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Stuart A. Wolf

Stuart A. Wolf contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2013arXiv

Dimensional-Crossover-Driven Mott Insulators in SrVO3 Ultrathin Films

High-quality epitaxial SrVO3 (SVO) thin films of various thicknesses were grown on (001)-oriented LSAT substrates by pulsed electron-beam deposition technique. Thick SVO films (~25 nm) exhibited metallic behavior with the electrical resistivity following the T2 law corresponding to a Fermi liquid system. We observed a temperature driven metal-insulator transition (MIT) in SVO ultrathin films with thicknesses below 6.5 nm, the transition temperature TMIT was found to be at 50 K for the 6.5 nm film, 120 K for the 5.7 nm film and 205 K for the 3 nm film. The emergence of the observed MIT can be attributed to the dimensional crossover from a three-dimensional metal to a two-dimensional Mott insulator, as the resulting reduction in the effective bandwidth W opens a band gap at the Fermi level. The magneto-transport study of the SVO ultrathin films also confirmed the observed MIT is due to the electron-electron interactions other than localization.

preprint2011arXiv

Inhomogeneous Superconducting State and intrinsic Tc : Near Room Temperature Superconductivity in the Cuprates

Doped cuprates are inhomogeneous superconductors. The concept of an intrinsic critical temperature, Tcintr.$\equiv$ Tc*, whose value greatly exceeds that for the resistive Tcres.$\equiv$ Tc, is supported by a number of experimental studies, including those performed recently. These data are discussed in this review. The anomalous diamagnetism observed at Tcres.$\equiv$ <T< Tc* is a manifestation of the presence of superconducting clusters embedded into a normal metallic matrix. The value of intrinsic critical temperature in some cuprates reaches a value which is close to room temperature. The a.c. properties of such inhomogeneous systems are discussed.

preprint2011arXiv

Ordering of dopants and potential increase in Tc to near room temperature

This paper describes a novel method to increase the resistive Tc of cuprate superconductors to values that might approach room temperature if the method is applied to the so-called underdoped regime. This involves ordering the dopants that provide the holes as well as provide pair breaking. The strategy is to separate the doped regions with lower Tc from metallic but undoped regions with the higher Tc.

preprint2011arXiv

VO2 nanosheets: controlling the THz properties through strain engineering

We investigate far-infrared properties of strain engineered vanadium dioxide nanosheets through epitaxial growth on a (100)R TiO2 substrate. The nanosheets exhibit large uniaxial strain leading to highly uniform and oriented cracks along the rutile c-axis. Dramatic anisotropy arises for both the metal-insulator transition temperature, which is different from the structural transition temperature along the cR axis, and the metallic state conductivity. Detailed analysis reveals a Mott-Hubbard like behavior along the rutile cR axis.