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Jonathan Trinastic

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2015arXiv

Preventing rapid energy loss from electron-hole pairs to phonons in graphene quantum dots

In semiconductors, photoexcited electrons and holes (carriers) initially occupy high-energy states, but quickly lose energy to phonons and relax to the band edge within a picosecond [1]. Increasing the lifetime of carriers in light-absorbing materials is necessary to improve open-circuit voltage in photovoltaics [2], charge separation in organic solar cells [3], and charge transfer in photodetection de vices [4]. Here we demonstrate long lifetimes over one hundred picoseconds for electron-hole pairs in graphene quantum dots (GQDs) due to large transition energies and weak coupling to excitonic states below the fundamental band gap. This possibility for a large transition energy to bound excitons is due to graphene's poor screening, illustrating a unique mechanism in this QD to occupy higher-energy states for long timescales. GQD edges can be terminated with either armchair or zigzag carbon patterns, and this edge structure changes excited state lifetimes by orders of magnitude. These results indicate nanoscale control of carrier lifetimes in optoelectronics.

preprint2014arXiv

First-principles study of multi-control graphene doping using light-switching molecules

The high carrier mobility in graphene promises its utility in electronics applications. Azobenzene is a widely studied organic molecule for switchable optoelectronic devices that can be synthesized with a wide variety of ligands and deposited on graphene. Using first-principles calculations, we investigate graphene doping by physisorbed azobenzene molecules with various electron-donating and -accepting ligands. We confirm previous experimental results that demonstrate greater p-doping of graphene for the trans compared to cis configuration when using a SO$_3$ electron-accepting ligand, however we find that NO$_2$ ligands maximize the p-doping difference between isomers. We also examine how these doping effects change when the graphene monolayer is supported on a silica substrate. We then extend these findings by examining the doping effects of an applied electrical bias and mechanical strain to the graphene, which lead to changes in doping for both the trans and cis isomers. These results demonstrate a new type of multi-control device combining light, electric field, and strain to change carrier concentration in graphene.

preprint2014arXiv

Using Light-Switching Molecules to Modulate Charge Mobility in a Quantum Dot Array

We have studied the electron hopping in a two-CdSe quantum dot system linked by an azobenzene-derived light-switching molecule. This system can be considered as a prototype of a QD supercrystal. Following the computational strategies given in our recent work [Chu et al. J. Phys. Chem. C 115, 21409 (2011)], we have investigated the effects of molecular attachment, molecular isomer (trans and cis) and QD size on electron hopping rate using Marcus theory. Our results indicate that molecular attachment has a large impact on the system for both isomers. In the most energetically favorable attachment, the cis isomer provides significantly greater coupling between the two QDs and hence the electron hopping rate is greater compared to the trans isomer. As a result, the carrier mobility of the QD array in the low carrier density, weak external electric field regime is several orders of magnitude higher in the cis compared to the trans configuration. This is the first demonstration of mobility modulation using QDs and azobenzene that could lead to a new type of switching device.

preprint2013arXiv

First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions

The optimal Co concentration in Fe$_{1-x}$Co$_{x}$/MgO magnetic tunnel junctions (MTJs) that maximizes tunneling magnetoresistance (TMR) is still under investigation. We perform a first-principles transport study on MTJs using disordered electrodes modeled using the virtual crystal approximation (VCA) and ordered alloys with various MgO barrier thicknesses. We find that 10-20$%$ Co concentration maximizes TMR using VCA to represent disorder in the electrodes. This TMR peak arises due to a minority d-type interfacial resonance state (IRS) that becomes filled with small Co doping, leading to a decrease in antiparallel conductance. Calculations with ordered Fe$_{1-x}$Co$_{x}$ electrodes confirm the filling of this minority d-type IRS for small Co concentrations. In addition, we construct a 10x10 supercell without VCA to explicitly represent disorder at the Fe$_{1-x}$Co$_x$/MgO interface, which demonstrates a quenching of the minority-d IRS and significant reduction in available states at the Fermi level that agrees with VCA calculations. These results explain recent experimental findings and provide implications for the impact of IRS on conductance and TMR in Fe$_{1-x}$Co$_x$/MgO tunnel junctions.