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Alex Zunger

Alex Zunger appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elquant-phcond-matcond-mat.supr-concond-mat.otherphysics.comp-ph

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Published work

35 published item(s)

preprint2021arXiv

Bulk NdNiO2 is thermodynamically unstable with respect to decomposition while hydrogenation reduces the instability and transforms it from metal to insulator

Through CaH2 chemical reduction of a parent R3+Ni3+O3 perovskite form, superconductivity was recently achieved in Sr-doped NdNiO2 on SrTiO3 substrate. Using density functional theory (DFT) calculations, we find that stoichiometric NdNiO2 is significantly unstable with respect to decomposition into 1/2[Nd2O3 + NiO + Ni] with exothermic decomposition energy of +176 meV/atom, a considerably higher instability than that for common ternary oxides. This poses the question if the stoichiometric NdNiO2 nickelate compound used extensively to model the electronic band structure of Ni-based oxide analog to cuprates and found to be metallic is the right model for this purpose. To examine this, we study via DFT the role of the common H impurity expected to be present in the process of chemical reduction needed to obtain NdNiO2. We find that H can be incorporated exothermically, i.e., spontaneously in NdNiO2, even from H2 gas. In the concentrated limit, such impurities can result in the formation of a hydride compound NdNiO2H, which has significantly reduced instability relative to hydrogen-free NdNiO2. Interestingly, the hydrogenated form has a similar lattice constant as the pure form (leading to comparable XRD patterns), but unlike the metallic character of NdNiO2, the hydrogenated form is predicted to be a wide gap insulator thus, requiring doping to create a metallic or superconducting state, just like cuprates, but unlike unhydrogenated nickelates. While it is possible that hydrogen would be eventually desorbed, the calculation suggests that pristine NdNiO2 is hydrogen-stabilized. One must exercise caution with theories predicting new physics in pristine stoichiometric NdNiO2 as it might be an unrealizable compound. Experimental examination of the composition of real NdNiO2 superconductors and the effect of hydrogen on the superconductivity is called for.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Dependence of band gaps in d-electron perovskite oxides on magnetism

Understanding the controlling principles of band gaps trends in d electron perovskites is needed both for gauging metal-insulator transitions, as well as their application in catalysis and doping. The magnitude of this band gap is rather different for different magnetic spin configurations. We find via electronic structure theory that the factors that connect gapping magnitudes to magnetism depend on the nature of the band edge orbital character (BEOC) and surprisingly scale with the number of antiferromagnetic contacts z$_i$ between neighboring transition metal ions. The dependence is weak when the BEOC are (d,d)-like ("Mott insulators"), whereas this dependence is rather strong in (p,d)-like ("charge transfer" insulators). These unexpected rules are traced to the reduced orbital interactions through the increase in the number of antiferromagnetic contacts between transition metal ions. The impact of magnetic order is not limited to the band gap magnitude and includes also the magnitude of lattice distortions connected to the electronic structure. These results highlight the importance of establishing in electronic structure theory of gap-related phenomena (doping, transport, metal-insulator transitions, conductive interfaces) the appropriate magnetic order.

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preprint2021arXiv

Intrinsic local symmetry-breaking in nominally cubic paraelectric BaTiO3

Whereas low-temperature ferroelectrics have a well understood ordered spatial dipole arrangement, the fate of these dipoles in paraelectric phases remains poorly understood. Using density functional theory (DFT), we find that unlike the case in conventional non-polar ABO$_3$ compounds illustrated here for cubic BaZrO$_3$, the origin of the distribution of the B site off-centering in cubic paraelectric such as BaTiO$_3$ is an intrinsic, energy stabilizing symmetry breaking. Minimizing the internal energy E of a constrained cubic phase already reveals the formation of a distribution of intrinsic local displacements that (i) mimic the symmetries of the low temperature phases, while (ii) being the precursors of what finite temperature DFT Molecular Dynamics finds as thermal motifs. The implications of such symmetry breaking on the microscopic structures and anomalous properties in these kinds of PE materials are discussed.

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preprint2020arXiv

Emergence of an upper bound to the electric field controlled Rashba spin splitting in InAs nanowires

The experimental assessment of the strength ($α_R$) of the Rashba spin-orbit coupling is rather indirect and involves the measurement of the spin relaxation length from magnetotransport, together with a model of weak antilocalization. The analysis of the spin relaxation length in nanowires, however, clouds the experimental assessment of the $α_R$ and leads to the prevailing belief that it can be tuned freely with electric field--a central tenant of spintronics. Here, we report direct theory of $α_R$ leading to atomistic calculations of the spin band structure of InAs nanowires upon application of electric field-- a direct method that does not require a theory of spin relaxation. Surprisingly, we find an {\it upper bound} to the electric field tunable Rashba spin splitting and the ensuing $α_R$; for InAs nanowires, $α_R$ is pinned at about 170 meVÅ irrespective of the applied field strength. We find that this pinning is due to the quantum confined stark effect, that reduces continuously the nanowire band gap with applied electric field, leading eventually to band gap closure and a considerable increase in the density of free carriers. This results in turn in a strong screening that prevents the applied electric field inside the nanowire from increasing further beyond around 200 kV/cm for InAs nanowires. Therefore, further increase in the gate voltage will not increase $α_R$. This finding clarifies the physical trends to be expected in nanowire Rashba SOC and the roles played by the nano size and electric field.

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preprint2020arXiv

Ferri-chiral compounds with potentially switchable Dresselhaus spin split-ting

Spin splitting of energy bands can be induced by relativistic spin-orbit interactions in materials without inversion symmetry. Whereas polar space group symmetries permit Rashba (R-1) spin splitting with helical spin textures in momentum space, which could be reversed upon switching a ferroelectric polarization via applied electric fields, the ordinary Dresselhaus effect (D-1A) is ac-tive only in materials exhibiting nonpolar noncentrosymmetric crystal classes with atoms occupy-ing exclusively non-polar lattice sites. Consequently, the spin-momentum locking induced by D-1A is not electric field-switchable. An alternative type of Dresselhaus symmetry, referred to as D-1B, exhibits crystal class constraints similar to D-1A (all dipoles add up to zero), but unlike D-1A, at least one polar site is occupied. We find that this behavior exists in a class of ferri-chiral crys-tals, which in principle could be reversed upon a change in chirality. Focusing on alkali metal chalcogenides, we identify NaCu5S3 in the nonentiamorphic ferri-chiral structure, which exhibits CuS3 chiral units differing in the magnitude of their Cu displacements. We then synthesize NaCu5S3 (space group P6322) and confirm its ferri-chiral structure with power x-ray diffraction. Our electronic structure calculations demonstrate it exhibits D-1B spin splitting as well as a ferri-chiral phase transition, revealing spin splitting interdependent on chirality. Our electronic struc-ture calculations show that a few percent biaxial tensile strain can reduce (or nearly quench) the switching barrier separating the monodomain ferri-chiral P6322 states. We discuss what type of external stimuli might switch the chirality so as to reverse the (non-helical) Dresselhaus D-1B spin texture, offering an alternative to the traditional reversal of the (helical) Rashba spin texture.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Giant momentum-dependent spin splitting in centrosymmetric low Z antiferromagnets

The energy vs. crystal momentum E(k) diagram for a solid (band structure) constitutes the road map for navigating its optical, magnetic, and transport properties. By selecting crystals with specific atom types, composition and symmetries, one could design a target band structure and thus desired properties. A particularly attractive outcome would be to design energy bands that are split into spin components with a momentum-dependent splitting, as envisioned by Pekar and Rashba [Zh. Eksperim. i Teor. Fiz. 47 (1964)], enabling spintronic application. The current paper provides "design principles" for wavevector dependent spin splitting (SS) of energy bands that parallels the traditional Dresselhaus and Rashba spin-orbit coupling (SOC) - induce splitting, but originates from a fundamentally different source -- antiferromagnetism. We identify a few generic AFM prototypes with distinct SS patterns using magnetic symmetry design principles. These tools allow also the identification of specific AFM compounds with SS belonging to different prototypes. A specific compound -- centrosymmetric tetragonal MnF2 -- is used via density functional band structure calculations to quantitatively illustrate one type of AFM SS. Unlike the traditional SOC-induced effects restricted to non-centrosymmetric crystals, we show that antiferromagnetic-induced spin splitting broadens the playing field to include even centrosymmetric compounds, and gives SS comparable in magnitude to the best known ('giant') SOC effects, even without SOC, and consequently does not rely on the often-unstable high atomic number elements required for high SOC. We envision that use of the current design principles to identify an optimal antiferromagnet with spin-split energy bands would be beneficial for efficient spin-charge conversion and spin orbit torque applications without the burden of requiring compounds containing heavy elements.

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preprint2020arXiv

Prediction of low-Z collinear and noncollinear antiferromagnetic compounds having momentum-dependent spin splitting even without spin-orbit coupling

Recent study (Yuan et. al., Phys. Rev. B 102, 014422 (2020)) revealed a SOC-independent spin splitting and spin polarization effect induced by antiferromagnetic ordering which do not necessarily require breaking of inversion symmetry or the presence of SOC, hence can exist even in centrosymmetric, low-Z light element compounds, considerably broadening the material base for spin polarization. In the present work we develop the magnetic symmetry conditions enabling such effect, dividing the 1651 magnetic space groups into 7 different spin splitting prototypes (SST-1 to SST-7). We use the 'Inverse Design' approach of first formulating the target property (here, spin splitting in low-Z compounds not restricted to low symmetry structures), then derive the enabling physical design principles to search realizable compounds that satisfy these a priori design principles. This process uncovers 422 magnetic space groups (160 centrosymmetric and 262 non-centrosymmetric) that could hold AFM-induced, SOC-independent spin splitting and spin polarization. We then search for stable compounds following such enabling symmetries. We investigate the electronic and spin structures of some selected prototype compounds by density functional theory (DFT) and find spin textures that are different than the traditional Rashba-Dresselhaus patterns. We provide the DFT results for all antiferromagnetic spin splitting prototypes (SST-1 to SST-4) and concentrate on revealing of the AFM-induced spin splitting prototype (SST-4). The symmetry design principles along with their transformation into an Inverse Design material search approach and DFT verification could open the way to their experimental examination.M). The symmetry design principles along with their transformation into an Inverse Design material search approach and DFT verification could open the way to their experimental examination.

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preprint2020arXiv

Symmetry-Breaking Polymorphous Descriptions for Complex Materials without Interelectronic U

Correlated materials with open-shell d- and f-ions having degenerate band edge states show a rich variety of interesting properties ranging from metal-insulator transition to unconventional superconductivity. The textbook view for the electronic structure of these materials is that mean-field approaches are inappropriate, as the interelectronic interaction U is required to open a band gap between the occupied and unoccupied degenerate states while retaining symmetry. We show that the latter scenario often defining what Mott insulators are, is in fact not needed for the 3d binary oxides MnO, FeO, CoO, and NiO. The mean-field band theory can indeed lift such degeneracies in the binaries when nontrivial unit cell representations (polymorphous networks) are allowed to break symmetries, in conjunction with a recently developed non-empirical exchange and correlation density-functional without an on-site interelectronic interaction U. We explain how density-functional theory (DFT) in the polymorphous representation achieves band gap opening in correlated materials through a separate mechanism to the Mott-Hubbard approach. We show the method predicts magnetic moments and gaps for the four binary monoxides in both the antiferromagnetic and paramagnetic phases, offering an effective alternative to symmetry-conserving approaches for studying a range of functionalities in open d- and f-shell complex materials.

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preprint2020arXiv

The polymorphous nature of cubic halide perovskites

It has been long known that numerous halide and oxide perovskites can have non-ideal octahedra, showing tilting, rotation, and metal atom displacements. It has also been known that compounds that have at low temperatures a single structural motif ("monomorphous structures") could become disordered at higher temperatures, resulting in non-ideal octahedra as an entropy effect. What is shown here is that in many cubic halide perovskites and some oxides compounds a distribution of different low-symmetry octahedra ("polymorphous networks") emerge already from the minimization of the systems internal energy, i.e., they represent the intrinsic, preferred low temperature pattern of chemical bonding. Thermal disorder effects build up at elevated temperatures on top of such low temperature polymorphous networks. Compared with the monomorphous counterparts, the polymorphous networks have lower predicted total energies (enhanced stability), larger band gaps and dielectric constants now dominated by the ionic part, and agrees much more closely with the observed pair distribution functions. The nominal cubic perovskites (Pm-3m) structure deduced from X-Ray diffraction is actually a macroscopically averaged, high symmetry configuration, which should not be used to model electronic properties, given that the latter reflect a low symmetry local configuration.

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preprint2020arXiv

The Rashba Scale: Emergence of Band Anti-Crossing as a Design Principle for Materials with Large Rashba coefficient

The spin-orbit -induced spin splitting of energy bands in low symmetry compounds (the Rashba Effect) has a long-standing relevance to spintronic applications and to the fundamental understanding of symmetry breaking in solids, yet the knowledge of what controls its magnitude in different materials is difficult to anticipate. Indeed, rare discoveries of compounds with large Rashba coefficients are invariably greeted as pleasant surprises. We advance the understanding of the "Rashba Scale" using the "inverse design" approach by formulating theoretically the relevant design principle and then identifying compounds that satisfy it. We show that the presence of energy band anti-crossing provides a causal design principle of compounds with large Rashba coefficients, leading to the identification via first-principles calculations of 34 rationally designed strong-Rashba compounds. Since topological insulators must have band anti crossing, this leads us to establish an interesting cross functionality of "Topological Rashba Insulators" (TRI) that may provide a platform for the simultaneous control of spin splitting and spin-polarization.

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preprint2020arXiv

Understanding Electronic Peculiarities in Tetragonal FeSe as Local Structural Symmetry Breaking

Traditional band theory of perfect crystalline solids often uses as input the structure deduced from diffraction experiments; when modeled by the minimal unit cell this often produces a spatially averaged model. The present study illustrates that this is not always a safe practice unless one examines if the intrinsic bonding mechanism is capable of benefiting from the formation of a distribution of lower symmetry local environments that differ from the macroscopically averaged structure. This can happen either due to positional, or due to magnetic symmetry breaking. By removing the constraint of a small crystallographic cell, the energy minimization in the density functional theory finds atomic and spin symmetry breaking, not evident in conventional diffraction experiments but being found by local probes such as pair distribution function analysis. Here we report that large atomic and electronic anomalies in bulk tetragonal FeSe emerge from the existence of distributions of local positional and magnetic moment motifs. The found symmetry-broken motifs obtained by minimization of the internal energy represent what chemical bonding in tetragonal phase prefers as an intrinsic energy lowering static distortions. This explains observations of band renormalization, predicts orbital order and enhanced nematicity, and provides unprecedented close agreement with spectral function measured by photoemission and local atomic environment revealed by pair distribution function. While the symmetry-restricted strong correlation approach has been argued previously to be the exclusive theory needed for describing the main peculiarities of FeSe, we show here that the symmetry-broken mean-field approach addresses numerous aspects of the problem, provides intuitive insight into the electronic structure, and opens the door for large-scale mean-field calculations for similar d-electron quantum materials.

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preprint2019arXiv

Spontaneous non-stoichiometry and ordering of metal vacancies in degenerate insulators

We point to a class of materials representing an exception to the Daltonian view that compounds maintain integer stoichiometry at low temperatures, because forming stoichiometry-violating defects cost energy. We show that carriers in the conduction band (CB) of degenerate insulators in Ca-Al-O, Ag-Al-O, or Ba-Nb-O systems can cause a self-regulating instability, whereby cation vacancies form exothermically because a fraction of the free carriers in the CB decay into the hole states formed by such vacancies, and this negative electron-hole recombination energy offsets the positive energy associated with vacancy bond breaking. This Fermi level-induced spontaneous non-stoichiometry can lead to the formation of crystallographically ordered vacancy compounds (OVCs), explaining the previously peculiar occurrence of unusual atomic sequences such as BalNbmOn with l:m:n ratios of 1:2:6, 3:5:15, or 9:10:30. This work has general ramifications as the degenerate insulators have found growing interests in many fields ranging from transparent conductors to electrides that are electron donating promotors for catalyst.

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preprint2016arXiv

Minimal Ingredients for Orbital Texture Switches at Dirac Points in Strong Spin-Orbit Coupled Materials

Recent angle resolved photoemission spectroscopy measurements on strong spin-orbit coupled materials have shown an in-plane orbital texture switch at their respective Dirac points, regardless of whether they are topological insulators or "trivial" Rashba materials. This feature has also been demonstrated in a few materials ($\text{Bi}_2\text{Se}_3$, $\text{Bi}_2\text{Te}_3$, and $\text{BiTeI}$) though DFT calculations. Here we present a minimal orbital-derived tight binding model to calculate the electron wave-function in a two-dimensional crystal lattice. We show that the orbital components of the wave-function demonstrate an orbital-texture switch in addition to the usual spin switch seen in spin polarized bands. This orbital texture switch is determined by the existence of three main properties: local or global inversion symmetry breaking, strong spin-orbit coupling, and non-local physics (the electrons are on a lattice). Using our model we demonstrate that the orbital texture switch is ubiquitous and to be expected in many real systems. The orbital hybridization of the bands is the key aspect for understanding the unique wave function properties of these materials, and this minimal model helps to establish the quantum perturbations that drive these hybridizations.

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preprint2016arXiv

Orbital mapping of energy bands and the truncated spin polarization in three-dimensional Rashba semiconductors

Associated with spin-orbit coupling (SOC) and inversion symmetry breaking, Rashba spin polarization opens a new avenue for spintronic applications that was previously limited to ordinary magnets. However, spin polarization effects in actual Rashba systems are far more complicated than what conventional single-orbital models would suggest. By studying via first-principles DFT and a multi-orbital k.p model a 3D bulk Rashba system (free of complications by surface effects) we find that the physical origin of the leading spin polarization effects is SOC-induced hybridization between spin and multiple orbitals, especially those with nonzero orbital angular momenta. In this framework we establish a general understanding of the orbital mapping, common to the surface of topological insulators and Rashba system. Consequently, the intrinsic mechanism of various spin polarization effects, which pertain to all Rashba systems even those with global inversion symmetry, is understood as a manifestation of the orbital textures. This finding suggests a route for designing high spin-polarization materials by considering the atomic-orbital content.

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preprint2016arXiv

Polytypism in LaOBiS2-type compounds based on different three-dimensional stacking sequences of two-dimensional BiS2 layers

LaOBiS2-type materials have drawn much attention recently because of various interesting physical properties, such as low-temperature superconductivity, hidden spin polarization, and electrically tunable Dirac cones. However, it was generally assumed that each LaOBiS2-type compound has a unique and specific crystallographic structure (with a space group P4/nmm) separated from other phases. Using first-principles total energy and stability calculations we confirm that the previous assignment of the centrosymetric P4/nmm structure to LaOBiS2 is incorrect as a phonon instability renders this structure impossible. Furthermore, we find that the unstable structure is replaced by a family of energetically closely spaced modifications (polytypes) differing by the layer sequences and orientations. We find that the local Bi-S distortion leads to three polytypes of LaOBiS2 with different stacking patterns of the distorted BiS2 layers. The energy difference between the polytypes of LaOBiS2 is merely ~1 meV/u.c., indicating the possible coexistence of all polytypes in the real sample and that the particular distribution of polytypes may be growth-induced. The in-plane distortion can be suppressed by pressure, leading to a phase transition from polytypes to the high-symmetry P4/nmm structure with a pressure larger than 2.5 GPa. In addition, different choices of the intermediate atoms (replacing La) or active atoms (BiS2) could also manifest different ground state structures. One can thus tune the distortion and the ground state by pressure or substituting covalence atoms in LaOBiS2-family.

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preprint2016arXiv

Transforming common III-V and II-VI semiconductor compounds into topological heterostructures: The case of CdTe/InSb superlattices

Currently known topological insulators (TIs) are limited to narrow gap compounds incorporating heavy elements, thus severely limiting the material pool available for such applications. We show via first-principle calculations how a heterovalent superlattice made of common semiconductor building blocks can transform its non-TI components into a topological nanostructure, illustrated by III-V/II-VI superlattice InSb/CdTe. The heterovalent nature of such interfaces sets up, in the absence of interfacial atomic exchange, a natural internal electric field that along with the quantum confinement leads to band inversion, transforming these semiconductors into a topological phase while also forming a giant Rashba spin splitting. We reveal the relationship between the interfacial stability and the topological transition, finding a window of opportunity where both conditions can be optimized. Once a critical InSb layer thickness above ~ 1.5 nm is reached, both [111] and [100] superlattices have a relative energy of 5-14 meV/A2 higher than that of the atomically exchanged interface and an excitation gap up to ~150 meV, affording room-temperature quantum spin Hall effect in semiconductor superlattices. The understanding gained from this study could significantly broaden the current, rather restricted repertoire of functionalities available from individual compounds by creating next-generation super-structured functional materials.

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preprint2015arXiv

Intrinsic circular polarization in centrosymmetric stacks of transition-metal dichalcogenides

The circular polarization (CP) that the photoluminescence inherits from the excitation source in n monolayers of transition-metal dichalcogenides (MX2)n has been previously explained as a special feature of odd values of n, where the inversion symmetry is absent. This valley polarization effect results from the fact that in the absence of inversion, charge carriers in different band valleys could be selectively excited by different circular polarized light. Such restriction to non-centrosymmetric systems poses a limitation on the material selection for achieving CP. Although several experiments observed CP in centrosymmetric MX2 systems e.g., for bilayer in MX2, they were dismissed as being due to some extrinsic sample irregularities. Here we show that also for n = even where inversion symmetry is present and valley polarization physics is strictly absent, such intrinsic selectivity in CP is to be expected on the basis of fundamental spin-orbit physics. First-principles calculations of CP predict significant polarization for n = 2 bilayers: from 69% in MoS2 to 93% in WS2. This realization could broaden the range of materials to be considered as CP sources.

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preprint2015arXiv

Intrinsic transparent conductors without doping

Transparent conductors (TC's) combine the usually contraindicated properties of electrical conductivity with optical transparency and are generally made by starting with a transparent insulator and making it conductive via heavy doping, an approach that generally faces severe 'doping bottlenecks'. We propose a different idea for TC design-starting with a metallic conductor and designing transparency by control of intrinsic interband transitions and intraband plasmonic frequency. We identify the specific design principles for three such prototypical intrinsic TC classes and then search computationally for materials that satisfy them. Remarkably, one of the intrinsic TC, Ag3Al22O34, is predicted also to be a prototype 3D compounds that manifest natural 2D electron gas (2DEG) regions with very high electron density and conductivity.

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preprint2015arXiv

Search and design of nonmagnetic centrosymmetric layered crystals with large local spin polarization

Until recently, spin-polarization in nonmagnetic materials was the exclusive territory of non- centrosymmetric structures. It was recently shown that a form of hidden spin polarization (named the Rashba-2 or R-2 effect) could exist in globally centrosymmetric crystals provided the individual layers belong to polar point group symmetries. This realization could considerably broaden the range of materials that might be considered for spin-polarization spintronic applications to include the hitherto forbidden spintronic compound that belong to centrosymetric symmetries. Here we take the necessary steps to transition from such general, material-agnostic condensed matter theory arguments to material-specific design principles that could aid future laboratory search of R-2 materials. Specifically, we (i) classify different prototype layered structures that have been broadly studied in the literature in terms of their expected R-2 behavior, including the Bi2Se3-structure type (a prototype topological insulator), MoS2-structure type (a prototype valleytronic compound) and LaBiOS2-structure type (a host of superconductivity upon doping); (ii) formulate the properties that ideal R-2 compounds should have in terms of combination of their global unit cell symmetries with specific point group symmetries of their constituent sectors; (iii) use first-principles band theory to search for compounds from the prototype family of LaOBiS2-type structures that satisfy these R-2 design metrics. We initially consider both stable and hypothetical compounds to establish an understanding of trends of R-2 with composition, and then indicate the predictions that are expected to be stable and synthesizable. We predict large spin splittings (up to ~ 200 meV for holes in LaOBiTe2) as well as surface Rashba states. Experimental testing of such predictions is called for.

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preprint2014arXiv

A polarity-induced defect mechanism for conductivity and magnetism at polar-nonpolar oxide interfaces

The discovery of conducting two-dimensional electron gas (2DEG) and magnetism at the interface between insulating nonmagnetic oxides, as exemplified by the polar LaAlO3 and nonpolar SrTiO3 has raised prospects for attaining interfacial functionalities absent in the component materials. Yet, the microscopic origin of such emergent phenomena remains unclear, posing obstacles to design of improved functionalities. Using first principles defect calculations, we reveal a unifying polarity-induced defect mechanism for both conductivity and magnetism at polar-nonpolar interfaces of nonmagnetic insulating oxides. We demonstrate that the polar-discontinuity across the interface triggers thermodynamically the spontaneous formation of certain defects that in turn cancel the polar field induced by the polar discontinuity. It turns out that the 2DEG originates from those spontaneously formed surface donor defects (oxygen vacancy), but the density of 2DEG is controlled by the interfacial anti-site acceptor defects (Al-on-Ti). The interface magnetism is found to originate from the un-ionized deep Ti-on-Al anti-site donor defects within the LaAlO3 side near the interface. Our results suggest practical design guidelines for inducing and controlling both 2DEG and magnetism at polar-nonpolar oxide interfaces.

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preprint2014arXiv

Cation ordering induced polarization enhancement for $PbTiO_3$-$SrTiO_3$ ferroelectric-dielectric superlattices

In this paper, an efficient computational material design approach (cluster expansion) is employed for the ferroelectric $PbTiO_3$/$SrTiO_3$ system. Via exploring a conguration space including over $3 \times 10^6$ candidates, two special cation ordered configurations: either perfect or mixed 1/1 (101) superlattice, are identified with the mostly enhanced ferroelectric polarization by up to about 100% in comparison with the (001) superlattice. Analyzing these two special configurations reveals the exotic couplings between the antiferrodistortive distortion (AFD) and ferroelectric polarization (FE) modes, e.g., tilting along x or y axis and polarization in z direction, as the origin for the best polarization property in this system. The identified cation ordering motifs and the exotic AFD-FE couplings could provide fresh ideas to design multifunctional perovskite heterostructures.

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preprint2014arXiv

Prediction and accelerated laboratory discovery of previously unknown 18-electron ABX compounds

Chemists and material scientists have often focused on the properties of previously reported compounds, leaving out numerous unreported but chemically plausible compounds that could have interesting properties. For example, the 18-valence electron ABX family of compounds includes the half-Heusler subgroup, and features examples of topological insulators, thermoelectrics and superconductors, but only 83 out of 483 of these possible compounds have been made. Using first-principles thermodynamics we have examined the theoretical stability of 400 unreported members and predict that 54 should be stable. 15 previously missing materials, now predicted stable, were grown in this study; X-ray studies agreed with the predicted crystal structure in all 15 cases. Among the characterized properties of the missing compounds are potential transparent conductors, thermoelectric materials and topological semimetals. This integrated process-prediction of functionality in unreported compounds followed by laboratory synthesis and characterization-could be a route to the systematic discovery of hitherto missing, realizable functional materials.

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preprint2014arXiv

Split Dirac cones in HgTe/CdTe quantum wells due to symmetry-enforced level anticrossing at interfaces

We describe the fine structure of Dirac states in HgTe/CdHgTe quantum wells of critical and close-to-critical thickness and demonstrate the formation of an anticrossing gap between the tips of the Dirac cones driven by interface inversion asymmetry. By combining symmetry analysis, atomistic calculations, and k-p theory with interface terms, we obtain a quantitative description of the energy spectrum and extract the interface mixing coefficient. The zero-magnetic-field splitting of Dirac cones can be experimentally revealed in studying magnetotransport phenomena, cyclotron resonance, Raman scattering, or THz radiation absorption.

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preprint2014arXiv

Supercoupling between heavy-hole and light-hole states in self-assembled quantum dots

Spintronics, quantum computing and quantum communication science utilizing cubic semiconductors rely largely on the properties of the hole states, composed of light and heavy hole wavefunction components. The admixture of light-hole (LH) into ground hole state predominately by the heavy hole (HH) would induce unique features of LH in optical transitions, spin relaxation, and spin polarization. We point to an unexpected source of HH-LH mixing in quantum dots, arguing that in contrast with current models the mixing does not reflect the strain between the dot and its matrix and does not scale inversely with the energy splitting between the bulk HH and LH states. Instead, we show via atomistic pseudopotential calculations on a range of strained and unstrained dots of different symmetries that the HH-LH mixing is enabled by the presence in the QD of a dense ladder of intermediate states between the HH and LH states which amplifies and propagates this interaction and leads to "supercoupling" (analogous to super-exchange in magnetism). This explains a number of outstanding puzzles regarding the surprising large coupling seen in unstrained QD (GaAs/AlAs) of ideal shapes and the surprising fact that in strained QD (InAs/GaAs) the coupling is very strong despite the fact that the 12-fold increase in bulk HH-LH splitting overrides the ~4 fold enhancement of the coupling matrix element by strain in comparison with unstrained GaAs QDs.

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preprint2013arXiv

Genetic Design of Enhanced Valley Splitting towards a Spin Qubit in Silicon

Electronic spins in Silicon (Si) are rising contenders for qubits -- the logical unit of quantum computation-- owing to its outstanding spin coherence properties and compatibility to standard electronics. A remarkable limitation for spin quantum computing in Si hosts is the orbital degeneracy of this material's conduction band, preventing the spin-1/2 states from being an isolated two-level system. So far available samples of Si quantum wells cladded by Ge-Si alloy barriers provide relatively small valley splitting (VS), with the order of 1 meV or less, degrading the fidelity of qubits encoded in spin "up" and "down" states in Si. Here, based on an atomically resolved pseudopotential theory, we demonstrate that ordered Ge-Si layered barriers confining a Si slab can be harnessed to enhance the VS in the active Si region by up to one order of magnitude compared to the random alloy barriers adopted so far. A biologically inspired genetic-algorithm search is employed to identify magic Ge/Si layer sequences of the superlattice barriers that isolate the electron ground state in a single valley composition with VS as large as ~9 meV. The enhanced VS is preserved with the reasonable inter-layer mixing between different species, and is interestingly "protected" even if some larger mixing occurs. Implementation of the optimized layer sequences of barriers, within reach of modern superlattice growth techniques, overcomes in a practical systematic way the main current limitations related to the orbital degeneracy, thus providing a roadmap for reliable spin-only quantum computing in Si.

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preprint2013arXiv

Statistical Properties of Exciton Fine Structure Splittings and Polarization Angles in Quantum Dot Ensembles

We propose an effective model to describe the statistical properties of exciton fine structure splitting (FSS) and polarization angle of quantum dot ensembles (QDEs). We derive the distributions of FSS and polarization angle for QDEs and show that their statistical features can be fully characterized using at most three independent measurable parameters. The effective model is confirmed using atomistic pseudopotential calculations as well as experimental measurements for several rather different QDEs. The model naturally addresses three fundamental questions that are frequently encountered in theories and experiments: (I) Why the probability of finding QDs with vanishing FSS is generally very small? (II) Why FSS and polarization angle differ dramatically from QD to QD? and (III) Is there any direct connection between FSS, optical polarization and the morphology of QDs? The answers to these fundamental questions yield a completely new physical picture for understanding optical properties of QDEs.

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preprint2011arXiv

False-positive and False-negative assignments of Topological Insulators in Density-Functional Theory and Hybrids

Density-functional Theory (DFT) approaches have recently been used to judge the topological order of various materials despite its well-known band gap underestimation. Use of the more accurate quasi-particle GW approach reveals here few cases where DFT identifications are false-positive, possibly misguiding experimental searches of materials that are topological insulators (TI) in DFT but not expected to be TI in reality. We also present the case of false-positive due to the incorrect choice of crystal structures and adress the relevancy of such choice of crystal structure with respect to the ground state one and thermodynamical instability with respect to binary competing phases. We conclude that it is then necessary to consider both the correct ground state crystal structure and the correct Hamiltonian in order to predict new TI.

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preprint2010arXiv

Manybody GW calculation of the oxygen vacancy in ZnO

Density functional theory (DFT) calculations of defect levels in semiconductors based on approximate functionals are subject to considerable uncertainties, in particular due to inaccurate band gap energies. Testing previous correction methods by many-body GW calculations for the O vacancy in ZnO, we find that: (i) The GW quasi-particle shifts of the VO defect states increase the spitting between occupied and unoccupied states due to self-interaction correction, and do not reflect the conduction versus valence band character. (ii) The GW quasi-particle energies of charged defect states require important corrections for supercell finite size effects. (iii) The GW results are robust with respect to the choice of the underlying DFT or hybrid-DFT functional, and the (2+/0) donor transition lies below mid-gap, close to our previous prediction employing rigid band edge shifts.

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preprint2009arXiv

Prediction of large linear-in-k spin splitting for holes in the 2D GaAs/AlAs system

The spin-orbit interaction generally leads to spin splitting (SS) of electron and hole energy states in solids, a splitting that is characterized by a scaling with the wavevector $\bf k$. Whereas for {\it 3D bulk zincblende} solids the electron (heavy hole) SS exhibits a cubic (linear) scaling with $k$, in {\it 2D quantum-wells} the electron (heavy hole) SS is currently believed to have a mostly linear (cubic) scaling. Such expectations are based on using a small 3D envelope function basis set to describe 2D physics. By treating instead the 2D system explicitly in a multi-band many-body approach we discover a large linear scaling of hole states in 2D. This scaling emerges from hole bands coupling that would be unsuspected by the standard model that judges coupling by energy proximity. This discovery of a linear Dresselhaus k-scaling for holes in 2D implies a different understanding of hole-physics in low-dimensions.

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preprint2007arXiv

Electronic structures of (In,Ga)As/GaAs quantum dot molecules made of dots with dissimilar sizes

Using single-particle pseudopotential and many-particle configuration interaction methods, we compare various physical quantities of (In,Ga)As/GaAs quantum dot molecules (QDMs) made of dissimilar dots (heteropolar QDMs) with QDMs made of identical dots (homopolar QDMs). The calculations show that the electronic structures of hetero-QDMs and homo-QDMs differ significantly at large inter-dot distance. In particular (i) Unlike those of homo-QDMs, the single-particle molecular orbitals of hetero-QDMs convert to dot localized orbitals at large inter-dot distance. (ii) Consequently, in a hetero-QMD the bonding-antibonding splitting of molecular orbitals at large inter-dot distance is significantly larger than the electron hopping energy whereas for homo-QDM, the bonding-antibonding splitting is very similar to the hopping energy. (iii) The asymmetry of the QDM increases significantly the double occupation for the two-electron ground states, and therefore affects the degree of entanglement of the two electrons.

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preprint2004arXiv

Theory of excitonic spectra and entanglement engineering in dot molecules

We present results of correlated pseudopotential calculations of an exciton in a pair of vertically stacked InGaAs/GaAs dots. Competing effects of strain, geometry, and band mixing lead to many unexpected features missing in contemporary models. The first four excitonic states are all optically active at small interdot separation, due to the broken symmetry of the single-particle states. We quantify the degree of entanglement of the exciton wavefunctions and show its sensitivity to interdot separation. We suggest ways to spectroscopically identify and maximize the entanglement of exciton states.

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preprint2000arXiv

BAs and boride III-V alloys

Boron arsenide, the typically-ignored member of the III-V arsenide series BAs-AlAs-GaAs-InAs is found to resemble silicon electronically: its Gamma conduction band minimum is p-like (Gamma_15), not s-like (Gamma_1c), it has an X_1c-like indirect band gap, and its bond charge is distributed almost equally on the two atoms in the unit cell, exhibiting nearly perfect covalency. The reasons for these are tracked down to the anomalously low atomic p orbital energy in the boron and to the unusually strong s-s repulsion in BAs relative to most other III-V compounds. We find unexpected valence band offsets of BAs with respect to GaAs and AlAs. The valence band maximum (VBM) of BAs is significantly higher than that of AlAs, despite the much smaller bond length of BAs, and the VBM of GaAs is only slightly higher than in BAs. These effects result from the unusually strong mixing of the cation and anion states at the VBM. For the BAs-GaAs alloys, we find (i) a relatively small (~3.5 eV) and composition-independent band gap bowing. This means that while addition of small amounts of nitrogen to GaAs lowers the gap, addition of small amounts of boron to GaAs raises the gap (ii) boron ``semi-localized'' states in the conduction band (similar to those in GaN-GaAs alloys), and (iii) bulk mixing enthalpies which are smaller than in GaN-GaAs alloys. The unique features of boride III-V alloys offer new opportunities in band gap engineering.

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preprint2000arXiv

Correlation versus mean-field contributions to excitons, multi-excitons, and charging energies in semiconductor quantum dots

Single-dot spectroscopy is now able to resolve the energies of excitons, multi-excitons, and charging of semiconductor quantum dots with ~<1 meV resolution. We discuss the physical content of these energies and show how they can be calculated via Quantum Monte Carlo (QMC) and Configuration Interaction (CI) methods.

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preprint1997arXiv

Predicion of charge separation in GaAs/AlAs cylindrical Russian Doll nanostructures

We have contrasted the quantum confinement of (i) multiple quantum wells of flat GaAs and AlAs layers, i.e. $(\GaAs)_{m}/(\AlAs)_n/(\GaAs)_p/(\AlAs)_q$, with (ii) ``cylindrical Russian Dolls'' -- an equivalent sequence of wells and barriers arranged as concentric wires. Using a pseudopotential plane-wave calculation, we identified theoretically a set of numbers ($m,n,p$ and $q$) such that charge separation can exist in ``cylindrical Russian Dolls'': the CBM is localized in the inner GaAs layer, while the VBM is localized in the outer GaAs layer.

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preprint1994arXiv

Effects of atomic clustering on the optical properties of III-V alloys

Self-consistent electronic structure calculations together with a structural model are used to study the effect of short-range atomic order on the optical properties of otherwise random Al(0.5)Ga(0.5)As, Ga(0.5)In(0.5)P, and Al(0.5)In(0.5)As alloys. We find that clustering can reduce the direct band gap of these alloys by as much as 100 meV. Furthermore, sufficiently strong clustering is predicted to transform Al(0.5)Ga(0.5)As into a direct gap material.

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