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Jianzhou Zhao

Jianzhou Zhao contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2026arXiv

High-Performance KV$_3$Sb$_5$/WSe$_2$ van der Waals Photodetectors

Kagome metals AV$_3$Sb$_5$ (A = K, Rb, Cs) have recently emerged as a promising platform for exploring correlated and topological quantum states, yet their potential for optoelectronic applications remains largely unexplored. Here, we report high-performance photodetectors based on van der Waals KV$_3$Sb$_5$/WSe$_2$ heterojunctions. A high-quality Schottky interface readily forms between KV$_3$Sb$_5$ and WSe$_2$, enabling efficient separation and transport of photoinduced carriers. Under 520 nm illumination, the device achieves an open-circuit voltage up to 0.6 V, a responsivity of 809 mA/W, and a fast response time of 18.3 us. This work demonstrates the promising optoelectronic applications of Kagome metals and highlights the potential of KV$_3$Sb$_5$-based van der Waals heterostructures for high-performance photodetection.

preprint2022arXiv

Berry connection polarizability tensor and third-order Hall effect

One big achievement in modern condensed matter physics is the recognition of the importance of various band geometric quantities in physical effects. As prominent examples, Berry curvature and the Berry curvature dipole are connected to the linear and the second-order Hall effects, respectively. Here, we show that the Berry connection polarizability (BCP) tensor, as another intrinsic band geometric quantity, plays a key role in the third-order Hall effect. Based on the extended semiclassical formalism, we develop a theory for the third-order charge transport and derive explicit formulas for the third-order conductivity. Our theory is applied to the two-dimensional (2D) Dirac model to investigate the essential features of the BCP and the third-order Hall response. We further demonstrate the combination of our theory with the first-principles calculations to study a concrete material system, the monolayer FeSe. Our work establishes a foundation for the study of third-order transport effects, and reveals the third-order Hall effect as a tool for characterizing a large class of materials and for probing the BCP in band structure.

preprint2021arXiv

Intrinsic Second-Order Anomalous Hall Effect and Its Application in Compensated Antiferromagnets

Response properties that are purely intrinsic to physical systems are of paramount importance in physics research, as they probe fundamental properties of band structures and allow quantitative calculation and comparison with experiment. For anomalous Hall transport in magnets, an intrinsic effect can appear at the second order to the applied electric field. We show that this intrinsic second-order anomalous Hall effect is associated with an intrinsic band geometric property -- the dipole moment of Berry-connection polarizability (BCP) in momentum space. The effect has scaling relation and symmetry constraints that are distinct from the previously studied extrinsic contributions. Particularly, in antiferromagnets with $\mathcal{PT}$ symmetry, the intrinsic effect dominates. Combined with first-principles calculations, we demonstrate the first quantitative evaluation of the effect in the antiferromagnet Mn$_{2}$Au. We show that the BCP dipole and the resulting intrinsic second-order conductivity are pronounced around band near degeneracies. Importantly, the intrinsic response exhibits sensitive dependence on the Néel vector orientation with a $2π$ periodicity, which offers a new route for electric detection of the magnetic order in $\mathcal{PT}$-invariant antiferromagnets.

preprint2021arXiv

Phononic real Chern insulator with protected corner modes in graphynes

Higher-order topological insulators have attracted great research interest recently. Different from conventional topological insulators, higher-order topological insulators do not necessarily require spin-orbit coupling, which makes it possible to realize them in spinless systems. Here, we study phonons in 2D graphyne family materials. By using first-principle calculations and topology/symmetry analysis, we find that phonons in both graphdiyne and $γ$-graphyne exhibit a second-order topology, which belongs to the specific case known as real Chern insulator. We identify the nontrivial phononic band gaps, which are characterized by nontrivial real Chern numbers enabled by the spacetime inversion symmetry. The protected phonon corner modes are verified by the calculation on a finite-size nanodisk. Our study extends the scope of higher-order topology to phonons in real materials. The spatially localized phonon modes could be useful for novel phononic applications.

preprint2021arXiv

Symmetry-Enforced Nodal Chain Phonons

Topological phonons in crystalline materials have been attracting great interest. However, most cases studied so far are direct generalizations of the topological states from electronic systems. Here, we reveal a novel class of topological phonons -- the symmetry-enforced nodal-chain phonons, which manifest features unique for phononic systems. We show that with $D_{2d}$ little co-group at a non-time-reversal-invariant-momentum point, the phononic nodal chain is guaranteed to exist owing to the vector basis symmetry of phonons, which is a unique character distinct from electronic and other systems. Combined with the spinless character, this makes the proposed nodal-chain phonons enforced by symmorphic crystal symmetries. We further screen all 230 space groups, and find five candidate groups. Interestingly, the nodal chains in these five groups exhibit two different patterns: for tetragonal systems, they are one-dimensional along the fourfold axis; for cubic systems, they form a three-dimensional network structure. Based on first-principles calculations, we identify K$_{2}$O as a realistic material hosting almost ideal nodal-chain phonons. We show that the effect of LO-TO splitting, another unique feature for phonons, helps to expose the nodal-chain phonons in K$_{2}$O in a large energy window. In addition, all the five candidate groups have spacetime inversion symmetry, so the nodal chains also feature a quantized $π$ Berry phase. This leads to drumhead surface phonon modes that must exist on multiple surfaces of a sample.

preprint2020arXiv

Fermi liquid behavior and colossal magnetoresistance in layered MoOCl2

A characteristic of a Fermi liquid is the T^2 dependence of its resistivity, sometimes referred to as the Baber law. However, for most metals, this behavior is only restricted to very low temperatures, usually below 20 K. Here, we experimentally demonstrate that for the single-crystal van der Waals layered material MoOCl2, the Baber law holds in a wide temperature range up to ~120 K, indicating that the electron-electron scattering plays a dominant role in this material. Combining with the specific heat measurement, we find that the modified Kadowaki-Woods ratio of the material agrees well with many other strongly correlated metals. Furthermore, in the magneto-transport measurement, a colossal magneto-resistance is observed, which reaches ~350% at 9 T and displays no sign of saturation. With the help of first-principles calculations, we attribute this behavior to the presence of open orbits on the Fermi surface. We also suggest that the dominance of electron-electron scattering is related to an incipient charge density wave state of the material. Our results establish MoOCl2 as a strongly correlated metal and shed light on the underlying physical mechanism, which may open a new path for exploring the effects of electron-electron interaction in van der Waals layered structures.

preprint2020arXiv

Highly anisotropic two-dimensional metal in monolayer MoOCl$_2$

Anisotropy is a general feature in materials. Strong anisotropy could lead to interesting physical properties and useful applications. Here, based on first-principles calculations and theoretical analysis, we predict a stable two-dimensional (2D) material---the monolayer MoOCl$_2$, and show that it possesses intriguing properties related to its high anisotropy. Monolayer MoOCl$_2$ can be readily exfoliated from the van der Waals layered bulk, which has already been synthesized. We show that a high in-plane anisotropy manifests in the structural, phononic, mechanical, electronic, and optical properties of monolayer MoOCl$_2$. The material is a metal with highly anisotropic Fermi surfaces, giving rise to open orbits at the Fermi level, which can be probed in magneto-transport. Remarkably, the combination of high anisotropy and metallic character makes monolayer MoOCl$_2$ an almost ideal hyperbolic material. It has two very wide hyperbolic frequency windows from 0.41 eV (99 THz) to 2.90 eV (701 THz), and from 3.63 eV (878 THz) to 5.54 eV (1340 THz). The former window has a large overlap with the visible spectrum, and the dissipation for most part of this window is very small. The window can be further tuned by the applied strain, such that at a chosen frequency, a transition between elliptic and hyperbolic character can be induced by strain. Our work discovers a highly anisotropic 2D metal with extraordinary properties, which holds great potential for electronic and optical applications.

preprint2020arXiv

Nonsymmorphic nodal-line metals in the two-dimensional rare earth monochalcogenides MX (M = Sc, Y; X = S, Se, Te)

We predict a new family of two-dimensional (2D) rare earth monochalcogenide materials MX (M = Sc, Y; X = S, Se, Te). Based on first-principles calculations, we confirm their stability and systematically investigate their mechanical properties. We find that these materials are metallic and interestingly, they possess nodal lines in the low-energy band structure surrounding the whole Brillouin zone, protected by nonsymmorphic crystal symmetries in the absence of spin-orbit coupling (SOC). SOC opens small energy gaps at the nodal line, except for two high-symmetry points, at which fourfold degenerate 2D spin-orbit Dirac points are obtained. We show that these topological band features are robust under uniaxial and biaxial strains, but can be lifted by the shear strain. We also investigate the optical conductivities of these materials, and show that the transformation of the band structure under strain can be inferred from the optical absorption spectrum. Our work reveals a new family of 2D topological metal materials with interesting mechanical and electronic properties, which will facilitate the study of nonsymmorphic symmetry enabled nodal features in 2D.

preprint2020arXiv

Thermoelectric Generation of Orbital Magnetization in Metals

We propose an orbital magnetothermal effect wherein a temperature gradient generates an orbital magnetization (OM) for Bloch electrons, and we present a unified theory for electrically and thermally induced OM, valid for both metals and insulators. We reveal that there exists an intrinsic response of OM, for which the susceptibilities are completely determined by the band geometric quantities such as interband Berry connections, interband orbital moments, and the quantum metric. The theory can be readily combined with first-principles calculations to study real materials. As an example, we calculate the OM response in CrI$_{3}$ bilayers, where the intrinsic contribution dominates. The temperature scaling of intrinsic and extrinsic responses, the effect of phonon drag, and the phonon angular momentum contribution to OM are discussed.

preprint2019arXiv

Mott phase in a van der Waals transition-metal halide at single layer limit

Two-dimensional materials offer opportunities for unravelling unprecedented ordered states at single layer limit. Among such ordered states, Mott phase is rarely explored. Here, we report the Mott phase in van der Waals chromium (II) iodide (CrI2) films. High quality CrI2 films with atomically flat surface and macro size are grown on graphitized 6H-SiC(0001) substrate by molecular beam epitaxy. By in situ low temperature scanning tunneling microscopy and spectroscopy (STM/STS), we reveal that the film has a band gap as large as ~3.2 eV, which is nearly thickness independent. Density functional plus dynamic mean field theory calculations suggest that CrI2 films may be a strong Mott insulator with a ferromagnetically ordered ground state. The Mott phase is corroborated by the spectral band splitting, that is consistent with the extended Hubbard model, and gap reduction at charge dopants. Our study provides a platform for studying correlated electron states at single layer limit.

Jianzhou Zhao

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10 published item(s)

High-Performance KV$_3$Sb$_5$/WSe$_2$ van der Waals Photodetectors

Berry connection polarizability tensor and third-order Hall effect

Intrinsic Second-Order Anomalous Hall Effect and Its Application in Compensated Antiferromagnets

Phononic real Chern insulator with protected corner modes in graphynes

Symmetry-Enforced Nodal Chain Phonons

Fermi liquid behavior and colossal magnetoresistance in layered MoOCl2

Highly anisotropic two-dimensional metal in monolayer MoOCl$_2$

Nonsymmorphic nodal-line metals in the two-dimensional rare earth monochalcogenides MX (M = Sc, Y; X = S, Se, Te)

Thermoelectric Generation of Orbital Magnetization in Metals

Mott phase in a van der Waals transition-metal halide at single layer limit