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Jia-Xin Xiong

Jia-Xin Xiong contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2021arXiv

An upper and lower bound to the orientation-dependent linear Rashba spin-orbit coupling of two-dimensional hole gases in semiconductor quantum wells

Our recent study [Phys. Rev. B 103, 085309 (2021)] verified the existence of $\bf{k}$-linear Rashba spin-orbit coupling (SOC) of two-dimensional hole gases in quantum wells (QWs) which originates from a combination of heavy-hole-light-hole (HH-LH) mixing and direct dipolar coupling to the external electric field. However, the Rashba SOC dependence on QW orientations remains unclear. Here, we explore this dependence on QW orientations and uncover an upper and lower bound to the orientation-dependent $\bf{k}$-linear Rashba SOC along the [110]- and [111]- crystalline directions by performing atomistic pseudopotential calculations associated with theoretical analysis. The intrinsic HH-LH mixing at the Brillouin zone center, maximal in [110]-oriented quantum wells and minimal in [111]- and [001]-oriented QWs, plays an essential role. Remarkably, we find that only $\bf{k}$-cubic Rashba SOC exists in [111]-oriented QWs. These findings help understand the physical mechanism of the Rashba SOC dependence on QW orientations and provide a strategic prediction for experiments to realize the large Rashba SOC.

preprint2021arXiv

The emergent linear Rashba spin-orbit coupling offering the fast manipulation of hole-spin qubits in germanium

The electric dipole spin resonance (EDSR) combining strong spin-orbit coupling (SOC) and electric-dipole transitions facilitates fast spin control in a scalable way, which is the critical aspect of the rapid progress made recently in germanium (Ge) hole-spin qubits. However, a puzzle is raised because centrosymmetric Ge lacks the Dresselhaus SOC, a key element in the initial proposal of the hole-based EDSR. Here, we demonstrate that the recently uncovered finite k-linear Rashba SOC of 2D holes offers fast hole spin control via EDSR with Rabi frequencies in excellent agreement with experimental results over a wide range of driving fields. We also suggest that the Rabi frequency can reach 500 MHz under a higher gate electric field or multiple GHz in a replacement by [110]oriented wells. These findings bring a deeper understanding for hole-spin qubit manipulation and offer design principles to boost the gate speed.

preprint2020arXiv

Emergence of the strong tunable linear Rashba spin-orbit coupling of two-dimensional hole gases in semiconductor quantum

Two-dimensional hole gases in semiconductor quantum wells are promising platforms for spintronics and quantum computation but suffer from the lack of the $\bf{k}$-linear term in the Rashba spin-orbit coupling (SOC), which is essential for spin manipulations without magnetism and commonly believed to be a $\bf{k}$-cubic term as the lowest order. Here, contrary to conventional wisdom, we uncover a strong and tunable $\bf{k}$-linear Rashba SOC in two-dimensional hole gases (2DHG) of semiconductor quantum wells by performing atomistic pseudopotential calculations combined with an effective Hamiltonian for a model system of Ge/Si quantum wells. Its maximal strength exceeds 120 meVÅ, comparable to the highest values reported in narrow bandgap III-V semiconductor 2D electron gases, which suffers from short spin lifetime due to the presence of nuclear spin. We also illustrate that this emergent $\bf{k}$-linear Rashba SOC is a first-order direct Rashba effect, originating from a combination of heavy-hole-light-hole mixing and direct dipolar intersubband coupling to the external electric field. These findings confirm Ge-based 2DHG to be an excellent platform towards large-scale quantum computation.