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Jing-Xin Zhu

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2021arXiv

A possible way to achieve anomalous valley Hall effect by piezoelectric effect in $\mathrm{GdCl_2}$ monolayer

Ferrovalley materials can achieve manipulation of the valley degree of freedom with intrinsic spontaneous valley polarization introduced by their intrinsic ferromagnetism. A good ferrovalley material should possess perpendicular magnetic anisotropy (PMA), valence band maximum (VBM)/conduction band minimum (CBM) at valley points, strong ferromagnetic (FM) coupling and proper valley splitting. In this work, the monolayer $\mathrm{GdCl_2}$ is proposed as a potential candidate material for valleytronic applications by the first-principles calculations. It is proved that monolayer $\mathrm{GdCl_2}$ is a FM semiconductor with the easy axis along out of plane direction and strong FM coupling. A spontaneous valley polarization with a valley splitting of 42.3 meV is produced due to its intrinsic ferromagnetism and spin orbital coupling (SOC). Although the VBM of unstrained monolayer $\mathrm{GdCl_2}$ is away from valley points, a very small compressive strain (about 1\%) can make VBM move to valley points. We propose a possible way to realize anomalous valley Hall effect in monolayer $\mathrm{GdCl_2}$ by piezoelectric effect, not an external electric field, namely piezoelectric anomalous valley Hall effect (PAVHE). This phenomenon could be classified as piezo-valleytronics, being similar to piezotronics and piezophototronics. The only independent piezoelectric strain coefficient $d_{11}$ is -2.708 pm/V, which is comparable to one of classical bulk piezoelectric material $α$ -quartz ( $d_{11}$ =2.3 pm/V). The biaxial in-plane strain and electronic correlation effects are considered to confirm the reliability of our results. Finally, the monolayer $\mathrm{GdF_2}$ is predicted to be a ferrovalley material with dynamic and mechanical stabilities, PMA, VBM at valley points, strong FM coupling, valley splitting of 47.6 meV, and $d_{11}$ of 0.584 pm/V.

preprint2021arXiv

Sensitive electronic correlation effects on electronic properties in ferrovalley material Janus FeClF monolayer

The electronic correlation may have essential influence on electronic structures in some materials with special structure and localized orbital distribution. In this work, taking Janus monolayer FeClF as a concrete example, the correlation effects on its electronic structures are investigated by using generalized gradient approximation plus $U$ (GGA+ $U$ ) approach. For perpendicular magnetic anisotropy (PMA), the increasing electron correlation effect can induce the ferrovalley (FV) to half-valley-metal (HVM) to quantum anomalous Hall (QAH) to HVM to FV transitions. For QAH state, there are a unit Chern number and a chiral edge state connecting the conduction and valence bands. The HVM state is at the boundary of the QAH phase, whose carriers are intrinsically 100\% valley polarized. With the in-plane magnetic anisotropy, no special QAH states and prominent valley polarization are observed. However, for both out-of-plane and in-plane magnetic anisotropy, sign-reversible Berry curvature can be observed with increasing $U$ . It is found that these phenomenons are related with the change of $d_{xy}$ / $d_{x^2-y^2}$ and $d_{z^2}$ orbital distributions and different magnetocrystalline directions. It is also found that the magnetic anisotropy energy (MAE) and Curie temperature strongly depend on the $U$ . With PMA, taking typical $U=$ 2.5 eV, the electron valley polarization can be observed with valley splitting of 109 meV, which can be switched by reversing the magnetization direction. The analysis and results can be readily extended to other nine members of monolayer FeXY (X/Y=F, Cl, Br and I) due to sharing the same Fe-dominated low-energy states and electronic correlations with FeClF monolayer.

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Jing-Xin Zhu

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2 publications

A possible way to achieve anomalous valley Hall effect by piezoelectric effect in $\mathrm{GdCl_2}$ monolayer

Sensitive electronic correlation effects on electronic properties in ferrovalley material Janus FeClF monolayer

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Jing-Xin Zhu

Research overview

Is this your work?

2 publications

A possible way to achieve anomalous valley Hall effect by piezoelectric effect in GdCl2\mathrm{GdCl_2}GdCl2​ monolayer

Sensitive electronic correlation effects on electronic properties in ferrovalley material Janus FeClF monolayer

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A possible way to achieve anomalous valley Hall effect by piezoelectric effect in $\mathrm{GdCl_2}$ monolayer