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D. G. Schlom

D. G. Schlom appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-concond-mat.mes-hallcond-mat.otherphysics.acc-phphysics.app-ph

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Published work

30 published item(s)

preprint2023arXiv

Epitaxial NaxCoO2 Thin Films via Molecular-Beam Epitaxy and Topotactic Transformation: a Model System for Sodium Intercalation

Renewable energy sources such as solar and wind are critical to combatting global warming. Nevertheless, their intermittent energy generation requires the development of large-scale grid energy storage, in contrast to the on-demand generation of coal-based power plants. Sodium-ion batteries offer a promising potential technology, yet because sodium ions are larger than lithium ions, sodium-ion intercalation results in more drastic structural rearrangements. An improved understanding of structural dynamics and ionic diffusion pathways is crucial to developing more durable sodium-ion batteries. Here we synthesize epitaxial NaxCoO2 by using molecular-beam epitaxy and topotactic transformation. In the synthesized epitaxial films, the CoO2 layers are canted with respect to the film surface, allowing electrochemical extraction of sodium ions, which we confirm via ex-situ x-ray diffraction. We anticipate the epitaxial thin films reported here to enable future operando studies of interfaces, subtle lattice distortions, and microstructure during electrochemical cycling.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Gapped collective charge excitations and interlayer hopping in cuprate superconductors

We use resonant inelastic x-ray scattering (RIXS) to probe the propagation of plasmons in the electron-doped cuprate superconductor Sr$_{0.9}$La$_{0.1}$CuO$_2$ (SLCO). We detect a plasmon gap of $\sim$~120 meV at the two-dimensional Brillouin zone center, indicating that low-energy plasmons in SLCO are not strictly acoustic. The plasmon dispersion, including the gap, is accurately captured by layered $t$-$J$-$V$ model calculations. A similar analysis performed on recent RIXS data from other cuprates suggests that the plasmon gap is generic and its size is related to the magnitude of the interlayer hopping $t_z$. Our work signifies the three-dimensionality of the charge dynamics in layered cuprates and provides a new method to determine $t_z$.

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preprint2022arXiv

Magnetic Excitations in Square Lattice Iridates: Contrast between Ba$_2$IrO$_4$ and Sr$_2$IrO$_4$

We report a resonant inelastic x-ray scattering (RIXS) investigation of ultra-thin epitaxial films of Ba$_2$IrO$_4$, and compare their low energy magnetic and spin-orbit excitations to those of their sister compound Sr$_2$IrO$_4$. Due to the 180$^\circ$ Ir-O-Ir bond, the bandwidth of the magnon and spin-orbiton is significantly larger in Ba$_2$IrO$_4$, making it difficult to describe these two types of excitations as separate well-defined quasiparticles. Both types of excitations are found to be quite sensitive to the effect of epitaxial strain. In addition, we find that the d-level inversion observed in Sr$_2$IrO$_4$ is absent in Ba$_2$IrO$_4$, as predicted in recent theoretical studies. Our results illustrate that the magnetic properties of Ba$_2$IrO$_4$ are substantially different from those of Sr$_2$IrO$_4$, suggesting that these materials need to be examined more carefully with electron itinerancy taken into account.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

A single-crystal alkali antimonide photocathode: high efficiency in the ultra-thin limit

The properties of photoemission electron sources determine the ultimate performance of a wide class of electron accelerators and photon detectors. To date, all high-efficiency visible-light photocathode materials are either polycrystalline or exhibit intrinsic surface disorder, both of which limit emitted electron beam brightness. In this letter we demonstrate the synthesis of epitaxial thin films of Cs$_3$Sb on 3C-SiC (001) using molecular-beam epitaxy. Films as thin as 4 nm have quantum efficiencies exceeding 2\% at 532 nm. We also find that epitaxial films have an order of magnitude larger quantum efficiency at 650 nm than comparable polycrystalline films on Si. Additionally, these films permit angle-resolved photoemission spectroscopy measurements of the electronic structure, which are found to be in good agreement with theory. Epitaxial films open the door to dramatic brightness enhancements via increased efficiency near threshold, reduced surface disorder, and the possibility of engineering new photoemission functionality at the level of single atomic layers.

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preprint2020arXiv

Multiferroic behavior confined by symmetry in EuTiO3 films

We have elucidated the spin, lattice, charge and orbital coupling mechanism underlying the multiferroic character in tensile strained EuTiO3 films. Symmetry determined by oxygen octahedral tilting shapes the hybridization between the Eu 4f and Ti 3d orbitals and this inhibits predicted Ti displacement proper ferroelectricity. Instead, phonon softening emerges at low temperatures within the pseudo-cube (110) plane, orthogonal to the anticipated ferroelectric polarization symmetry. Additionally, the magnetic anisotropy is determined by orbital distortion through hybridization between the Ti 3d and typically isotropic Eu2+ 4f. This unique scenario demonstrates the critical role symmetry plays in the coupling of order parameters defining multiferroic behaviour.

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preprint2019arXiv

Magnetoelectric Coupling by Giant Piezoelectric Tensor Design

Strain-coupled magnetoelectric (ME) phenomena in piezoelectric / ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain is utilized to manipulate the magnetization of the ferromagnetic film. In-plane magnetization rotation with an electric field across the film thickness has been challenging due to the virtual elimination of in-plane piezoelectric strain by substrate clamping, and to the requirement of anisotropic in-plane strain in two-terminal devices. We have overcome both of these limitations by fabricating lithographically patterned devices with a piezoelectric membrane on a soft substrate platform, in which in-plane strain is freely generated, and a patterned edge constraint that transforms the nominally isotropic piezoelectric strain into the required uniaxial strain. We fabricated 500 nm thick, (001) oriented [Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$]$_{0.7}$-[PbTiO$_3$]$_{0.3}$ (PMN-PT) unclamped piezoelectric membranes with ferromagnetic Ni overlayers. Guided by analytical and numerical continuum elastic calculations, we designed and fabricated two-terminal devices exhibiting Ni magnetization rotation in response to an electric field across the PMN-PT. Similar membrane heterostructures could be used to apply designed strain patterns to many other materials systems to control properties such as superconductivity, band topology, conductivity, and optical response.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Single crystal growth and characterization of Ba$_2$ScNbO$_6$ -- a novel substrate for BaSnO$_3$ films

Large single crystals of the double-perovskite Ba$_2$ScNbO$_6$ were grown from the melt for the first time. With a lattice parameter at room temperature of 4.11672(1) Å, this cubic double-perovskite has an excellent lattice match to BaSnO$_3$, PbZr$_{0.9}$Ti$_{0.1}$O$_3$, LaInO$_3$, BiScO$_3$, and other perovskites of contemporary interest. Differential thermal analysis showed that Ba$_2$ScNbO$_6$ melts at 2165$\pm$30°C in an inert atmosphere. Competitive grain growth was visualized by energy dispersive Laue mapping. X-ray diffraction rocking curve measurements revealed full width at half maximum values between 21 and 33 arcsec for 002 and 004 reflections. The crystals were sufficiently large to yield (100)-oriented single-crystal substrates with surface areas as large as 10 x 10 mm$^2$.

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preprint2016arXiv

An invisible non-volatile solid-state memory

Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected using routinely available probes or manipulated by external magnetic perturbations. Antiferromagnetic resistors feature unrivalled robustness but the stable resistive states reported scarcely differ by more than a fraction of a percent at room temperature. Here we show that the metamagnetic (ferromagnetic to antiferromagnetic) transition in intermetallic Fe0.50Rh0.50 can be electrically controlled in a magnetoelectric heterostructure to reveal or cloak a given ferromagnetic state. From an aligned ferromagnetic phase, magnetic states are frozen into the antiferromagnetic phase by the application of an electric field, thus eliminating the stray field and likewise making it insensitive to external magnetic field. Application of a reverse electric field reverts the antiferromagnetic state to the original ferromagnetic state. Our work demonstrates the building blocks of a feasible, extremely stable, non-volatile, electrically addressable, low-energy dissipation, magnetoelectric multiferroic memory.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy (ALL-Laser MBE) significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With ALL-Laser MBE we have produced conducting LaAlO3/SrTiO3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Low-damping sub-10-nm thin films of lutetium iron garnet grown by molecular-beam epitaxy

We analyze the structural and magnetic characteristics of (111)-oriented lutetium iron garnet (Lu$_3$Fe$_5$O$_{12}$) films grown by molecular-beam epitaxy, for films as thin as 2.8 nm. Thickness-dependent measurements of the in- and out-of-plane ferromagnetic resonance allow us to quantify the effects of two-magnon scattering, along with the surface anisotropy and the saturation magnetization. We achieve effective damping coefficients of $11.1(9) \times 10^{-4}$ for 5.3 nm films and $32(3) \times 10^{-4}$ for 2.8 nm films, among the lowest values reported to date for any insulating ferrimagnetic sample of comparable thickness.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Strain Control of Fermiology and Many-Body Interactions in Two-Dimensional Ruthenates

Here we demonstrate how the Fermi surface topology and quantum many-body interactions can be manipulated via epitaxial strain in the spin-triplet superconductor Sr$_2$RuO$_4$ and its isoelectronic counterpart Ba$_2$RuO$_4$ using oxide molecular beam epitaxy (MBE), \emph{in situ} angle-resolved photoemission spectroscopy (ARPES), and transport measurements. Near the topological transition of the $γ$ Fermi surface sheet, we observe clear signatures of critical fluctuations, while the quasiparticle mass enhancement is found to increase rapidly and monotonically with increasing Ru-O bond distance. Our work demonstrates the possibilities for using epitaxial strain as a disorder-free means of manipulating emergent properties, many-body interactions, and potentially the superconductivity in correlated materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Tuning a Strain-Induced Orbital Selective Mott Transition in Epitaxial VO$_2$

We present evidence of strain-induced modulation of electron correlation effects and increased orbital anisotropy in the rutile phase of epitaxial VO$_2$/TiO$_2$ films from hard x-ray photoelectron spectroscopy and soft V L-edge x-ray absorption spectroscopy, respectively. By using the U(1) slave spin formalism, we further argue that the observed anisotropic correlation effects can be understood by a model of orbital selective Mott transition at a filling that is non-integer, but close to the half-filling. Because the overlaps of wave functions between $d$ orbitals are modified by the strain, orbitally-dependent renormalizations of the bandwidths and the crystal fields occur with the application of strain. These renormalizations generally result in different occupation numbers in different orbitals. We find that if the system has a non-integer filling number near the half-filling such as for VO$_2$, certain orbitals could reach an occupation number closer to half-filling under the strain, resulting in a strong reduction in the quasiparticle weight $Z_α$ of that orbital. Moreover, an orbital selective Mott transition, defined as the case with $Z_α = 0$ in some, but not all orbitals, could be accessed by epitaxial strain-engineering of correlated electron systems.

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preprint2015arXiv

Formation and observation of a quasi-two-dimensional $d_{xy}$ electron liquid in epitaxially stabilized Sr$_{2-x}$La$_{x}$TiO$_{4}$ thin films

We report the formation and observation of an electron liquid in Sr$_{2-x}$La$_{x}$TiO$_4$, the quasi-two-dimensional counterpart of SrTiO$_3$, through reactive molecular-beam epitaxy and {\it in situ} angle-resolved photoemission spectroscopy. The lowest lying states are found to be comprised of Ti 3$d_{xy}$ orbitals, analogous to the LaAlO$_3$/SrTiO$_3$ interface and exhibit unusually broad features characterized by quantized energy levels and a reduced Luttinger volume. Using model calculations, we explain these characteristics through an interplay of disorder and electron-phonon coupling acting co-operatively at similar energy scales, which provides a possible mechanism for explaining the low free carrier concentrations observed at various oxide heterostructures such as the LaAlO$_3$/SrTiO$_3$ interface.

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preprint2015arXiv

Interplay of Spin-Orbit Interactions, Dimensionality, and Octahedral Rotations in Semimetallic SrIrO$_3$

We employ reactive molecular-beam epitaxy to synthesize the metastable perovskite SrIrO$_{3}$ and utilize {\it in situ} angle-resolved photoemission to reveal its electronic structure as an exotic narrow-band semimetal. We discover remarkably narrow bands which originate from a confluence of strong spin-orbit interactions, dimensionality, and both in- and out-of-plane IrO$_6$ octahedral rotations. The partial occupation of numerous bands with strongly mixed orbital characters signals the breakdown of the single-band Mott picture that characterizes its insulating two-dimensional counterpart, Sr$_{2}$IrO$_{4}$, illustrating the power of structure-property relations for manipulating the subtle balance between spin-orbit interactions and electron-electron interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Quantifying electronic correlation strength in a complex oxide: a combined DMFT and ARPES study of LaNiO$_3$

The electronic correlation strength is a basic quantity that characterizes the physical properties of materials such as transition metal oxides. Determining correlation strengths requires both precise definitions and a careful comparison between experiment and theory. In this paper we define the correlation strength via the magnitude of the electron self-energy near the Fermi level. For the case of LaNiO$_3$, we obtain both the experimental and theoretical mass enhancements $m^\star/m$ by considering high resolution angle-resolved photoemission spectroscopy (ARPES) measurements and density functional + dynamical mean field theory (DFT + DMFT) calculations. We use valence-band photoemission data to constrain the free parameters in the theory, and demonstrate a quantitative agreement between the experiment and theory when both the realistic crystal structure and strong electronic correlations are taken into account. These results provide a benchmark for the accuracy of the DFT+DMFT theoretical approach, and can serve as a test case when considering other complex materials. By establishing the level of accuracy of the theory, this work also will enable better quantitative predictions when engineering new emergent properties in nickelate heterostructures.

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preprint2015arXiv

Spin and lattice excitations of a BiFeO3 thin film and ceramics

We present a comprehensive study of polar and magnetic excitations in BiFeO3 ceramics and a thin film epitaxially grown on an orthorhombic (110) TbScO3 substrate. Infrared reflectivity spectroscopy was performed at temperatures from 5 to 900 K for the ceramics and below room temperature for the thin film. All 13 polar phonons allowed by the factor-group analysis were observed in theceramic samples. The thin-film spectra revealed 12 phonon modes only and an additional weak excitation, probably of spin origin. On heating towards the ferroelectric phase transition near 1100 K, some phonons soften, leading to an increase in the static permittivity. In the ceramics, terahertz transmission spectra show five low-energy magnetic excitations including two which were not previously known to be infrared active; at 5 K, their frequencies are 53 and 56 cm-1. Heating induces softening of all magnetic modes. At a temperature of 5 K, applying an external magnetic field of up to 7 T irreversibly alters the intensities of some of these modes. The frequencies of the observed spin excitations provide support for the recently developed complex model of magnetic interactions in BiFeO3 (R.S. Fishman, Phys. Rev. B 87, 224419 (2013)). The simultaneous infrared and Raman activity of the spin excitations is consistent with their assignment to electromagnons.

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preprint2015arXiv

Stoichiometry Dependence of Potential Screening at La$_{(1-δ)}$Al$_{(1+δ)}$O$_3$/SrTiO$_3$ Interfaces

Hard x-ray photoelectron spectroscopy (HAXPES) and variable kinetic energy x-ray photoelectron spectroscopy (VKE-XPS) analyses have been performed on 10 unit cell La$_{(1-δ)}$Al$_{(1+δ)}$O$_3$ films, with La:Al ratios of 1.1, 1.0, and 0.9, deposited on SrTiO$_3$. Of the three films, only the Al-rich film was known to have a conductive interface. VKE-XPS, coupled with maximum entropy analysis, shows significant differences in the compositional depth profile between the Al-rich, the La-rich, and stoichiometric films; significant La enrichment at the interface is observed in the La-rich and stoichiometric films, while the Al-rich shows little to no intermixing. Additionally, the La-rich and stoichiometric films show a high concentration of Al at the surface, which is not observed in the Al-rich film. HAXPES valence band (VB) analysis shows a broadening of the VB for the Al-rich sample relative to the stoichiometric and La-rich samples, which have insulating interfaces. This broadening is consistent with an electric field across the Al-rich film. These results are consistent with a defect driven electronic reconstruction.

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preprint2014arXiv

Correlated vs. conventional insulating behavior in the Jeff=1/2 vs. 3/2 bands in the layered iridate Ba2IrO4

We employ molecular beam epitaxy to stabilize Ba2IrO4 thin films and utilize in situ angle-resolved photoemission spectroscopy to investigate the evolution of its electronic structure through the Neel temperature TN. Our measurements indicate that dispersions of the relativistic Jeff=1/2 and 3/2 bands exhibit an unusual dichotomy in their behavior through the Neel transition. Although the charge gap survives into the paramagnetic state, only the Jeff=1/2 state exhibits a strong temperature dependence and its gap softens with increasing temperature approaching TN, while the nearly fully occupied Jeff=3/2 state which remains nearby in energy exhibits negligible changes with temperature.

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preprint2014arXiv

Epitaxial Growth of VO$_{2}$ by Periodic Annealing

We report the growth of ultrathin VO$_{2}$ films on rutile TiO$_{2}$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO$_{2}$ via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.

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preprint2013arXiv

LaAlO3 stoichiometry found key to electron liquid formation at LaAlO3/SrTiO3 interfaces

Emergent phenomena, including superconductivity and magnetism, found in the two-dimensional electron liquid (2-DEL) at the interface between the insulators LaAlO3 and SrTiO3 distinguish this rich system from conventional two-dimensional electron gases at compound semiconductor interfaces. The origin of this 2-DEL, however, is highly debated with focus on the role of defects in the SrTiO3 while the LaAlO3 has been assumed perfect. Our experiments and first principles calculations show that the cation stoichiometry of the nominal LaAlO3 layer is key to 2-DEL formation: only Al-rich LaAlO3 results in a 2-DEL. While extrinsic defects including oxygen deficiency are known to render LaAlO3/SrTiO3 samples conducting, our results show that in the absence of such extrinsic defects, an interface 2-DEL can form. Its origin is consistent with an intrinsic electronic reconstruction occurring to counteract a polarization catastrophe. This work provides a roadmap for identifying other interfaces where emergent behaviors await discovery.

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preprint2013arXiv

Localized excited charge carriers generate ultrafast inhomogeneous strain in the multiferroic BiFeO$_3$

We apply ultrafast X-ray diffraction with femtosecond temporal resolution to monitor the lattice dynamics in a thin film of multiferroic BiFeO$_3$ after above-bandgap photoexcitation. The sound-velocity limited evolution of the observed lattice strains indicates a quasi-instantaneous photoinduced stress which decays on a nanosecond time scale. This stress exhibits an inhomogeneous spatial profile evidenced by the broadening of the Bragg peak. These new data require substantial modification of existing models of photogenerated stresses in BiFeO$_3$: the relevant excited charge carriers must remain localized to be consistent with the data.

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preprint2013arXiv

Quasiparticle Mass Enhancement and Temperature Dependence of the Electronic Structure of Ferromagnetic SrRuO3 Thin Films

We report high-resolution angle-resolved photoemission studies of epitaxial thin films of the correlated 4d transition metal oxide ferromagnet SrRuO3. The Fermi surface in the ferromagnetic state consists of well-defined Landau quasiparticles, exhibiting strong coupling to low-energy bosonic modes which contributes to the large effective masses observed by transport and thermodynamic measurements. Upon warming the material through its Curie temperature, we observe a substantial decrease in quasiparticle coherence, but negligible changes in the ferromagnetic exchange splitting, suggesting that local moments play an important role in the ferromagnetism in SrRuO3.

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preprint2013arXiv

Structural control of magnetic anisotropy in a strain driven multiferroic EuTiO3 thin film

Octahedral distortion plays a key role in engineering the physical properties of heterostructures composed of perovskite oxides. We observe a strong in-plane uniaxial magnetic anisotropy in a strain-enabled multiferroic EuTiO3 thin film epitaxially grown on a (110)o DyScO3 substrate. First principles calculations show that the magnetic anisotropy is closely correlated with the uniaxial TiO6 octahedral tilting and the ferroelectric polarization of the film, indicating potential strong magnetoelectric coupling in the strain-engineered multiferroic system.

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preprint2012arXiv

Magnetodielectric coupling and phonon properties of compressively strained EuTiO3 thin films deposited on LSAT

Compressively strained epitaxial (001) EuTiO3 thin films of tetragonal symmetry have been deposited on (001) (LaAlO3)_0.29-(SrAl_{1/2}Ta_{1/2}O3)_0.71 (LSAT) substrates by reactive molecular-beam epitaxy. Enhancement of the Neel temperature by 1 K with 0.9% compressive strain was revealed. The polar phonons ofthe films have been investigated as a function of temperature and magnetic field by means of infrared reflectance spectroscopy. All three infrared active phonons show strongly stiffened frequencies compared to bulk EuTiO3 in accordance with first principles calculations. The phonon frequencies exhibit gradual softening on cooling leading to an increase in static permittivity. A new polar phonon with frequency near the TO1 soft mode was detected below 150 K. The new mode coupled with the TO1 mode was assigned as the optical phonon from the Brillouin zone edge, which is activated in infrared spectra due to an antiferrodistortive phase transition and due to simultaneous presence of polar and/or magnetic nanoclusters. In the antiferromagnetic phase we have observed a remarkable softening of the lowest-frequency polar phonon under an applied magnetic field, which qualitatively agrees with first principles calculations. This demonstrates the strong spin-phonon coupling in EuTiO3, which is responsible for the pronounced dependence of its static permittivity on magnetic field in the antiferromagnetic phase.

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preprint2012arXiv

Temperature dependence of the electronic structure and Fermi-surface reconstruction of Eu(1-x)Gd(x)O through the ferromagnetic metal-insulator transition

We present angle-resolved photoemission spectroscopy of Eu(1-x)Gd(x)O through the ferromagnetic metal-insulator transition. In the ferromagnetic phase, we observe Fermi surface pockets at the Brillouin zone boundary, consistent with density functional theory, which predicts a half metal. Upon warming into the paramagnetic state, our results reveal a strong momentum-dependent evolution of the electronic structure, where the metallic states at the zone boundary are replaced by pseudogapped states at the Brillouin zone center due to the absence of magnetic long-range order of the Eu 4f moments.

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preprint2010arXiv

Optical Properties of (SrMnO3)n/(LaMnO3)2n superlattices: an insulator-to-metal transition observed in the absence of disorder

We measure the optical conductivity of (SrMnO3)n/(LaMnO3)2n superlattices (SL) for n=1,3,5, and 8 and 10 < T < 400 K. Data show a T-dependent insulator to metal transition (IMT) for n \leq 3, driven by the softening of a polaronic mid-infrared band. At n = 5 that softening is incomplete, while at the largest-period n=8 compound the MIR band is independent of T and the SL remains insulating. One can thus first observe the IMT in a manganite system in the absence of the disorder due to chemical doping. Unsuccessful reconstruction of the SL optical properties from those of the original bulk materials suggests that (SrMnO3)n/(LaMnO3)2n heterostructures give rise to a novel electronic state.

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preprint2009arXiv

Evolution of magnetic phases and orbital occupation in (SrMnO3)n/(LaMnO3)2n superlattices

The magnetic and electronic modifications induced at the interfaces in (SrMnO$_{3}$)$_{n}$/(LaMnO$_{3}$)$_{2n}$ superlattices have been investigated by linear and circular magnetic dichroism in the Mn L$_{2,3}$ x-ray absorption spectra. Together with theoretical calculations, our data demonstrate that the charge redistribution across interfaces favors in-plane ferromagnetic (FM) order and $e_{g}(x^{2}-y^{2})$ orbital occupation, in agreement with the average strain. Far from interfaces, inside LaMnO$_3$, electron localization and local strain favor antiferromagnetism (AFM) and $e_{g}(3z^{2}-r^{2})$ orbital occupation. For $n=1$ the high density of interfacial planes ultimately leads to dominant FM order forcing the residual AFM phase to be in-plane too, while for $n \geq 5$ the FM layers are separated by AFM regions having out-of-plane spin orientation.

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preprint2009arXiv

Spin-Charge-Lattice Coupling through Resonant Multi-Magnon Excitations in Multiferroic BiFeO3

Spin-charge-lattice coupling mediated by multi-magnon processes is demonstrated in multiferroic BiFeO3. Experimental evidence of two and three magnons excitations as well as multimagnon coupling at electronic energy scales and high temperatures are reported. Temperature dependent Raman experiments show up to five resonant enhancements of the 2-magnon excitation below the Neel temperature. These are shown to be collective interactions between on-site Fe d-d electronic resonance, phonons and multimagnons

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preprint2006arXiv

Multiferroic Domain Dynamics in Strained Strontium Titanate

Multiferroicity can be induced in strontium titanate by applying biaxial strain, resulting in the coexistence of both ferroelectric and antiferrodistortive domains. The magnitude and sign of the strain imposed on the lattice by design can be used to tune the phase transitions and interactions between these two phenomena. Using optical second harmonic generation, we report a transition from centrosymmetric 4/mmm phase to ferroelectric mm2, followed by an antiferrodistortive transition to a coupled ferroelastic-ferroelectric mm2 phase in a strontium titanate thin film strained in biaxial tension by 0.94%. The results agree well with theoretical first principles and phase-field predictions. Direct imaging of domains arising from the ferroelectric phase transition, and its switching under electric fields is demonstrated using piezoelectric force microscopy. Nonlinear optics combined with phase-field modeling is used to show that the dominant multiferroic domain switching mechanism is through coupled 90 degree ferroelectric-ferroelastic domain wall motion. More broadly, these studies of coexisting ferroelectric (polar) and antiferrodistortive rotation (axial) phenomena could have relevance to multiferroics with coexisting ferroelectric (polar) and magnetic (axial) phenomena.

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preprint2005arXiv

Structural and transport properties of epitaxial NaxCoO2 thin films

We have studied structural and transport properties of epitaxial NaxCoO2 thin films on (0001) sapphire substrate prepared by topotaxially converting an epitaxial Co3O4 film to NaxCoO2 with annealing in Na vapor. The films are c axis oriented and in-plane aligned with [10 1 0] NaxCoO2 rotated by 30 degrees from [10 1 0] sapphire. Different Na vapor pressures during the annealing resulted in films with different Na concentrations, which showed distinct transport properties.

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