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Researcher profile

Weikang Wu

Weikang Wu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-ph

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Published work

11 published item(s)

preprint2022arXiv

Berry connection polarizability tensor and third-order Hall effect

One big achievement in modern condensed matter physics is the recognition of the importance of various band geometric quantities in physical effects. As prominent examples, Berry curvature and the Berry curvature dipole are connected to the linear and the second-order Hall effects, respectively. Here, we show that the Berry connection polarizability (BCP) tensor, as another intrinsic band geometric quantity, plays a key role in the third-order Hall effect. Based on the extended semiclassical formalism, we develop a theory for the third-order charge transport and derive explicit formulas for the third-order conductivity. Our theory is applied to the two-dimensional (2D) Dirac model to investigate the essential features of the BCP and the third-order Hall response. We further demonstrate the combination of our theory with the first-principles calculations to study a concrete material system, the monolayer FeSe. Our work establishes a foundation for the study of third-order transport effects, and reveals the third-order Hall effect as a tool for characterizing a large class of materials and for probing the BCP in band structure.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Intrinsic Nonlinear Spin Magnetoelectricity in Centrosymmetric Magnets

We propose an intrinsic nonlinear spin magnetoelectric effect in magnetic materials, offering the potential of all-electric control of spin degree of freedom in centrosymmetric magnets, which reside outside of the current paradigm based on linear spin response. We reveal the band geometric origin of this effect in the momentum and magnetization space Berry connection polarizabilities, and clarify its symmetry characters. As an intrinsic effect, it is determined solely by the material's band structure and represents a material characteristic. Combining our theory with first-principles calculations, we predict sizable nonlinear spin magnetoelectricity in single-layer MnBi$_{2}$Te$_{4}$, which can be detected in experiment. Our theory paves the way for exploring rich nonlinear spintronic effects and novel device concepts based on them.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Intrinsic Second-Order Anomalous Hall Effect and Its Application in Compensated Antiferromagnets

Response properties that are purely intrinsic to physical systems are of paramount importance in physics research, as they probe fundamental properties of band structures and allow quantitative calculation and comparison with experiment. For anomalous Hall transport in magnets, an intrinsic effect can appear at the second order to the applied electric field. We show that this intrinsic second-order anomalous Hall effect is associated with an intrinsic band geometric property -- the dipole moment of Berry-connection polarizability (BCP) in momentum space. The effect has scaling relation and symmetry constraints that are distinct from the previously studied extrinsic contributions. Particularly, in antiferromagnets with $\mathcal{PT}$ symmetry, the intrinsic effect dominates. Combined with first-principles calculations, we demonstrate the first quantitative evaluation of the effect in the antiferromagnet Mn$_{2}$Au. We show that the BCP dipole and the resulting intrinsic second-order conductivity are pronounced around band near degeneracies. Importantly, the intrinsic response exhibits sensitive dependence on the Néel vector orientation with a $2π$ periodicity, which offers a new route for electric detection of the magnetic order in $\mathcal{PT}$-invariant antiferromagnets.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Monolayer RhB4: half-auxeticity and almost ideal spin-orbit Dirac point semimetal

Structural-property relationship, the connection between materials' structures and their properties, is central to the materials research. Especially at reduced dimensions, novel structural motifs often generate unique physical properties.Motivated by a recent work reporting a novel half auxetic effect in monolayer PdB4 with a hypercoordinated structure, here, we extensively explore similar 2D transition metal boride structures MB4 with M covering 3d and 4d elements.Our investigation screens out one stable candidate, the monolayer RhB4. We find that monolayer RhB4 also shows half auxeticity, i.e., the material always expands in a lateral in-plane direction in response to an applied strain in the other direction, regardless of whether the strain is positive or negative.We show that this special mechanical character is intimately tied to the hypercoordinated structure with the M\c{opyright}B8 structural motif. Furthermore, regarding electronic properties, monolayer RhB4 is found to be the first example of an almost ideal 2D spin-orbit Dirac point semimetal.The low-energy band structure is clean, with a pair of fourfold degenerate Dirac points robust under spin-orbit coupling located close to the Fermi level. These Dirac points are enforced by the nonsymmorphic space group symmetry which is also determined by the lattice structure. Our work deepens the fundamental understanding of structural-property relationship in reduced dimensions. The half auxeticity and the spin-orbit Dirac points will make monolayer RhB4 a promising platform for nanomechanics and nanoelectronics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Phononic real Chern insulator with protected corner modes in graphynes

Higher-order topological insulators have attracted great research interest recently. Different from conventional topological insulators, higher-order topological insulators do not necessarily require spin-orbit coupling, which makes it possible to realize them in spinless systems. Here, we study phonons in 2D graphyne family materials. By using first-principle calculations and topology/symmetry analysis, we find that phonons in both graphdiyne and $γ$-graphyne exhibit a second-order topology, which belongs to the specific case known as real Chern insulator. We identify the nontrivial phononic band gaps, which are characterized by nontrivial real Chern numbers enabled by the spacetime inversion symmetry. The protected phonon corner modes are verified by the calculation on a finite-size nanodisk. Our study extends the scope of higher-order topology to phonons in real materials. The spatially localized phonon modes could be useful for novel phononic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Symmetry-Enforced Nodal Chain Phonons

Topological phonons in crystalline materials have been attracting great interest. However, most cases studied so far are direct generalizations of the topological states from electronic systems. Here, we reveal a novel class of topological phonons -- the symmetry-enforced nodal-chain phonons, which manifest features unique for phononic systems. We show that with $D_{2d}$ little co-group at a non-time-reversal-invariant-momentum point, the phononic nodal chain is guaranteed to exist owing to the vector basis symmetry of phonons, which is a unique character distinct from electronic and other systems. Combined with the spinless character, this makes the proposed nodal-chain phonons enforced by symmorphic crystal symmetries. We further screen all 230 space groups, and find five candidate groups. Interestingly, the nodal chains in these five groups exhibit two different patterns: for tetragonal systems, they are one-dimensional along the fourfold axis; for cubic systems, they form a three-dimensional network structure. Based on first-principles calculations, we identify K$_{2}$O as a realistic material hosting almost ideal nodal-chain phonons. We show that the effect of LO-TO splitting, another unique feature for phonons, helps to expose the nodal-chain phonons in K$_{2}$O in a large energy window. In addition, all the five candidate groups have spacetime inversion symmetry, so the nodal chains also feature a quantized $π$ Berry phase. This leads to drumhead surface phonon modes that must exist on multiple surfaces of a sample.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Tunable anomalous Hall transport in bulk and two-dimensional 1$T$-CrTe$_{2}$: A first-principles study

Layered materials with robust magnetic ordering have been attracting significant research interest. In recent experiments, a new layered material 1$T$-CrTe$_{2}$ has been synthesized and exhibits ferromagnetism above the room temperature. Here, based on first-principles calculations, we investigate the electronic, magnetic, and transport properties of 1$T$-CrTe$_{2}$, both in the bulk and in the two-dimensional (2D) limit. We show that 1$T$-CrTe$_{2}$ can be stable in the monolayer form, and has a low exfoliation energy. The monolayer structure is an intrinsic ferromagnetic metal, which maintains a high Curie temperature above the room temperature. Particularly, we reveal interesting features in the anomalous Hall transport. We show that in the ground state, both bulk and monolayer 1$T$-CrTe$_{2}$ possess vanishing anomalous Hall effect, because the magnetization preserves one vertical mirror symmetry. The anomalous Hall conductivity can be made sizable by tuning the magnetization direction or by uniaxial strains that break the mirror symmetry. The room-temperature 2D ferromagnetism and the tunable anomalous Hall effect make the material a promising platform for nanoscale device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

First-principles study on the bulk and two-dimensional structures of AMnBi(A =K, Rb, Cs)-family materials

Magnetic materials with high mobilities are intriguing subject of research from both fundamental and application perspectives. Based on first-principle calculations, we investigate the physical properties of the already synthesized AMnBi(A =K, Rb, Cs)-family materials. We show that these materials are antiferromagnetic (AFM), with Neel temperatures above 300 K. They contain AFM ordered Mn layers, while the interlayer coupling changes from ferromagnetic (FM) for KMnBi to AFM for RbMnBi and CsMnBi. We find that these materials are narrow gap semiconductors. Owing to the small effective mass, the electron carrier mobility can be very high, reaching up to 100,000 cm2/(Vs) for KMnBi. In contrast, the hole mobility is much suppressed, typically lower by two orders of magnitude. We further study their two-dimensional (2D) single layer structures, which are found be AFM with fairly high mobility (1000 cm2/(Vs)). Their Neel temperatures can still reach room temperature. Interesting, we find that the magnetic phase transition is also accompanied by a metal-insulator phase transition, with the paramagnetic metal phase possessing a pair of nonsymmorphic-symmetry-protected 2D spin-orbit Dirac points. Furthermore, the magnetism can be effectively controlled by the applied strain. When the magnetic ordering is turned into FM, the system can become a quantum anomalous Hall insulator with gapless chiral edge states.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Higher-order Dirac fermions in three dimensions

Relativistic massless Weyl and Dirac fermions exhibit the isotropic and linear dispersion relations to preserve the Poincaré symmetry, the most fundamental symmetry in high energy physics. In solids, the counterparts of the Poincaré symmetry are crystallographic symmetries, and hence, it is natural to explore generalizations of Dirac and Weyl fermions compatible with their crystallographic symmetries and then the new physics coming along with them. Here, we study an important kind of generalization, namely massless Dirac fermions with higher-order dispersion relations protected by crystallographic symmetries in three-dimensional nonmagnetic systems. We perform a systematic search over all 230 space groups with time-reversal symmetry and spin-orbit coupling considered. We find that the order of dispersion cannot be higher than three, i.e., only the quadratic and cubic Dirac points (QDPs and CDPs) are possible. We discover previously unknown classes of higher-order Dirac points, including the chiral QDPs with Chern numbers of $\pm 4$ and the QDPs/CDPs without centrosymmetry. Especially the chiral QDPs feature four extensive surface Fermi arcs and four chiral Landau bands and hence leads to observable signatures in spectroscopic and transport experiments. We further show that these higher-order Dirac points represent parent phases for other exotic topological structures. Via controlled symmetry breaking, QDPs and CDPs can be transformed into double Weyl points, triple Weyl points, charge-2 Dirac points or Weyl loops. Using first-principles calculations, we also identify possible material candidates, including $α$-TeO$_2$ and YRu$_4$B$_4$, which realize the predicted nodal structures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Highly anisotropic two-dimensional metal in monolayer MoOCl$_2$

Anisotropy is a general feature in materials. Strong anisotropy could lead to interesting physical properties and useful applications. Here, based on first-principles calculations and theoretical analysis, we predict a stable two-dimensional (2D) material---the monolayer MoOCl$_2$, and show that it possesses intriguing properties related to its high anisotropy. Monolayer MoOCl$_2$ can be readily exfoliated from the van der Waals layered bulk, which has already been synthesized. We show that a high in-plane anisotropy manifests in the structural, phononic, mechanical, electronic, and optical properties of monolayer MoOCl$_2$. The material is a metal with highly anisotropic Fermi surfaces, giving rise to open orbits at the Fermi level, which can be probed in magneto-transport. Remarkably, the combination of high anisotropy and metallic character makes monolayer MoOCl$_2$ an almost ideal hyperbolic material. It has two very wide hyperbolic frequency windows from 0.41 eV (99 THz) to 2.90 eV (701 THz), and from 3.63 eV (878 THz) to 5.54 eV (1340 THz). The former window has a large overlap with the visible spectrum, and the dissipation for most part of this window is very small. The window can be further tuned by the applied strain, such that at a chosen frequency, a transition between elliptic and hyperbolic character can be induced by strain. Our work discovers a highly anisotropic 2D metal with extraordinary properties, which holds great potential for electronic and optical applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Valley-dependent properties of monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$

In a recent work, new two-dimensional materials, the monolayer MoSi$_{2}$N$_{4}$ and WSi$_{2}$N$_{4}$, have been successfully synthesized in experiment, and several other monolayer materials with the similar structure, such as MoSi$_{2}$As$_{4}$, have been predicted [{\color{blue}Science 369, 670-674 (2020)}]. Here, based on first-principles calculations and theoretical analysis, we investigate the electronic and optical properties of monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$. We show that these materials are semiconductors, with a pair of Dirac-type valleys located at the corners of the hexagonal Brillouin zone. Due to the broken inversion symmetry and the effect of spin-orbit coupling, the valley fermions manifest spin-valley coupling, valley-contrasting Berry curvature, and valley-selective optical circular dichroism. We also construct the low-energy effective model for the valleys, calculate the spin Hall conductivity and the permittivity, and investigate the strain effect on the band structure. Our result reveals interesting valley physics in monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$, suggesting their great potential for valleytronics and spintronics applications.

0 citations0 reviewsNo code linkedOpen access