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Lin-Wang Wang

Lin-Wang Wang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-phcond-mat.dis-nncond-mat.otherphysics.chem-ph

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Published work

16 published item(s)

preprint2021arXiv

Dynamic short-range correlation in photoinduced disorder phase transitions

Ultrafast photoexcitation can induce a nonequilibrium dynamic with electron-lattice interaction, offering an effective way to study photoinduced phase transitions (PIPTs) in solids. The issue that atomic displacements after photoexcitation belong to coherent change or disordered process, has become a controversy in the PIPT community. Using real-time time-dependent density functional theory (rt-TDDFT) simulations, we obtain both the coherent and the disordered PIPTs (dimer dissociation) in IrTe2 with the different electronic occupations. More importantly, we found that in the disordered phase transition, there exists a local correlation between different dimers regarding their dissociation status. One can define vertical groups across the layers. The dimers in the same group will dissociate in a correlated fashion: they either all dissociate, or all not dissociate. On the other hand, the dimers in neighboring groups will have an anti-correlation: if the dimers in one group dissociate, the dimers in the neighboring group tend not to be dissociated, and vice versus.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The seeds and homogeneous nucleation of photoinduced nonthermal melting in semiconductors due to self-amplified local dynamic instability

Laser-induced nonthermal melting in semiconductors has been studied over the last four decades, but the underlying mechanism is still under debate. Here, by utilizing an advanced real-time time-dependent density functional theory simulation, we reveal that the photoexcitation-induced ultrafast nonthermal melting in silicon occurs via homogeneous nucleation with random seeds originating from a self-amplified local dynamic instability at the photoexcited states rather than by simultaneously breaking of all bonds, as suggested by the inertial model, phonon instability, or Coulombic repulsion mechanisms. Due to this local dynamic instability, any initial small random thermal displacements of atoms can be amplified by a charge transfer of photoexcited carriers, which in turn creates a local self-trapping center for the excited carriers and yields the random nucleation seeds. This finding provides fresh insights into photoinduced ultrafast nonthermal melting.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Uniting the order and disorder dynamics in photoexcited VO2

Photoinduced phase transition (PIPT) is always treated as a coherent process, but ultrafast disordering in PIPT is observed in recent experiments. Utilizing the real-time time-dependent density functional theory (rt-TDDFT) method, here, we track the motion of individual vanadium (V) ions during PIPT in VO2 and uncover that their coherent or disordered dynamics can be manipulated by tuning the laser fluence. We find that the photoexcited holes generate a force on each V-V dimer to drive their collective coherent motion, in competing with the thermal-induced vibrations. If the laser fluence is so weak that the photoexcited hole density is too low to drive the phase transition alone, the PIPT is a disordered process due to the interference of thermal phonons. We also reveal that the photoexcited holes populated by the V-V dimerized bonding states will become saturated if the laser fluence is too strong, limiting the timescale of photoinduced phase transition.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Anharmonic corrections to the multiphonon deep-level charge capture ab initio calculations for semiconductors

Nonradiative carrier recombination at semiconductor deep centers is of great importance to both fundamental physics and device engineering. In this letter, we provide a revised analysis of K. Huang's original nonradiative multi-phonon (NMP) theory with ab initio calculations. First, we identify at first-principle level that Huang's concise formula gives the same results as the matrix based formula, and Huang's high temperature formula provides an analytical expression for the coupling constant in Marcus theory. Secondly, the anharmonic effects are corrected by taking into account local phonon mode variation at different charge states of the defect. The corrected capture rates for defects in GaN and SiC agree well with experiments.

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preprint2019arXiv

Observation of Rydberg exciton polaritons and their condensate in a perovskite cavity

The condensation of half-light half-matter exciton polaritons in semiconductor optical cavities is a striking example of macroscopic quantum coherence in a solid state platform. Quantum coherence is possible only when there are strong interactions between the exciton polaritons provided by their excitonic constituents. Rydberg excitons with high principle value exhibit strong dipole-dipole interactions in cold atoms. However, polaritons with the excitonic constituent that is an excited state, namely Rydberg exciton polaritons (REPs), have not yet been experimentally observed. Here, for the first time, we observe the formation of REPs in a single crystal CsPbBr3 perovskite cavity without any external fields. These polaritons exhibit strong nonlinear behavior that leads to a coherent polariton condensate with a prominent blue shift. Furthermore, the REPs in CsPbBr3 are highly anisotropic and have a large extinction ratio, arising from the perovskite's orthorhombic crystal structure. Our observation not only sheds light on the importance of many-body physics in coherent polariton systems involving higher-order excited states, but also paves the way for exploring these coherent interactions for solid state quantum optical information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A comparative study of ab initio nonradiative recombination rate calculations under different formalisms

Nonradiative carrier recombination is of both great applied and fundamental importance.But the correct ab initio approaches to calculate it remains to be inconclusive. Here we used 5 different formalisms to calculate the nonradiative carrier recombinations of two complex defect structures GaP:Zn_Ga-O_P and GaN:Zn_Ga-V_N, and compared the results with experiments.In order to apply different multiphonon assisted electron transition formalisms, we have calculated the electron-phonon coupling constants by ab initio density functional theory for all phonon modes. Compared with different methods, the capture coefficients calculated by the static coupling theory are 4.30*10^-8 and 1.46*10^-7 cm^3/s for GaP:Zn_Ga-O_P and GaN:Zn_Ga-V_N, which are in good agreement with the experiment results, 4*10^-8 and 3.0*10^-7 cm^3/s respectively. We also provided arguments for why the static coupling theory should be used to calculate the nonradiative decays of semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Band gap corrections for molecules and solids using Koopmans theorem and Wannier functions

We have proposed a method for correcting the Kohn-Sham eigen energies in the density functional theory (DFT) based on the Koopmans theorem using Wannier functions. The method provides a general approach applicable for molecules and solids for electronic structure calculations. It does not have any adjustable parameters and the computational cost is at the DFT level. For solids, the calculated eigen energies agree well with the experiments for not only the band gaps, but also the energies of other valence and conduction bands. For molecules, the calculated eigen energies agree well with the experimental ionization potentials and electron affinities, and show better trends than the traditional Delta-self-consistent-field (?SCF) results.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Using Light-Switching Molecules to Modulate Charge Mobility in a Quantum Dot Array

We have studied the electron hopping in a two-CdSe quantum dot system linked by an azobenzene-derived light-switching molecule. This system can be considered as a prototype of a QD supercrystal. Following the computational strategies given in our recent work [Chu et al. J. Phys. Chem. C 115, 21409 (2011)], we have investigated the effects of molecular attachment, molecular isomer (trans and cis) and QD size on electron hopping rate using Marcus theory. Our results indicate that molecular attachment has a large impact on the system for both isomers. In the most energetically favorable attachment, the cis isomer provides significantly greater coupling between the two QDs and hence the electron hopping rate is greater compared to the trans isomer. As a result, the carrier mobility of the QD array in the low carrier density, weak external electric field regime is several orders of magnitude higher in the cis compared to the trans configuration. This is the first demonstration of mobility modulation using QDs and azobenzene that could lead to a new type of switching device.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Non-adiabatic molecular dynamics simulation for carrier transport in a molecular monolayer

We present a new approach to carry out non-adiabatic molecular dynamics to study the carrier mobility in an organic monolayer. This approach allows the calculation of a 4802 atom system for 825 fs in about three hours using 51,744 computer cores while maintaining a plane wave pseudopotential density functional theory level accuracy for the Hamiltonian. Our simulation on a pentathiophene butyric acid monolayer reveals a previously unknown new mechanism for the carrier transport in such systems: the hole wave functions are localized by thermo fluctuation induced disorder, while its transport is via charge transfer during state energy crossing. The simulation also shows that the system is not in thermo dynamic equilibrium in terms of adiabatic state populations according to Boltzmann distribution. Our simulation is achieved by introducing a linear time dependence approximation of the Hamiltonian within a fs time interval, and by using the charge patching method to yield the Hamiltonian, and overlapping fragment method to diagonalize the Hamiltonian matrix.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Thermodynamic Oxidation and Reduction Potentials of Photocatalytic Semiconductors in Aqueous Solution

We introduce an approach to calculate the thermodynamic oxidation and reduction potentials of semiconductors in aqueous solution. By combining a newly-developed ab initio calculation for compound formation energy and band alignment with electrochemistry experimental data, this approach can be used to predict the stability of almost any compound semiconductor in aqueous solution. 30 photocatalytic semiconductors have been studied, and a graph (a simplified Pourbaix diagram) showing their valence/conduction band levels and oxidation/reduction potentials is produced. Based on this graph, we have studied the stabilities and trends against the oxidative and reductive photocorrosion for compound semiconductors. We found that, only metal oxides can be thermodynamically stable when used as the n-type photoanodes. All the non-oxides are unstable due to easy oxidation by the photogenerated holes, but they can be resistant to the reduction by electrons, thus stable as the p-type photocathodes.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Intrinsic Defects and Electronic Conductivity of TaON: First-Principles Insights

As a compound in between the tantalum oxide and nitride, the tantalum oxynitride TaON is expected to combine their advantages and act as an efficient visible-light-driven photocatalyst. In this letter, using hybrid functional calculations we show that TaON has different defect properties from the binary tantalum oxide and nitride: (i) instead of O or N vacancies or Ta interstitials, the $O_N$ antisite is the dominant defect, which determines its intrinsic n-type conductivity and the p-type doping difficulty; (ii) the $O_N$ antisite has a shallower donor level than O or N vacancies, with a delocalized distribution composed mainly of the Ta $5d$ orbitals, which gives rise to better electronic conductivity in the oxynitride than in the oxide and nitride. The phase stability analysis reveals that the easy oxidation of TaON is inevitable under O rich conditions, and a relatively O poor condition is required to synthesize stoichiometric TaON samples.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Overlapping fragments method for electronic structure calculation of large systems

We present a method for the calculation of electronic structure of systems that contain tens of thousands of atoms. The method is based on the division of the system into mutually overlapping fragments and the representation of the single-particle Hamiltonian in the basis of eigenstates of these fragments. In practice, for the range of system size that we studied (up to tens of thousands of atoms), {the dominant part of the calculation scales} linearly with the size of the system when all the states within a fixed energy interval are required. The method is highly suitable for making good use of parallel computing architectures. We illustrate the method by applying it to diagonalize the single-particle Hamiltonian obtained using the density functional theory based charge patching method in the case of amorphous alkane and polythiophene polymers.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Carrier hopping in disordered semiconducting polymers: How accurate is the Miller-Abrahams model?

We performed direct calculations of carrier hopping rates in strongly disordered conjugated polymers based on the atomic structure of the system, the corresponding electronic states and their coupling to all phonon modes. We found that the dependence of hopping rates on distance and the dependence of the mobility on temperature are significantly different than the ones stemming from the simple Miller-Abrahams model, regardless of the choice of the parameters in the model. A new model that satisfactorily describes the hopping rates in the system and avoids the explicit calculation of electron-phonon coupling constants was then proposed and verified. Our results indicate that, in addition to electronic density of states, the phonon density of states and the spatial overlap of the wavefunctions are the quantities necessary to properly describe carrier hopping in disordered conjugated polymers.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Quantum Mechanical Simulation of Electronic Transport in Nanostructured Devices by Efficient Self-consistent Pseudopotential Calculation

We present a new empirical pseudopotential (EPM) calculation approach to simulate the million atom nanostructured semiconductor devices under potential bias using the periodic boundary conditions. To treat the non-equilibrium condition, instead of directly calculating the scattering states from the source and drain, we calculate the stationary states by the linear combination of bulk band method and then decompose the stationary wave function into source and drain injecting scattering states according to an approximated top of the barrier splitting (TBS) scheme based on physical insight of ballistic and tunneling transport. The decomposed electronic scattering states are then occupied according to the source/drain Fermi-Levels to yield the occupied electron density which is then used to solve the potential, forming a self-consistent loop. The TBS is tested in an one-dimensional effective mass model by comparing with the direct scattering state calculation results. It is also tested in a three-dimensional 22 nm double gate ultra-thin-body field-effect transistor study, by comparing the TBS-EPM result with the non-equilibrium Green's function tight-binding result. We expected the TBS scheme will work whenever the potential in the barrier region is smoother than the wave function oscillations and if it does not have local minimum, thus there is no multiple scattering as in a resonant tunneling diode, and when a three-dimensional problem can be represented as a quasi-one-dimensional problem, e.g., in a variable separation approximation. Using our approach, a million atom non-equilibrium nanostructure device can be simulated with EPM on a single processor computer.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Localized Electron States Near a Metal-Semiconductor Nanocontact

The electronic structure of nanowires in contact with metallic electrodes of experimentally relevant sizes is calculated by incorporating the electrostatic polarization potential into the atomistic single particle Schrödinger equation. We show that the presence of an electrode produces localized electron/hole states near the electrode, a phenomenon only exhibited in nanostructures and overlooked in the past. This phenomenon will have profound implications on electron transport in such nanosystems. We calculate several electrode/nanowire geometries, with varying contact depths and nanowire radii. We demonstrate the change in the band gap of up to 0.5 eV in 3 nm diameter CdSe nanowires and calculate the magnitude of the applied electric field necessary to overcome the localization.

0 citations0 reviewsNo code linkedOpen access
preprint1997arXiv

Predicion of charge separation in GaAs/AlAs cylindrical Russian Doll nanostructures

We have contrasted the quantum confinement of (i) multiple quantum wells of flat GaAs and AlAs layers, i.e. $(\GaAs)_{m}/(\AlAs)_n/(\GaAs)_p/(\AlAs)_q$, with (ii) ``cylindrical Russian Dolls'' -- an equivalent sequence of wells and barriers arranged as concentric wires. Using a pseudopotential plane-wave calculation, we identified theoretically a set of numbers ($m,n,p$ and $q$) such that charge separation can exist in ``cylindrical Russian Dolls'': the CBM is localized in the inner GaAs layer, while the VBM is localized in the outer GaAs layer.

0 citations0 reviewsNo code linkedOpen access