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K. M. Shen

K. M. Shen contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Gapped collective charge excitations and interlayer hopping in cuprate superconductors

We use resonant inelastic x-ray scattering (RIXS) to probe the propagation of plasmons in the electron-doped cuprate superconductor Sr$_{0.9}$La$_{0.1}$CuO$_2$ (SLCO). We detect a plasmon gap of $\sim$~120 meV at the two-dimensional Brillouin zone center, indicating that low-energy plasmons in SLCO are not strictly acoustic. The plasmon dispersion, including the gap, is accurately captured by layered $t$-$J$-$V$ model calculations. A similar analysis performed on recent RIXS data from other cuprates suggests that the plasmon gap is generic and its size is related to the magnitude of the interlayer hopping $t_z$. Our work signifies the three-dimensionality of the charge dynamics in layered cuprates and provides a new method to determine $t_z$.

preprint2022arXiv

Magnetic Excitations in Square Lattice Iridates: Contrast between Ba$_2$IrO$_4$ and Sr$_2$IrO$_4$

We report a resonant inelastic x-ray scattering (RIXS) investigation of ultra-thin epitaxial films of Ba$_2$IrO$_4$, and compare their low energy magnetic and spin-orbit excitations to those of their sister compound Sr$_2$IrO$_4$. Due to the 180$^\circ$ Ir-O-Ir bond, the bandwidth of the magnon and spin-orbiton is significantly larger in Ba$_2$IrO$_4$, making it difficult to describe these two types of excitations as separate well-defined quasiparticles. Both types of excitations are found to be quite sensitive to the effect of epitaxial strain. In addition, we find that the d-level inversion observed in Sr$_2$IrO$_4$ is absent in Ba$_2$IrO$_4$, as predicted in recent theoretical studies. Our results illustrate that the magnetic properties of Ba$_2$IrO$_4$ are substantially different from those of Sr$_2$IrO$_4$, suggesting that these materials need to be examined more carefully with electron itinerancy taken into account.

preprint2021arXiv

A single-crystal alkali antimonide photocathode: high efficiency in the ultra-thin limit

The properties of photoemission electron sources determine the ultimate performance of a wide class of electron accelerators and photon detectors. To date, all high-efficiency visible-light photocathode materials are either polycrystalline or exhibit intrinsic surface disorder, both of which limit emitted electron beam brightness. In this letter we demonstrate the synthesis of epitaxial thin films of Cs$_3$Sb on 3C-SiC (001) using molecular-beam epitaxy. Films as thin as 4 nm have quantum efficiencies exceeding 2\% at 532 nm. We also find that epitaxial films have an order of magnitude larger quantum efficiency at 650 nm than comparable polycrystalline films on Si. Additionally, these films permit angle-resolved photoemission spectroscopy measurements of the electronic structure, which are found to be in good agreement with theory. Epitaxial films open the door to dramatic brightness enhancements via increased efficiency near threshold, reduced surface disorder, and the possibility of engineering new photoemission functionality at the level of single atomic layers.