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Jun Ding

Jun Ding appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.comp-phComputer Visioncond-mat.mes-hallMachine Learningphysics.app-phphysics.flu-dynphysics.opticsquant-ph

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Published work

16 published item(s)

preprint2026arXiv

Data-Driven Flow Initialization Framework for CFD Acceleration of Underwater Vehicle in Vertical-Plane Oblique Motion

Accurate prediction of flow fields around underwater vehicles undergoing vertical-plane oblique motions is critical for hydrodynamic analysis, but it often requires computationally expensive CFD simulations. This study proposes a Data-Driven Flow Initialization (DDFI) framework that accelerates CFD simulation by integrating deep neural network (DNN) to predict full-domain flow fields. Using the suboff hull under various inlet velocities and angles of attack as an example, a DNN is trained to predict velocity, pressure, and turbulent quantities based on mesh geometry, operating conditions, and hybrid vectors. The DNN can provide reasonably accurate predictions with a relative error about 3.3%. To enhance numerical accuracy while maintaining physical consistency, the DNN-predicted flow fields are utilized as initial solutions for the CFD solver, achieving up to 3.5-fold and 2.0-fold speedup at residual thresholds of 5*10^(-6)and 5*10^(-8), respectively. This method maintains physical consistency by refining neural network outputs via traditional CFD solvers, balancing computational efficiency and accuracy. Notably, reducing the size of training set does not exert an essential impact on acceleration performance. Besides, this method exhibits cross-mesh generalization capability. In general, this proposed hybrid approach offers a new pathway for high-fidelity and efficient full-domain flow field predictions around complex underwater vehicles.

0 citations0 reviewsNo code linkedOpen access
preprint2025arXiv

GCA-ResUNet: Medical Image Segmentation Using Grouped Coordinate Attention

Accurate segmentation of heterogeneous anatomical structures is pivotal for computer-aided diagnosis and subsequent clinical decision-making. Although U-Net based convolutional neural networks have achieved remarkable progress, their intrinsic locality and largely homogeneous attention formulations often limit the modeling of long-range contextual dependencies, especially in multi-organ scenarios and low-contrast regions. Transformer-based architectures mitigate this issue by leveraging global self-attention, but they usually require higher computational resources and larger training data, which may impede deployment in resource-constrained clinical environments.In this paper, we propose GCA-ResUNet, an efficient medical image segmentation framework equipped with a lightweight and plug-and-play Grouped Coordinate Attention (GCA) module. The proposed GCA decouples channel-wise context modeling into multiple groups to explicitly account for semantic heterogeneity across channels, and integrates direction-aware coordinate encoding to capture structured spatial dependencies along horizontal and vertical axes. This design enhances global representation capability while preserving the efficiency advantages of CNN backbones. Extensive experiments on two widely used benchmarks, Synapse and ACDC, demonstrate that GCA-ResUNet achieves Dice scores of 86.11% and 92.64%, respectively, outperforming a range of representative CNN and Transformer-based methods, including Swin-UNet and TransUNet. In particular, GCA-ResUNet yields consistent improvements in delineating small anatomical structures with complex boundaries. These results indicate that the proposed approach provides a favorable trade-off between segmentation accuracy and computational efficiency, offering a practical and scalable solution for clinical deployment.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Evidence of Spin Frustration in Vanadium Diselenide Monolayer Magnet

Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, direct spectroscopic signatures are established, that identify the metallic 1T-phase and vanadium 3d1 electronic configuration in monolayer VSe2 grown on graphite by molecular-beam epitaxy. Element-specific X-ray magnetic circular dichroism, complemented with magnetic susceptibility measurements, further reveals monolayer VSe2 as a frustrated magnet, with its spins exhibiting subtle correlations, albeit in the absence of a long-range magnetic order down to 2 K and up to a 7 T magnetic field. This observation is attributed to the relative stability of the ferromagnetic and antiferromagnetic ground states, arising from its atomic-scale structural features, such as rotational disorders and edges. The results of this study extend the current understanding of metallic 2D-TMDs in the search for exotic low-dimensional quantum phenomena, and stimulate further theoretical and experimental studies on van der Waals monolayer magnets.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Intrinsic shear transformations in metallic glasses

Plastic flow in amorphous solids is known to be carried by localized shear transformations (STs) which have been proposed to preferentially initiate from some defect units in the structure, akin to dislocations and point defects in crystalline solids. Despite the central role of STs in the mechanical deformation of metallic glasses (MGs), our knowledge of their characteristics has so far been limited to hypothetical models, based on computer simulations using unreleastically high cooling rates. Using combined molecular dynamics (MD) and Monte Carlo (MC) simulations, here we have succeeded in solidifying a metallic liquid at an effective cooling rate as slow as 500 K/s to approach that typical in experiments for producing bulk MGs. Exploiting this realistic MG model, we find that STs do not arise from signature structural defects that can be recognized a priori. Upon yielding, only about 2% of the total atoms participate in STs, each event involving as few as ~10 atoms. These findings rectify the unrealistically high content of liquid-like regions retained in MD-produced glass structures, which has rendered the MG model artificially ductile and under-predicted the sample-wide shear modulus by at least ~20% (with respect to that of experimental BMGs). Our finding sheds light on the scope of intrinsic structural inhomogeneity as well as the indeterministic aspect of the ST emergence under mechanical loading.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Interfacial crystal Hall effect reversible by ferroelectric polarization

The control of spin-dependent properties by voltage, not involving magnetization switching, has significant advantages for low-power spintronics. Here, we predict that the interfacial crystal Hall effect (ICHE) can serve for this purpose. We show that the ICHE can occur in heterostructures composed of compensated antiferromagnetic metals and non-magnetic insulators due to reduced symmetry at the interface, and it can be made reversible if the antiferromagnet is layered symmetrically between two identical ferroelectric layers. We explicitly demonstrate this phenomenon using density functional theory calculations for three material systems: MnBi$_{2}$Te$_{4}$/GeI$_{2}$ and topological In$_{2}$Te$_{3}$/MnBi$_{2}$Te$_{4}$/In$_{2}$Te$_{3}$ van der Waals heterostructures, and GeTe/Ru$_{2}$MnGe/GeTe heterostructure composed of three-dimensional materials. We show that all three systems reveal a sizable ICHE, while the latter two exhibit a quantum ICHE and ICHE, respectively, reversible with ferroelectric polarization. Our proposal opens an alternative direction for voltage controlled spintronics and offers not yet explored possibilities for functional devices by heterostructure design.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Radiation-tolerant high-entropy alloys via interstitial-solute-induced chemical heterogeneities

High-entropy alloys (HEAs) composed of multiple principal elements have been shown to offer improved radiation resistance over their elemental or dilute-solution counterparts. Using NiCoFeCrMn HEA as a model, here we introduce carbon and nitrogen interstitial alloying elements to impart chemical heterogeneities in the form of the local chemical order (LCO) and associated compositional variations. Density functional theory simulations predict chemical short-range order (CSRO) (nearest neighbors and the next couple of atomic shells) surrounding C and N, due to the chemical affinity of C with (Co, Fe) and N with (Cr, Mn). Atomic-resolution chemical mapping of the elemental distribution confirms marked compositional variations well beyond statistical fluctuations. Ni+ irradiation experiments at elevated temperatures demonstrate a remarkable reduction in void swelling by at least one order of magnitude compared to the base HEA without C and N alloying. The underlying mechanism is that the interstitial-solute-induced chemical heterogeneities roughen the lattice as well as the energy landscape, impeding the movements of, and constraining the path lanes for, the normally fast-moving self-interstitials and their clusters. The irradiation-produced interstitials and vacancies therefore recombine more readily, delaying void formation. Our findings thus open a promising avenue towards highly radiation-tolerant alloys.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Two-dimensional antiferroelectric tunnel junction

Ferroelectric tunnel junctions (FTJs), which consist of two metal electrodes separated by a thin ferroelectric barrier, have recently aroused significant interest for technological applications as nanoscale resistive switching devices. So far, most of existing FTJs have been based on perovskite-oxide barrier layers. The recent discovery of the two-dimensional (2D) van der Waals ferroelectric materials opens a new route to realize tunnel junctions with new functionalities and nm-scale dimensions. Due to the weak coupling between the atomic layers in these materials, the relative dipole alignment between them can be controlled by applied voltage. This allows transitions between ferroelectric and antiferroelectric orderings, resulting in significant changes of the electronic structure. Here, we propose to realize 2D antiferroelectric tunnel junctions (AFTJs), which exploit this new functionality, based on bilayer In$_2$X$_3$ (X = S, Se, Te) barriers and different 2D electrodes. Using first-principles density functional theory calculations, we demonstrate that the In$_2$X$_3$ bilayers exhibit stable ferroelectric and antiferroelectric states separated by sizable energy barriers, thus supporting a non-volatile switching between these states. Using quantum-mechanical modeling of the electronic transport, we explore in-plane and out-of-plane tunneling across the In$_2$S$_3$ van der Waals bilayers, and predict giant tunneling electroresistance (TER) effects and multiple non-volatile resistance states driven by ferroelectric-antiferroelectric order transitions. Our proposal opens a new route to realize nanoscale memory devices with ultrahigh storage density using 2D AFTJs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A Freeform Dielectric Metasurface Modeling Approach Based on Deep Neural Networks

Metasurfaces have shown promising potentials in shaping optical wavefronts while remaining compact compared to bulky geometric optics devices. Design of meta-atoms, the fundamental building blocks of metasurfaces, relies on trial-and-error method to achieve target electromagnetic responses. This process includes the characterization of an enormous amount of different meta-atom designs with different physical and geometric parameters, which normally demands huge computational resources. In this paper, a deep learning-based metasurface/meta-atom modeling approach is introduced to significantly reduce the characterization time while maintaining accuracy. Based on a convolutional neural network (CNN) structure, the proposed deep learning network is able to model meta-atoms with free-form 2D patterns and different lattice sizes, material refractive indexes and thicknesses. Moreover, the presented approach features the capability to predict meta-atoms' wide spectrum responses in the timescale of milliseconds, which makes it attractive for applications such as fast meta-atom/metasurface on-demand designs and optimizations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ab initio modeling of the energy landscape for screw dislocations in body-centered cubic high-entropy alloys

In traditional body-centered cubic (bcc) metals, the core properties of screw dislocations play a critical role in plastic deformation at low temperatures. Recently, much attention has been focused on refractory high-entropy alloys (RHEAs), which also possess bcc crystal structures. However, unlike face-centered cubic high-entropy alloys (HEAs), there have been far fewer investigations on bcc HEAs, specifically on the possible effects of chemical short-range order (SRO) in these multiple principal element alloys on dislocation mobility. Here, using density functional theory, we investigate the distribution of dislocation core properties in MoNbTaW RHEAs alloys, and how they are influenced by SRO. The average values of the core energies in the RHEA are found to be larger than those in the corresponding pure constituent bcc metals, and are relatively insensitive to the degree of SRO. However, the presence of SRO is shown to have a large effect on narrowing the distribution of dislocation core energies and decreasing the spatial heterogeneity of dislocation core energies in the RHEA. It is argued that the consequences for the mechanical behavior of HEAs is a change in the energy landscape of the dislocations which would likely heterogeneously inhibit their motion.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Predicting the propensity for thermally activated $β$ events in metallic glasses via interpretable machine learning

The elementary excitations in metallic glasses (MGs), i.e., $β$ processes that involve hopping between nearby sub-basins, underlie many unusual properties of the amorphous alloys. A high-efficacy prediction of the propensity for those activated processes from solely the atomic positions, however, has remained a daunting challenge. Recently, employing well-designed site environment descriptors and machine learning (ML), notable progress has been made in predicting the propensity for stress-activated $β$ processes (i.e., shear transformations) from the static structure. However, the complex tensorial stress field and direction-dependent activation would induce non-trivial noises in the data, limiting the accuracy of the structure-property mapping learned. Here, we focus on the thermally activated elementary excitations and generate high-quality data in several Cu-Zr MGs, allowing quantitative mapping of the potential energy landscape. After fingerprinting the atomic environment with short- and medium-range interstice distribution, ML can identify the atoms with strong resistance or high compliance to thermal activation, at an unprecedented accuracy over ML models for stress-driven activation events. Interestingly, a quantitative "between-task" transferring test reveals that our learnt model can also generalize to predict the propensity of shear transformation. Our dataset is potentially useful for benchmarking future ML models on structure-property relationships in MGs.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Verification of Short-Range Order and Its Impact on the Properties of the CrCoNi Medium Entropy Alloy

Traditional metallic alloys are mixtures of elements where the atoms of minority species tend to distribute randomly if they are below their solubility limit, or lead to the formation of secondary phases if they are above it. Recently, the concept of medium/high entropy alloys (MEA/HEA) has expanded this view, as these materials are single-phase solid solutions of generally equiatomic mixtures of metallic elements that have been shown to display enhanced mechanical properties. However, the question has remained as to how random these solid solutions actually are, with the influence of chemical short-range order (SRO) suggested in computational simulations but not seen experimentally. Here we report the first direct observation of SRO in the CrCoNi MEA using high resolution and energy-filtered transmission electron microscopy. Increasing amounts of SRO give rise to both higher stacking fault energy and hardness. These discoveries suggest that the degree of chemical ordering at the nanometer scale can be tailored through thermomechanical processing, providing a new avenue for tuning the mechanical properties of MEA/HEAs.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Second-Nearest-Neighbor Correlations from Connection of Atomic Packing Motifs in Metallic Glasses and Liquids

Using molecular dynamics simulations, we have studied the atomic correlations characterizing the second peak in the radial distribution function (RDF) of metallic glasses and liquids. The analysis was conducted from the perspective of different connection schemes of atomic packing motifs, based on the number of shared atoms between two linked coordination polyhedra. The results demonstrate that the cluster connections by face-sharing, specifically with three common atoms, are most favored when transitioning from the liquid to glassy state, and exhibit the stiffest elastic response during shear deformation. These properties of the connections and the resultant atomic correlations are generally the same for different types of packing motifs in different alloys. Splitting of the second RDF peak was observed for the inherent structure of the equilibrium liquid, originating solely from cluster connections; this trait can then be inherited in the metallic glass formed via subsequent quenching of the parent liquid through the glass transition, in the absence of any additional type of local structural order. Increasing ordering and cluster connection during cooling, however, may tune the position and intensity of the split peaks.

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preprint2011arXiv

Magnetic and Electronic Properties of Metal-Atom Adsorbed Graphene

We systematically investigate the magnetic and electronic properties of graphene adsorbed with diluted 3d-transition and noble metal atoms using first principles calculation methods. We find that most transition metal atoms (i.e. Sc, Ti, V, Mn, Fe) favor the hollow adsorption site, and the interaction between magnetic adatoms and π-orbital of graphene induces sizable exchange field and Rashba spin-orbit coupling, which together open a nontrivial bulk gap near the Dirac points leading to the quantum-anomalous Hall effect. We also find that the noble metal atoms (i.e. Cu, Ag, Au) prefer the top adsorption site, and the dominant inequality of the AB sublattice potential opens another kind of nontrivial bulk gap exhibiting the quantum-valley Hall effect.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Density functional study of weak ferromagnetism in a thick BiCrO3 film

Very thick films of BiCrO$_3$ have been grown on a SrTiO$_3$ substrate, maintaining a tetragonal lattice up to thicknesses of 14,000Å. Assuming we can treat films of this thickness as bulk crystals, we first calculated the experimentally undetermined atomic positions within the unit cell with the measured lattice constant of the film, then relaxed the lattice constants along with the atomic positions. All the calculations result in an antiferroelectric crystal with the {\it Pnma} space group with noncollinear Bi displacements. We find G-type antiferromagnetism with a spin-orbit induced weak ferromagnetic component, however, the weak ferromagnetic component can cancel if the antiferromagnetic spins are oriented along a particular one of the three 2-fold rotation axes.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Quantum Anomalous Hall Effect in Graphene from Rashba and Exchange Effects

We investigate the possibility of realizing quantum anomalous Hall effect in graphene. We show that a bulk energy gap can be opened in the presence of both Rashba spin-orbit coupling and an exchange field. We calculate the Berry curvature distribution and find a non-zero Chern number for the valence bands and demonstrate the existence of gapless edge states. Inspired by this finding, we also study, by first principles method, a concrete example of graphene with Fe atoms adsorbed on top, obtaining the same result.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Three-Dimensional Topological Insulators in I-III-VI$_2$ and II-IV-V$_2$ Chalcopyrite Semiconductors

The recent discovery of topological insulators with exotic metallic surface states has garnered great interest in the fields of condensed matter physics and materials science. A number of spectacular quantum phenomena have been predicted when the surface states are under the influence of magnetism and superconductivity, which could open up new opportunities for technological applications in spintronics and quantum computing. To achieve this goal, material realization of topological insulators with desired physical properties is of crucial importance. Based on first-principles calculations, here we show that a large number of ternary chalcopyrite compounds of composition I-III-VI$_2$ and II-IV-V$_2$ can realize the topological insulating phase in their native states. The crystal structure of chalcopyrites is derived from the frequently used zinc-blende structure, and many of them possess a close lattice match to important mainstream semiconductors, which is essential for a smooth integration into current semiconductor technology. The diverse optical, electrical and structural properties of chalcopyrite semiconductors, and particularly their ability to host room-temperature ferromagnetism, make them appealing candidates for novel spintronic devices.

0 citations0 reviewsNo code linkedOpen access