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Hai-Ping Cheng

Hai-Ping Cheng appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.chem-phphysics.comp-phquant-phcond-mat.str-elcond-mat.supr-concond-mat.dis-nn

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Published work

36 published item(s)

preprint2026arXiv

Simulating decoherence of two coupled spins using the generalized cluster correlation expansion

We simulate the coherence of two coupled electron spins interacting with a bath of nuclei using the generalized cluster correlation expansion (gCCE) method. An exchange interaction between the electrons facilitates a family of entangling gates that can be spoiled by nuclear-induced dephasing. Consequently, we study the dephasing of the coherent two-electron system by characterizing the $T_2$ and $T_2^*$ of the two-electron reduced density matrix for various system parameters in the range mimicking magnetic molecules, including magnetic field strength and orientation, exchange interaction strength, distance between the two spins, minimum distance between electron and nuclei and between nuclei, and nuclei density. We find the optimal regime for each parameter in which the coherence time is maximized and provide a physical understanding of it.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Clar's goblet on graphene: field modulated charge transfer in a hydrocarbon heterostructure

In certain configurations, the aromatic properties of benzene ring structured molecules allow for unpaired, reactive valence electrons (known as radicals). Clar's goblets are such molecules. With an even number of unpaired radicals, these nanographenes are topologically frustrated hydrocarbons in which pi-bonding network and topology of edges give rise to the magnetism. Clar's goblets are therefore valued as prospective qubits provided they can be modulated between magnetic states. Using first principles DFT, we demonstrate the effects of adsorption on both molecule and substrate in a graphene-Clar's goblet heterostructure. We look at the energy difference bewteen FM and AFM states of the system and discuss underlying physical and chemical mechanisms in reference to the highest occupied molecular orbital (HOMO) and second HOMO (HOMO-1). We find that the HOMO of the molecule in the FM state is right at the Fermi surface, which leads to the hybridization between molecular state and the graphene state near the Dirac point. Furthermore, we investigate qualitative changes in charge realignment and magnetic state under variable electric field. Transitions from FM to AFM and back to FM states are observed.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

cRPA calculation of on-site and nearest neighbor Coulomb interaction of $LaNiO_2$

We present first-principle calculation of the on-site and nearest neighbor Coulomb interaction strength of the Ni $d$ orbitals in bulk $LaNiO_{2}$, using the constrained Random Phase Approximation method. The nearest neighbor correlation within Ni-O plane turns out to be more significant when considering the frequency dependent $U(ω)$, which can be as strong as about 25\% of the on-site value at medium and high frequencies. The inter Ni-O plane nearest neighbor correlation is found to be the same strength as that within the Ni-O plane, indicating the material is non-locally correlated also between the Ni-O planes.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Insights to negative differential resistance in \texorpdfstring{MoS\textsubscript{2}}{MoS2} Esaki diodes: a first-principles perspective

\ce{MoS_2} is a two dimensional material with a band gap depending on the number of layers and tunable by an external electric field. The experimentally observed intralayer band-to-band tunneling and interlayer band-to-band tunneling in this material present an opportunity for new electronic applications in tunnel field effect transistors. However, such a widely accepted concept has never been supported up by theoretical investigations based on first principles. In this work, using density functional theory, in conjunction with non-equilibrilibrium Green's function techniques and our electric field gating method, enabled by a large-scale computational approach, we study the relation between band alignment and transmission in planar and side-stack \ce{MoS_2} $p$-$i$-$n$ junction configurations. We demonstrate the presence of negative differential resistance for both in-plane and interlayer current, a staple characteristic of tunnel diode junctions, and analyze the physical origin of such an effect. Electrostatic potentials, the van der Waals barrier, and complex band analysis are also examined for a thorough understanding of Esaki Diodes.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Magnetic molecule tunnel heterojunctions

We characterize molecular magnet heterojunctions in which sublimated CoPc films as thin as 5 nm are sandwiched between transparent conducting bottom-layer indium tin oxide and top-layer soft-landing eutectic GaIn (EGaIn) electrodes. The roughness of the cobalt phthalocyanine (CoPc) films was determined by atomic force microscopy to be on the order of several nanometers, and crystalline ordering of lying-down planar molecules was confirmed by X-ray diffraction. The current-voltage (I-V) characteristics reveal the onset of a superconducting gap at Tc = 6 K, which together with higher temperature fits to a modified Simmons' model, provide incontrovertible evidence for direct quantum mechanical tunneling processes through the magnetic molecules in our heterojunctions. The voltage dependent features in the differential conductance measurements relate to spin states of single molecules or aggregates of molecules and should prove to be important for quantum information device development.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Single-Molecule Magnet Mn$_{12}$ on GaAs-supported Graphene: Gate Field Effects From First Principles

We study gate field effects on the Mn$_{12}$O$_{12}$(COOH)$_{16}$(H$_2$O)$_4$ | graphene | GaAs heterostructure via first-principles calculations. We find that under moderate doping levels electrons can be added to but not taken from the single-molecule magnet Mn$_{12}$O$_{12}$(COOH)$_{16}$(H$_2$O)$_4$ (Mn$_{12}$). The magnetic anisotropy energy (MAE) of Mn$_{12}$ decreases as the electron doping level increases, due to electron transfer from graphene to Mn$_{12}$ and change in the band alignment between Mn$_{12}$ and graphene. At an electron doping level of $-5.00 \times 10^{13}\, \textrm{cm}^{-2}$, the MAE decreases by about 18% compared with zero doping. The band alignment between graphene and GaAs is more sensitive to electron doping than to hole doping since the valence band of GaAs is close to the Fermi level. The GaAs substrate induces a small bandgap in the supported graphene under the zero gate field and a nearly strain-free configuration. Finally, we propose a vertical tunnel junction for probing the gate dependence of MAE via electron transport measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Using hyper-optimized tensor networks and first-principles electronic structure to simulate experimental properties of the giant {Mn84} torus

The single-molecule magnet {Mn84} is a challenge to theory due to its high nuclearity. Building on our prior work which characterized the structure of the spectrum of this magnet, we directly compute two experimentally accessible observables, the field-dependent magnetization up to 75 T and the temperature-dependent heat capacity, using parameter free theory. In particular, we use first principles calculations to derive short- and long-range exchange interactions, while we compute the exact partition function of the resulting classical Potts and Ising spin models for all 84 Mn $S=2$ spins to obtain the observables. The latter computation is possible because of a simulation methodology that uses hyper-optimized tensor network contraction, borrowing from recent techniques developed to simulate quantum supremacy circuits. We also synthesize the magnet and measure its heat capacity and field-dependent magnetization. We observe good qualitative agreement between theory and experiment, identifying an unusual peak in the heat capacity in both, as well as a plateau in the magnetization. Our work also identifies some limitations of current theoretical modeling in large magnets, such as the sensitivity to small, long-range, exchange couplings.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Dzyaloshinskii-Moriya Interaction-Induced Magnetoelectric Coupling in a tetrahedral Molecular Spin-Frustrated System

We have investigated magnetoelectric coupling in the single-molecule magnet $\mathrm{Mn}_{4}\mathrm{Te}_{4}(\mathrm{P}\mathrm{Et}_{3})_{4}$ with tetrahedral spin frustration. Our density functional studies found that an electric dipole moment can emerge with various non-collinear spin orderings. The forms of spin-dependent dipole are determined and consistent with that in non-centrosymmetric magnets driven by the Dzyaloshinskii-Moriya interaction. Writing a parameterized spin Hamiltonian, after solving for eigenvalues and eigenstates we quantified the magnetoelectric coupling by calculating the thermal average of the electric and magnetic susceptibilities, which can be influenced by external magnetic and electric fields, respectively. The quadratic relations are expected to be observable in experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Flexibility of the factorized form of the unitary coupled cluster ansatz

The factorized form of the unitary coupled cluster ansatz is a popular state preparation ansatz for electronic structure calculations of molecules on quantum computers. It often is viewed as an approximation (based on the Trotter product formula) for the conventional unitary coupled cluster operator. In this work, we show that the factorized form is quite flexible, allowing one to range from conventional configuration interaction, to conventional unitary coupled cluster, to efficient approximations that lie in between these two. The variational minimization of the energy often allows simpler factorized unitary coupled cluster approximations to achieve high accuracy, even if they do not accurately approximate the Trotter product formula. This is similar to how quantum approximate optimization algorithms can achieve high accuracy with a small number of levels.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Universal quantum operation of spin-3/2 Blume-Capel chains

We propose a logical qubit based on the Blume-Capel model: a higher spin generalization of the Ising chain and which allows for an on-site anisotropy preserving rotational invariance around the Ising axis. We show that such a spin-3/2 Blume-Capel model can also support localized Majorana bound states at the ends of the chain. Inspired by known braiding protocols of these Majorana bound states, upon appropriate manipulation of the system parameters, we demonstrate a set of universal gate operations which act on qubits encoded in the doubly degenerate ground states of the chain.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Analysis of exchange interactions in dimers of Mn3 single-molecule magnets, and their sensitivity to external pressure

In light of the potential use of single-molecule magnets (SMMs) in emerging quantum information science initiatives, we report first-principles calculations of the magnetic exchange interactions in [$\mathrm{Mn}_{3}$]$_{2}$ dimers of $\mathrm{Mn}_3$ SMMs, connected by covalently-attached organic linkers, that have been synthesized and studied experimentally by magnetochemistry and EPR spectroscopy. Energy evaluations calibrated to experimental results give the sign and order of magnitude of the exchange coupling constant ($J_{12}$) between the two $\mathrm{Mn}_{3}$ units that match with fits of magnetic susceptibility data and EPR spectra. Downfolding into the $\mathrm{Mn}$ $d$-orbital basis, Wannier function analysis has shown that magnetic interactions can be channeled by ligand groups that are bonded by van der Waals interaction and/or by the linkers via covalent bonding of specific systems, and effective tight-binding Hamiltonians are obtained. We call this long-range coupling that involves a group of atoms a collective exchange. Orbital projected spin density of states and alternative Wannier transformations support this observation. To assess the sensitivity of $J_{12}$ to external pressure, stress-strain curves have been investigated for both hydrostatic and uniaxial pressure, which have revealed a switch of $J_{12}$ from ferromagnetic to antiferromagnetic with increasing pressure.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Exploring the magnetic properties of the largest single molecule magnets

The giant $\{ \mathrm{Mn}_{70} \}$ and $\{ \mathrm{Mn}_{84} \}$ wheels are the largest nuclearity single-molecule magnets synthesized to date and understanding their magnetic properties poses a challenge to theory. Starting from first principles calculations, we explore the magnetic properties and excitations in these wheels using effective spin Hamiltonians. We find that the unusual geometry of the superexchange pathways leads to weakly coupled $\{ \mathrm{Mn}_{7} \}$ subunits carrying an effective $S=2$ spin. The spectrum exhibits a hierarchy of energy scales and massive degeneracies, with the lowest energy excitations arising from Heisenberg-ring-like excitations of the $\{ \mathrm{Mn}_{7} \}$ subunits around the wheel, at energies consistent with the observed temperature dependence of the magnetic susceptibility. We further suggest an important role for weak longer-range couplings in selecting the precise spin ground-state of the $\mathrm{Mn}$ wheels out of the nearly degenerate ground-state band.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

First-principles calculation of gate-tunable ferromagnetism in magic-angle twisted bilayer graphene under pressure

Magic-angle twisted bilayer graphene (MATBG) is notable as a highly tunable platform for investigating strongly correlated phenomena such as high-$T_c$ superconductivity and quantum spin liquids, due to easy control of doping level through gating and sensitive dependence of the magic angle on hydrostatic pressure. Experimental observations of correlated insulating states, unconventional superconductivity and ferromagnetism in MATBG indicate that this system exhibits rich exotic phases. In this work, using density functional theory calculations in conjunction with the effective screening medium method, we find the MATBG under pressure at a twisting angle of $2.88\unicode{xb0}$ and simulate how its electronic states evolve when doping level and out-of-plane electric field are gate-tuned. Our calculations show that, at doping levels between two electrons and four holes per moiré unit cell, a ferromagnetic solution with spin density localized at AA stacking sites is lower in energy than the nonmagnetic solution. The magnetic moment of this ferromagnetic state decreases with both electron and hole doping and vanishes at four electrons/holes doped per moiré unit cell. Hybridization between the flat bands at the Fermi level and the surrounding dispersive bands can take place at finite doping. Moreover, upon increasing the out-of-plane electric field at zero doping, a transition from the ferromagnetic state to the nonmagnetic one is seen. We also analyze the interlayer bonding character due to the flat bands via Wannier functions. Finally, we report trivial band topology of the flat bands in the ferromagnetic state at a certain doping level.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

First-Principles study of an S = 1 quasi-1D quantum molecular magnetic material

We use density functional theory to study the structural, magnetic and electronic structure of the organo-metallic quantum magnet $\mathrm{NiCl_2-4SC(NH_2)_2}$ (DTN). Recent work has demonstrated the quasi-1D nature of the molecular crystal and its quantum phase transitions at low temperatures. This includes a magneto-electric coupling and, when doped with Br, the presence of an exotic Bose-glass state. We systematically show that, by using the generalized gradient approximation (GGA) with inclusion of a van der Waals term to account for weak inter-molecular forces and by introducing a Hubbard $U$ term to the total energy, our calculations reproduce the magnetic anisotropy, the inter-molecular exchange coupling strength and the magneto-electric effect in DTN, which were observed in previous experiments. Further analysis into the electronic structure gives insight into the underlying magnetic interactions, including what mechanisms may be causing the ME effect. Using this computationally efficient model, we predict what effect applying an electric field might have on the magnetic properties of this quantum magnet.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate field effects on the topological insulator BiSbTeSe2 interface

Interfaces between two topological insulators are of fundamental interest in condensed matter physics. Inspired by experimental efforts, we study interfacial processes between two slabs of BiSbTeSe2 (BSTS) via first principles calculations. Topological surface states are absent for the BSTS interface at its equilibrium separation, but our calculations show that they appear if the inter-slab distance is greater than 6 Ang. More importantly, we find that topological interface states can be preserved by inserting two or more layers of hexagonal boron nitride between the two BSTS slabs. In experiments, the electric current tunneling through the interface is insensitive to back gate voltage when the bias voltage is small. Using a first-principles based method that allows us to simulate gate field, we show that at low bias the extra charge induced by a gate voltage resides on the surface that is closest to the gate electrode, leaving the interface almost undoped. This provides clues to understand the origin of the observed insensitivity of transport properties to back voltage at low bias. Our study resolves a few questions raised in experiment, which does not yet offer a clear correlation between microscopic physics and transport data. We provide a road map for the design of vertical tunneling junctions involving the interface between two topological insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Theoretical Prediction of Magnetic Exchange Coupling Constants from Broken-Symmetry Coupled Cluster Calculations

Exchange coupling constants ($J$) are fundamental to the understanding of spin spectra of magnetic systems. Here we investigate the broken-symmetry (BS) approaches of Noodleman and Yamaguchi in conjunction with coupled cluster (CC) methods to obtain exchange couplings. $J$ values calculated from CC in this fashion converge smoothly towards the FCI result with increasing level of CC excitation. We compare this BS-CC scheme to the complementary EOM-CC approach on a selection of bridged molecular cases and give results from a few other methodologies for context.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Three Jahn-Teller states of matter in the spin-crossover system Mn(taa)

Three high-spin phases recently discovered in the spin-crossover system Mn(taa) are identified through analysis by a combination of first-principles calculations and Monte Carlo simulation as a low-temperature Jahn-Teller ordered (solid) phase, an intermediate-temperature dynamically correlated (liquid) phase, and an uncorrelated (gas) phase. In particular, the Jahn-Teller liquid phase arises from competition between mixing with low-spin impurities, which drive the disorder, and inter-molecular strain interactions. The latter are a key factor in both the spin-crossover phase transition and the magnetoelectric coupling. Jahn-Teller liquids may exist in other spin-crossover materials and materials that have multiple equivalent Jahn-Teller axes.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

All-electron self-consistent GW in the Matsubara-time domain: implementation and benchmarks of semiconductors and insulators

The GW approximation is a well-known method to improve electronic structure predictions calculated within density functional theory. In this work, we have implemented a computationally efficient GW approach that calculates central properties within the Matsubara-time domain using the modified version of Elk, the full-potential linearized augmented plane wave (FP-LAPW) package. Continuous-pole expansion (CPE), a recently proposed analytic continuation method, has been incorporated and compared to the widely used Pade approximation. Full crystal symmetry has been employed for computational speedup. We have applied our approach to 18 well-studied semiconductors/insulators that cover a wide range of band gaps computed at the levels of single-shot G0W0, partially self-consistent GW0, and fully self-consistent GW (scGW). Our calculations show that G0W0 leads to band gaps that agree well with experiment for the case of simple s-p electron systems, whereas scGW is required for improving the band gaps in 3-d electron systems. In addition, GW0 almost always predicts larger band gap values compared to scGW, likely due to the substantial underestimation of screening effects. Both the CPE method and Pade approximation lead to similar band gaps for most systems except strontium titantate, suggesting further investigation into the latter approximation is necessary for strongly correlated systems. Our computed band gaps serve as important benchmarks for the accuracy of the Matsubara-time GW approach.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electron transport in graphene/graphene side-contact junction by plane-wave multiple scattering method

Electron transport in graphene is along the sheet but junction devices are often made by stacking different sheets together in a "side-contact" geometry which causes the current to flow perpendicular to the sheets within the device. Such geometry presents a challenge to first-principles transport methods. We solve this problem by implementing a plane-wave based multiple scattering theory for electron transport. This implementation improves the computational efficiency over the existing plane-wave transport code, scales better for parallelization over large number of nodes, and does not require the current direction to be along a lattice axis. As a first application, we calculate the tunneling current through a side-contact graphene junction formed by two separate graphene sheets with the edges overlapping each other. We find that transport properties of this junction depend strongly on the AA or AB stacking within the overlapping region as well as the vacuum gap between two graphene sheets. Such transport behaviors are explained in terms of carbon orbital orientation, hybridization, and delocalization as the geometry is varied.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

First-principles Simulations of a Graphene Based Field-Effect Transistor

We improvise a novel approach to carry out first-principles simulations of graphene-based vertical field effect tunneling transistors that consist of a graphene$|${\it h}-BN$|$graphene multilayer structure. Within the density functional theory framework, we exploit the effective screening medium (ESM) method to properly treat boundary conditions for electrostatic potentials and investigate the effect of gate voltage. The distribution of free carriers and the band structure of both top and bottom graphene layers are calculated self-consistently. The dielectric properties of {\it h}-BN thin films sandwiched between graphene layers are computed layer-by-layer following the theory of microscopic permittivity. We find that the permittivities of BN layers are very close to that of crystalline {\it h}-BN. The effect of interface with graphene on the dielectric properties of {\it h}-BN is weak, according to an analysis on the interface charge redistribution.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Preventing rapid energy loss from electron-hole pairs to phonons in graphene quantum dots

In semiconductors, photoexcited electrons and holes (carriers) initially occupy high-energy states, but quickly lose energy to phonons and relax to the band edge within a picosecond [1]. Increasing the lifetime of carriers in light-absorbing materials is necessary to improve open-circuit voltage in photovoltaics [2], charge separation in organic solar cells [3], and charge transfer in photodetection de vices [4]. Here we demonstrate long lifetimes over one hundred picoseconds for electron-hole pairs in graphene quantum dots (GQDs) due to large transition energies and weak coupling to excitonic states below the fundamental band gap. This possibility for a large transition energy to bound excitons is due to graphene's poor screening, illustrating a unique mechanism in this QD to occupy higher-energy states for long timescales. GQD edges can be terminated with either armchair or zigzag carbon patterns, and this edge structure changes excited state lifetimes by orders of magnitude. These results indicate nanoscale control of carrier lifetimes in optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

All-Electron GW Quasiparticle Band Structures of Group 14 Nitride Compounds

We have investigated the group 14 nitrides (M$_3$N$_4$) in the spinel phase ($γ$-M$_3$N$_4$ with M= C, Si, Ge and Sn) and $β$ phase ($β$-M$_3$N$_4$ with M= Si, Ge and Sn) using density functional theory with the local density approximation and the GW approximation. The Kohn-Sham energies of these systems have been first calculated within the framework of full-potential linearized augmented plane waves and then corrected using single-shot G$_0$W$_0$ calculations, which we have implemented in the modified version of the Elk full-potential LAPW code. Direct band gaps at the $Γ$ point have been found for spinel-type nitrides $γ$-M$_3$N$_4$ with M= Si, Ge and Sn. The corresponding GW-corrected band gaps agree with experiment. We have also found that the GW calculations with and without the plasmon-pole approximation give very similar results, even when the system contains semi-core $d$ electrons. These spinel-type nitrides are novel materials for potential optoelectronic applications because of their direct and tunable band gaps.

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preprint2014arXiv

Do Se vacancies electron dope monolayer FeSe?

Following the discovery of the potentially very high temperature superconductivity in monolayer FeSe we investigate the doping effect of Se vacancies in these materials. We find that Se vacancies pull a vacancy centered orbital below the Fermi energy that absorbs most of the doped electrons. Furthermore we find that the disorder induced broadening causes an effective hole doping. The surprising net result is that in terms of the band structure Se vacancies behave like hole dopants rather than electron dopants. Our results exclude Se vacancies as the origin of the large electron pockets measured by angle resolved photoemission spectroscopy.

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preprint2014arXiv

First-principles study of multi-control graphene doping using light-switching molecules

The high carrier mobility in graphene promises its utility in electronics applications. Azobenzene is a widely studied organic molecule for switchable optoelectronic devices that can be synthesized with a wide variety of ligands and deposited on graphene. Using first-principles calculations, we investigate graphene doping by physisorbed azobenzene molecules with various electron-donating and -accepting ligands. We confirm previous experimental results that demonstrate greater p-doping of graphene for the trans compared to cis configuration when using a SO$_3$ electron-accepting ligand, however we find that NO$_2$ ligands maximize the p-doping difference between isomers. We also examine how these doping effects change when the graphene monolayer is supported on a silica substrate. We then extend these findings by examining the doping effects of an applied electrical bias and mechanical strain to the graphene, which lead to changes in doping for both the trans and cis isomers. These results demonstrate a new type of multi-control device combining light, electric field, and strain to change carrier concentration in graphene.

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preprint2014arXiv

Using Light-Switching Molecules to Modulate Charge Mobility in a Quantum Dot Array

We have studied the electron hopping in a two-CdSe quantum dot system linked by an azobenzene-derived light-switching molecule. This system can be considered as a prototype of a QD supercrystal. Following the computational strategies given in our recent work [Chu et al. J. Phys. Chem. C 115, 21409 (2011)], we have investigated the effects of molecular attachment, molecular isomer (trans and cis) and QD size on electron hopping rate using Marcus theory. Our results indicate that molecular attachment has a large impact on the system for both isomers. In the most energetically favorable attachment, the cis isomer provides significantly greater coupling between the two QDs and hence the electron hopping rate is greater compared to the trans isomer. As a result, the carrier mobility of the QD array in the low carrier density, weak external electric field regime is several orders of magnitude higher in the cis compared to the trans configuration. This is the first demonstration of mobility modulation using QDs and azobenzene that could lead to a new type of switching device.

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preprint2013arXiv

Does Silicene on Ag(111) Have a Dirac Cone?

We investigate the currently debated issue of the existence of the Dirac cone in silicene on an Ag(111) surface, using first-principles calculations based on density functional theory to obtain the band structure. By unfolding the band structure in the Brillouin zone of a supercell to that of a primitive cell, followed by projecting onto Ag and silicene subsystems, we demonstrate that the Dirac cone in silicene on Ag(111) is destroyed. Our results clearly indicate that the linear dispersions observed in both angular-resolved photoemission spectroscopy (ARPES) [P. Vogt et al, Phys. Rev. Lett. 108, 155501 (2012)] and scanning tunneling spectroscopy (STS) [L. Chen et al, Phys. Rev. Lett. 109, 056804 (2012)] come from the Ag substrate and not from silicene.

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preprint2013arXiv

Electron Transport Through Ag-Silicene-Ag Junctions

For several years the electronic structure properties of the novel two-dimensional system silicene have been studied extensively. Electron transport across metal-silicence junctions, however, remains relatively unexplored. To address this issue, we developed and implemented a theoretical framework that utilizes the tight-binding Fisher-Lee relation to span non-equilibrium Green's function (NEGF) techniques, the scattering method, and semiclassical Boltzmann transport theory. Within this hybrid quantum-classical, two-scale framework, we calculated transmission and reflection coefficients of monolayer and bilayer Ag-silicene-Ag junctions using the NEGF method in conjunction with density functional theory; derived and calculated the group velocities; and computed resistance using the semi-classical Boltzmann equation. We found that resistances of these junctions are $\sim${}$ 0.08 \fom$ for monolayer silicene junctions and $\sim${}$ 0.3 \fom$ for bilayer ones, factors of $\sim$8 and $\sim$2, respectively, smaller than Sharvin resistances estimated via the Landauer formalism.

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preprint2013arXiv

First-Principles Studies of Photoinduced Charge Transfer in Noncovalently Functionalized Carbon Nanotubes

We have studied the energetics, electronic structure, optical excitation, and electron relaxation of dinitromethane molecules (CH$_{2}$N$_{2}$O$_{4}$) adsorbed on semiconducting carbon nanotubes (CNTs) of chiral index (n,0) (n=7, 10, 13, 16, 19). Using first-principles density functional theory (DFT) with generalized gradient approximations and van der Waals corrections, we have calculated adsorption energies of dinitropentylpyrene, in which the dinitromethane is linked to the pyrene via an aliphatic chain, on a CNT. A 75.26 kJ/mol binding energy has been found, which explains why such aliphatic chain-pyrene units can be and have been used in experiments to bind functional molecules to CNTs. The calculated electronic structures show that the dinitromethane introduces a localized state inside the band gap of CNT systems of n=10, 13, 16 and 19; such a state can trap an electron when the CNT is photoexcited. We have therefore investigated the dynamics of intra-band relaxations using the reduced density matrix formalism in conjunction with DFT. For pristine CNTs, we have found that the calculated charge relaxation constants agree well with the experimental time scales. Upon adsorption, these constants are modified, but there is not a clear trend for the direction and magnitude of the change. Nevertheless, our calculations predict that electron relaxation in the conduction band is faster than hole relaxation in the valence band for CNTs with and without molecular adsorbates.

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preprint2013arXiv

First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions

The optimal Co concentration in Fe$_{1-x}$Co$_{x}$/MgO magnetic tunnel junctions (MTJs) that maximizes tunneling magnetoresistance (TMR) is still under investigation. We perform a first-principles transport study on MTJs using disordered electrodes modeled using the virtual crystal approximation (VCA) and ordered alloys with various MgO barrier thicknesses. We find that 10-20$%$ Co concentration maximizes TMR using VCA to represent disorder in the electrodes. This TMR peak arises due to a minority d-type interfacial resonance state (IRS) that becomes filled with small Co doping, leading to a decrease in antiparallel conductance. Calculations with ordered Fe$_{1-x}$Co$_{x}$ electrodes confirm the filling of this minority d-type IRS for small Co concentrations. In addition, we construct a 10x10 supercell without VCA to explicitly represent disorder at the Fe$_{1-x}$Co$_x$/MgO interface, which demonstrates a quenching of the minority-d IRS and significant reduction in available states at the Fermi level that agrees with VCA calculations. These results explain recent experimental findings and provide implications for the impact of IRS on conductance and TMR in Fe$_{1-x}$Co$_x$/MgO tunnel junctions.

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preprint2012arXiv

Electronic and transport properties of azobenzene monolayer junctions as molecular switches

We investigate from first-principles the change in transport properties of a two-dimensional azobenzene monolayer sandwiched between two Au electrodes that undergoes molecular switching. We focus on transport differences between a chemisorbed and physisorbed top monolayer-electrode contact. The conductance of the monolayer junction with a chemisorbed top contact is higher in trans configuration, in agreement with the previous theoretical predictions of one-dimensional single molecule junctions. However, with a physisorbed top contact, the "ON" state with larger conductance is associated with the cis configuration due to a reduced effective tunneling pathway by switching from trans to cis, which successfully explains recently experimental measurements of azobenzene monolayer junctions. A simple model is developed to explain electron transmission across subsystems in the molecular junction. We also discuss the effects of monolayer packing density, molecule tilt angle, and contact geometry on the calculated transmission functions. In particular, we find that a tip-like contact with chemisorption significantly affects the electric current through the cis monolayer, leading to highly asymmetric current-voltage characteristics as well as large negative differential resistance behavior.

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preprint2012arXiv

Molecular Magnetocapacitance

Capacitance of a nanoscale system is usually thought of having two contributions, a classical electrostatic contribution and a quantum contribution dependent on the density of states and/or molecular orbitals close to the Fermi energy. In this letter we demonstrate that in molecular nano-magnets and other magnetic nanoscale systems, the quantum part of the capacitance becomes spin-dependent, and is tunable by an external magnetic field. This molecular magnetocapacitance can be realized using single molecule nano-magnets and/or other nano-structures that have antiferromagnetic ground states. As a proof of principle, first-principles calculation of the nano-magnet [Mn3O(sao)3(O2CMe)(H2O)(py)3] shows that the charging energy of the high-spin state is 260 meV lower than that of the low-spin state, yielding a 6% difference in capacitance. A magnetic field of ~40T can switch the spin state, thus changing the molecular capacitance. A smaller switching field may be achieved using nanostructures whose physical properties such as magnetic moment are size-dependent. Molecular magnetocapacitance may lead to revolutionary device designs, e.g., by exploiting the Coulomb blockade magnetoresistance whereby a small change in capacitance can lead to a huge change in resistance.

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preprint2012arXiv

Oxygen reduction activity on perovskite oxide surfaces: a comparative first-principle study of LaMnO$_3$, LaFeO$_3$ and LaCrO$_3$

The understanding of oxygen reduction reaction (ORR) activity on perovskite oxide surfaces is essential for promising future fuel cell applications. We report a comparative study of ORR mechanisms on La$B$O$_3$ ($B$=Mn, Fe, Cr) surfaces by first-principles calculations based on density functional theory (DFT). Results obtained from varied DFT methods such as generalized gradient approximation(GGA), GGA+$U$ and the hybrid Hartree-Fock density functional method are reported for comparative purposes. We find that the results calculated from hybrid-functional method suggest that the order of ORR activity is LaMnO$_3$ $>$ LaCrO$_3$ $>$ LaFeO$_3$, which is in better agreement with recent experimental results (Suntivich \textit{et al.}, Nature Chemistry 3, 546 (2011)) than those using the GGA or GGA+$U$ method.

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preprint2011arXiv

Perfect Spin-filtering and Giant Magnetoresistance with Fe-terminated Graphene Nanoribbon

Spin-dependent electronic transport properties of Fe-terminated zig-zag graphene nanoribbons (zGNR) have been studied using first-principles transport simulations. The spin configuration of proposed zGNR junction can be controlled with external magnetic field, and the tunneling junction show MR>1000 at small bias and is a perfect spin-filter by applying uniform external magnetic filed at small bias.

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preprint2010arXiv

Accurate projected augmented wave datasets for BaFe$_2$As$_2$

By carefully choosing parameters and including more semi-core orbitals as valence electrons, we have constructed a high quality projected augmented wave (PAW) dataset that yields results comparable to existing full-potential linearized augmented plane-wave calculations. The dataset was then applied to BaFe$_2$As$_2$ to study the effects of different levels of structure optimization, as well as different choices of exchange-correlation functionals. It is found that the LDA exchange-correlation functional fails to find the correct SDW-AFM ground state under full optimization, while PBE exchange-correlation functional obtains the correct state but significantly overestimates the magnetism. The electronic structure of the SDW-AFM state is not very sensitive to structure optimizations with the PBE exchange-correlation functional because the position of the As atoms are preserved under optimizations. We further investigated the Ba atom diffusion process on the BaFe$_2$As$_2$ surface using the nudged elastic bands (NEB) method. The Ba atom was found to be stable above the center of the squares formed by the surface As atoms, and a diffusion barrier of 1.2 eV was found. Our simulated STM image suggests an ordered surface Ba atom structure, in agreement with Ref.

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preprint2010arXiv

Interedge magnetic coupling in transition-metal terminated graphene nanoribbons

The magnetic structures and interedge magnetic couplings of Fe, Co and Ni transition-metal terminated graphene nanoribbons with zigzag (ZGNR) and armchair (AGNR) edges are studied by first-principles calculations. Fe-ZGNR is found to show antiferromagnetic (AF) coupling between two edges, while the interedge coupling of Co-ZGNR is ferromagnetic (FM). For Fe-AGNRs and Co-AGNRs, increasing the interedge distance we follow oscillatory transitions from FM to AF coupling with a period of about 3.7 Å. The damped oscillatory behavior indicates a Ruderman-Kittel-Kasuya-Yosida type interedge magnetic coupling and the oscillation period is determined by the critical spanning vector which connects two inequivalent Dirac points in the graphene Brillouin zone. The two edges in Ni-ZGNR are decoupled independent of the ribbon width and Ni-AGNRs are found to be nonmangetic.

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preprint2010arXiv

Metal-terminated Graphene Nanoribbons

We have investigated structure, electronic, and magnetic properties of metal-terminated zigzag graphene nanoribbons (M-ZGNRs) by first-principles calculations. Two families of metal terminations are studied: (1) 3d-transition metals (TMs) Fe, Co, and Ni and (2) noble metals (NMs) Cu, Ag, and Au. All systems have spin-polarized edge states with antiferromagnetic (AFM) ordering between two edges, except Co-ZGNRs and Ni-ZGNRs which exhibit negligibly small energy differences between AFM and ferromagnetic states with the given ribbon width. In the AFM state the TM terminations transform semiconducting ZGNRs into metallic ones while the band gap remains in ZGNR with NM terminations. Ferromagnetic states of M-ZGNRs with TM terminations show a high degree of spin polarization at the Fermi energy. We predict a large magnetoresistance in Fe-ZGNR junctions with a low, uniform magnetic switching field.

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