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Source author record

Junghyo Nah

Junghyo Nah appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elNetworking and Internet Architecturequant-ph

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Published work

6 published item(s)

preprint2020arXiv

Wireless Avionics Intra-Communications: A Survey of Benefits, Challenges, and Solutions

In the aeronautics industry, wireless avionics intra-communications have a tremendous potential to improve efficiency and flexibility while reducing the weight, fuel consumption, and maintenance costs over traditional wired avionics systems. This survey starts with an overview of the major benefits and opportunities in the deployment of wireless technologies for critical applications of an aircraft. The current state-of-art is presented in terms of system classifications based on data rate demands and transceiver installation locations. We then discuss major technical challenges in the design and realization of the envisioned aircraft applications. Although wireless avionics intra-communication has aspects and requirements similar to mission-critical applications of industrial automation, it also has specific issues such as complex structures, operations, and safety of the aircraft that make this area of research self-standing and challenging. To support the critical operations of an aircraft, existing wireless standards for mission-critical industrial applications are briefly discussed to investigate the applicability of the current solutions. Specifically, IEEE 802.15.4-based protocols and Bluetooth are discussed for low data rate applications, whereas IEEE 802.11- based standards are considered for high data rate applications. Eventually, we propose fundamental schemes in terms of network architecture, protocol, and resource management to support the critical avionics applications and discuss the research directions in this emerging area.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors

We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H2 sensors are shown to exhibit strong thickness dependence, with ~100x enhancement in the sensor response as the thickness is reduced from 48 to 8 nm. Through detailed experiments and modeling, the thickness scaling trend is attributed to the quantization of electrons which favorably alters both the position and the transport properties of charge carriers; thus making them more susceptible to surface phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Coulomb Drag of Massless Fermions in Graphene

Using a novel structure, consisting of two, independently contacted graphene single layers separated by an ultra-thin dielectric, we experimentally measure the Coulomb drag of massless fermions in graphene. At temperatures higher than 50 K, the Coulomb drag follows a temperature and carrier density dependence consistent with the Fermi liquid regime. As the temperature is reduced, the Coulomb drag exhibits giant fluctuations with an increasing amplitude, thanks to the interplay between coherent transport in the graphene layer and interaction between the two layers.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Lateral Spin Injection in Germanium Nanowires

Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin-based devices. Here we demonstrate lateral spin injection and detection in germanium nanowires, by using ferromagnetic metal contacts and tunnel barriers for contact resistance engineering. Using data measured from over 80 samples, we map out the contact resistance window for which lateral spin transport is observed, manifestly showing the conductivity matching required for spin injection. Our analysis, based on the spin diffusion theory, indicates that the spin diffusion length is larger than 100 μm in germanium nanowires at 4.2 K.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene films of the order of centimeters on copper substrates by chemical vapor deposition using methane. The films are predominantly single layer graphene with a small percentage (less than 5%) of the area having few layers, and are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to help make this growth process self-limiting. We also developed graphene film transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on Si/SiO2 substrates showed electron mobilities as high as 4050 cm2V-1s-1 at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Scaling Properties of Ge-SixGe1-x Core-Shell Nanowire Field Effect Transistors

We demonstrate the fabrication of high-performance Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain, and systematically investigate their scaling properties. Highly doped source and drain regions are realized by low energy boron implantation, which enables efficient carrier injection with a contact resistance much lower than the nanowire resistance. We extract key device parameters, such as intrinsic channel resistance, carrier mobility, effective channel length, and external contact resistance, as well as benchmark the device switching speed and ON/OFF current ratio.

0 citations0 reviewsNo code linkedOpen access