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Jinjian Zhou

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cond-mat.mtrl-sci cond-mat.str-el

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preprint2024arXiv

Hard X-ray Generation and Detection of Nanometer-Scale Localized Coherent Acoustic Wave Packets in SrTiO$_3$ and KTaO$_3$

We demonstrate that the absorption of femtosecond x-ray pulses can excite quasi-spherical high-wavevector coherent acoustic phonon wavepackets using an all x-ray pump and probe scattering experiment. The time- and momentum-resolved diffuse scattering signal is consistent with strain pulses induced by the rapid electron cascade dynamics following photoionization at uncorrelated excitation centers. We quantify key parameters of this process, including the localization size of the strain wavepacket and the energy absorption efficiency, which are determined by the photoelectron and Auger electron cascade dynamics, as well as the electron-phonon interaction. In particular, we obtain the localization size of the observed strain wave packet to be 1.5 and 2.5 nm for bulk SrTiO$_3$ and KTaO$_3$ single crystals, even though there are no nanoscale structures or light-intensity patterns that would ordinarily be required to generate acoustic waves of wavelengths much shorter than the penetration depth. Whereas in GaAs and GaP we do not observe a signal above background. The results provide crucial information on x-ray matter interactions, which sheds light on the mechanism of x-ray energy deposition, and the study of high wavevector acoustic phonons and thermal transport at the nanoscale.

preprint2020arXiv

Ultralong carrier lifetime of topological edge states in a-Bi4Br4

The rising of quantum spin Hall insulators (QSHI) in two-dimensional (2D) systems has been attracting significant interest in current research, for which the 1D helical edge states, a hallmark of QSHI, are widely expected to be a promising platform for next-generation optoelectronics. However, the dynamics of the 1D edge states has not yet been experimentally addressed. Here, we report the observation of optical response of the topological helical edge states in a-Bi4Br4, using the infrared-pump infrared-probe microscopic spectroscopy. Remarkably, we observe that the carrier lifetime of the helical edge states reaches nanosecond-scale at room temperature, which is about 2 - 3 orders longer than that of most 2D topological surface states and is even comparable with that of the well developed optoelectronics semiconductors used in modern industry. The ultralong carrier lifetime of the topological edge states may be attributed to their helical and 1D nature. Our findings not only provide an ideal material for further investigations of the carrier dynamics of 1D helical edge states but also pave the way for its application in optoelectronics.

preprint2012arXiv

Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study

Using first-principles calculations within density functional theory, we investigate the intrinsic spin Hall effect in monolayers of group-VI transition-metal dichalcogenides MX2 (M = Mo, W and X = S, Se). MX2 monolayers are direct band-gap semiconductors with two degenerate valleys located at the corners of the hexagonal Brillouin zone. Because of the inversion symmetry breaking and the strong spin-orbit coupling, charge carriers in opposite valleys carry opposite Berry curvature and spin moment, giving rise to both a valley- and a spin-Hall effect. The intrinsic spin Hall conductivity (ISHC) in p-doped samples is found to be much larger than the ISHC in n-doped samples due to the large spin-splitting at the valence band maximum. We also show that the ISHC in inversion-symmetric bulk dichalcogenides is an order of magnitude smaller compared to monolayers. Our result demonstrates monolayer dichalcogenides as an ideal platform for the integration of valleytronics and spintronics.

preprint2011arXiv

First-principles calculation of topological invariants Z2 within the FP-LAPW formalism

In this paper, we report the implementation of first-principles calculations of topological invariants Z2 within the full-potential linearized augmented plane-wave (FP-LAPW) formalism. In systems with both time-reversal and spatial inversion symmetry (centrosymmetric), one can use the parity analysis of Bloch functions at time-reversal invariant momenta to determine the Z2 invariants. In systems without spatial inversion symmetry (noncentrosymmetric), however, a more complex and systematic method in terms of the Berry gauge potential and the Berry curvature is required to identify the band topology. We show in detail how both methods are implemented in FP-LAPW formalism and applied to several classes of materials including centrosymmetric compounds Bi2Se3 and Sb2Se3 and noncentrosymmetric compounds LuPtBi, AuTlS2 and CdSnAs2. Our work provides an accurate and effective implementation of first-principles calculations to speed up the search of new topological insulators.