BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Jiwei Lu

Jiwei Lu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallphysics.ins-detastro-ph.IM

Catalog footprint

What is connected

16works
5topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

16 published item(s)

preprint2016arXiv

Magneto-transport and domain wall scattering in epitaxy $L1_{0}$ MnAl thin film

This work demonstrated two different kinds of magneto-transport behaviors in epitaxial $L1_{0}$ MnAl film as a function of temperature. The magneto-resistance ratio (MR) was negative and exhibited evident enhancement in the resistivity at coercive fields above 175 K. The MR enhancement was attributed to the increase of the magnetic domain walls based on the quantitative correlation between the domain density and the resistivity. Below 175 K, the MR was positive and showed a quadratic dependence on the external magnetic field, which implied that the MR was dominated by Lorentz effects.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Directed Self-Assembly of Epitaxial CoFe2O4-BiFeO3 Multiferroic Nanocomposites

CoFe${}_{2}$O${}_{4}$ (CFO)-BiFeO${}_{3}$ (BFO) nanocomposites are an intriguing option for future memory and logic technologies due to the magnetoelctric properties of the system. However, these nanocomposites form with CFO pillars randomly located within a BFO matrix, making implementation in devices difficult. To overcome this, we present a technique to produce patterned nanocomposites through self-assembly. CFO islands are patterned on Nb-doped SrTiO${}_{3}$ to direct the self-assembly of epitaxial CFO-BFO nanocomposites, producing square arrays of CFO pillars.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Exchange Bias and Bistable Magneto-Resistance States in Amorphous TbFeCo thin Films

Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy (PMA). Atom probe tomography (APT), scanning transmission electron microscopy (STEM), and energy dispersive spectroscopy (EDS) mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Microstructural Effects of Chemical Island Templating in Patterned Matrix-Pillar Oxide Nanocomposites

The ability to pattern the location of pillars in epitaxial matrix-pillar nanocomposites is a key challenge to develop future technologies using these intriguing materials. One such model system employs a ferrimagnetic CoFe$_{2}$O$_{4}$ (CFO) pillar embedded in a ferroelectric BiFeO$_{3}$ (BFO) matrix, which has been proposed as a possible memory or logic system. These composites self-assemble spontaneously with pillars forming through nucleation at a random location when grown via physical vapor deposition. Recent results have shown that if an island of the pillar material is pre-patterned on the substrate, it is possible to control the nucleation process and determine the locations where pillars form. In this work, we employ electron microscopy and x-ray diffraction to examine the chemical composition and microstructure of patterned CFO-BFO nanocomposites. Cross-sectional transmission electron microscopy is used to examine the nucleation effects at the interface between the template island and resulting pillar.Evidence of grain boundaries and lattice tilting in the templated pillars is also presented and attributed to the microstructure of the seed island.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Phase transition in bulk single crystals and thin films of VO2 by nano-infrared spectroscopy and imaging

We have systematically studied a variety of vanadium dioxide (VO2) crystalline forms, including bulk single crystals and oriented thin films, using infrared (IR) near-field spectroscopic imaging techniques. By measuring the IR spectroscopic responses of electrons and phonons in VO2 with sub-grain-size spatial resolution (~20 nm), we show that epitaxial strain in VO2 thin films not only triggers spontaneous local phase separations but also leads to intermediate electronic and lattice states that are intrinsically different from those found in bulk. Generalized rules of strain and symmetry dependent mesoscopic phase inhomogeneity are also discussed. These results set the stage for a comprehensive understanding of complex energy landscapes that may not be readily determined by macroscopic approaches.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Terahertz Coded Aperture Mask using a Vanadium Dioxide Bowtie Antenna Array

Terahertz imaging systems have received substantial attention from the scientific community for their use in astronomy, spectroscopy, plasma diagnostics and security. One approach to designing such systems is to use focal plane arrays. Although the principle of these systems is straightforward, realizing practical architectures has proven deceptively difficult. A different approach to imaging consists of spatially encoding the incoming flux of electromagnetic energy prior to detection using a reconfigurable mask. This technique is referred to as coded aperture or Hadamard imaging. This paper details the design, fabrication and testing of a prototype coded aperture mask operating at WR 1.5 (500 to 750 GHz) that uses the switching properties of vanadium dioxide (VO2). The reconfigurable mask consists of bowtie antennas with vanadium dioxide VO2 elements at the feed points. From the symmetry, a unit cell of the array can be represented by an equivalent waveguide whose dimensions limit the maximum operating frequency. In this design, the cutoff frequency of the unit cell is 640 GHz. The VO2 devices are grown using reactive-biased target ion beam deposition. A reflection coefficient (S11) measurement of the mask in the WR 1.5 (500 to 750 GHz) band is conducted. The results are compared with circuit models and found to be in good agreement. A simulation of the transmission response of the mask is conducted and shows a transmission modulation of up to 28 dB. This project is a first step towards the development of a full coded aperture imaging system operating at WR 1.5 with VO2 as the mask switching element.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Large epitaxial bi-axial strain induces a Mott-like phase transition in VO2

The metal insulator transition (MIT) in VO2 has been an important topic for recent years. It has been generally agreed that the mechanism of the MIT in bulk VO2 is considered to be a collaborative Mott-Peierls transition, however the effect of the strain on the phase transition is much more complicated. In this study the effect of the large strain on the properties of VO2 films was investigated. One remarkable result is that highly strained epitaxial VO2 thin films were rutile in the insulating state as well as in the metallic state. These highly strained VO2 films underwent an electronic phase transition without the concomitant Peierls transition. Our results also show that a very large tensile strain along the c-axis of rutile VO2 resulted in a phase transition temperature of ~ 433 K, much higher than in any previous report. Our findings elicit that the metal insulator transition in VO2 can be driven by an electronic transition alone, rather the typical coupled electronic-structural transition.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A versatile variable field module for field and angular dependent scanning probe microscopy measurements

We demonstrate a versatile variable field module (VFM) with capability of both field and angular dependent measurements up to 1800 Oe for scanning probe system. The magnetic field strength is changed by adjusting the distance between a rare earth magnet and the probe tip and is monitored in-situ by a built-in Hall sensor. Rotating the magnet allows the field vector to change from the horizontal to vertical direction and makes it possible to do angular dependent measurements. The capability of the VFM system is demonstrated by degaussing a floppy disk media with increasing magnetic field. Angular dependent measurements clearly show the evolution of magnetic domain structures, with a completely reversible magnetic force microscopy phase contrast observed when the magnetic field is rotated by 180°. A further demonstration of out-of-plane and in-plane magnetic switching of CoFe2O4 pillars in CoFe2O4-BiFeO3 nanocomposites was presented and discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Dimensional-Crossover-Driven Mott Insulators in SrVO3 Ultrathin Films

High-quality epitaxial SrVO3 (SVO) thin films of various thicknesses were grown on (001)-oriented LSAT substrates by pulsed electron-beam deposition technique. Thick SVO films (~25 nm) exhibited metallic behavior with the electrical resistivity following the T2 law corresponding to a Fermi liquid system. We observed a temperature driven metal-insulator transition (MIT) in SVO ultrathin films with thicknesses below 6.5 nm, the transition temperature TMIT was found to be at 50 K for the 6.5 nm film, 120 K for the 5.7 nm film and 205 K for the 3 nm film. The emergence of the observed MIT can be attributed to the dimensional crossover from a three-dimensional metal to a two-dimensional Mott insulator, as the resulting reduction in the effective bandwidth W opens a band gap at the Fermi level. The magneto-transport study of the SVO ultrathin films also confirmed the observed MIT is due to the electron-electron interactions other than localization.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Metal-insulator transition induced in SrTi_{1-x}V_xO_3 thin films

Epitaxial SrTi1-xVxO3 thin films with thicknesses of ~16 nm were grown on (001)-oriented LSAT substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for the film with x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic, and the electrical resistivity followed the T^2 law corresponding to a Fermi liquid system. In the insulating region of x < 0.67, the temperature dependence of electrical resistivity for the x = 0.5 and 0.33 films can be scaled with the variable range hopping model. The possible mechanisms behind the observed MIT were discussed, including the effects of electron correlation, lattice distortion and Anderson localization.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Strain-induced enhancement of coercivity in amorphous TbFeCo films

We report a strong size dependence of coercivity in amorphous ferrimagnetic TbFeCo films. The as-deposited film exhibited a low saturation magnetization (Ms=100 emu/cc) and a high perpendicular anisotropy (Ku=10^6 erg/cc). Hall-bar devices were fabricated for characterizing the magneto-transport behaviors. A significant increase in coercivity (up to 300 %) was observed at room temperature as the width of Hall bar was reduced. The large coercivity enhancement was attributed to the relaxation of film stress. The effect of strain and dimensionality on the coercivity in TbFeCo makes it attractive for tunable coercivity and the magnetization reversal in future nanoscale devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Structural and magnetic properties of Cr-diluted CoFeB

The crystallization process and the magnetization of Cr diluted CoFeB was investigated in both ribbon samples and thin film samples with Cr content up to 30 at. %. A primary crystallization of bcc phase from an amorphous precursor in ribbon samples was observed when the annealing temperature rose to between 421 oC and 456 oC, followed by boron segregation at temperatures between 518 oC and 573 oC. The two onset crystallization temperatures showed strong dependences on both Cr and B concentrations. The impact of Cr concentration on the magnetic properties including a reduced saturation magnetization and an enhanced coercive field was also observed. The magnetizations of both ribbon samples and thin film samples were well fitted using the generalized Slater-Pauling curve with modified moments for B (-0.94 μB) and Cr (-3.6 μB). Possible origins of the enhanced coercive field were also discussed. We also achieved a damping parameter in CoFeCrB thin films at the same level as Co40Fe40B20, much lower than the value reported for CoFeCrB films previously. The results suggest a possible advantage of CoFeCrB in reducing the critical switching current density in Spin Transfer Torque Random Access Memory (STT-RAM).

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Structural, magnetic, and nanoscale switching properties of BiFeO3 thin films grown by pulsed electron deposition

We report the epitaxial growth of BiFeO3 by pulsed electron deposition and the resulting crystal quality, magnetic and nanoscale switching properties. X-ray diffraction shows high quality single phase, epitaxial (001) oriented films grown on SrTiO3 (001) substrates. Both field and temperature dependent magnetic properties reveal an antiferromagnetic behavior of the films. For the film with a SrRuO3 bottom electrode, an exchange-enhancement effect between antiferromagnetic BiFeO3 and ferromagnetic SrRuO3 was observed at low temperature. The piezoelectric force microscopy and switching spectroscopy measurements demonstrate the local domain switching process and suggest that the BiFeO3 films are high quality ferroelectrics.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Transport behavior and electronic structure of phase pure VO2 thin films grown on c-plane sapphire under different O2 partial pressure

We grew highly textured phase pure VO2 thin films on c-plane Al2O3 substrates with different oxygen partial pressure. X-ray absorption and photoemission spectroscopy confirm the identical valence state of vanadium ions despite the different oxygen pressure during the deposition. As the O2 flow rate increases, the [010] lattice parameter for monoclinic VO2 was reduced and coincidently distinctive changes in the metal- semiconductor transition (MST) and transport behaviors were observed despite the identical valence state of vanadium in these samples. We discuss the effect of the oxygen partial pressure on the monoclinic structure and electronic structure of VO2, and consequently the MST.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

VO2 nanosheets: controlling the THz properties through strain engineering

We investigate far-infrared properties of strain engineered vanadium dioxide nanosheets through epitaxial growth on a (100)R TiO2 substrate. The nanosheets exhibit large uniaxial strain leading to highly uniform and oriented cracks along the rutile c-axis. Dramatic anisotropy arises for both the metal-insulator transition temperature, which is different from the structural transition temperature along the cR axis, and the metallic state conductivity. Detailed analysis reveals a Mott-Hubbard like behavior along the rutile cR axis.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Detection of bottom ferromagnetic electrode oxidation in magnetic tunnel junctions by magnetometry measurements

Surface oxidation of the bottom ferromagnetic (FM) electrode, one of the major detrimental factors to the performance of a Magnetic Tunnel Junction (MTJ), is difficult to avoid during the fabrication process of the MTJ's tunnel barrier. Since Co rich alloys are commonly used for the FM electrodes in MTJs, over-oxidation of the tunnel barrier results in the formation of a CoO antiferromagnetic (AF) interface layer which couples with the bottom FM electrode to form a typical AF/FM exchange bias (EB) system. In this work, surface oxidation of the CoFe and CoFeB bottom electrodes was detected via magnetometry measurements of exchange-bias characterizations including the EB field, training effect, uncompensated spin density, and coercivity. Variations of these parameters were found to be related to the surface oxidation of the bottom electrode, among them the change of coercivity is most sensitive. Annealed samples show evidence for an oxygen migration back to the MgO tunnel barrier by annealing.

0 citations0 reviewsNo code linkedOpen access