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Yong P. Chen

Yong P. Chen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.quant-gasphysics.atom-phquant-phphysics.chem-phcond-mat.str-elphysics.opticscond-mat.supr-conphysics.app-phphysics.comp-phphysics.data-an

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Published work

59 published item(s)

preprint2026arXiv

Landau Zener Interaction Enhanced Quantum Sensing in Spin Defects of Hexagonal Boron Nitride

Negatively charged boron vacancies (V$_{\text{B}}^{-}$) in hexagonal boron nitride (hBN) comprise a promising quantum sensing platform, optically addressable at room temperature and transferrable onto samples. However, broad hyperfine-split spin transitions of the ensemble pose challenges for quantum sensing with conventional resonant excitation due to limited spectral coverage. While isotopically enriched hBN using $^{10}$B and $^{15}$N isotopes (h$^{10}$B$^{15}$N) exhibits sharper spectral features, significant inhomogeneous broadening persists. We demonstrate that, implemented via frequency modulation on an FPGA, a frequency-ramped microwave pulse achieves around 4-fold greater $|0\rangle\rightarrow|-1\rangle$ spin-state population transfer and thus contrast than resonant microwave excitation and thus 16-fold shorter measurement time for spin relaxation based quantum sensing. Quantum dynamics simulations reveal that an effective two-state Landau-Zener model captures the complex relationship between population inversion and pulse length with relaxations incorporated. Our approach is robust and valuable for quantum relaxometry with spin defects in hBN in noisy environments.

0 citations0 reviewsNo code linkedOpen access
preprint2024arXiv

Advancing Noise-Resilient Twist Angle Characterization in Bilayer Graphene through Raman Spectroscopy via GAN-CNN Modeling

In this study, we introduce an innovative methodology for robust twist angle identification in bilayer graphene using Raman spectroscopy, featuring the integration of generative adversarial network and convolutional neural network (GAN-CNN). Our proposed approach showcases remarkable resistance to noise interference, particularly in ultra-low Signal-to-Noise Ratio (SNR) conditions. We demonstrate the GAN-CNN model's robust learning capability, even when SNR reaches minimal levels. The model's exceptional noise resilience negates the necessity for preprocessing steps, facilitating accurate classification, and substantially reducing computational expenses. Empirical results reveal the model's prowess, achieving heightened accuracy in twist angle identification. Specifically, our GAN-CNN model achieves a test accuracy exceeding 99.9% and a recall accuracy of 99.9%, relying on an augmented dataset containing 4209 spectra. This work not only contributes to the evolution of noise-resistant spectral analysis methodologies but also provides crucial insights into the application of advanced deep learning techniques for bilayer graphene characterization through Raman spectroscopy. The findings presented herein have broader implications for enhancing the precision and efficiency of material characterization methodologies, laying the foundation for future advancements in the field.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Bose-Einstein Condensate on a Synthetic Topological Hall Cylinder

The interplay between matter particles and gauge fields in physical spaces with nontrivial geometries can lead to novel topological quantum matter. However, detailed microscopic mechanisms are often obscure, and unconventional spaces are generally challenging to construct in solids. Highly controllable atomic systems can quantum simulate such physics, even those inaccessible in other platforms. Here, we realize a Bose-Einstein condensate (BEC) on a synthetic cylindrical surface subject to a net radial synthetic magnetic flux. We observe a symmetry-protected topological band structure emerging on this Hall cylinder but disappearing in the planar counterpart. BEC's transport observed as Bloch oscillations in the band structure is analogous to traveling on a Möbius strip in the momentum space, revealing topological band crossings protected by a nonsymmorphic symmetry. We demonstrate that breaking this symmetry induces a topological transition manifested as gap opening at band crossings, and further manipulate the band structure and BEC's transport by controlling the axial synthetic magnetic flux. Our work opens the door for using atomic quantum simulators to explore intriguing topological phenomena intrinsic in unconventional spaces.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Nuclear spin polarization and control in a van der Waals material

Van der Waals layered materials are a focus of materials research as they support strong quantum effects and can easily form heterostructures. Electron spins in van der Waals materials played crucial roles in many recent breakthroughs, including topological insulators, two-dimensional (2D) magnets, and spin liquids. However, nuclear spins in van der Waals materials remain an unexplored quantum resource. Here we report the first demonstration of optical polarization and coherent control of nuclear spins in a van der Waals material at room temperature. We use negatively-charged boron vacancy ($V_B^-$) spin defects in hexagonal boron nitride to polarize nearby nitrogen nuclear spins. Remarkably, we observe the Rabi frequency of nuclear spins at the excited-state level anti-crossing of $V_B^-$ defects to be 350 times larger than that of an isolated nucleus, and demonstrate fast coherent control of nuclear spins. We also detect strong electron-mediated nuclear-nuclear spin coupling that is 5 orders of magnitude larger than the direct nuclear spin dipolar coupling, enabling multi-qubit operations. Nitrogen nuclear spins in a triangle lattice will be suitable for large-scale quantum simulation. Our work opens a new frontier with nuclear spins in van der Waals materials for quantum information science and technology.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate field effects on the topological insulator BiSbTeSe2 interface

Interfaces between two topological insulators are of fundamental interest in condensed matter physics. Inspired by experimental efforts, we study interfacial processes between two slabs of BiSbTeSe2 (BSTS) via first principles calculations. Topological surface states are absent for the BSTS interface at its equilibrium separation, but our calculations show that they appear if the inter-slab distance is greater than 6 Ang. More importantly, we find that topological interface states can be preserved by inserting two or more layers of hexagonal boron nitride between the two BSTS slabs. In experiments, the electric current tunneling through the interface is insensitive to back gate voltage when the bias voltage is small. Using a first-principles based method that allows us to simulate gate field, we show that at low bias the extra charge induced by a gate voltage resides on the surface that is closest to the gate electrode, leaving the interface almost undoped. This provides clues to understand the origin of the observed insensitivity of transport properties to back voltage at low bias. Our study resolves a few questions raised in experiment, which does not yet offer a clear correlation between microscopic physics and transport data. We provide a road map for the design of vertical tunneling junctions involving the interface between two topological insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Opposite current-induced spin polarizations in bulk-metallic Bi2Se3 and bulk-insulating Bi2Te2Se topological insulator thin flakes

One of the most fundamental and exotic properties of 3D topological insulators (TIs) is spin-momentum-locking (SML) of their topological surface states (TSSs), promising for potential applications in future spintronics. However, other possible conduction channels, such as a trivial two-dimensional electron gas (2DEG) with strong Rashba type spin-orbit interaction (SOI) and bulk conducting states that may possess a spin Hall effect (SHE), can coexist in 3D TIs, making determining the origin of the current induced spin polarization (CISP) difficult. In this work, we directly compared the CISP between bulk-insulating Bi2Te2Se (BTS221) and bulk-metallic Bi2Se3 thin flakes using spin potentiometry. In the bulk insulating BTS221, the observed CISP has a sign consistent with the expected helicity of the SML of the TSS, but an opposite sign to its calculated bulk spin Hall conductivity (SHC). However, compared to BTS221, an opposite CISP is observed in the bulk metallic Bi2Se3, consistent instead with both the expectations of its Rashba-Edelstein effect of the band-bending induced 2DEG and bulk spin Hall Effect (SHE). Our results provide an electrical way to distinguish the TSS from other possible conducting channels in spin transport measurements on 3D TIs, and open ways for the potential applications in charge-spin conversion devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Highly skewed current-phase relation in superconductor-topological insulator-superconductor Josephson junctions

Three-dimensional topological insulators (TI's) in proximity with superconductors are expected to exhibit exotic phenomena such as topological superconductivity (TSC) and Majorana bound states (MBS), which may have applications in topological quantum computation. In superconductor-TI-superconductor Josephson junctions, the supercurrent versus the phase difference between the superconductors, referred to as the current-phase relation (CPR), reveals important information including the nature of the superconducting transport. Here, we study the induced superconductivity in gate-tunable Josephson junctions (JJs) made from topological insulator BiSbTeSe2 with superconducting Nb electrodes. We observe highly skewed (non-sinusoidal) CPR in these junctions. The critical current, or the magnitude of the CPR, increases with decreasing temperature down to the lowest accessible temperature (T ~ 20 mK), revealing the existence of low-energy modes in our junctions. The gate dependence shows that close to the Dirac point the CPR becomes less skewed, indicating the transport is more diffusive, most likely due to the presence of electron/hole puddles and charge inhomogeneity. Our experiments provide strong evidence that superconductivity is induced in the highly ballistic topological surface states (TSS) in our gate-tunable TI- based JJs. Furthermore, the measured CPR is in good agreement with the prediction of a model which calculates the phase dependent eigenstate energies in our system, considering the finite width of the electrodes as well as the TSS wave functions extending over the entire circumference of the TI.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electrical spin injection into graphene from a topological insulator in a van der Waals heterostructure

All-electrical (magnetic-material-free) spin injection is one of the outstanding goals in spintronics. Topological insulators (TIs) have been recognized as a promising electrically controlled spin source thanks to the strong spin-orbit coupling and in particular, the spin-momentum locked topological surface states (TSS) supporting helically spin polarized currents. Many TI materials such as Bi-based chalcogenides are also layered 2D materials and can be incorporated into van der Waals (vdW) coupled heterostructures, opening the possibility of the utilization of TIs for electrical spin injection into other 2D materials. Here, we demonstrate electrical injection of helically spin-polarized current into graphene through a 3D TI in a mechanically stacked heterostructure between Bi2Te2Se (a TI) and chemical vapor deposition (CVD)-grown graphene, using the spin potentiometric measurement. When a dc current is flowing from the TI to graphene, we detect a striking step-like voltage change (spin signal) in both the TI and graphene using ferromagnetic (FM) probes. The sign of the spin signal can be reversed by reversing the direction of the dc bias current, and the corresponding amplitude of the spin signal increases linearly with the bias current, indicative of a current-induced helical spin polarization in both TI and graphene. In contrast, the graphene itself exhibits usual nonlocal spin valve signal when the spins are injected using an FM electrode. We discuss possible origins of the helical spin polarization injected into the graphene in our TI/graphene heterostructure that may include TSS as well as the spin-orbit coupled Rashba states. Our findings show electrical injection of a spin helical current into graphene through a TI and demonstrate TIs as potential spin sources for future spintronic devices wherein spin manipulation is achieved electrically.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Gate-Tunable and Thickness-dependent Electronic and Thermoelectric Transport in few-layer MoS2

Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of single-layer MoS2, whose band structure features a direct bandgap, in sharp contrast to the indirect bandgap of thicker MoS2. In this paper, we present a systematic study of the thickness-dependent electrical and thermoelectric properties of few-layer MoS2. We observe that the electrical conductivity () increases as we reduce the thickness of MoS2 and peaks at about two layers, with six-time larger conductivity than our thickest sample (23-layer MoS2). Using a back-gate voltage, we modulate the Fermi energy () of the sample where an increase in the Seebeck coefficient () is observed with decreasing gate voltage () towards the subthreshold (OFF state) of the device, reaching as large as in a four-layer MoS2. While previous reports have focused on a single-layer MoS2 and measured Seebeck coefficient in the OFF state, which has vanishing electrical conductivity and thermoelectric power factor (), we show that MoS2-based devices in their ON state can have as large as in the two-layer sample. The increases with decreasing thickness then drops abruptly from double-layer to single-layer MoS2, a feature we suggest as due to a change in the energy dependence of the electron mean-free-path according to our theoretical calculation. Moreover, we show that care must be taken in thermoelectric measurements in the OFF state to avoid obtaining erroneously large Seebeck coefficients when the channel resistance is very high. Our study paves the way towards a more comprehensive examination of the thermoelectric performance of two-dimensional (2D) semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

In-surface confinement of topological insulator nanowire surface states

The bandstructures of [110] and [001] Bi2Te3 nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assumption that all topological insulator wire surfaces are equivalent is inappropriate. The Fermi velocity of chemically distinct wire surfaces differs significantly which creates an effective in-surface confinement potential. As a result, topological insulator surface states prefer specific surfaces. Therefore, experiments have to be designed carefully not to probe surfaces unfavorable to the surface states (low density of states) and thereby be insensitive to the TI-effects.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

Topological insulators are a novel class of quantum matter with a gapped insulating bulk yet gapless spin helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully-tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conducatance quantum at the double Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction respectively. Such a system paves the way to explore rich physics ranging from topological magnetoelectric effects to exciton condensation.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Short-range Photoassociation of LiRb

We have observed short-range photoassociation of LiRb to the two lowest vibrational states of the $d\,^3Π$ potential. These $d\,^3Π$ molecules then spontaneously decay to vibrational levels of the $a^3\,Σ^+$ state with generation rates of $\sim10^3$ molecules per second. This is the first observation of many of these $a\,^3Σ^+$ levels. We observe an alternation of the peak heights in the rotational photoassociation spectrum that suggests a $p$-wave shape resonance in the scattering state. Franck-Condon overlap calculations predict that photoassociation to higher vibrational levels of the $d\,^3Π$, in particular the sixth vibrational level, should populate the lowest vibrational level of the $a\,^3Σ^+$ state with a rate as high as $10^4$ molecules per second. These results encourage further work to explain our observed LiRb collisional physics using PECs. This work also motivates an experimental search for short-range photoassociation to other bound molecules, such as the $c\,^3Σ^+$ or $b\,^3Π$, as prospects for preparing ground-state molecules.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electrical injection and detection of spin-polarized currents in topological insulator Bi2Te2Se

Topological insulators (TIs) are an unusual phase of quantum matter with nontrivial spin-momentum locked topological surface states (TSS). The electrical detection of spin-momentum locking of the TSS in 3D TIs has been lacking till very recently. Many of the results are measured on samples with significant bulk conduction, such as metallic Bi2Se3, where it can be challenging to separate the surface and bulk contribution to the measured spin signal. Here, we report spin potentiometric measurements in thin flakes exfoliated from bulk insulating 3D TI Bi2Te2Se (BTS221) crystals, using two outside nonmagnetic (Au) contacts for driving a DC spin helical current and a middle ferromagnetic (FM)-Al2O3 tunneling contact for detecting spin polarization. The voltage measured by the FM electrode exhibits a hysteretic step-like change when sweeping an in-plane magnetic field between opposite directions along the easy axis of the FM contact to switch its magnetization. Importantly, the direction of this step-like voltage change can be reversed by reversing the direction of the DC current, and the amplitude of the change as measured by the difference in the detector voltage between opposite FM magnetization increases linearly with increasing bias current, consistent with the current-induced spin polarization of spin-momentum-locked TSS. Our work directly demonstrates the electrical injection and detection of spin polarization in TI and may enable utilization of spin-helical TSS for future applications in nanoelectronics and spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Formation of ultracold $^{7}$Li$^{85}$Rb molecules in the lowest triplet electronic state by photoassociation and their detection by ionization spectroscopy

We report the formation of ultracold $^{7}$Li$^{85}$Rb molecules in the $a^{3}Σ^{+}$ electronic state by photoassociation (PA) and their detection via resonantly enhanced multiphoton ionization (REMPI). With our dual-species Li and Rb magneto-optical trap (MOT) apparatus, we detect PA resonances with binding energies up to ~62 cm$^{-1}$ below the $^{7}$Li 2s $^{2}S_{1/2}$ $+$ $^{85}$Rb 5p $^{2}P_{1/2}$ asymptote. In addition, we use REMPI spectroscopy to probe the $a^{3}Σ^{+}$ state and excited electronic $3^{3} Π$ and $4^{3} Σ^{+}$ states, and identify $a^{3}Σ^{+} (v" = 7 - 13)$, $3^{3} Π(v'_Π = 0 - 10)$ and $4^{3} Σ^{+} (v'_Σ = 0 - 5)$ vibrational levels. Our line assignments agree well with ab initio calculations. These preliminary spectroscopic studies on previously unobserved electronic states are crucial to discovering transition pathways for transferring ultracold LiRb molecules created via PA to deeply bound rovibrational levels of the electronic ground state.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Gate-tunable and high responsivity graphene phototransistors on undoped semiconductor substrates

Due to its high charge carrier mobility, broadband light absorption, and ultrafast carrier dynamics, graphene is a promising material for the development of high-performance photodetectors. Graphene-based photodetectors have been demonstrated to date using monolayer graphene operating in conjunction with either metals or semiconductors. Most graphene devices are fabricated on doped Si substrates with SiO2 dielectric used for back gating. Here, we demonstrate photodetection in graphene field effect phototransistors fabricated on undoped semiconductor (SiC) substrates. The photodetection mechanism relies on the high sensitivity of the graphene conductivity to the local change of the electric field that can result from the photo-excited charge carriers produced in the back-gated semiconductor substrate. We also modeled the device and simulated its operation using the finite element method to validate the existence of the field induced photoresponse mechanism and study its properties. Our graphene phototransistor possesses a room-temperature photoresponsivity as high as ~ 7.4 A/W, higher than the required photoresponsivity (1 A/W) in most practical applications. The light power-dependent photocurrent and photoresponsivity can be tuned by the source-drain bias voltage and back-gate voltage. Graphene phototransistors based on this simple and generic architecture can be fabricated by depositing graphene on a variety of undoped substrates, and are attractive for many applications in which photodetection or radiation detection is sought.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observation of reduced 1/f noise in Graphene field effect transistors on Boron Nitride substrates

We have investigated the low frequency (f) flicker (also called 1/f) noise of single-layer graphene devices on h-BN (placed on SiO2/Si) along with those on SiO2/Si. We observe that the devices fabricated on h-BN have on average one order of magnitude lower noise amplitude compared with devices fabricated on SiO2/Si. We associate this noise reduction to the lower densities of impurities and trap sites in h-BN than in SiO2. Furthermore, the gate voltage dependent noise amplitude shows a broad maximum at Dirac point for devices on h-BN, in contrast to the M-shaped behavior showing a minimum at Dirac point for devices on SiO2, consistent with the reduced charge inhomogeneity (puddles) for graphene on h-BN. This study demonstrates that the use of h-BN as a substrate or dielectric can be a simple and efficient noise reduction technique valuable for electronic applications of graphene and other nanomaterials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Plasmon Resonance in Multilayer Graphene Nanoribbons

Plasmon resonance in nanopatterned single layer graphene nanoribbon (SL-GNR), double layer graphene nanoribbon (DL-GNR) and triple layer graphene nanoribbon (TL-GNR) structures is studied both experimentally and by numerical simulations. We use 'realistic' graphene samples in our experiments to identify the key bottle necks in both experiments and theoretical models. The existence of electrical tunable plasmons in such stacked multilayer GNRs was first experimentally verified by infrared microscopy. We find that the strength of the plasmonic resonance increases in DL-GNR when compared to SL-GNRs. However, we do not find a further such increase in TL-GNRs compared to DL-GNRs. We carried out systematic full wave simulations using finite element technique to validate and fit experimental results, and extract the carrier scattering rate as a fitting parameter. The numerical simulations show remarkable agreement with experiments for unpatterned SLG sheet, and a qualitative agreement for patterned graphene sheet. We believe that further improvements such as introducing a bandgap into the numerical model could lead to a better quantitative agreement of numerical simulations with experiments. We also note that such advanced modeling would first require better quality graphene samples and accurate measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator

Topological insulators (TI), with characteristic Dirac-fermion topological surface states (TSS), have emerged as a new class of electronic materials with rich potentials for both novel physics and device applications. However, a major challenge with realistic TI materials is to access, distinguish and manipulate the electronic transport of TSS often obscured by other possible parallel conduction channels that include the bulk as well as a two-dimensional electron gas (2DEG) formed near the surface due to bending of the bulk bands. Such a (Schrodinger-fermion) 2DEG represents topologically-trivial surface states, whose coexistence with the TSS has been revealed by angle resolved photoemission spectroscopy. Here we show that simple manipulations of surface conditions can be used to access and control both types of surface states and their coexistence in bulk-insulating Bi2Te2Se, whose surface conduction is prominently manifested in temperature dependent resistance and nonlocal transport. The trivial 2DEG and TSS can both exhibit clear Shubnikov-de Haas oscillations in magnetoresistance, with different Berry phases ~0 and ~pi that distinguish their different topological characters. We also report a deviation from the typical weak antilocalization behavior, possibly due to high mobility TSS. Our study enables distinguishing, controlling and harnessing electronic transport of TI surface carriers with different topological natures.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Formation of deeply bound ultracold LiRb molecules via photoassociation near the Li 2S$_{1/2}$ + Rb 5P$_{3/2}$ asymptote

We present spectra of ultracold $^7$Li$^{85}$Rb molecules in their electronic ground state formed by spontaneous decay of weakly bound photoassociated molecules. Beginning with atoms in a dual species magneto-optical trap (MOT), weakly bound molecules are formed in the 4(1) electronic state, which corresponds to the B$^1Π$ state at short range. These molecules spontaneously decay to the electronic ground state and we use resonantly enhanced multiphoton ionization (REMPI) to determine the vibrational population distribution in the electronic ground states after spontaneous emission. Many of the observed lines from the spectra are consistent with transitions from the X$^1Σ^+$ ground electronic state to either the B$^1Π$ or D$^1Π$ electronic states that have been previously observed, with levels possibly as low as X$^1Σ^+$ $(v'' = 2)$ being populated. We do not observe decay to weakly bound vibrational levels of the X$^1Σ^+$ or a$^3Σ^+$ electronic states in the spectra. We also deduce a lower bound of 3900 cm$^{-1}$ for the dissociation energy of the LiRb$^+$ molecular ion.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Formation of ultracold LiRb molecules by photoassociation near the Li (2s 2S1/2) + Rb (5p 2P1/2) asymptote

We report the production of ultracold 7Li85Rb molecules by photoassociation (PA) below the Li (2s 2S1/2) + Rb (5p 2P1/2) asymptote. We perform PA spectroscopy in a dual-species 7Li-85Rb magneto-optical trap (MOT) and detect the PA resonances using trap loss spectroscopy. We observe several strong PA resonances corresponding to the last few bound states, assign the lines and derive the long range C6 dispersion coefficients for the Li (2s 2S1/2) + Rb (5p 2P1/2) asymptote. We also report an excited-state molecule formation rate (P_LiRb) of ~10^7 s^-1 and a PA rate coefficient (K_PA) of ~4x10^-11 cm^3/s, which are both among the highest observed for heteronuclear bi-alkali molecules. These suggest that PA is a promising route for the creation of ultracold ground state LiRb molecules.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Gate Tunable Relativistic Mass and Berry$'$s phase in Topological Insulator Nanoribbon Field Effect Devices

Transport due to spin-helical massless Dirac fermion surface state is of paramount importance to realize various new physical phenomena in topological insulators, ranging from quantum anomalous Hall effect to Majorana fermions. However, one of the most important hallmarks of topological surface states, the Dirac linear band dispersion, has been difficult to reveal directly in transport measurements. Here we report experiments on Bi2Te3 nanoribbon ambipolar field effect devices on high-k SrTiO3 substrates, where we achieve a gate-tuned bulk metal-insulator transition and the topological transport regime with substantial surface state conduction. In this regime, we report two unambiguous transport evidences for gate-tunable Dirac fermions through π Berry$'$s phase in Shubnikov-de Haas oscillations and effective mass proportional to the Fermi momentum, indicating linear energy-momentum dispersion. We also measure a gate-tunable weak anti-localization (WAL) with 2 coherent conduction channels (indicating 2 decoupled surfaces) near the charge neutrality point, and a transition to weak localization (indicating a collapse of the Berry$'$s phase) when the Fermi energy approaches the bulk conduction band. The gate-tunable Dirac fermion topological surface states pave the way towards a variety of topological electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Interspecies collision-induced losses in a dual species 7Li-85Rb magneto-optical trap

In this article, we report the measurement of collision-induced loss rate coefficients β_{Li,Rb} and β_{Rb,Li}, and also discuss means to significantly suppress such collision induced losses. We first describe our dual-species magneto-optical trap (MOT) that allows us to simultaneously trap > 5x10^8 7Li atoms loaded from a Zeeman slower and > 2x10^8 85Rb atoms loaded from a dispenser. We observe strong interspecies collision-induced losses in the MOTs which dramatically reduce the maximum atom number achievable in the MOTs. We measure the trap loss rate coefficients β_{Li,Rb} and β_{Rb,Li}, and, from a study of their dependence on the MOT parameters, determine the cause for the losses observed. Our results provide valuable insights into ultracold collisions between 7Li and 85Rb, guide our efforts to suppress collision induced losses, and also pave the way for the production of ultracold 7Li85Rb molecules.

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preprint2014arXiv

Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator

A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with a gapped insulating bulk yet a conducting surface hosting topologically-protected gapless surface states. One of the most distinct electronic transport signatures predicted for such topological surface states (TSS) is a well-defined half-integer quantum Hall effect (QHE) in a magnetic field, where the surface Hall conductivities become quantized in units of (1/2)e2/h (e being the electron charge, h the Planck constant) concomitant with vanishing resistance. Here, we observe well-developed QHE arising from TSS in an intrinsic TI of BiSbTeSe2. Our samples exhibit surface dominated conduction even close to room temperature, while the bulk conduction is negligible. At low temperatures and high magnetic fields perpendicular to the top and bottom surfaces, we observe well-developed integer quantized Hall plateaus, where the two parallel surfaces each contributing a half integer e2/h quantized Hall (QH) conductance, accompanied by vanishing longitudinal resistance. When the bottom surface is gated to match the top surface in carrier density, only odd integer QH plateaus are observed, representing a half-integer QHE of two degenerate Dirac gases. This system provides an excellent platform to pursue a plethora of exotic physics and novel device applications predicted for TIs, ranging from magnetic monopoles and Majorana particles to dissipationless electronics and fault-tolerant quantum computers.

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preprint2014arXiv

Photoassociation of ultracold LiRb* molecules: observation of high efficiency and unitarity-limited rate saturation

We report the production of ultracold heteronuclear 7Li85Rb molecules in excited electronic states by photoassociation (PA) of ultracold 7Li and 85Rb atoms. PA is performed in a dual-species 7Li-85Rb magneto-optical trap (MOT) and the PA resonances are detected using trap loss spectroscopy. We identify several strong PA resonances below the Li (2s 2S1/2) + Rb (5p 2P3/2) asymptote and experimentally determine the long range C6 dispersion coefficients. We find a molecule formation rate (P_LiRb) of 3.5x10^7 s^-1 and a PA rate coefficient (K_PA) of 1.3x10^-10 cm^3/s, the highest among heteronuclear bi-alkali molecules. At large PA laser intensity, we observe the saturation of the PA rate coefficient (K_PA) close to the theoretical value at the unitarity limit.

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preprint2014arXiv

Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However, ambiguities exist because these phenomena could also come from bulk states (often carrying significant conduction in many TIs) and are observable even in non-TI materials. Here, we demonstrate back-gated ambipolar TI field-effect transistors in (Bi0.04Sb0.96)2Te3 thin films grown by molecular beam epitaxy on SrTiO3(111), exhibiting a large carrier density tunability (by nearly 2 orders of magnitude) and a metal-insulator transition in the bulk (allowing effectively switching off the bulk conduction). Tuning the Fermi level from bulk band to TSS strongly enhances both the WAL (increasing the number of quantum coherent channels from one to peak around two) and LMR (increasing its slope by up to 10 times). The SS-enhanced LMR is accompanied by a strongly nonlinear Hall effect, suggesting important roles of charge inhomogeneity (and a related classical LMR), although existing models of LMR cannot capture all aspects of our data. Our systematic gate and temperature dependent magnetotransport studies provide deeper insights into the nature of both MR phenomena and reveal differences between bulk and TSS transport in TI related materials.

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preprint2014arXiv

Quantum Defect Theory description of weakly bound levels and Feshbach resonances in LiRb

The multichannel quantum defect theory (MQDT) in combination with the frame transformation (FT) approach is applied to model the Fano-Feshbach resonances measured for $^{7}$Li$^{87}$Rb and $^{6}$Li$^{87}$Rb [Marzok {\it et al.} Phys. Rev. A {\bf 79} 012717 (2009)]. The MQDT results show a level of accuracy comparable to that of previous models based on direct, fully numerical solutions of the the coupled channel Schrödinger equations (CC). Here, energy levels deduced from 2-photon photoassociation spectra for $^{7}$Li$^{85}$Rb are assigned by applying the MQDT approach, obtaining the bound state energies for the coupled channel problem. Our results confirm that MQDT yields a compact description of photoassociation observables as well as the Fano-Feshbach resonance positions and widths.

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preprint2014arXiv

Raman spectra and electron-phonon coupling in disordered graphene with gate-tunable doping

We report a Raman spectroscopy study of graphene field-effect transistors (GFET) with a controlled amount of defects introduced in graphene by exposure to electron-beam irradiation. Raman spectra are taken at T = 8 K over a range of back gate voltages (Vg) for various irradiation dosages (Re). We study effects in the Raman spectra due to Vg-induced doping and artificially created disorder at various Re. With moderate disorder (irradiation), the Raman G peak with respect to the graphene carrier density (nFE) exhibits a minimum in peak frequency and a maximum in peak width near the charge- neutral point (CNP). These trends are similar to those seen in previous works on pristine graphene and have been attributed to a reduction of electron-phonon coupling strength (D) and removal of the Kohn anomaly as the Fermi level moves away from the CNP. We also observe a maximum in I2D/IG and weak maximum in ID/IG near the CNP. All the observed dependences of Raman parameters on nFE weaken at stronger disorder (higher Re), implying that disorder causes a reduction of D as well. Our findings are valuable for understanding Raman spectra and electron-phonon physics in doped and disordered graphene.

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preprint2014arXiv

Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states

Spin-momentum helical locking is one of the most important properties of the nontrivial topological surface states (TSS) in 3D topological insulators (TI). It underlies the iconic topological protection (suppressing elastic backscattering) of TSS and is foundational to many exotic physics (eg., majorana fermions) and device applications (eg., spintronics) predicted for TIs. Based on this spin-momentum locking, a current flowing on the surface of a TI would be spin-polarized in a characteristic in-plane direction perpendicular to the current, and the spin-polarization would reverse when the current direction reverses. Observing such a spin-helical current in transport measurements is a major goal in TI research and applications. We report spin-dependent transport measurements in spin valve devices fabricated from exfoliated thin flakes of Bi2Se3 (a prototype 3D TI) with ferromagnetic (FM) Ni contacts. Applying an in-plane magnetic (B) field to polarize the Ni contacts along their easy axis, we observe an asymmetry in the hysteretic magnetoresistance (MR) between opposite B field directions. The polarity of the asymmetry in MR can be reversed by reversing the direction of the DC current. The observed asymmetric MR can be understood as a spin-valve effect between the current-induced spin polarization on the TI surface (due to spin-momentum-locking of TSS) and the spin-polarized ferromagnetic contacts. Our results provide a direct transport evidence for the spin helical current in TSS.

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preprint2014arXiv

Tunable Landau-Zener transitions in a spin-orbit coupled Bose-Einstein condensate

The Landau-Zener (LZ) transition is one of the most fundamental phenomena in quantum dynamics. It describes nonadiabatic transitions between quantum states near an avoided crossing that can occur in diverse physical systems. Here we report experimental measurements and tuning of LZ transitions between the dressed eigenlevels of a Bose-Einstein condensate (BEC) that is synthetically spin-orbit (SO) coupled. We measure the transition probability as the BEC is accelerated through the SO avoided crossing and study its dependence on the coupling between the diabatic (bare) states, eigenlevel slope, and eigenstate velocity--the three parameters of the LZ model that are independently controlled in our experiments. Furthermore, we performed time-resolved measurements to demonstrate the breaking down of the spin-momentum locking of the spin-orbit-coupled BEC in the nonadiabatic regime, and we determined the diabatic switching time of the LZ transitions. Our observations show quantitative agreement with the LZ model and numerical simulations of the quantum dynamics in the quasimomentum space. The tunable LZ transition may be exploited to enable a spin-dependent atomtronic transistor.

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preprint2013arXiv

Effects of magnetic dipole-dipole interactions in atomic Bose-Einstein condensates with tunable s-wave interactions

The s-wave interaction is usually the dominant form of interactions in atomic Bose-Einstein condensates (BECs). Recently, Feshbach resonances have been employed to reduce the strength of the s-wave interaction in many atomic speicies. This opens the possibilities to study magnetic dipole-dipole interactions (MDDI) in BECs, where the novel physics resulting from long-range and anisotropic dipolar interactions can be explored. Using a variational method, we study the effect of MDDI on the statics and dynamics of atomic BECs with tunable s-wave interactions. We benchmark our calculation against previously observed MDDI effects in $^{52}$Cr with excellent agreement, and predict new effects that should be promising to observe experimentally. A parameter of magnetic Feshbach resonances, $ε_{dd,\text{max}}$, is used to quantitatively indicate the feasibility of experimentally observing MDDI effects in different atomic species. We find that strong MDDI effects should be observable in both in-trap and time-of-flight behaviors for the alkali BECs of $^{7}$Li, $^{39}$K, and $^{133}$Cs. Our results provide a helpful guide for experimentalists to realize and study atomic dipolar quantum gases.

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preprint2013arXiv

Observation of Low Energy Raman Modes in Twisted Bilayer Graphene

Two new Raman modes below 100 cm^-1 are observed in twisted bilayer graphene grown by chemical vapor deposition. The two modes are observed in a small range of twisting angle at which the intensity of the G Raman peak is strongly enhanced, indicating that these low energy modes and the G Raman mode share the same resonance enhancement mechanism, as a function of twisting angle. The 94 cm^-1 mode (measured with a 532 nm laser excitation) is assigned to the fundamental layer breathing vibration (ZO (prime) mode) mediated by the twisted bilayer graphene lattice, which lacks long-range translational symmetry. The dependence of this modes frequency and linewidth on the rotational angle can be explained by the double resonance Raman process which is different from the previously-identified Raman processes activated by twisted bilayer graphene superlattice. The dependence also reveals the strong impact of electronic-band overlaps of the two graphene layers. Another new mode at 52 cm^-1, not observed previously in the bilayer graphene system, is tentatively attributed to a torsion mode in which the bottom and top graphene layers rotate out-of-phase in the plane.

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preprint2013arXiv

Optimizing the efficiency of evaporative cooling in optical dipole traps

We present a combined computational and experimental study to optimize the efficiency of evaporative cooling for atoms in optical dipole traps. By employing a kinetic model of evaporation, we provide a strategy for determining the optimal relation between atom temperature, trap depth, and average trap frequency during evaporation given experimental initial conditions. We then experimentally implement a highly efficient evaporation process in an optical dipole trap, showing excellent agreement between the theory and experiment. This method has allowed the creation of pure Bose-Einstein condensates of $^{87}$Rb with 2$\times 10^4$ atoms starting from only $5\times 10^5$ atoms initially loaded in the optical dipole trap, achieving an evaporation efficiency, $γ_{eff}$, of 4.0 during evaporation.

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preprint2013arXiv

Quantum Hall Effects in Monolayer-Bilayer Graphene Planar Junctions

The Hall resistance of a homogeneous electron system is well known to be anti-symmetric with respect to the magnetic field and the sign of charge carriers. We have observed that such symmetries no longer hold in planar hybrid structures consisting of partly single layer graphene (SLG) and partly bilayer graphene (BLG) in the quantum Hall (QH) regime. In particular, the Hall resistance (R12xy) across the SLG and BLG interface is observed to exhibit quantized plateaus that switch between those characteristic of SLG QH states and BLG QH states when either the sign of the charge carriers (controlled by a back gate) or the direction of the magnetic field is reversed. Simultaneously reversing both the carrier type and the magnetic field gives rise to the same quantized Hall resistances. The observed SLG-BLG interface QH states, with characteristic asymmetries with respect to the signs of carriers and magnetic field, are determined only by the chirality of the QH edge states and can be explained by a Landauer-Büttiker analysis applied to such graphene hybrid structures involving two regions of different Landau level (LL) structures.

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preprint2013arXiv

Strain-induced topological insulator phase transition in HgSe

Using ab initio electronic structure calculations we investigate the change of the band structure and the nu_0 topological invariant in HgSe (non-centrosymmetric system) under two different type of uniaxial strain along the [001] and [110] directions, respectively. Both compressive [001] and [110] strain leads to the opening of a (crystal field) band gap (with a maximum value of about 37 meV) in the vicinity of Gamma, and the concomitant formation of a camel-back- (inverse camel-back-) shape valence (conduction) band along the direction perpendicular to the strain with a minimum (maximum) at Gamma. We find that the Z_2 invariant nu_0=1, which demonstrates conclusively that HgSe is a strong topological insulator (TI). With further increase of the strain the band gap decreases vanishing at a critical strain value (which depends on the strain type) where HgSe undergoes a transition from a strong TI to a trivial (normal) insulator. HgSe exhibits a similar behavior under a tensile [110] uniaxial strain. On the other hand, HgSe remains a normal insulator by applying a [001] tensile uniaxial strain. Complementary electronic structure calculations of the non-polar (110) surface under compressive [110] tensile strain show two Dirac cones at the Gamma point whose spin chiral states are associated with the top and bottom slab surfaces.

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preprint2013arXiv

Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interests. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapour deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality comparable to exfoliated graphene. In this chapter, we review the synthesis and characterizations of graphene grown on copper foil substrates by atmospheric pressure chemical vapour deposition. We also discuss potential applications of such large scale synthetic graphene.

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preprint2012arXiv

Existence of negative differential thermal conductance in one-dimensional diffusive thermal transport

We show that in a finite one-dimensional (1D) system with diffusive thermal transport described by the Fourier's law, negative differential thermal conductance (NDTC) cannot occur when the temperature at one end is fixed. We demonstrate that NDTC in this case requires the presence of junction(s) with temperature dependent thermal contact resistance (TCR). We derive a necessary and sufficient condition for the existence of NDTC in terms of the properties of the TCR for systems with a single junction. We show that under certain circumstances we even could have infinite (negative or positive) differential thermal conductance in the presence of the TCR. Our predictions provide theoretical basis for constructing NDTC-based devices, such as thermal amplifiers, oscillators and logic devices.

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preprint2012arXiv

Graphene Induced Surface Reconstruction of Cu

An atomic-scale study utilizing scanning tunneling microscopy (STM) in ultrahigh vacuum (UHV) is performed on large single crystalline graphene grains synthesized on Cu foil by a chemical vapor deposition (CVD) method. After thermal annealing, we observe the presence of periodic surface depressions (stripe patterns) that exhibit long-range order formed in the area of Cu covered by graphene. We suggest that the observed stripe pattern is a Cu surface reconstruction formed by partial dislocations (which appeared to be stair-rod-like) resulting from the strain induced by the graphene overlayer. In addition, these graphene grains are shown to be more decoupled from the Cu substrate compared to previously studied grains that exhibited Moiré patterns.

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preprint2012arXiv

Observation of Quantized Hall Effect and Shubnikov-de Hass Oscillations in Highly Doped Bi2Se3: Evidence for Layered Transport of Bulk Carriers

Bi2Se3 is an important semiconductor thermoelectric material and a prototype topological insulator. Here we report observation of Shubnikov-de Hass (SdH) oscillations accompanied by quantized Hall resistances (Rxy) in highly-doped n-type Bi2Se3 with bulk carrier concentrations of few 10^19 cm^-3. Measurements under tilted magnetic fields show that the magnetotransport is 2D-like, where only the c-axis component of the magnetic field controls the Landau level formation. The quantized step size in 1/Rxy is found to scale with the sample thickness, and average ~e2/h per quintuple layer (QL). We show that the observed magnetotransport features do not come from the sample surface, but arise from the bulk of the sample acting as many parallel 2D electron systems to give a multilayered quantum Hall effect. Besides revealing a new electronic property of Bi2Se3, our finding also has important implications for electronic transport studies of topological insulator materials.

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preprint2012arXiv

Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals

We present a study of the structural and electronic properties of highly doped topological insulator Bi2Se3 single crystals synthesized by the Bridgman method. Lattice structural characterizations by X-ray diffraction, scanning tunneling microscopy, and Raman spectroscopy confirmed the high quality of the as-grown single crystals. The topological surface states in the electronic band structure were directly re- vealed by angle-resolved photoemission spectroscopy. Transport measurements showed that the conduction was dominated by the bulk carriers and confirmed a previously observed bulk quantum Hall effect in such highly doped Bi2Se3 samples. We briefly discuss several possible strategies of reducing bulk conductance.

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preprint2012arXiv

Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition

Topological insulator (TI) materials such as Bi2Te3 and Bi2Se3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based device applications. In this work, structural and electronic properties of Bi2Te3 thin films deposited by metal organic chemical vapor deposition (MOCVD) on GaAs (001) substrates were characterized via X-ray diffraction (XRD), Raman spectroscopy, angle-resolved photoemission spectroscopy (ARPES), and electronic transport measurements. The characteristic topological surface states (SS) with a single Dirac cone have been clearly revealed in the electronic band structure measured by ARPES, confirming the TI nature of the MOCVD Bi2Te3 films. Resistivity and Hall effect measurements have demonstrated relatively high bulk carrier mobility of ~350 cm^2/Vs at 300K and ~7,400 cm^2/Vs at 15 K. We have also measured the Seebeck coefficient of the films. Our demonstration of high quality topological insulator films grown by a simple and scalable method is of interests for both fundamental research and practical applications of thermoelectric and TI materials.

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preprint2012arXiv

Tunable Thermal Transport and Thermal Rectification in Strained Graphene Nanoribbons

Using molecular dynamics(MD) simulations, we study thermal transport in graphene nanoribbons (GNR) subjected to uniform uniaxial and nonuniform strain fields. We predict significant thermal rectification (over 70%) in a rectangular armchair GNR by applying a transverse force asymmetrically. The heat flux is larger from the less stressed region to the more stressed region. Furthermore, we develop a theoretical framework based on the non-equilibrium thermodynamics to discuss when thermal rectification under a stress gradient can occur. We conclude with a discussion of details relevant to experiment.

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preprint2011arXiv

Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition

The strong interest in graphene has motivated the scalable production of high quality graphene and graphene devices. Since large-scale graphene films synthesized to date are typically polycrystalline, it is important to characterize and control grain boundaries, generally believed to degrade graphene quality. Here we study single-crystal graphene grains synthesized by ambient CVD on polycrystalline Cu, and show how individual boundaries between coalescing grains affect graphene's electronic properties. The graphene grains show no definite epitaxial relationship with the Cu substrate, and can cross Cu grain boundaries. The edges of these grains are found to be predominantly parallel to zigzag directions. We show that grain boundaries give a significant Raman "D" peak, impede electrical transport, and induce prominent weak localization indicative of intervalley scattering in graphene. Finally, we demonstrate an approach using pre-patterned growth seeds to control graphene nucleation, opening a route towards scalable fabrication of single-crystal graphene devices without grain boundaries.

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preprint2011arXiv

Direct Imaging of Graphene Edges: Atomic Structure and Electronic Scattering

We report an atomically-resolved scanning tunneling microscopy (STM) investigation of the edges of graphene grains synthesized on Cu foils by chemical vapor deposition (CVD). Most of the edges are macroscopically parallel to the zigzag directions of graphene lattice. These edges have microscopic roughness that is found to also follow zigzag directions at atomic scale, displaying many ~120 degree turns. A prominent standing wave pattern with periodicity ~3a/4 (a being the graphene lattice constant) is observed near a rare-occurring armchair-oriented edge. Observed features of this wave pattern are consistent with the electronic intervalley backscattering predicted to occur at armchair edges but not at zigzag edges.

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preprint2011arXiv

Laser spectroscopy of the X 1Σ+ and B 1Π states of the LiRb molecule

We have studied the X 1Σ+ and B 1Π states of 7Li85Rb using Laser Induced Fluorescence (LIF) spectroscopy and Fluorescence Excitation Spectroscopy (FES). We extract molecular constants for levels v" = 0-2 of the X 1Σ+ state and levels v' = 0-20 of the B 1Π state. For the B 1Π state, we have observed rotational perturbations in the e-parity component of the v' = 2 level, and determined the dissociation energy. We discuss implications of our measurements in finding efficient photoassociation pathways for production of ultra-cold ground state LiRb molecules, and their detection via state selective ionization.

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preprint2011arXiv

Mode-hop-free tuning over 135 GHz of external cavity diode lasers without anti-reflection coating

We report an external cavity diode laser (ECDL), using a diode whose front facet is not antireflection (AR) coated, that has a mode-hop-free (MHF) tuning range greater than 135 GHz. We achieved this using a short external cavity and by simultaneously tuning the internal and external modes of the laser. We find that the precise location of the pivot point of the grating in our laser is less critical than commonly believed. The general applicability of the method, combined with the compact portable mechanical and electronic design, makes it well suited for both research and industrial applications.

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preprint2011arXiv

Nonlinear thermal transport and negative differential thermal conductance in graphene nanoribbons

We employ classical molecular dynamics to study the nonlinear thermal transport in graphene nanoribbons (GNRs). For GNRs under large temperature biases beyond linear response regime, we have observed the onset of negative differential thermal conductance (NDTC). NDTC is tunable by varying the manner of applying the temperature biases. NDTC is reduced and eventually disappears when the length of the GNR increases. We have also observed NDTC in triangular GNRs, where NDTC exists only when the heat current is from the narrower to the wider end. These effects may be useful in nanoscale thermal managements and thermal signal processing utilizing GNRs.

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preprint2011arXiv

Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

We report observations of well developed half integer quantum Hall effect (QHE) on mono layer graphene films of 7 mm \times 7 mm in size. The graphene films are grown by chemical vapor deposition (CVD) on copper, then transferred to SiO_{2} /Si substrates, with typical carrier mobilities \approx 4000 cm^{2} /Vs. The large size graphene with excellent quality and electronic homogeneity demonstrated in this work is promising for graphene-based quantum Hall resistance standards, and can also facilitate a wide range of experiments on quantum Hall physics of graphene and practical applications exploiting the exceptional properties of graphene.

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preprint2011arXiv

Room Temperature Device Performance of Electrodeposited InSb Nanowire Field Effect Transistors

In this study, InSb nanowires have been formed by electrodeposition and integrated into NW-FETs. NWs were formed in porous anodic alumina (PAA) templates, with the PAA pore diameter of approximately 100 nm defining the NW diameter. Following annealing at 125C and 420C respectively, the nanowires exhibited the zinc blende crystalline structure of InSb, as confirmed from x-ray diffraction and high resolution transmission electron microscopy. The annealed nanowires were used to fabricate nanowire field effect transistors (NW-FET) each containing a single NW with 500 nm channel length and gating through a 20nm SiO2 layer on a doped Si wafer. Following annealing of the NW-FETs at 300C for 10 minutes in argon ambient, transistor characteristics were observed with an ION ~ 40 uA (at VDS = 1V in a back-gate configuration), ION/IOFF ~ 16 - 20 in the linear regime of transistor operation and gd ~ 71uS. The field effect electron mobility extracted from the transconductance was ~1200 cm2 V-1 s-1 at room temperature. We report high on-current per nanowire compared with other reported NW-FETs with back-gate geometry and current saturation at low source-drain voltages. The device characteristics are not well described by long-channel MOSFET models, but can qualitatively be understood in terms of velocity saturation effects accounting for enhanced scattering

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preprint2011arXiv

Unequal Layer Densities in Bilayer Wigner Crystal at High Magnetic Field

We report studies of pinning mode resonances of magnetic field induced bilayer Wigner crystals of bilayer hole samples with negligible interlayer tunneling and different interlayer separations d, in states with varying layer densities, including unequal layer densities. With unequal layer densities, samples with large d relative to the in-plane carrier-carrier spacing a, two pinning resonances are present, one for each layer. For small d/a samples, a single resonance is observed even with significant density imbalance. These samples, at balance, were shown to exhibit an enhanced pinning mode frequency [Zhihai Wang et al., Phys. Rev. Lett. 136804 (2007)], which was ascribed to a one-component, pseudospin ferromagnetic Wigner solid. The evolution of the resonance frequency and line width indicates the quantum interlayer coherence survives at moderate density imbalance, but disappears when imbalance is sufficiently large.

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preprint2010arXiv

Ambipolar Graphene Field Effect Transistors by Local Metal Side Gates

We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range by the back gate and/or a second side gate. We also find that the side gated field effect is significantly stronger by electrically floating the back gate compared to grounding the back gate, consistent with the finding from electrostatic simulation.

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preprint2010arXiv

Effect of electron-beam irradiation on graphene field effect devices

Electron beam exposure is a commonly used tool for fabricating and imaging graphene-based devices. Here we present a study of the effects of electron-beam irradiation on the electronic transport properties of graphene and the operation of graphene field-effect transistors (GFET). Exposure to a 30 keV electron-beam caused negative shifts in the charge-neutral point (CNP) of the GFET, interpreted as due to n-doping in the graphene from the interaction of the energetic electron beam with the substrate. The shift of the CNP is substantially reduced for suspended graphene devices. The electron beam is seen to also decrease the carrier mobilities and minimum conductivity, indicating defects created in the graphene. The findings are valuable for understanding the effects of radiation damage on graphene and for the development of radiation-hard graphene-based electronics.

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preprint2010arXiv

Electronic Transport in Chemical Vapor Deposited Graphene Synthesized on Cu: Quantum Hall Effect and Weak Localization

We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 inches) graphene films have been synthesized, consisting dominantly of monolayer graphene as indicated by spectroscopic Raman mapping. Low temperature transport measurements are performed on micro devices fabricated from such CVD graphene, displaying ambipolar field effect (with on/off ratio ~5 and carrier mobilities up to ~3000 cm^2/Vs) and "half-integer" quantum Hall effect, a hall-mark of intrinsic electronic properties of monolayer graphene. We also observe weak localization and extract information about phase coherence and scattering of carriers.

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preprint2010arXiv

Entanglement Switch for Dipole Arrays

We propose a new entanglement switch of qubits consisting of electric dipoles, oriented along or against an external electric field and coupled by the electric dipole-dipole interaction. The pairwise entanglement can be tuned and controlled by the ratio of the Rabi frequency and the dipole-dipole coupling strength. Tuning the entanglement can be achieved for one, two and three-dimensional arrangements of the qubits. The feasibility of building such an entanglement switch is also discussed.

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preprint2010arXiv

Large-scale Graphitic Thin Films Synthesized on Ni and Transferred to Insulators: Structural and Electronic Properties

We present a comprehensive study of the structural and electronic properties of ultrathin films containing graphene layers synthesized by chemical vapor deposition (CVD) based surface segregation on polycrystalline Ni foils then transferred onto insulating SiO2/Si substrates. Films of size up to several mm's have been synthesized. Structural characterizations by atomic force microscopy (AFM), scanning tunneling microscopy (STM), cross-sectional transmission electron microscopy (XTEM) and Raman spectroscopy confirm that such large scale graphitic thin films (GTF) contain both thick graphite regions and thin regions of few layer graphene. The films also contain many wrinkles, with sharply-bent tips and dislocations revealed by XTEM, yielding insights on the growth and buckling processes of the GTF. Measurements on mm-scale back-gated transistor devices fabricated from the transferred GTF show ambipolar field effect with resistance modulation ~50% and carrier mobilities reaching ~2000 cm^2/Vs. We also demonstrate quantum transport of carriers with phase coherence length over 0.2 $μ$m from the observation of 2D weak localization in low temperature magneto-transport measurements. Our results show that despite the non-uniformity and surface roughness, such large-scale, flexible thin films can have electronic properties promising for device applications.

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preprint2010arXiv

Observation of pinning mode in Wigner solid of 1/3 fractional quantum Hall excitations

We report the observation of a resonance in the microwave spectra of the real diagonal conductivities of a two-dimensional electron system within a range of ~ +- .0.015 $ from filling factor $ν=1/3$. The resonance is remarkably similar to resonances previously observed near integer $ν$, and is interpreted as the collective pinning mode of a disorder-pinned Wigner solid phase of $e/3$-charged carriers .

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preprint2010arXiv

Scanning Gate Microscopy on Graphene: Charge Inhomogeneity and Extrinsic Doping

We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at various back gate voltages is monitored as a function of tip voltage and tip position. Near the Dirac point, the dependence of graphene resistance on tip voltage shows a significant variation with tip position. SGM imaging reveals mesoscopic domains of electron-doped and hole-doped regions. Our measurements indicate a substantial spatial fluctuation (on the order of 10^12/cm^2) in the carrier density in graphene due to extrinsic local doping. Important sources for such doping found in our samples include metal contacts, edges of graphene, structural defects, and resist residues.

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preprint2010arXiv

Thermal Conductivity and Thermal Rectification in Graphene Nanoribbons: a Molecular Dynamics Study

We have used molecular dynamics to calculate the thermal conductivity of symmetric and asymmetric graphene nanoribbons (GNRs) of several nanometers in size (up to ~4 nm wide and ~10 nm long). For symmetric nanoribbons, the calculated thermal conductivity (e.g. ~2000 W/m-K @400K for a 1.5 nm {\times} 5.7 nm zigzag GNR) is on the similar order of magnitude of the experimentally measured value for graphene. We have investigated the effects of edge chirality and found that nanoribbons with zigzag edges have appreciably larger thermal conductivity than nanoribbons with armchair edges. For asymmetric nanoribbons, we have found significant thermal rectification. Among various triangularly-shaped GNRs we investigated, the GNR with armchair bottom edge and a vertex angle of 30° gives the maximal thermal rectification. We also studied the effect of defects and found that vacancies and edge roughness in the nanoribbons can significantly decrease the thermal conductivity. However, substantial thermal rectification is observed even in the presence of edge roughness.

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preprint2010arXiv

Tuning the thermal conductivity of graphene nanoribbons by edge passivation and isotope engineering: a molecular dynamics study

Using classical molecular dynamics simulation, we have studied the effect of edge-passivation by hydrogen (H-passivation) and isotope mixture (with random or supperlattice distributions) on the thermal conductivity of rectangular graphene nanoribbons (GNRs) (of several nanometers in size). We found that the thermal conductivity is considerably reduced by the edge H-passivation. We also find that the isotope mixing can reduce the thermal conductivities, with the supperlattice distribution giving rise to more reduction than the random distribution. These results can be useful in nanoscale engineering of thermal transport and heat management using GNRs.

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preprint2009arXiv

Pinning mode resonance of a Skyrme crystal near Landau level filling factor $ν$=1

Microwave pinning-mode resonances found around integer quantum Hall effects, are a signature of crystallized quasiparticles or holes. Application of in-plane magnetic field to these crystals, increasing the Zeeman energy, has negligible effect on the resonances just below Landau level filling $ν=2$, but increases the pinning frequencies near $ν=1$, particularly for smaller quasiparticle/hole densities. The charge dynamics near $ν=1$, characteristic of a crystal order, are affected by spin, in a manner consistent with a Skyrme crystal.

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