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Jiuning Hu

Jiuning Hu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

10 published item(s)

preprint2022arXiv

Designs for programmable quantum resistance standards based on epitaxial graphene p-n junctions

We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using external gating.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Large-scale five- and seven-junction epitaxial graphene devices

The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the i=2 plateau. These fractions take the form a/b R_H and can be determined both analytically and by simulations. These experiments validate the use of either the LTspice circuit simulator or the analytical framework recently presented in similar work. Furthermore, the production of several devices with large-scale junctions substantiates the approach of using simple ultraviolet lithography to obtain junctions of sufficient sharpness.

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preprint2022arXiv

Nonconventional Quantized Hall Resistances Obtained with $ν= 2$ Equilibration in Epitaxial Graphene $p-n$ Junctions

We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantized Hall resistance at $ν=2$ ($R_H\approx 12906 Ω$) that take the form: $\frac{a}{b}R_H$. Here, $a$ and $b$ have been observed to take on values such 1, 2, 3, and 5 to form various coefficients of $R_H$. Additionally, we provide a framework for exploring future device configurations using the LTspice circuit simulator as a guide to understand the abundance of available fractions one may be able to measure. These results support the potential for drastically simplifying device processing time and may be used for many other two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator

A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with a gapped insulating bulk yet a conducting surface hosting topologically-protected gapless surface states. One of the most distinct electronic transport signatures predicted for such topological surface states (TSS) is a well-defined half-integer quantum Hall effect (QHE) in a magnetic field, where the surface Hall conductivities become quantized in units of (1/2)e2/h (e being the electron charge, h the Planck constant) concomitant with vanishing resistance. Here, we observe well-developed QHE arising from TSS in an intrinsic TI of BiSbTeSe2. Our samples exhibit surface dominated conduction even close to room temperature, while the bulk conduction is negligible. At low temperatures and high magnetic fields perpendicular to the top and bottom surfaces, we observe well-developed integer quantized Hall plateaus, where the two parallel surfaces each contributing a half integer e2/h quantized Hall (QH) conductance, accompanied by vanishing longitudinal resistance. When the bottom surface is gated to match the top surface in carrier density, only odd integer QH plateaus are observed, representing a half-integer QHE of two degenerate Dirac gases. This system provides an excellent platform to pursue a plethora of exotic physics and novel device applications predicted for TIs, ranging from magnetic monopoles and Majorana particles to dissipationless electronics and fault-tolerant quantum computers.

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preprint2012arXiv

Existence of negative differential thermal conductance in one-dimensional diffusive thermal transport

We show that in a finite one-dimensional (1D) system with diffusive thermal transport described by the Fourier's law, negative differential thermal conductance (NDTC) cannot occur when the temperature at one end is fixed. We demonstrate that NDTC in this case requires the presence of junction(s) with temperature dependent thermal contact resistance (TCR). We derive a necessary and sufficient condition for the existence of NDTC in terms of the properties of the TCR for systems with a single junction. We show that under certain circumstances we even could have infinite (negative or positive) differential thermal conductance in the presence of the TCR. Our predictions provide theoretical basis for constructing NDTC-based devices, such as thermal amplifiers, oscillators and logic devices.

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preprint2012arXiv

Observation of Quantized Hall Effect and Shubnikov-de Hass Oscillations in Highly Doped Bi2Se3: Evidence for Layered Transport of Bulk Carriers

Bi2Se3 is an important semiconductor thermoelectric material and a prototype topological insulator. Here we report observation of Shubnikov-de Hass (SdH) oscillations accompanied by quantized Hall resistances (Rxy) in highly-doped n-type Bi2Se3 with bulk carrier concentrations of few 10^19 cm^-3. Measurements under tilted magnetic fields show that the magnetotransport is 2D-like, where only the c-axis component of the magnetic field controls the Landau level formation. The quantized step size in 1/Rxy is found to scale with the sample thickness, and average ~e2/h per quintuple layer (QL). We show that the observed magnetotransport features do not come from the sample surface, but arise from the bulk of the sample acting as many parallel 2D electron systems to give a multilayered quantum Hall effect. Besides revealing a new electronic property of Bi2Se3, our finding also has important implications for electronic transport studies of topological insulator materials.

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preprint2012arXiv

Tunable Thermal Transport and Thermal Rectification in Strained Graphene Nanoribbons

Using molecular dynamics(MD) simulations, we study thermal transport in graphene nanoribbons (GNR) subjected to uniform uniaxial and nonuniform strain fields. We predict significant thermal rectification (over 70%) in a rectangular armchair GNR by applying a transverse force asymmetrically. The heat flux is larger from the less stressed region to the more stressed region. Furthermore, we develop a theoretical framework based on the non-equilibrium thermodynamics to discuss when thermal rectification under a stress gradient can occur. We conclude with a discussion of details relevant to experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Nonlinear thermal transport and negative differential thermal conductance in graphene nanoribbons

We employ classical molecular dynamics to study the nonlinear thermal transport in graphene nanoribbons (GNRs). For GNRs under large temperature biases beyond linear response regime, we have observed the onset of negative differential thermal conductance (NDTC). NDTC is tunable by varying the manner of applying the temperature biases. NDTC is reduced and eventually disappears when the length of the GNR increases. We have also observed NDTC in triangular GNRs, where NDTC exists only when the heat current is from the narrower to the wider end. These effects may be useful in nanoscale thermal managements and thermal signal processing utilizing GNRs.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Thermal Conductivity and Thermal Rectification in Graphene Nanoribbons: a Molecular Dynamics Study

We have used molecular dynamics to calculate the thermal conductivity of symmetric and asymmetric graphene nanoribbons (GNRs) of several nanometers in size (up to ~4 nm wide and ~10 nm long). For symmetric nanoribbons, the calculated thermal conductivity (e.g. ~2000 W/m-K @400K for a 1.5 nm {\times} 5.7 nm zigzag GNR) is on the similar order of magnitude of the experimentally measured value for graphene. We have investigated the effects of edge chirality and found that nanoribbons with zigzag edges have appreciably larger thermal conductivity than nanoribbons with armchair edges. For asymmetric nanoribbons, we have found significant thermal rectification. Among various triangularly-shaped GNRs we investigated, the GNR with armchair bottom edge and a vertex angle of 30° gives the maximal thermal rectification. We also studied the effect of defects and found that vacancies and edge roughness in the nanoribbons can significantly decrease the thermal conductivity. However, substantial thermal rectification is observed even in the presence of edge roughness.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Tuning the thermal conductivity of graphene nanoribbons by edge passivation and isotope engineering: a molecular dynamics study

Using classical molecular dynamics simulation, we have studied the effect of edge-passivation by hydrogen (H-passivation) and isotope mixture (with random or supperlattice distributions) on the thermal conductivity of rectangular graphene nanoribbons (GNRs) (of several nanometers in size). We found that the thermal conductivity is considerably reduced by the edge H-passivation. We also find that the isotope mixing can reduce the thermal conductivities, with the supperlattice distribution giving rise to more reduction than the random distribution. These results can be useful in nanoscale engineering of thermal transport and heat management using GNRs.

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