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Researcher profile

Jayasimha Atulasimha

Jayasimha Atulasimha contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph

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Published work

7 published item(s)

preprint2022arXiv

Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device

The development of energy-efficient neuromorphic hardware using spintronic devices based on antiferromagnetic (AFM) skyrmion motion on nanotracks has gained considerable interest. Owing to its properties such as robustness against external magnetic fields, negligible stray fields, and zero net topological charge, AFM skyrmions follow straight trajectories that prevent their annihilation at nanoscale racetrack edges. This makes the AFM skyrmions a more favorable candidate over the ferromagnetic (FM) skyrmion for future spintronic applications. This work proposes an AFM skyrmion-based neuron device exhibiting the leaky-integrate-fire (LIF) functionality by exploiting thermal gradient or alternatively perpendicular magnetic anisotropy (PMA) gradient in the nanotrack for leaky behavior by moving the skyrmion in the direction to minimize the system energy. Furthermore, it is shown that the AFM skyrmion couples efficiently to the soft ferromagnetic layer of a magnetic tunnel junction enabling efficient read-out of the skyrmion. The maximum change of 9.2% in tunnel magnetoresistance (TMR) is estimated for detecting the AFM skyrmion. Moreover, the proposed neuron device has the energy dissipation of 4.32 fJ per LIF operation thus, paving the path for developing energy-efficient devices in antiferromagnetic spintronics for neuromorphic computing.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Straintronics: Manipulating the Magnetization of Magnetostrictive Nanomagnets with Strain for Energy-Efficient Applications

The desire to perform information processing, computation, communication, signal generation and related tasks, while dissipating as little energy as possible, has inspired many ideas and paradigms. One of the most powerful among them is the notion of using magnetostrictive nanomagnets as the primitive units of the hardware platforms and manipulating their magnetizations with electrically generated static or time varying mechanical strain to elicit myriad functionalities. This approach has two advantages. First, information can be retained in the devices after powering off since the nanomagnets are non-volatile unlike charge-based devices such as transistors. Second, the energy expended to perform a given task is exceptionally low since it takes very little energy to alter magnetization states with strain. This field is now known as "straintronics", in analogy with electronics, spintronics, valleytronics, etc. We review the recent advances and trends in straintronics, including digital information processing (logic), information storage (memory), domain wall devices operated with strain, control of skyrmions with strain, non-Boolean computing and machine learning with straintronics, signal generation (microwave sources) and communication (ultra-miniaturized acoustic and electromagnetic antennas) implemented with strained nanomagnets, hybrid straintronics-magnonics, and interaction between phonons and magnons in straintronic systems. We identify key challenges and opportunities, and lay out pathways to advance this field to the point where it might become a mainstream technology for energy-efficient systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Acoustic Wave Induced FMR Assisted Spin-Torque Switching of Perpendicular MTJs with Anisotropy Variation

We have investigated Surface Acoustic Wave (SAW) induced ferromagnetic resonance (FMR) assisted Spin Transfer Torque (STT) switching of perpendicular MTJ (p-MTJ) with inhomogeneities using micromagnetic simulations that include the effect of thermal noise. With suitable frequency excitation, the SAW can induce ferromagnetic resonance in magnetostrictive materials, and the magnetization can precesses in a cone with high deflection from the perpendicular direction. With incorporation of inhomogeneity via lateral anisotropy variation as well as room temperature thermal noise, the magnetization precession in different gains can be significantly incoherent. Interestingly, the precession in different grains are found to be in phase, even though the precession amplitude (angle of deflection from the perpendicular direction) vary across grains of different anisotropy. Nevertheless, the high mean deflection angle can complement the STT switching by reducing the STT current significantly; even though the applied stress induced change in anisotropy is much lower than the total anisotropy barrier. This work indicates that SAW assisted switching can improve energy efficiency while being scalable to very small dimensions, which is technologically important for STT-RAM and elucidates the physical mechanism for the potential robustness of this paradigm in realistic scenarios with thermal noise and material inhomogeneity

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Dynamic Skyrmion-Mediated Switching of Perpendicular MTJs: Scaling to 20 nm with Thermal Noise

One method of creating and annihilating skyrmions in confined geometries is to use Voltage-Controlled Magnetic Anisotropy (VCMA) [1, 2, 3]. Previous study shows that robust voltage controlled ferromagnetic reversal from up to down state in the soft layer of a perpendicular Magnetic Tunnel Junction (p-MTJ) can be achieved by creating and subsequently annihilating an intermediate skyrmion state [4] in the presence of room temperature thermal noise and anisotropy variation across grains [4]. However, when scaling to 20 nm, thermal noise can annihilate the skyrmions, for example, by randomly moving the core towards the boundary of the nanostructure. In this work, we study three p-MTJs of different dimensions, particularly lateral dimensions of 100nm, 50nm and 20 nm and investigate the change in switching behavior as the dimension is decreased. Particularly, our focus is to investigate to what extent skyrmion mediated switching scheme can be employed below ~50nm lateral dimensions in the presence of thermal perturbation.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Experimental creation and annihilation of nonvolatile magnetic skyrmions using voltage control of magnetic anisotropy without an external magnetic field

In this work, we utilize voltage controlled magnetic anisotropy (VCMA) to manipulate magnetic skyrmions that are fixed in space. Memory devices based on this strategy can potentially be of smaller footprint and better energy efficiency than current-controlled motion-based skyrmionic devices. To demonstrate VCMA induced manipulation of skyrmions, we fabricate antiferromagnet/ferromagnet/oxide heterostructure films where skyrmions can be stabilized without any external magnetic field due to the presence of exchange bias. These isolated skyrmions were annihilated by applying a voltage pulse that increased PMA. On the other hand, decreasing PMA promoted formation of more skyrmions. Furthermore, skyrmions can be created from chiral domains by increasing PMA of the system. To corroborate our experimental observations, we performed micromagnetic simulation. The proposed method could potentially lead to novel skyrmion-based memory devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Voltage control of domain walls in magnetic nanowires for energy efficient neuromorphic devices

An energy-efficient voltage controlled domain wall device for implementing an artificial neuron and synapse is analyzed using micromagnetic modeling in the presence of room temperature thermal noise. By controlling the domain wall motion utilizing spin transfer or spin orbit torques in association with voltage generated strain control of perpendicular magnetic anisotropy in the presence of Dzyaloshinskii-Moriya interaction, different positions of the domain wall are realized in the free layer of a magnetic tunnel junction to program different synaptic weights. The feasibility of scaling of such devices is assessed in the presence of thermal perturbations that compromise controllability. Additionally, an artificial neuron can be realized by combining this DW device with a CMOS buffer. This provides a possible pathway to realize energy efficient voltage controlled nanomagnetic deep neural networks that can learn in real time.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Energy-efficient switching of nanomagnets for computing: Straintronics and other methodologies

The need for increasingly powerful computing hardware has spawned many ideas stipulating, primarily, the replacement of traditional transistors with alternate "switches" that dissipate miniscule amounts of energy when they switch and provide additional functionality that are beneficial for information processing. An interesting idea that has emerged recently is the notion of using two-phase (piezoelectric/magnetostrictive) multiferroic nanomagnets with bistable (or multi-stable) magnetization states to encode digital information (bits), and switching the magnetization between these states with small voltages (that strain the nanomagnets) to carry out digital information processing. The switching delay is ~1 ns and the energy dissipated in the switching operation can be few to tens of aJ, which is comparable to, or smaller than, the energy dissipated in switching a modern-day transistor. Unlike a transistor, a nanomagnet is "non-volatile", so a nanomagnetic processing unit can store the result of a computation locally without refresh cycles, thereby allowing it to double as both logic and memory. These dual-role elements promise new, robust, energy-efficient, high-speed computing and signal processing architectures (usually non-Boolean and often non-von-Neumann) that can be more powerful, architecturally superior (fewer circuit elements needed to implement a given function) and sometimes faster than their traditional transistor-based counterparts. This topical review covers the important advances in computing and information processing with nanomagnets with emphasis on strain-switched multiferroic nanomagnets acting as non-volatile and energy-efficient switches - a field known as "straintronics". It also outlines key challenges in straintronics.

0 citations0 reviewsNo code linkedOpen access