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Iek-Heng Chu

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Published work

7 published item(s)

preprint2022arXiv

Transformer-Based Multi-Aspect Multi-Granularity Non-Native English Speaker Pronunciation Assessment

Automatic pronunciation assessment is an important technology to help self-directed language learners. While pronunciation quality has multiple aspects including accuracy, fluency, completeness, and prosody, previous efforts typically only model one aspect (e.g., accuracy) at one granularity (e.g., at the phoneme-level). In this work, we explore modeling multi-aspect pronunciation assessment at multiple granularities. Specifically, we train a Goodness Of Pronunciation feature-based Transformer (GOPT) with multi-task learning. Experiments show that GOPT achieves the best results on speechocean762 with a public automatic speech recognition (ASR) acoustic model trained on Librispeech.

preprint2016arXiv

All-electron self-consistent GW in the Matsubara-time domain: implementation and benchmarks of semiconductors and insulators

The GW approximation is a well-known method to improve electronic structure predictions calculated within density functional theory. In this work, we have implemented a computationally efficient GW approach that calculates central properties within the Matsubara-time domain using the modified version of Elk, the full-potential linearized augmented plane wave (FP-LAPW) package. Continuous-pole expansion (CPE), a recently proposed analytic continuation method, has been incorporated and compared to the widely used Pade approximation. Full crystal symmetry has been employed for computational speedup. We have applied our approach to 18 well-studied semiconductors/insulators that cover a wide range of band gaps computed at the levels of single-shot G0W0, partially self-consistent GW0, and fully self-consistent GW (scGW). Our calculations show that G0W0 leads to band gaps that agree well with experiment for the case of simple s-p electron systems, whereas scGW is required for improving the band gaps in 3-d electron systems. In addition, GW0 almost always predicts larger band gap values compared to scGW, likely due to the substantial underestimation of screening effects. Both the CPE method and Pade approximation lead to similar band gaps for most systems except strontium titantate, suggesting further investigation into the latter approximation is necessary for strongly correlated systems. Our computed band gaps serve as important benchmarks for the accuracy of the Matsubara-time GW approach.

preprint2015arXiv

Electron transport in graphene/graphene side-contact junction by plane-wave multiple scattering method

Electron transport in graphene is along the sheet but junction devices are often made by stacking different sheets together in a "side-contact" geometry which causes the current to flow perpendicular to the sheets within the device. Such geometry presents a challenge to first-principles transport methods. We solve this problem by implementing a plane-wave based multiple scattering theory for electron transport. This implementation improves the computational efficiency over the existing plane-wave transport code, scales better for parallelization over large number of nodes, and does not require the current direction to be along a lattice axis. As a first application, we calculate the tunneling current through a side-contact graphene junction formed by two separate graphene sheets with the edges overlapping each other. We find that transport properties of this junction depend strongly on the AA or AB stacking within the overlapping region as well as the vacuum gap between two graphene sheets. Such transport behaviors are explained in terms of carbon orbital orientation, hybridization, and delocalization as the geometry is varied.

preprint2015arXiv

Preventing rapid energy loss from electron-hole pairs to phonons in graphene quantum dots

In semiconductors, photoexcited electrons and holes (carriers) initially occupy high-energy states, but quickly lose energy to phonons and relax to the band edge within a picosecond [1]. Increasing the lifetime of carriers in light-absorbing materials is necessary to improve open-circuit voltage in photovoltaics [2], charge separation in organic solar cells [3], and charge transfer in photodetection de vices [4]. Here we demonstrate long lifetimes over one hundred picoseconds for electron-hole pairs in graphene quantum dots (GQDs) due to large transition energies and weak coupling to excitonic states below the fundamental band gap. This possibility for a large transition energy to bound excitons is due to graphene's poor screening, illustrating a unique mechanism in this QD to occupy higher-energy states for long timescales. GQD edges can be terminated with either armchair or zigzag carbon patterns, and this edge structure changes excited state lifetimes by orders of magnitude. These results indicate nanoscale control of carrier lifetimes in optoelectronics.

preprint2014arXiv

All-Electron GW Quasiparticle Band Structures of Group 14 Nitride Compounds

We have investigated the group 14 nitrides (M$_3$N$_4$) in the spinel phase ($γ$-M$_3$N$_4$ with M= C, Si, Ge and Sn) and $β$ phase ($β$-M$_3$N$_4$ with M= Si, Ge and Sn) using density functional theory with the local density approximation and the GW approximation. The Kohn-Sham energies of these systems have been first calculated within the framework of full-potential linearized augmented plane waves and then corrected using single-shot G$_0$W$_0$ calculations, which we have implemented in the modified version of the Elk full-potential LAPW code. Direct band gaps at the $Γ$ point have been found for spinel-type nitrides $γ$-M$_3$N$_4$ with M= Si, Ge and Sn. The corresponding GW-corrected band gaps agree with experiment. We have also found that the GW calculations with and without the plasmon-pole approximation give very similar results, even when the system contains semi-core $d$ electrons. These spinel-type nitrides are novel materials for potential optoelectronic applications because of their direct and tunable band gaps.

preprint2014arXiv

Using Light-Switching Molecules to Modulate Charge Mobility in a Quantum Dot Array

We have studied the electron hopping in a two-CdSe quantum dot system linked by an azobenzene-derived light-switching molecule. This system can be considered as a prototype of a QD supercrystal. Following the computational strategies given in our recent work [Chu et al. J. Phys. Chem. C 115, 21409 (2011)], we have investigated the effects of molecular attachment, molecular isomer (trans and cis) and QD size on electron hopping rate using Marcus theory. Our results indicate that molecular attachment has a large impact on the system for both isomers. In the most energetically favorable attachment, the cis isomer provides significantly greater coupling between the two QDs and hence the electron hopping rate is greater compared to the trans isomer. As a result, the carrier mobility of the QD array in the low carrier density, weak external electric field regime is several orders of magnitude higher in the cis compared to the trans configuration. This is the first demonstration of mobility modulation using QDs and azobenzene that could lead to a new type of switching device.

preprint2013arXiv

First-Principles Studies of Photoinduced Charge Transfer in Noncovalently Functionalized Carbon Nanotubes

We have studied the energetics, electronic structure, optical excitation, and electron relaxation of dinitromethane molecules (CH$_{2}$N$_{2}$O$_{4}$) adsorbed on semiconducting carbon nanotubes (CNTs) of chiral index (n,0) (n=7, 10, 13, 16, 19). Using first-principles density functional theory (DFT) with generalized gradient approximations and van der Waals corrections, we have calculated adsorption energies of dinitropentylpyrene, in which the dinitromethane is linked to the pyrene via an aliphatic chain, on a CNT. A 75.26 kJ/mol binding energy has been found, which explains why such aliphatic chain-pyrene units can be and have been used in experiments to bind functional molecules to CNTs. The calculated electronic structures show that the dinitromethane introduces a localized state inside the band gap of CNT systems of n=10, 13, 16 and 19; such a state can trap an electron when the CNT is photoexcited. We have therefore investigated the dynamics of intra-band relaxations using the reduced density matrix formalism in conjunction with DFT. For pristine CNTs, we have found that the calculated charge relaxation constants agree well with the experimental time scales. Upon adsorption, these constants are modified, but there is not a clear trend for the direction and magnitude of the change. Nevertheless, our calculations predict that electron relaxation in the conduction band is faster than hole relaxation in the valence band for CNTs with and without molecular adsorbates.