Abstract

Kagome metals AV3_3Sb5_5 (A = K, Rb, Cs) have recently emerged as a promising platform for exploring correlated and topological quantum states, yet their potential for optoelectronic applications remains largely unexplored. Here, we report high-performance photodetectors based on van der Waals KV3_3Sb5_5/WSe2_2 heterojunctions. A high-quality Schottky interface readily forms between KV3_3Sb5_5 and WSe2_2, enabling efficient separation and transport of photoinduced carriers. Under 520 nm illumination, the device achieves an open-circuit voltage up to 0.6 V, a responsivity of 809 mA/W, and a fast response time of 18.3 us. This work demonstrates the promising optoelectronic applications of Kagome metals and highlights the potential of KV3_3Sb5_5-based van der Waals heterostructures for high-performance photodetection.

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