratio stays close to one and the electrons are completely spin polarized.

preprint2015arXiv

Enhancing phonon flow through 1D interfaces by Impedance Matching

We extend concepts from microwave engineering to thermal interfaces and explore the principles of impedance matching in 1D. The extension is based on the generalization of acoustic impedance to non linear dispersions using the contact broadening matrix $Γ(ω)$, extracted from the phonon self energy. For a single junction, we find that for coherent and incoherent phonons the optimal thermal conductance occurs when the matching $Γ(ω)$ equals the Geometric Mean (GM) of the contact broadenings. This criteria favors the transmission of both low and high frequency phonons by requiring that (1) the low frequency acoustic impedance of the junction matches that of the two contacts by minimizing the sum of interfacial resistances; and (2) the cut-off frequency is near the minimum of the two contacts, thereby reducing the spillage of the states into the tunneling regime. For an ultimately scaled single atom/spring junction, the matching criteria transforms to the arithmetic mean for mass and the harmonic mean for spring constant. The matching can be further improved using a composite graded junction with an exponential varying broadening that functions like a broadband antireflection coating. There is however a trade off as the increased length of the interface brings in additional intrinsic sources of scattering.

preprint2015arXiv

Impedance Matching of Atomic Thermal Interfaces Using Primitive Block Decomposition

We explore the physics of thermal impedance matching at the interface between two dissimilar materials by controlling the properties of a single atomic mass or bond. The maximum thermal current is transmitted between the materials when we are able to decompose the entire heterostructure solely in terms of primitive building blocks of the individual materials. Using this approach, we show that the minimum interfacial thermal resistance arises when the interfacial atomic mass is the arithmetic mean, while the interfacial spring constant is the harmonic mean of its neighbors. The contact induced broadening matrix for the local vibronic spectrum, obtained from the self-energy matrices, generalizes the concept of acoustic impedance to the nonlinear phonon dispersion or the short-wavelength (atomic) limit.

preprint2015arXiv

Modified Dirac Hamiltonian for Efficient Quantum Mechanical Simulations of Micron Sized Devices

Representing massless Dirac fermions on a spatial lattice poses a potential challenge known as the Fermion Doubling problem. Addition of a quadratic term to the Dirac Hamiltonian circumvents this problem. We show that the modified Hamiltonian with the additional term results in a very small Hamiltonian matrix when discretized on a real space square lattice. The resulting Hamiltonian matrix is considerably more efficient for numerical simulations without sacrificing on accuracy and is several orders of magnitude faster than the atomistic tight binding model. Using this Hamiltonian and the Non-Equilibrium Green's Function (NEGF) formalism, we show several transport phenomena in graphene, such as magnetic focusing, chiral tunneling in the ballistic limit and conductivity in the diffusive limit in micron sized graphene devices. The modified Hamiltonian can be used for any system with massless Dirac fermions such as Topological Insulators, opening up a simulation domain that is not readily accessible otherwise.

preprint2015arXiv

Quantum transport at the Dirac point: Mapping out the minimum conductivity from pristine to disordered graphene

The phase space for graphene's minimum conductivity $σ_\mathrm{min}$ is mapped out using Landauer theory modified for scattering using Fermi's Golden Rule, as well as the Non-Equilibrium Green's Function (NEGF) simulation with a Monte Carlo sampling over impurity distributions. The resulting `fan diagram' spans the range from ballistic to diffusive over varying aspect ratios ($W/L$), and bears several surprises. {The device aspect ratio determines how much tunneling (between contacts) is allowed and becomes the dominant factor for the evolution of $σ_{min}$ from ballistic to diffusive regime. We find an increasing (for $W/L>1$) or decreasing ($W/L<1$) trend in $σ_{min}$ vs. impurity density, all converging around $128q^2/π^3h\sim 4q^2/h$ at the dirty limit}. In the diffusive limit, the {conductivity} quasi-saturates due to the precise cancellation between the increase in conducting modes from charge puddles vs the reduction in average transmission from scattering at the Dirac Point. In the clean ballistic limit, the calculated conductivity of the lowest mode shows a surprising absence of Fabry-Pérot oscillations, unlike other materials including bilayer graphene. We argue that the lack of oscillations even at low temperature is a signature of Klein tunneling.

preprint2015arXiv

Role of crystal structure and junction morphology on interface thermal conductance

We argue that the relative thermal conductance between interfaces with different morphologies is controlled by crystal structure through $M_{min}/M_c > 1$, the ratio between the {\it minimum mode} count on either side $M_{min}$, and the {\it conserving modes} $M_c$ that preserve phonon momentum transverse to the interface. Junctions with an added homogenous layer, "uniform", and "abrupt" junctions are limited to $M_c$ while junctions with interfacial disorder, "mixed", exploit the expansion of mode spectrum to $M_{min}$. In our studies with cubic crystals, the largest enhancement of conductance from "abrupt" to "mixed" interfaces seems to be correlated with the emergence of voids in the conserving modes, where $M_c = 0$. Such voids typically arise when the interlayer coupling is weakly dispersive, making the bands shift rigidly with momentum. Interfacial mixing also increases alloy scattering, which reduces conductance in opposition with the mode spectrum expansion. Thus the conductance across a "mixed' junction does not always increase relative to that at a "uniform" interface.

preprint2015arXiv

Subthermal switching with nanomechanical relays

We present a physical model for electronic switching in cantilever based nano-electro-mechanical field effect transistors, focusing on the steepness of its switching curve. We find that the subthreshold swing of the voltage transfer characteristic is governed by two separate considerations - the ability of the charges to correlate together through dipolar interactions and amplify the active torque, versus the active pull-in forces that drive an abrupt phase transition and close the air gap between the tip of the cantilever and the drain. For small sized relays, dipolar and short-range Van Der Waals 'sticking' forces dominate, while for longer cantilevers the capacitive energy acquires a major role. The individual pull-in and pull-out phases demonstrate a remarkably low subthreshold swing driven by the capacitive forces, sharpened further by dipolar correlation. The sharp switching, however, comes at the expense of strong hysteresis as the metastable and stable states interchange along the forward and reverse phases of the voltage scan.

preprint2015arXiv

Transmission Engineering as a route to Subthermal Switching

The physics of low subthreshold devices is interpreted in terms of a gate dependent change in their mode averaged transmission function, in addition to a capacitive shift in their overall mode spectrum. Accordingly, we explore a variety of subthermal switches that alter the bandwidth, bandgap or amplitude of the transmission, and combinations thereof. The Landauer theory for current flow provides a convenient way to derive the subthreshold swing in each case analytically and suggests ways to beat the Boltzmann limit.

preprint2014arXiv

Reducing error rates in straintronic multiferroic dipole-coupled nanomagnetic logic by pulse shaping

Dipole-coupled nanomagnetic logic (NML), where nanomagnets with bistable magnetization states act as binary switches and information is transferred between them via dipole coupling and Bennett clocking, is a potential replacement for conventional transistor logic since magnets dissipate less energy than transistors when they switch in response to the clock. However, dipole-coupled NML is much more error-prone than transistor logic because thermal noise can easily disrupt magnetization dynamics. Here, we study a particularly energy-efficient version of dipole-coupled NML known as straintronic multiferroic logic (SML) where magnets are clocked/switched with electrically generated mechanical strain. By appropriately shaping the voltage pulse that generates strain, the error rate in SML can be reduced to tolerable limits. In this paper, we describe the error probabilities associated with various stress pulse shapes and discuss the trade-off between error rate and switching speed in SML.

preprint2013arXiv

Atomistic deconstruction of current flow in graphene based hetero-junctions

We describe the numerical modeling of current flow in graphene heterojunctions, within the Keldysh Landauer Non-equilibrium Green's function (NEGF) formalism. By implementing a $k$-space approach along the transverse modes, coupled with partial matrix inversion using the Recursive Green's function Algorithm (RGFA), we can simulate on an atomistic scale current flow across devices approaching experimental dimensions. We use the numerical platform to deconstruct current flow in graphene, compare with experimental results on conductance, conductivity and quantum Hall, and deconstruct the physics of electron `optics' and pseudospintronics in graphene $p-n$ junctions. We also demonstrate how to impose exact open boundary conditions along the edges to minimize spurious edge reflections.

preprint2013arXiv

Computing with Non-equilibrium Ratchets

Electronic ratchets transduce local spatial asymmetries into directed currents in the absence of a global drain bias, by rectifying temporal signals that reside far from thermal equilibrium. We show that the absence of a drain bias can provide distinct energy advantages for computation, specifically, reducing static dissipation in a logic circuit. Since the ratchet functions as a gate voltage-controlled current source, it also potentially reduces the dynamic dissipation associated with charging/discharging capacitors. In addition, the unique charging mechanism eliminates timing related constraints on logic inputs, in principle allowing for adiabatic charging. We calculate the ratchet currents in classical and quantum limits, and show how a sequence of ratchets can be cascaded to realize universal Boolean logic.

preprint2013arXiv

Manipulating chiral transmission by gate geometry: switching in graphene with transmission gaps

We explore the chiral transmission of electrons across graphene heterojunctions for electronic switching using gate geometry alone. A sequence of gates is used to collimate and orthogonalize the chiral transmission lobes across multiple junctions, resulting in negligible overall current. The resistance of the device is enhanced by several orders of magnitude by biasing the gates into the bipolar $npn$ doping regime, as the ON state in the near homogeneous $nn^-n$ regime remains highly conductive. The mobility is preserved because the switching involves a transmission gap instead of a structural band-gap that would reduce the number of available channels of conduction. Under certain conditions this transmission gap is highly gate tunable, allowing a subthermal turn-on that beats the Landauer bound on switching energy limiting present day digital electronics.

preprint2012arXiv

A quasi-analytical model for energy-delay-reliability tradeoff studies during write operations in perpendicular STT-RAM cell

One of the biggest challenges the current STT-RAM industry faces is maintaining a high thermal stability while trying to switch within a given voltage pulse and energy cost. In this paper, we present a physics based analytical model that uses a modified Simmons' tunneling expression to capture the spin dependent tunneling in a magnetic tunnel junction(MTJ). Coupled with an analytical derivation of the critical switching current based on the Landau-Lifshitz-Gilbert equation, and the write error rate derived from a solution to the Fokker-Planck equation, this model provides us a quick estimate of the energydelay- reliability tradeoffs in perpendicular STTRAMs due to thermal fluctuations. In other words, the model provides a simple way to calculate the energy consumed during a write operation that ensures a certain error rate and delay time, while being numerically far less intensive than a full-fledged stochastic calculation. We calculate the worst case energy consumption during anti-parallel (AP) to parallel (P) and P to AP switchings and quantify how increasing the anisotropy field HK and lowering the saturation magnetization MS, can significantly reduce the energy consumption. A case study on how manufacturing variations of the MTJ cell can affect the energy consumption and delay is also reported.

preprint2012arXiv

Manifestation of chiral tunneling at a tilted graphene pn junction

Electrons in graphene follow unconventional trajectories at PN junctions, driven by their pseudospintronic degree of freedom. Significant is the prominent angular dependence of transmission, capturing the chiral nature of the electrons and culminating in unit transmission at normal incidence (Klein tunneling). We theoretically show that such chiral tunneling can be directly observed from the junction resistance of a tilted interface probed with separate split gates. The junction resistance is shown to increase with tilt in agreement with recent experimental evidence. The tilt dependence arises because of the misalignment between modal density and the anisotropic transmission lobe oriented perpendicular to the tilt. A critical determinant is the presence of edge scattering events that can completely reverse the angle-dependence. The absence of such reversals in the experiments indicates that these edge effects are not overwhelmingly deleterious, making the premise of transport governed by electron `optics' in graphene an exciting possibility.

preprint2011arXiv

Energy dissipation and switching delay in spin-transfer torque switching of nanomagnets with low-saturation magnetization in the presence of thermal fluctuations

A common ploy to reduce the switching current and energy dissipation in spin-transfer-torque driven magnetization switching of shape-anisotropic single-domain nanomagnets is to employ magnets with low saturation magnetization $M_s$ and high shape-anisotropy. The high shape-anisotropy compensates for low $M_s$ to keep the static switching error rate constant. However, this ploy increases the switching delay, its variance in the presence of thermal noise, and the dynamic switching error rate. Using the stochastic Landau-Lifshitz-Gilbert equation with a random torque emulating thermal noise, we show that pumping some excess spin-polarized current into the nanomagnet during switching will keep the mean switching delay and its variance constant as we reduce $M_s$, while still reducing the energy dissipation significantly.

preprint2011arXiv

Graphene Nanoribbons: from chemistry to circuits

The Y-chart is a powerful tool for understanding the relationship between various views (behavioral, structural, physical) of a system, at different levels of abstraction, from high-level, architecture and circuits, to low-level, devices and materials. We thus use the Y-chart adapted for graphene to guide the chapter and explore the relationship among the various views and levels of abstraction. We start with the innermost level, namely, the structural and chemical view. The edge chemistry of patterned graphene nanoribbons (GNR) lies intermediate between graphene and benzene, and the corresponding strain lifts the degeneracy that otherwise promotes metallicity in bulk graphene. At the same time, roughness at the edges washes out chiral signatures, making the nanoribbon width the principal arbiter of metallicity. The width-dependent conductivity allows the design of a monolithically patterned wide-narrow-wide all graphene interconnect-channel heterostructure. In a three-terminal incarnation, this geometry exhibits superior electrostatics, a correspondingly benign short-channel effect and a reduction in the contact Schottky barrier through covalent bonding. However, the small bandgaps make the devices transparent to band-to-band tunneling. Increasing the gap with width confinement (or other ways to break the sublattice symmetry) is projected to reduce the mobility even for very pure samples, through a fundamental asymptotic constraint on the bandstructure. An analogous trade-off, ultimately between error rate (reliability) and delay (switching speed) can be projected to persist for all graphitic derivatives. Proceeding thus to a higher level, a compact model is presented to capture the complex nanoribbon circuits, culminating in inverter characteristics, design metrics and layout diagrams.

preprint2010arXiv

From low-bias mobility to high-bias current saturation: fundamental trade-offs in graphene based transistors

We describe the fundamental trade-offs in engineering the mobility, current saturation and ON- OFF ratios in graphene transistors. Surprisingly, the trade-offs arise solely from an asymptotic constraint on the high energy bandstructure and independent of scattering processes. This places graphite derivatives (bulk monolayer graphene, uniaxially strained graphene nanoribbons, carbon nanotubes and bilayer graphene) on the same 3-parameter mobility-bandgap-scattering length (μ - Egap -λ) plot, proximal to other semiconductors. In addition to this low-bias trade-off, the high bias current bears signatures of the underlying saturation mechanism, arising through phonon scattering or Γ-point suppressed density of states opening bandgap.

preprint2010arXiv

Monolithically Patterned Wide-Narrow-Wide All-Graphene Devices

We investigate theoretically the performance advantages of all-graphene nanoribbon field-effect transistors (GNRFETs) whose channel and source/drain (contact) regions are patterned monolithically from a two-dimensional single sheet of graphene. In our simulated devices, the source/drain and interconnect regions are composed of wide graphene nanoribbon (GNR) sections that are semimetallic, while the channel regions consist of narrow GNR sections that open semiconducting bandgaps. Our simulation employs a fully atomistic model of the device, contact and interfacial regions using tight-binding theory. The electronic structures are coupled with a self-consistent three-dimensional Poisson's equation to capture the nontrivial contact electrostatics, along with a quantum kinetic formulation of transport based on non-equilibrium Green's functions (NEGF). Although we only consider a specific device geometry, our results establish several general performance advantages of such monolithic devices (besides those related to fabrication and patterning), namely the improved electrostatics, suppressed short-channel effects, and Ohmic contacts at the narrow-to-wide interfaces.

preprint2009arXiv

Coupling optical and electrical gating for electronic read-out of quantum dot dynamics

We explore the coherent transfer of electronic signatures from a strongly correlated, optically gated nanoscale quantum dot to a weakly interacting, electrically backgated microscale channel. In this unique side-coupled `T' geometry for transport, we predict a novel mechanism for detecting Rabi oscillations induced in the dot through quantum, rather than electrostatic means. This detection shows up as a field-tunable split in the Fano lineshape arising due to interference between the dipole coupled dot states and the channel continuum. The split is further modified by the Coulomb interactions within the dot that influence the detuning of the Rabi oscillations. Furthermore, time-resolving the signal we see clear beats when the Rabi frequencies approach the intrinsic Bohr frequencies in the dot. Capturing these coupled dynamics, including memory effects and quantum interference in the channel and the many-body effects in the dot requires coupling a Fock-space master equation for the dot dynamics with the phase-coherent, non-Markovian time-dependent non-equilibrium Green's function (TDNEGF) transport formalism in the channel through a properly evaluated self-energy and a Coulomb integral. The strength of the interactions can further be modulated using a backgate that controls the degree of hybridization and charge polarization at the transistor surface.

preprint2008arXiv

Controlling transistor threshold voltages using molecular dipoles

We develop a theoretical model for how organic molecules can control the electronic and transport properties of an underlying transistor channel to whose surface they are chemically bonded. The influence arises from a combination of long-ranged dipolar electrostatics due to the molecular head-groups, as well as short-ranged charge transfer and interfacial dipole driven by equilibrium band-alignment between the molecular backbone and the reconstructed semiconductor surface atoms.

preprint2004arXiv

Gating of a molecular transistor: Electrostatic and Conformational

We derive a general result that can be used to evaluate and compare the transconductance of different field-effect mechanisms in molecular transistors, both electrostatic and conformational. The electrostatic component leads to the well-known thermal limit in the absence of tunneling. We show that in a standard three-terminal geometry and in the absence of strong electron-phonon coupling, the conformational component can lead to significant advantages only if the molecular dipole moment μis comparable to et_ox, t_ox being the thickness of the oxide. Surprisingly this conclusion is independent of the ``softness'' of the conformational modes involved, or other geometrical factors. Detailed numerical results for specific examples are presented in support of the analytical results.

preprint2002arXiv

Charge transfer in molecular conductors -- oxidation or reduction?

We discuss the nature of charge transfer in molecular conductors upon connecting to two metallic contacts and imposing a voltage bias across them. The sign of the charge transfer (oxidation vs. reduction) depends on the position of the metal Fermi energy with respect to the molecular levels. In addition, the charge transfer depends on the strength of the coupling (chemisorption vs. physisorption) with the contacts. A convenient way to establish the nature and onset of the charge transfer and the corresponding features in the I-V is to draw an energy level diagram for each spin species. Starting from such a level diagram, we argue that transport in the Tour-Reed switching molecules, which consist of a central phenyl ring with a nitroamine redox center, involves the oxidation of a highest occupied molecular orbital (HOMO)-based level.

preprint2002arXiv

First-Principles Analysis of Molecular Conduction Using Quantum Chemistry Software

We present a rigorous and computationally efficient method to do a parameter-free analysis of molecular wires connected to contacts. The self-consistent field approach is coupled with Non-equilibrium Green's Function (NEGF) formalism to describe electronic transport under an applied bias. Standard quantum chemistry software is used to calculate the self-consistent field using density functional theory (DFT). Such close coupling to standard quantum chemistry software not only makes the procedure simple to implement but also makes the relation between the I-V characteristics and the chemistry of the molecule more obvious. We use our method to interpolate between two extreme examples of transport through a molecular wire connected to gold (111) contacts: band conduction in a metallic (gold) nanowire, and resonant conduction through broadened, quasidiscrete levels of a phenyl dithiol molecule. We obtain several quantities of interest like I-V characteristic, electron density and voltage drop along the molecule.

preprint2002arXiv

Insights into molecular conduction from I-V asymmetry

We investigate the origin of asymmetry in the measured current-voltage (I-V) characteristics of molecules with no inherent spatial asymmetry. We establish that such molecules can exhibit asymmetric I-V characteristics due to unequal coupling with the contacts. In contrast with spatially asymmetric molecules, conduction takes place through essentially the same level in both bias directions. The asymmetry arises from a subtle difference in the charging effects, which can only be captured in a self-consistent model for molecular conduction. For HOMO-based conduction, the current is smaller for positive voltage on the stronger contact, while for LUMO conduction, the sense of asymmetry is switched.