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Frank H. L. Koppens

Frank H. L. Koppens appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallphysics.opticscond-mat.mtrl-sciphysics.app-phquant-phphysics.ins-detcond-mat.str-elcond-mat.supr-con

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Published work

35 published item(s)

preprint2022arXiv

$WSe_2$ as transparent top gate for near-field experiments

Independent control of carrier density and out-of-plane displacement field is essential for accessing novel phenomena in two-dimensional material heterostructures. While this is achieved with independent top and bottom metallic gate electrodes in transport experiments, it remains a challenge for near-field optical studies as the top electrode interferes with the optical path. Here, we systematically characterize the requirements for a material to be used as top-gate electrode, and demonstrate experimentally that few-layer WSe_2 can be used as a transparent, ambipolar top gate electrode in infrared near-field microscopy. We perform nano-imaging of plasmons in a bilayer graphene heterostructure and tune the plasmon wavelength using a trilayer WSe_2 gate, achieving a density modulation amplitude exceeding 2 10^{12} cm^{-2}. Moreover, the observed ambipolar gate-voltage response allows to extract the energy gap of WSe_2 yielding a value of 1.05 eV. Our results will provide an additional tuning knob to cryogenic near-field experiments on emerging phenomena in two-dimensional materials and moiré material heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Evolution and reflection of ray-like excitations in hyperbolic dispersion media

Light in hyperbolic dispersion media is known to exhibit an intriguing ray-like character. However, detailed understanding of ray-like excitations in hyperbolic media is surprisingly limited, mostly based on numerical simulations. In our work, we analytically describe the formation of multimodal ray-like excitations in a planar slab of hyperbolic media. We demonstrate that these rays have an approximately Lorentzian profile and that they propagate in a zig-zagged manner. These rays acquire phase in a discrete fashion at every internal reflection inside the slab and broaden at a rate which is proportional to the rate of optical absorption. Moreover, based on this description, we reveal a unique reflection mechnanism where destructive interefernce between the different modes composing the ray can improve the strength of reflection at an interface between a dielectric and a metalic substrate. This reflection mechanism is highly asymmetric, occuring only when the ray is incident from the side of the dielectric substrate to the side of the metallic substrate, and the strength of reflection is shown to be directly related to the width of the ray.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Giant enhancement of third-harmonic generation in graphene-metal heterostructures

Nonlinear nanophotonics leverages engineered nanostructures to funnel light into small volumes and intensify nonlinear optical processes with spectral and spatial control. Due to its intrinsically large and electrically tunable nonlinear optical response, graphene is an especially promising nanomaterial for nonlinear optoelectronic applications. Here we report on exceptionally strong optical nonlinearities in graphene-insulator-metal heterostructures, demonstrating an enhancement by three orders of magnitude in the third-harmonic signal compared to bare graphene. Furthermore, by increasing the graphene Fermi energy through an external gate voltage, we find that graphene plasmons mediate the optical nonlinearity and modify the third-harmonic signal. Our findings show that graphene-insulator-metal is a promising heterostructure for optically-controlled and electrically-tunable nano-optoelectronic components.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

High-harmonic generation enhancement with graphene heterostructures

We investigate high-harmonic generation in graphene heterostructures consisting of metallic nanoribbons separated from a graphene sheet by either a few-nanometer layer of aluminum oxide or an atomic monolayer of hexagonal boron nitride. The nanoribbons amplify the near-field at the graphene layer relative to the externally applied pumping, thus allowing us to observe third- and fifth-harmonic generation in the carbon monolayer at modest pump powers in the mid-infrared. We study the dependence of the nonlinear signals on the ribbon width and spacer thickness, as well as pump power and polarization, and demonstrate enhancement factors relative to bare graphene reaching 1600 and 4100 for third- and fifth-harmonic generation, respectively. Our work supports the use of graphene heterostructures to selectively enhance specific nonlinear processes of interest, an essential capability for the design of nanoscale nonlinear devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Hysteresis-Free High Mobility Graphene Encapsulated in Tungsten Disulfide

High mobility is a crucial requirement for a large variety of electronic device applications. The state-of-the-art for high quality graphene devices is based on heterostructures made with graphene encapsulated in $>80\,$nm-thick flakes of hexagonal boron nitride (hBN). Unfortunately, scaling up multilayer hBN while precisely controlling the number of layers remains an elusive challenge, resulting in a rough material unable to enhance the mobility of graphene. This leads to the pursuit of alternative, scalable materials, which can be simultaneously used as substrate and encapsulant for graphene. Tungsten disulfide (WS$_2$) is a transition metal dichalcogenide, which was successfully grown in large ($\sim$mm-size) multi-layers by chemical vapour deposition. However, the resistance \textit{vs} gate voltage characteristics when gating graphene through WS$_2$ exhibit largely hysteretic shifts of the charge neutrality point (CNP) in the order of $Δn\sim$2.6$\cdot$10$^{11}$ cm$^{-2}$, hindering the use of WS$_2$ as a reliable encapsulant. The hysteresis originates due to the charge traps from sulfur vacancies present in WS$_2$. In this work, we report for the first time the use of WS$_2$ as a substrate and the overcoming of hysteresis issues by chemically treating WS$_2$ with a super-acid, which passivates these vacancies and strips the surface from contaminants. The hysteresis is significantly reduced below the noise level by at least a factor five (to $Δn<$5$\cdot$10$^{10}$ cm$^{-2}$) and, simultaneously, the room-temperature mobility of WS$_2$-encapsulated graphene is as high as $\sim$6.2$\cdot$10$^{4}$ cm$^{-2}$V$^{-1}$s$^{-1}$ at a carrier density $n$ $\sim$1$\cdot$ 10$^{12}$ cm$^{-2}$. Our results promote WS$_2$ to a valid alternative to hBN as encapsulant for high-performance graphene devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Tunable and giant valley-selective Hall effect in gapped bilayer graphene

Berry curvature is analogous to magnetic field but in momentum space and is commonly present in materials with non-trivial quantum geometry. It endows Bloch electrons with transverse anomalous velocities to produce Hall-like currents even in the absence of a magnetic field. We report the direct observation of in situ tunable valley-selective Hall effect (VSHE), where inversion symmetry, and thus the geometric phase of electrons, is controllable by an out-of-plane electric field. We use high-quality bilayer graphene with an intrinsic and tunable bandgap, illuminated by circularly polarized mid-infrared light and confirm that the observed Hall voltage arises from an optically-induced valley population. Compared with molybdenum disulfide, we find orders of magnitude larger VSHE, attributed to the inverse scaling of the Berry curvature with bandgap. By monitoring the valley-selective Hall conductivity, we study Berry curvature's evolution with bandgap. This in situ manipulation of VSHE paves the way for topological and quantum geometric opto-electronic devices, such as more robust switches and detectors.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Harnessing Ultraconfined Graphene Plasmons to Probe the Electrodynamics of Superconductors

We show that the Higgs mode of a superconductor, which is usually challenging to observe by far-field optics, can be made clearly visible using near-field optics by harnessing ultraconfined graphene plasmons. As near-field sources we investigate two examples: graphene plasmons and quantum emitters. In both cases the coupling to the Higgs mode is clearly visible. In the case of the graphene plasmons, the coupling is signaled by a clear anticrossing stemming from the interaction of graphene plasmons with the Higgs mode of the superconductor. In the case of the quantum emitters, the Higgs mode is observable through the Purcell effect. When combining the superconductor, graphene, and the quantum emitters, a number of experimental knobs become available for unveiling and studying the electrodynamics of superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Hot-Carrier Cooling in High-Quality Graphene is Intrinsically Limited by Optical Phonons

Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the different mechanisms that contribute to hot-carrier cooling. In particular, the intrinsic cooling mechanism that ultimately limits the cooling dynamics remains an open question. Here, we address this question by studying two technologically relevant systems, consisting of high-quality graphene with a mobility >10,000 cm$^2$V$^{-1}$s$^{-1}$ and environments that do not efficiently take up electronic heat from graphene: WSe$_2$-encapsulated graphene and suspended graphene. We study the cooling dynamics of these two high-quality graphene systems using ultrafast pump-probe spectroscopy at room temperature. Cooling via disorder-assisted acoustic phonon scattering and out-of-plane heat transfer to the environment is relatively inefficient in these systems, predicting a cooling time of tens of picoseconds. However, we observe much faster cooling, on a timescale of a few picoseconds. We attribute this to an intrinsic cooling mechanism, where carriers in the hot-carrier distribution with enough kinetic energy emit optical phonons. During phonon emission, the electronic system continuously re-thermalizes, re-creating carriers with enough energy to emit optical phonons. We develop an analytical model that explains the observed dynamics, where cooling is eventually limited by optical-to-acoustic phonon coupling. These fundamental insights into the intrinsic cooling mechanism of hot carriers in graphene will play a key role in guiding the development of graphene-based optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Imaging vibrations of locally gated, electromechanical few layer graphene resonators with a moving vacuum enclosure

Imaging the vibrations of nanomechanical resonators means measuring their flexural mode shapes from the dependence of their frequency response on in-plane position. Applied to two-dimensional resonators, this technique provides a wealth of information on the mechanical properties of atomically-thin membranes. We present a simple and robust system to image the vibrations of few layer graphene (FLG) resonators at room temperature and in vacuum with an in-plane displacement precision of $\approx0.20$ $μ$m. It consists of a sturdy vacuum enclosure mounted on a three-axis micropositioning stage and designed for free space optical measurements of vibrations. The system is equipped with ultra-flexible radio frequency waveguides to electrically actuate resonators. With it we characterize the lowest frequency mode of a FLG resonator by measuring its frequency response as a function of position on the membrane. The resonator is suspended over a nanofabricated local gate electrode acting both as a mirror and as a capacitor plate to actuate vibrations at radio frequencies. From these measurements, we estimate the ratio of thermal expansion coefficient to thermal conductivity of the membrane, and we measure the effective mass of the lowest frequency mode. We complement our study with a globally gated resonator and image its first three vibration modes. There, we find that folds in the membrane locally suppress vibrations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Coherent characterisation of a single molecule in a photonic black box

Extinction spectroscopy is a powerful tool for demonstrating the coupling of a single quantum emitter to a photonic structure. However, it can be challenging in all but the simplest of geometries to deduce an accurate value of the coupling efficiency from the measured spectrum. Here we develop a theoretical framework to deduce the coupling efficiency from the measured transmission and reflection spectra without precise knowledge of the photonic environment. We then consider the case of a waveguide interrupted by a transverse cut in which an emitter is placed. We apply that theory to a silicon nitride waveguide interrupted by a gap filled with anthracene that is doped with dibenzoterrylene molecules. We describe the fabrication of these devices, and experimentally characterise the waveguide coupling of a single molecule in the gap.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Far-field Excitation of Single Graphene Plasmon Cavities with Ultra-compressed Mode-volumes

Acoustic-graphene-plasmons (AGPs) are highly confined electromagnetic modes, carrying large momentum and low loss in the mid-infrared/Terahertz spectra. Owing to their ability to confine light to extremely small dimensions, they bear great potential for ultra-strong light-matter interactions in this long wavelength regime, where molecular fingerprints reside. However, until now AGPs have been restricted to micron-scale areas, reducing their confinement potential by several orders-of-magnitude. Here, by utilizing a new type of graphene-based magnetic-resonance, we realize single, nanometric-scale AGP cavities, reaching record-breaking mode-volume confinement factors of $\thicksim5\cdot10^{-10}$. This AGP cavity acts as a mid-infrared nanoantenna, which is efficiently excited from the far-field, and electrically tuneble over an ultra-broadband spectrum. Our approach provides a new platform for studying ultra-strong-coupling phenomena, such as chemical manipulation via vibrational-strong-coupling, and a path to efficient detectors and sensors, in this challenging spectral range.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Fast electrical modulation of strong near-field interactions between erbium emitters and graphene

Combining the quantum optical properties of single-photon emitters with the strong near-field interactions available in nanophotonic and plasmonic systems is a powerful way of creating quantum manipulation and metrological functionalities. The ability to actively and dynamically modulate emitter-environment interactions is of particular interest in this regard. While thermal, mechanical and optical modulation have been demonstrated, electrical modulation has remained an outstanding challenge. Here we realize fast, all-electrical modulation of the near-field interactions between a nanolayer of erbium emitters and graphene, by in-situ tuning the Fermi energy of graphene. We demonstrate strong interactions with a >1,000-fold increased decay rate for 25% of the emitters, and electrically modulate these interactions with frequencies up to 300 kHz - orders of magnitude faster than the emitters radiative decay (100 Hz). This constitutes an enabling platform for integrated quantum technologies, opening routes to quantum entanglement generation by collective plasmon emission or photon emission with controlled waveform.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Grating-graphene metamaterial as a platform for terahertz nonlinear photonics

Nonlinear optics is an increasingly important field for scientific and technological applications, owing to its relevance and potential for optical and optoelectronic technologies. Currently, there is an active search for suitable nonlinear material systems with efficient conversion and small material footprint. Ideally, the material system should allow for chip-integration and room-temperature operation. Two-dimensional materials are highly interesting in this regard. Particularly promising is graphene, which has demonstrated an exceptionally large nonlinearity in the terahertz regime. Yet, the light-matter interaction length in two-dimensional materials is inherently minimal, thus limiting the overall nonlinear-optical conversion efficiency. Here we overcome this challenge using a metamaterial platform that combines graphene with a photonic grating structure providing field enhancement. We measure terahertz third-harmonic generation in this metamaterial and obtain an effective third-order nonlinear susceptibility with a magnitude as large as 3$\cdot$10$^{-8}$m$^2$/V$^2$, or 21 esu, for a fundamental frequency of 0.7 THz. This nonlinearity is 50 times larger than what we obtain for graphene without grating. Such an enhancement corresponds to third-harmonic signal with an intensity that is three orders of magnitude larger due to the grating. Moreover, we demonstrate a field conversion efficiency for the third harmonic of up to $\sim$1% using a moderate field strength of $\sim$30 kV/cm. Finally we show that harmonics beyond the third are enhanced even more strongly, allowing us to observe signatures of up to the 9$^{\rm th}$ harmonic. Grating-graphene metamaterials thus constitute an outstanding platform for commercially viable, CMOS compatible, room temperature, chip-integrated, THz nonlinear conversion applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Narrow Line Width Quantum Emitters in an Electron-Beam-Shaped Polymer

Solid-state single photon sources (SPSs) with narrow line width play an important role in many leading quantum technologies. Within the wide range of SPSs studied to date, single fluorescent molecules hosted in organic crystals stand out as bright, photostable SPSs with a lifetime-limited optical resonance at cryogenic temperatures. Furthermore, recent results have demonstrated that photostability and narrow line widths are still observed from single molecules hosted in a nanocrystalline environment, which paves the way for their integration with photonic circuitry. Polymers offer a compatible matrix for embedding nanocrystals and provide a versatile yet low-cost approach for making nanophotonic structures on chip that guide light and enhance coupling to nanoscale emitters. Here, we present a deterministic nanostructuring technique based on electron-beam lithography for shaping polymers with embedded single molecules. Our approach provides a direct means of structuring the nanoscale environment of narrow line width emitters while preserving their emission properties.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Optical and plasmonic properties of twisted bilayer graphene: Impact of interlayer tunneling asymmetry and ground-state charge inhomogeneity

We present a theoretical study of the local optical conductivity, plasmon spectra, and thermoelectric properties of twisted bilayer graphene (TBG) at different filling factors and twist angles $θ$. Our calculations are based on the electronic band structures obtained from a continuum model that has two tunable parameters, $u_0$ and $u_1$, which parametrize the intra-sublattice inter-layer and inter-sublattice inter-layer tunneling rate, respectively. In this Article we focus on two key aspects: i) we study the dependence of our results on the value of $u_0$, exploring the whole range $0\leq u_0\leq u_1$; ii) we take into account effects arising from the intrinsic charge density inhomogeneity present in TBG, by calculating the band structures within the self-consistent Hartree approximation. At zero filling factor, i.e. at the charge neutrality point, the optical conductivity is quite sensitive to the value of $u_0$ and twist angle, whereas the charge inhomogeneity brings about only modest corrections. On the other hand, away from zero filling, static screening dominates and the optical conductivity is appreciably affected by the charge inhomogeneity, the largest effects being seen on the intra-band contribution to it. These findings are also reflected by the plasmonic spectra. We compare our results with existing ones in the literature, where effects i) and ii) above have not been studied systematically. As natural byproducts of our calculations, we obtain the Drude weight and Seebeck coefficient. The former displays an enhanced particle-hole asymmetry stemming from the inhomogeneous ground-state charge distribution. The latter is shown to display a broad sign-changing feature even at low temperatures ($\approx 5~{\rm K}$) due to the reduced slope of the bands, as compared to those of single-layer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides

We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene-polymer-graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p-n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity 8 x 10$^{10}$ $cm^{-2}$ at the charge neutrality point, and a large Seebeck coefficient 140 $μ$V K$^{-1}$, enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

High quality-factor mechanical resonators based on WSe2 monolayers

Suspended monolayer transition metal-dichalcogenides (TMD) are membranes that combine ultra-low mass and exceptional optical properties, making them intriguing materials for opto-mechanical applications. However, the low measured quality factor of TMD resonators has been a roadblock so far. Here, we report an ultrasensitive optical readout of monolayer TMD resonators that allows us to reveal their mechanical properties at cryogenic temperatures. We find that the quality factor of monolayer WSe2 resonators greatly increases below room temperature, reaching values as high as 1.6E^4 at liquid nitrogen temperature and 4.7E^4 at liquid helium temperature. This surpasses the quality factor of monolayer graphene resonators with similar surface areas. Upon cooling the resonator, the resonant frequency increases significantly due to the thermal contraction of the WSe2 lattice. These measurements allow us to experimentally study the thermal expansion coefficient of WSe2 monolayers for the first time. High Q-factors are also found in resonators based on MoS2 and MoSe2 monolayers. The high quality-factor found in this work opens new possibilities for coupling mechanical vibrational states to two-dimensional excitons, valley pseudospins, and single quantum emitters, and for quantum opto-mechanical experiments based on the Casimir interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Mid-infrared pyro-resistive graphene detector on LiNbO3

Mid-infrared (mid-IR) photo-detection has been recently growing in importance because of its multiple applications, including vibrational spectroscopy and thermal imaging. We propose and demonstrate a novel pyro-resistive photo-detection platform that combines a ferroelectric substrate (a z-cut LiNbO3 crystal) and a graphene layer transferred on top of its surface with electrical connections. Upon strong light absorption in the LiNbO3 substrate and the subsequent temperature increase, via the pyroelectric effect, polarization (bound) charges form at the crystal surface. These causes doping into graphene which in turn changes its carrier density and conductivity. In this way, by monitoring the graphene electrical resistance one can measure the incident optical power. . Detectivities of about 10^5 cm sqrt(Hz)/W in the 6 to 10 microns wavelength region are demonstrated.We explain the underlying physical mechanism of the pyro-resistive photo-detection and propose a model that reproduces accurately the experimental results. We also show that up to two orders of magnitude larger detectivity can be achieved by optimising the geometry and operating in vacuum, thus opening the path to a new class of mid-IR photo-detectors that can challenge classical HgCdTe devices, especially in real applications where cooling is to be avoided and low cost is crucial.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Phonon-mediated mid-infrared photoresponse of graphene

The photoresponse of graphene at mid-infrared frequencies is of high technological interest and is governed by fundamentally different underlying physics than the photoresponse at visible frequencies, as the energy of the photons and substrate phonons involved have comparable energies. Here we perform a spectrally resolved study of the graphene photoresponse for mid-infrared light by measuring spatially resolved photocurrent over a broad frequency range (1000-1600 cm$^{-1}$). We unveil the different mechanisms that give rise to photocurrent generation in graphene on a polar substrate. In particular, we find an enhancement of the photoresponse when the light excites bulk or surface phonons of the SiO$_2$ substrate. This work paves the way for the development of graphene-based mid-infrared thermal sensing technology.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Photo-thermionic effect in vertical graphene heterostructures

Finding alternative optoelectronic mechanisms that overcome the limitations of conventional semiconductor devices is paramount for detecting and harvesting low-energy photons. A highly promising approach is to drive a current from the thermal energy added to the free-electron bath as a result of light absorption. Successful implementation of this strategy requires a broadband absorber where carriers interact among themselves more strongly than with phonons, as well as energy-selective contacts to extract the excess electronic heat. Here we show that graphene-WSe2-graphene heterostructure devices offer this possibility through the photo-thermionic effect: the absorbed photon energy in graphene is efficiently transferred to the electron bath, leading to a thermalized hot carrier distribution. Carriers with energy higher than the Schottky barrier between graphene and WSe2 can be emitted over the barrier, thus creating photocurrent. We experimentally demonstrate that the photo-thermionic effect enables detection of sub-bandgap photons, while being size-scalable, electrically tunable, broadband and ultrafast.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Picosecond photoresponse in van der Waals heterostructures

Two-dimensional (2D) crystals, such as graphene and transition metal dichalcogenides (TMDs), present a collection of unique and complementary optoelectronic properties. Assembling different 2D materials in vertical heterostructures enables the combination of these properties in one device, thus creating multi-functional optoelectronic systems with superior performance. Here we demonstrate that graphene/WSe2/graphene heterostructures ally the high photodetection efficiency of TMDs with a picosecond photoresponse comparable to that of graphene, thereby optimizing both speed and efficiency in a single photodetector. We follow in time the extraction of photoexcited carriers in these devices using time-resolved photocurrent measurements and demonstrate a photoresponse time as short as 5.5 ps, which we tune by applying a bias and by varying the TMD layer thickness. Our study provides direct insight into the physical processes governing the detection speed and quantum efficiency of these van der Waals (vdW) heterostuctures, such as out-of-plane carrier drift and recombination. The observation and understanding of ultrafast and efficient photodetection demonstrate the potential of hybrid TMD-based heterostructures as a platform for future optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Thermoelectric detection of propagating plasmons in graphene

Controlling, detecting and generating propagating plasmons by all-electrical means is at the heart of on-chip nano-optical processing. Graphene carries long-lived plasmons that are extremely confined and controllable by electrostatic fields, however electrical detection of propagating plasmons in graphene has not yet been realized. Here, we present an all-graphene mid-infrared plasmon detector, where a single graphene sheet serves simultaneously as the plasmonic medium and detector. Rather than achieving detection via added optoelectronic materials, as is typically done in other plasmonic systems, our device converts the natural decay product of the plasmon---electronic heat---directly into a voltage through the thermoelectric effect. We employ two local gates to fully tune the thermoelectric and plasmonic behaviour of the graphene. High-resolution real-space photocurrent maps are used to investigate the plasmon propagation and interference, decay, thermal diffusion, and thermoelectric generation.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Tuning ultrafast electron thermalization pathways in a van der Waals heterostructure

Ultrafast electron thermalization - the process leading to Auger recombination, carrier multiplication via impact ionization and hot carrier luminescence - occurs when optically excited electrons in a material undergo rapid electron-electron scattering to redistribute excess energy and reach electronic thermal equilibrium. Due to extremely short time and length scales, the measurement and manipulation of electron thermalization in nanoscale devices remains challenging even with the most advanced ultrafast laser techniques. Here, we overcome this challenge by leveraging the atomic thinness of two-dimensional van der Waals (vdW) materials in order to introduce a highly tunable electron transfer pathway that directly competes with electron thermalization. We realize this scheme in a graphene-boron nitride-graphene (G-BN-G) vdW heterostructure, through which optically excited carriers are transported from one graphene layer to the other. By applying an interlayer bias voltage or varying the excitation photon energy, interlayer carrier transport can be controlled to occur faster or slower than the intralayer scattering events, thus effectively tuning the electron thermalization pathways in graphene. Our findings, which demonstrate a novel means to probe and directly modulate electron energy transport in nanoscale materials, represent an important step toward designing and implementing novel optoelectronic and energy-harvesting devices with tailored microscopic properties.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electro-mechanical control of an optical emitter using graphene

Active, in situ control of light at the nanoscale remains a challenge in modern physics and in nanophotonics in particular. A promising approach is to take advantage of the technological maturity of nano-electromechanical systems (NEMS) and to combine it with on-chip optics. However, in scaling down the dimensions of such integrated devices, the coupling of a NEMS to optical fields becomes challenging. Despite recent progress in nano-optomechanical coupling, active control of optical fields at the nanoscale has not been achieved with an on-chip NEMS thus far. Here, we show a new type of hybrid system, which consists of an on-chip graphene NEMS suspended a few tens of nanometers above nitrogen-vacancy centres (NVC), which are stable single photon emitters embedded in nano-diamonds. Electromechanical control of the photons emitted by the NVC is provided by electrostatic tuning of the graphene NEMS position, which is transduced to a modulation of NVC emission intensity. The optomechanical coupling between the graphene displacement and the NVC emission is based on near-field dipole-dipole interaction. This class of optomechanical coupling increases strongly for smaller distances, making it suitable for devices with nanoscale dimensions. These achievements hold promise for the selective control of single-emitter arrays on chip, optical spectroscopy of individual nano-objects, integrated optomechanical information processing and quantum optomechanics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Generation of photovoltage in graphene on a femtosecond time scale through efficient carrier heating

Graphene is a promising material for ultrafast and broadband photodetection. Earlier studies addressed the general operation of graphene-based photo-thermoelectric devices, and the switching speed, which is limited by the charge carrier cooling time, on the order of picoseconds. However, the generation of the photovoltage could occur at a much faster time scale, as it is associated with the carrier heating time. Here, we measure the photovoltage generation time and find it to be faster than 50 femtoseconds. As a proof-of-principle application of this ultrafast photodetector, we use graphene to directly measure, electrically, the pulse duration of a sub-50 femtosecond laser pulse. The observation that carrier heating is ultrafast suggests that energy from absorbed photons can be efficiently transferred to carrier heat. To study this, we examine the spectral response and find a constant spectral responsivity between 500 and 1500 nm. This is consistent with efficient electron heating. These results are promising for ultrafast femtosecond and broadband photodetector applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cut-off at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Near-field photocurrent nanoscopy on bare and encapsulated graphene

Opto-electronic devices utilizing graphene have already demonstrated unique capabilities, which are much more difficult to realize with conventional technologies. However, the requirements in terms of material quality and uniformity are very demanding. A major roadblock towards high-performance devices are the nanoscale variations of graphene properties, which strongly impact the macroscopic device behaviour. Here, we present and apply opto-electronic nanoscopy to measure locally both the optical and electronic properties of graphene devices. This is achieved by combining scanning near-field infrared nanoscopy with electrical device read-out, allowing infrared photocurrent mapping at length scales of tens of nanometers. We apply this technique to study the impact of edges and grain boundaries on spatial carrier density profiles and local thermoelectric properties. Moreover, we show that the technique can also be applied to encapsulated graphene/hexagonal boron nitride (h-BN) devices, where we observe strong charge build-up near the edges, and also address a device solution to this problem. The technique enables nanoscale characterization for a broad range of common graphene devices without the need of special device architectures or invasive graphene treatment.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Highly confined low-loss plasmons in graphene-boron nitride heterostructures

Graphene plasmons were predicted to possess ultra-strong field confinement and very low damping at the same time, enabling new classes of devices for deep subwavelength metamaterials, single-photon nonlinearities, extraordinarily strong light-matter interactions and nano-optoelectronic switches. While all of these great prospects require low damping, thus far strong plasmon damping was observed, with both impurity scattering and many-body effects in graphene proposed as possible explanations. With the advent of van der Waals heterostructures, new methods have been developed to integrate graphene with other atomically flat materials. In this letter we exploit near-field microscopy to image propagating plasmons in high quality graphene encapsulated between two films of hexagonal boron nitride (h-BN). We determine dispersion and particularly plasmon damping in real space. We find unprecedented low plasmon damping combined with strong field confinement, and identify the main damping channels as intrinsic thermal phonons in the graphene and dielectric losses in the h-BN. The observation and in-depth understanding of low plasmon damping is the key for the development of graphene nano-photonic and nano-optoelectronic devices.

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preprint2014arXiv

Plasmon losses due to electron-phonon scattering: the case of graphene encapsulated in hexagonal Boron Nitride

Graphene sheets encapsulated between hexagonal Boron Nitride (hBN) slabs display superb electronic properties due to very limited scattering from extrinsic disorder sources such as Coulomb impurities and corrugations. Such samples are therefore expected to be ideal platforms for highly-tunable low-loss plasmonics in a wide spectral range. In this Article we present a theory of collective electron density oscillations in a graphene sheet encapsulated between two hBN semi-infinite slabs (hBN/G/hBN). Graphene plasmons hybridize with hBN optical phonons forming hybrid plasmon-phonon (HPP) modes. We focus on scattering of these modes against graphene's acoustic phonons and hBN optical phonons, two sources of scattering that are expected to play a key role in hBN/G/hBN stacks. We find that at room temperature the scattering against graphene's acoustic phonons is the dominant limiting factor for hBN/G/hBN stacks, yielding theoretical inverse damping ratios of hybrid plasmon-phonon modes of the order of $50$-$60$, with a weak dependence on carrier density and a strong dependence on illumination frequency. We confirm that the plasmon lifetime is not directly correlated with the mobility: in fact, it can be anti-correlated.

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preprint2014arXiv

Ultrafast electronic read-out of diamond NV centers coupled to graphene

Nonradiative transfer processes are often regarded as loss channels for an optical emitter1, since they are inherently difficult to be experimentally accessed. Recently, it has been shown that emitters, such as fluorophores and nitrogen vacancy centers in diamond, can exhibit a strong nonradiative energy transfer to graphene. So far, the energy of the transferred electronic excitations has been considered to be lost within the electron bath of the graphene. Here, we demonstrate that the trans-ferred excitations can be read-out by detecting corresponding currents with picosecond time resolution. We electrically detect the spin of nitrogen vacancy centers in diamond electronically and con-trol the nonradiative transfer to graphene by electron spin resonance. Our results open the avenue for incorporating nitrogen vacancy centers as spin qubits into ultrafast electronic circuits and for harvesting non-radiative transfer processes electronically.

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preprint2012arXiv

Photo-excited Carrier Dynamics and Impact Excitation Cascade in Graphene

Photo-excitation in solids can trigger a cascade in which multiple particle-hole excitations are generated. We analyze the carrier multiplication cascade of impact excitation processes in graphene and show that the number of pair excitations has a strong dependence on doping, which makes carrier multiplication gate-tunable. We also predict that the number of excited pairs as well as the characteristic time of the cascade scale linearly with photo-excitation energy. These dependences, as well as sharply peaked angular distribution of pair excitations, provide clear experimental signatures of carrier multiplication.

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preprint2011arXiv

Graphene plasmonics: A platform for strong light-matter interaction

Graphene plasmons provide a suitable alternative to noble-metal plasmons because they exhibit much larger confinement and relatively long propagation distances, with the advantage of being highly tunable via electrostatic gating. We report strong light- matter interaction assisted by graphene plasmons, and in particular, we predict unprecedented high decay rates of quantum emitters in the proximity of a carbon sheet, large vacuum Rabi splitting and Purcell factors, and extinction cross sections exceeding the geometrical area in graphene ribbons and nanometer-sized disks. Our results provide the basis for the emerging and potentially far-reaching field of graphene plasmonics, offering an ideal platform for cavity quantum electrodynamics and supporting the possibility of single-molecule, single-plasmon devices.

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preprint2011arXiv

Hybrid graphene-quantum dot phototransistors with ultrahigh gain

Graphene has emerged as a novel platform for opto-electronic applications and photodetector, but the inefficient conversion from light to current has so far been an important roadblock. The main challenge has been to increase the light absorption efficiency and to provide a gain mechanism where multiple charge carriers are created from one incident photon. Here, we take advantage of the strong light absorption in quantum dots and the two-dimensionality and high mobility of graphene to merge these materials into a hybrid system for photodetection with extremely high sensitivity. Exploiting charge transfer between the two materials, we realize for the first time, graphene-based phototransistors that show ultrahigh gain of 10^8 and ten orders of magnitude larger responsivity compared to pristine graphene photodetectors. These hybrid graphene-quantum dot phototransistors exhibit gate-tunable sensitivity, spectral selectivity from the shortwave infrared to the visible, and can be integrated with current circuit technologies.

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preprint2011arXiv

Total light absorption in graphene

We demonstrate that 100% light absorption can take place in a single patterned sheet of doped graphene. General analysis shows that a planar array of small lossy particles exhibits full absorption under critical-coupling conditions provided the cross section of each individual particle is comparable to the area of the lattice unit-cell. Specifically, arrays of doped graphene nanodisks display full absorption when supported on a substrate under total internal reflection, and also when lying on a dielectric layer coating a metal. Our results are relevant for infrared light detectors and sources, which can be made tunable via electrostatic doping of graphene.

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preprint2009arXiv

Near-field Electrical Detection of Optical Plasmons and Single Plasmon Sources

Photonic circuits can be much faster than their electronic counterparts, but they are difficult to miniaturize below the optical wavelength scale. Nanoscale photonic circuits based on surface plasmon polaritons (SPs) are a promising solution to this problem because they can localize light below the diffraction limit. However, there is a general tradeoff between the localization of an SP and the efficiency with which it can be detected with conventional far-field optics. Here we describe a new all-electrical SP detection technique based on the near-field coupling between guided plasmons and a nanowire field-effect transistor. We use the technique to electrically detect the plasmon emission from an individual colloidal quantum dot coupled to an SP waveguide. Our detectors are both nanoscale and highly efficient (0.1 electrons/plasmon), and a plasmonic gating effect can be used to amplify the signal even higher (up to 50 electrons/plasmon). These results enable new on-chip optical sensing applications and are a key step towards "dark" optoplasmonic nanocircuits in which SPs can be generated, manipulated, and detected without involving far-field radiation.

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