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K. F. Yang

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Published work

5 published item(s)

preprint2013arXiv

Gate depletion of an InSb two-dimensional electron gas

We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of Al0.1In0.9Sb compared to InSb resulted in a linear, sharp, and non-hysteretic response of the 2DEG density to gate bias in the structure with an Al0.1In0.9Sb surface layer. In contrast, a nonlinear, slow, and hysteretic (nonvolatile-memory-like) response was observed in the structure with an InSb surface layer. The 2DEG with the Al0.1In0.9Sb surface layer was completely depleted by application of a small gate voltage (-0.9 V).

preprint2012arXiv

Characterization of InSb quantum wells with atomic layer deposited gate dielectrics

We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample at zero gate voltage (Vg). A good interface between Al2O3 and the top InSb layer ensures that the parallel channel is depleted at negative Vg and the density of two-dimensional electrons in the QW is tuned by Vg with a large ratio of 6.5x1014 m-2V-1 but saturates at large negative Vg. These findings are closely related to layer structures of the QW as suggested by self-consistent Schrodinger-Poisson simulation and two-carrier model.

preprint2011arXiv

Nonlinear magnetic field dependence of spin polarization in high density two-dimensional electron systems

The spin polarization (P) of high-density InSb two-dimensional electron systems (2DESs) has been measured using both parallel and tilted magnetic fields. P is found to exhibit a superlinear increase with the total field B. This P-B nonlinearity results in a difference in spin susceptibility between its real value Xs and Xgm ~ m*g*(m* and g* are the effective mass and g factor, respectively) as routinely used in experiments. We demonstrate that such a P-B nonlinearity originates from the linearly P-dependent g* due to the exchange coupling of electrons rather than from the electron correlation as predicted for the low-density 2DES.

preprint2011arXiv

Resistively detected nuclear magnetic resonance via a single InSb two-dimensional electron gas at high temperature

We report on the demonstration of the resistively detected nuclear magnetic resonance (RDNMR) of a single InSb two-dimensional electron gas (2DEG) at elevated temperatures up to 4 K. The RDNMR signal of 115In in the simplest pseudospin quantum Hall ferromagnet triggered by a large direct current shows a peak-dip line shape, where the nuclear relaxation time T1 at the peak and the dip is different but almost temperature independent. The large Zeeman, cyclotron, and exchange energy scales of the InSb 2DEG contribute to the persistence of the RDNMR signal at high temperatures.

preprint2010arXiv

Dynamic Nuclear Polarization and Nuclear Magnetic Resonance in the Simplest Pseudospin Quantum Hall Ferromagnet

We present dynamic nuclear polarization (DNP) in the simplest pseudospin quantum Hall ferromagnet (QHF) of an InSb two-dimensional electron gas with a large g factor using tilted magnetic fields. The DNP-induced amplitude change of a resistance spike of the QHF at large current enables observation of the resistively detected nuclear magnetic resonance of the high nuclear spin isotope 115In with nine quadrupole splittings. Our results demonstrate the importance of domain structures in the DNP process. The nuclear spin relaxation time T1 in this QHF was relatively short (~ 120 s), and almost temperature independent.