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Researcher profile

Jie You

Jie You contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallquant-phArtificial Intelligencecond-mat.supr-conData Structures and AlgorithmsNeurons and Cognition

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Published work

8 published item(s)

preprint2016arXiv

Concept based Attention

Attention endows animals an ability to concentrate on the most relevant information among a deluge of distractors at any given time, either through volitionally 'top-down' biasing, or driven by automatically 'bottom-up' saliency of stimuli, in favour of advantageous competition in neural modulations for information processing. Nevertheless, instead of being limited to perceive simple features, human and other advanced animals adaptively learn the world into categories and abstract concepts from experiences, imparting the world meanings. This thesis suggests that the high-level cognitive ability of human is more likely driven by attention basing on abstract perceptions, which is defined as concept based attention (CbA).

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2

Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined quantum dots (QDs) can be achieved on TMDCs. Here, standard semiconductor fabrication techniques are used to demonstrate quantum confined structures on WSe2 with tunnel barriers defined by electric fields, thereby eliminating the edge states induced by etching steps, which commonly appear in gapless graphene QDs. Over 40 consecutive Coulomb diamonds with a charging energy of approximately 2 meV were observed, showing the formation of a QD, which is consistent with the simulations. The size of the QD could be tuned over a factor of 2 by changing the voltages applied to the top gates. These results shed light on quantum nano-devices on TMDCs for further researches.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Approximate Association via Dissociation

A vertex set $X$ of a graph $G$ is an association set if each component of $G - X$ is a clique, or a dissociation set if each component of $G - X$ is a single vertex or a single edge. Interestingly, $G - X$ is then precisely a graph containing no induced $P_3$'s or containing no $P_3$'s, respectively. We observe some special structures and show that if none of them exists, then the minimum association set problem can be reduced to the minimum (weighted) dissociation set problem. This yields the first nontrivial approximation algorithm for association set, and its approximation ratio is 2.5, matching the best result of the closely related cluster editing problem. The reduction is based on a combinatorial study of modular decomposition of graphs free of these special structures. Further, a novel algorithmic use of modular decomposition enables us to implement this approach in $O(m n + n^2)$ time.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Coherence times of precisely depth controlled NV centers in diamond

We investigated the depth dependence of coherence times of nitrogen-vacancy (NV) centers through precisely depth controlling by a moderately oxidative at 580°C in air. By successive nanoscale etching, NV centers could be brought close to the diamond surface step by step, which enable us to trace the evolution of the number of NV centers remained in the chip and to study the depth dependence of coherence times of NV centers with the diamond etching. Our results showed that the coherence times of NV centers declined rapidly with the depth reduction in their last about 22 nm before they finally disappeared, revealing a critical depth for the influence of rapid fluctuating surface spin bath. By monitoring the coherence time variation with depth, we could make a shallow NV center with long coherence time for detecting external spins with high sensitivity.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Suspending Effect on Low-Frequency Charge Noise in Graphene Quantum Dot

Charge noise is critical in the performance of gate-controlled quantum dots (QDs). Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET), increasing linearly with temperature. To understand its origin, we suspended the graphene QD above the substrate. In contrast to large area graphene FETs, we find that a suspended graphene QD has an almost-identical noise level as an unsuspended one. Tracking noise levels around the Coulomb blockade peak as a function of gate voltage yields potential fluctuations of order 1 "μeV", almost one order larger than in GaAs/GaAlAs QDs. Edge states rather than substrate-induced disorders, appear to dominate the 1/f noise, thus affecting the coherency of graphene nano-devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot

Standard semiconductor fabrication techniques are used to fabricate a quantum dot (QD) made of WS2, where Coulomb oscillations were found. The full-width-at-half-maximum of the Coulomb peaks increases linearly with temperature while the height of the peaks remains almost independent of temperature, which is consistent with standard semiconductor QD theory. Unlike graphene etched QDs, where Coulomb peaks belonging to the same QD can have different temperature dependences, these results indicate the absence of the disordered confining potential. This difference in the potential-forming mechanism between graphene etched QDs and WS2 QDs may be the reason for the larger potential fluctuation found in graphene QDs.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device

We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double quantum dot can be tuned to a few-electron region. Additionally, the inter-dot coupling of the double quantum dot can be tuned to a large extent according to the voltage on the middle gate. The quantum dot is shown to be tunable from a single dot to a well-isolated double dot. To assess the stability of such design, the potential fluctuation induced by 1/f noise was measured. Based on the findings herein, the quantum dot design developed in the undoped GaAs/AlGaAs semiconductor shows potential for the future exploitation of nano-devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Two-dimensional superconductivity at (110) LaAlO3/SrTiO3 interfaces

Novel low dimensional quantum phenomena are expected at (110) LaAlO3/SrTiO3 (LAO/STO) interfaces after the quasi two dimensional electron gas similar to that of (001) LAO/STO interfaces was found [G. Herranz et al., Sci. Rep. 2, 758 (2012) and A. Annadi et al., Nat. Commun. 4, 1838 (2013)]. Here, two dimensional superconductivity of (110) LAO/STO samples with a superconducting transition temperature of 184 mK is demonstrated based on systematical transport measurements. The two dimensional characteristic of the superconductivity is confirmed by analyzing the Berezinskii-Kosterlitz-Thouless transition. The estimated superconductive thickness is about 18 nm. These features of superconductivity of (110) LAO/STO interfaces are comparable to those of (001) LAO/STO interfaces. This discovery may inspire a new round of upsurge on study of LAO/STO interfaces.

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