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K. Nagase

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Published work

9 published item(s)

preprint2016arXiv

Localized NMR Mediated by Electrical-Field-Induced Domain Wall Oscillation in Quantum-Hall-Ferromagnet Nanowire

We present fractional quantum Hall domain walls confined in a gate-defined wire structure. Our experiments utilize spatial oscillation of domain walls driven by radio frequency electric fields to cause nuclear magnetic resonance. The resulting spectra are discussed in terms of both large quadrupole fields created around the wire and hyperfine fields associated with the oscillating domain walls. This provides the experimental fact that the domain walls survive near the confined geometry despite of potential deformation, by which a localized magnetic resonance is allowed in electrical means.

preprint2016arXiv

Simultaneous Measurement of Resistively and Optically Detected Nuclear Magnetic Resonance in the $ν=2/3$ Fractional Quantum Hall Regime

We observe nuclear magnetic resonance (NMR) in the fractional quantum Hall regime at Landau level filling factor $ν=2/3$ from simultaneous measurement of longitudinal resistance and photoluminescence (PL). The dynamic nuclear spin polarization is induced by applying a huge electronic current at the spin phase transition point of $ν=2/3$. The NMR spectra obtained from changes in resistance and PL intensity are qualitatively the same; that is, the Knight shift (spin polarized region) and zero-shift (spin unpolarized region) resonances are observed in both. The observed change in PL intensity is interpreted as a consequence of the trion scattering induced by polarized nuclear spins. We conclude that both detection methods probe almost the same local phenomena.

preprint2015arXiv

Anisotropic nuclear-spin diffusion in double quantum wells

Nuclear-spin diffusion in double quantum wells (QWs) is examined by using dynamic nuclear polarization (DNP) at a Landau level filling factor $ν=2/3$ spin phase transition (SPT). The longitudinal resistance increases during the DNP of one of the two QW (the polarization QW) by means of a large applied current and starts to decrease just after the termination of the DNP. On the other hand, the longitudinal resistance of the other QW (the detection QW) continuously increases for approximately 2h after the termination of the DNP of the polarization QW. It is therefore concluded that the nuclear spins diffuse from the polarization QW to the detection QW. The time evolution of the longitudinal resistance of the polarization QW is explained mainly by the nuclear-spin diffusion in the in-plane direction. In contrast, that of the detection QW manifests much slower nuclear diffusion in the perpendicular direction through the AlGaAs barrier.

preprint2015arXiv

Optically Induced Nuclear Spin Polarization in the Quantum Hall Regime: The Effect of Electron Spin Polarization through Exciton and Trion Excitations

We study nuclear spin polarization in the quantum Hall regime through the optically pumped electron spin polarization in the lowest Landau level. The nuclear spin polarization is measured as a nuclear magnetic field $B_N$ by means of the sensitive resistive detection. We find the dependence of $B_N$ on filling factor unmonotonous. The comprehensive measurements of $B_N$ with the help of the circularly polarized photoluminescence measurements indicate the participation of the photo-excited complexes i.e., the exciton and trion (charged exciton), in nuclear spin polarization. On the basis of a novel estimation method of the equilibrium electron spin polarization, we analyze the experimental data and conclude that the filling factor dependence of $B_N$ is understood by the effect of electron spin polarization through excitons and trions.

preprint2013arXiv

Gate depletion of an InSb two-dimensional electron gas

We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of Al0.1In0.9Sb compared to InSb resulted in a linear, sharp, and non-hysteretic response of the 2DEG density to gate bias in the structure with an Al0.1In0.9Sb surface layer. In contrast, a nonlinear, slow, and hysteretic (nonvolatile-memory-like) response was observed in the structure with an InSb surface layer. The 2DEG with the Al0.1In0.9Sb surface layer was completely depleted by application of a small gate voltage (-0.9 V).

preprint2013arXiv

Optically induced nuclear spin polarization in a single GaAs/AlGaAs quantum well probed by a resistance detection method in the fractional quantum Hall regime

We study the optically pumped nuclear spin polarization in a single GaAs/AlGaAs quantum well in the quantum Hall system. We apply resistive detection via the contact hyperfine interaction, which provides high sensitivity and selectivity, to probe a small amount of polarized nuclear spins in a single well. The properties of the optical nuclear spin polarization are clearly observed. We theoretically discuss the nuclear spin dynamics accompanied with doped electrons to analyze the experimental data. The optical nuclear polarization spectra exhibit electron-spin-resolved lowest Landau level interband transitions. We find that the phonon emission process, which normally assists the optical pumping process, influences the optical nuclear spin polarization. We also discuss that the electron-electron interaction can play an important role in the optical nuclear spin polarization.

preprint2012arXiv

Characterization of InSb quantum wells with atomic layer deposited gate dielectrics

We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample at zero gate voltage (Vg). A good interface between Al2O3 and the top InSb layer ensures that the parallel channel is depleted at negative Vg and the density of two-dimensional electrons in the QW is tuned by Vg with a large ratio of 6.5x1014 m-2V-1 but saturates at large negative Vg. These findings are closely related to layer structures of the QW as suggested by self-consistent Schrodinger-Poisson simulation and two-carrier model.

preprint2011arXiv

Nonlinear magnetic field dependence of spin polarization in high density two-dimensional electron systems

The spin polarization (P) of high-density InSb two-dimensional electron systems (2DESs) has been measured using both parallel and tilted magnetic fields. P is found to exhibit a superlinear increase with the total field B. This P-B nonlinearity results in a difference in spin susceptibility between its real value Xs and Xgm ~ m*g*(m* and g* are the effective mass and g factor, respectively) as routinely used in experiments. We demonstrate that such a P-B nonlinearity originates from the linearly P-dependent g* due to the exchange coupling of electrons rather than from the electron correlation as predicted for the low-density 2DES.

preprint2011arXiv

Resistively detected nuclear magnetic resonance via a single InSb two-dimensional electron gas at high temperature

We report on the demonstration of the resistively detected nuclear magnetic resonance (RDNMR) of a single InSb two-dimensional electron gas (2DEG) at elevated temperatures up to 4 K. The RDNMR signal of 115In in the simplest pseudospin quantum Hall ferromagnet triggered by a large direct current shows a peak-dip line shape, where the nuclear relaxation time T1 at the peak and the dip is different but almost temperature independent. The large Zeeman, cyclotron, and exchange energy scales of the InSb 2DEG contribute to the persistence of the RDNMR signal at high temperatures.